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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IPU60R2K0C6AKMA1 IPU60R2K0C6AKMA1 Rochester Electronics, LLC 0.0000
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0.00000000 download Tube CoolMOS™ Obsolete 1 (Unlimited) ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) PG-TO251-3 22.3W Tc N-Channel 2Ohm @ 760mA, 10V 3.5V @ 60μA 140pF @ 100V 6.7nC @ 10V 2.4A Tc 600V 10V ±20V
NVTFS4824NTAG NVTFS4824NTAG ON Semiconductor 0.0000
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0.00000000 download 23 Weeks ACTIVE, NOT REC (Last Updated: 4 days ago) Surface Mount Tape & Reel (TR) 2011 yes Active 1 (Unlimited) 5 EAR99 3.15mm ROHS3 Compliant Lead Free No 8 8-PowerWDFN 750μm 3.15mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT 8 R-PDSO-F5 FET General Purpose Power 1 DRAIN Halogen Free Single 3.2W 12 ns 3.2W Ta 21W Tc 46A 0.0075Ohm 30V 20 ns SILICON N-Channel 4.7m Ω @ 23A, 10V 2.5V @ 250μA 1740pF @ 12V 14nC @ 4.5V 27ns 6 ns 20V 18.2A Ta 30V 402A 72 mJ 4.5V 10V ±20V
2SK2967(F) 2SK2967(F) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download Through Hole Tube 2009 Obsolete 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) 1 150W 150W Tc 30A N-Channel 68m Ω @ 15A, 10V 3.5V @ 1mA 5400pF @ 10V 132nC @ 10V 30A Ta 250V 10V ±20V
2N7000-D74Z 2N7000-D74Z ON Semiconductor 0.0000
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0.00000000 download 11 Weeks Tape & Box (TB) 2011 yes Active 1 (Unlimited) 3 ROHS3 Compliant TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED 2N7000 NO O-PBCY-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 400mW Ta SWITCHING 5Ohm 60V SILICON N-Channel 5 Ω @ 500mA, 10V 3V @ 1mA 50pF @ 25V 0.2A 200mA Ta 60V 5 pF 4.5V 10V ±20V
FDMC3612 FDMC3612 ON Semiconductor 0.0000
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0.00000000 download 14 Weeks ACTIVE (Last Updated: 4 days ago) Surface Mount Tape & Reel (TR) 2006 PowerTrench® yes Active 1 (Unlimited) 5 EAR99 3.3mm ROHS3 Compliant Lead Free Gold No 8 8-PowerWDFN No SVHC 800μm 3.3mm Surface Mount 180mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e4 DUAL S-PDSO-N5 1 FET General Purpose Power 1 MO-240BA DRAIN Single 2.3W 7.4 ns 2.5V 2.3W Ta 35W Tc 3.3A 150°C SWITCHING 19 ns SILICON N-Channel 110m Ω @ 3.3A, 10V 4V @ 250μA 880pF @ 50V 21nC @ 10V 2.8ns 2 ns 20V 100V 2.5 V 3.3A Ta 16A Tc 32 mJ 6V 10V ±20V
NTMFS6H818NT1G NTMFS6H818NT1G ON Semiconductor 0.0000
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0.00000000 download 16 Weeks ACTIVE (Last Updated: 3 days ago) Tape & Reel (TR) 2015 yes Active 1 (Unlimited) RoHS Compliant 8-PowerTDFN, 5 Leads Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3.8W Ta 136W Tc N-Channel 3.7m Ω @ 20A, 10V 4V @ 190μA 3100pF @ 40V 46nC @ 10V 20A Ta 123A Tc 80V 6V 10V ±20V
AOD403_003 AOD403_003 Alpha & Omega Semiconductor Inc. 0.0000
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0.00000000 download Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 2.5W Ta 90W Tc P-Channel 6.2m Ω @ 20A, 20V 3.5V @ 250μA 3500pF @ 15V 61nC @ 10V 15A Ta 70A Tc 30V 10V 20V ±25V
2N7002BKM,315 2N7002BKM,315 Nexperia USA Inc. 0.0000
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0.00000000 download 20 Weeks Tape & Reel (TR) 2010 Automotive, AEC-Q101, TrenchMOS™ Last Time Buy 1 (Unlimited) 3 ROHS3 Compliant Lead Free Tin No 3 LOGIC LEVEL COMPATIBLE SC-101, SOT-883 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 BOTTOM 3 YES 1 DRAIN Single 715mW 5 ns 60V 360mW Ta 450mA SWITCHING 12 ns SILICON N-Channel 1.6 Ω @ 500mA, 10V 2.1V @ 250μA 50pF @ 10V 0.6nC @ 4.5V 6ns 7 ns 20V 60V 0.45A 450mA Ta 10V ±20V
SI4892DY-T1-GE3 SI4892DY-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2012 TrenchFET® yes Obsolete 1 (Unlimited) 8 EAR99 ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 40 8 FET General Purpose Power 1 Single 1.6W 10 ns 1.6W Ta 8.8A 0.012Ohm 24 ns SILICON N-Channel 12m Ω @ 12.4A, 10V 800mV @ 250μA (Min) 10.5nC @ 5V 11ns 10 ns 20V 30V 8.8A Ta 4.5V 10V ±20V
2N7002 2N7002 STMicroelectronics 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) STripFET™ yes Obsolete 1 (Unlimited) 3 EAR99 3.03mm ROHS3 Compliant Lead Free Tin 115mA No 3 LOW THRESHOLD TO-236-3, SC-59, SOT-23-3 No SVHC 1.2mm 3.05mm Surface Mount 4.535924g -55°C~150°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 30 2N70 3 FET General Purpose Power 1 Single 350mW 5 ns 2.1V 350mW Tc 200mA SWITCHING 7 ns SILICON N-Channel 5 Ω @ 500mA, 10V 3V @ 250μA 43pF @ 25V 2nC @ 5V 15ns 15 ns 18V 60V 60V 2.1 V 0.2A 200mA Tc 4.5V 10V ±18V
FCH47N60F FCH47N60F ON Semiconductor 0.0000
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0.00000000 download Tube 2004 SuperFET™ Obsolete 1 (Unlimited) TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) FCH47N60 417W Tc N-Channel 73m Ω @ 23.5A, 10V 5V @ 250μA 8000pF @ 25V 270nC @ 10V 47A Tc 600V 10V ±30V
NVTFS5C466NLTAG NVTFS5C466NLTAG ON Semiconductor 0.0000
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0.00000000 download 18 Weeks ACTIVE (Last Updated: 3 days ago) Tape & Reel (TR) Automotive, AEC-Q101 yes Active 1 (Unlimited) 5 ROHS3 Compliant 8-PowerWDFN not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES S-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN 38W Tc 0.012Ohm 40V SILICON N-Channel 7.3m Ω @ 10A, 10V 2.2V @ 250μA 880pF @ 25V 7nC @ 4.5V 14A 51A Tc 40V 214A 72 mJ 4.5V 10V ±20V
C2M1000170J C2M1000170J Cree/Wolfspeed 8.6747
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0.00000000 16 Weeks Bulk 2015 C2M™ Active 1 (Unlimited) 150°C RoHS Compliant 7 TO-263-7 (Straight Leads) No SVHC Surface Mount -55°C~150°C TJ SiCFET (Silicon Carbide) 2.6V 1Ohm D2PAK (7-Lead) 78W Tc 5.3A N-Channel 1.4Ohm @ 2A, 20V 3.1V @ 500μA (Typ) 200pF @ 1000V 13nC @ 20V 5.3A Tc 1700V 20V +25V, -10V
IXTA64N10L2 IXTA64N10L2 IXYS / Littelfuse 0.0000
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0.00000000 download 28 Weeks Tube 2013 Linear L2™ Active 1 (Unlimited) 10.41mm ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.83mm 9.65mm Surface Mount 1.946308g -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) 1 14 ns 357W Tc 64A 38 ns N-Channel 32m Ω @ 500mA, 10V 4.5V @ 250μA 3620pF @ 25V 100nC @ 10V 27ns 11 ns 20V 64A Tc 100V 10V ±30V
STW20NM65N STW20NM65N STMicroelectronics 0.0000
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0.00000000 download Through Hole Tube MDmesh™ II yes Obsolete 1 (Unlimited) 3 ROHS3 Compliant No AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3/e1 MATTE TIN/TIN SILVER COPPER STW20N 3 R-PSFM-T3 FET General Purpose Power 1 Single 160W 25 ns 160W Tc 19A SWITCHING 0.19Ohm 80 ns SILICON N-Channel 190m Ω @ 9.5A, 10V 4V @ 250μA 2500pF @ 50V 70nC @ 10V 10ns 20 ns 25V 650V 19A Tc 76A 500 mJ 10V ±25V
NTF3055L108T3LF NTF3055L108T3LF ON Semiconductor 0.0000
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0.00000000 download Surface Mount Tape & Reel (TR) 2005 Obsolete 1 (Unlimited) 4 EAR99 Non-RoHS Compliant Contains Lead 3A TO-261-4, TO-261AA not_compliant Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) DUAL GULL WING 240 30 4 R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.1W 1.3W Ta 3A SWITCHING 0.12Ohm 22 ns SILICON N-Channel 120m Ω @ 1.5A, 5V 2V @ 250μA 440pF @ 25V 15nC @ 5V 35ns 27 ns 15V 60V 3A 3A Ta 9A 74 mJ 5V ±15V
IPA50R950CEXKSA2 IPA50R950CEXKSA2 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 2008 CoolMOS™ CE yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 7 ns 500V 25.7W Tc 3.7A SWITCHING 0.95Ohm 25 ns SILICON N-Channel 950m Ω @ 1.2A, 13V 3.5V @ 100μA 231pF @ 100V 10.5nC @ 10V 4.9ns 19.5 ns 30V 3.7A Tc 12.8A 68 mJ 13V ±20V
BUK9508-55B,127 BUK9508-55B,127 Nexperia USA Inc. 0.0000
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0.00000000 download Tube 2010 TrenchMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Tin No 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 3 NO FET General Purpose Power 1 TO-220AB DRAIN Single 203W 29 ns 55V 203W Tc 110A SWITCHING 131 ns SILICON N-Channel 7m Ω @ 25A, 10V 2V @ 1mA 5280pF @ 25V 45nC @ 5V 123ns 86 ns 15V 55V 75A 75A Tc 4.5V 10V ±15V
PSMN7R0-40LS,115 PSMN7R0-40LS,115 NXP USA Inc. 0.0000
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0.00000000 Tape & Reel (TR) 2010 Obsolete 1 (Unlimited) ROHS3 Compliant 8-VDFN Exposed Pad Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8 YES FET General Purpose Power Single 65W Tc N-Channel 7m Ω @ 10A, 10V 4V @ 1mA 1286pF @ 12V 21.4nC @ 10V 40A 40A Tc 40V 10V ±20V
2SK4017(Q) 2SK4017(Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 52 Weeks Through Hole Bulk 2009 U-MOSIII Active 1 (Unlimited) 6.5mm RoHS Compliant Lead Free Silver, Tin No 3 TO-251-3 Stub Leads, IPak No SVHC 5.5mm 2.3mm Through Hole 150°C TJ MOSFET (Metal Oxide) 1 Single 20W 2.5V 20W Tc 5A N-Channel 100m Ω @ 2.5A, 10V 2.5V @ 1mA 730pF @ 10V 15nC @ 10V 10ns 4 ns 20V 2.5 V 5A Ta 60V 4V 10V ±20V
IXTT75N10L2 IXTT75N10L2 IXYS / Littelfuse 0.0000
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0.00000000 download 24 Weeks Surface Mount Tube 2009 Linear L2™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-268-3, D3Pak (2 Leads + Tab), TO-268AA unknown Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR DRAIN 400W Tc 75A AMPLIFIER 0.021Ohm 100V SILICON N-Channel 21m Ω @ 500mA, 10V 4.5V @ 250μA 8100pF @ 25V 215nC @ 10V 75A Tc 100V 225A 2500 mJ 10V ±20V
IRLU7821 IRLU7821 Infineon Technologies 0.0000
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0.00000000 download Tube 2006 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL SINGLE 260 30 NO R-PSIP-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 75W Tc SWITCHING 0.01Ohm 30V SILICON N-Channel 10m Ω @ 15A, 10V 1V @ 250μA 1030pF @ 15V 14nC @ 4.5V 30A 65A Tc 30V 260A 230 mJ 4.5V 10V ±20V
AUXHAF2805STRR AUXHAF2805STRR Infineon Technologies 0.0000
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0.00000000 Tape & Reel (TR) Obsolete 1 (Unlimited) ROHS3 Compliant
NTMFS4H01NT3G NTMFS4H01NT3G ON Semiconductor 0.0000
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0.00000000 download 4 Weeks ACTIVE (Last Updated: 1 week ago) Surface Mount Tape & Reel (TR) 2014 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 8 8-PowerTDFN not_compliant Surface Mount 150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Single 3.2W Ta 125W Tc 334A N-Channel 0.7m Ω @ 30A, 10V 2.1V @ 250μA 5693pF @ 12V 85nC @ 10V 54A Ta 334A Tc 25V 4.5V 10V ±20V
AON7414 AON7414 Alpha & Omega Semiconductor Inc. 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 Not For New Designs 1 (Unlimited) ROHS3 Compliant 8-PowerVDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power Single 4.1W Ta 15.5W Tc 20A N-Channel 15m Ω @ 8A, 10V 2.2V @ 250μA 595pF @ 15V 22nC @ 10V 12.5A Ta 20A Tc 30V 4.5V 10V ±20V
TK40S10K3Z(T6L1,NQ TK40S10K3Z(T6L1,NQ Toshiba Semiconductor and Storage 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 U-MOSIV Active 1 (Unlimited) 175°C -55°C RoHS Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 175°C TJ MOSFET (Metal Oxide) DPAK+ 93W Tc 40A N-Channel 18mOhm @ 20A, 10V 4V @ 1mA 3110pF @ 10V 61nC @ 10V 22ns 13 ns 20V 40A Ta 100V 3.11nF 10V ±20V 18 mΩ
IRFI9630GPBF IRFI9630GPBF Vishay Siliconix 0.3266
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0.00000000 download 8 Weeks Through Hole Tube 2016 Active 1 (Unlimited) 150°C -55°C 10.63mm ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack, Isolated Tab Unknown 9.8mm 4.83mm Through Hole 6.000006g -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Single 35W 12 ns -4V 800mOhm TO-220-3 35W Tc 300 ns 4.3A 2.5kV 28 ns P-Channel 800mOhm @ 2.6A, 10V 4V @ 250μA 700pF @ 25V 29nC @ 10V 27ns 24 ns 20V -200V 4.3A Tc 200V 700pF 10V ±20V 800 mΩ
NTD20N06L-001 NTD20N06L-001 Rochester Electronics, LLC 0.0000
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0.00000000 download Tube Obsolete 1 (Unlimited) Non-RoHS Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) I-PAK 1.36W Ta 60W Tj N-Channel 48mOhm @ 10A, 5V 2V @ 250μA 990pF @ 25V 32nC @ 5V 20A Ta 60V 5V ±15V
APT6029BLLG APT6029BLLG Microsemi Corporation 0.0000
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0.00000000 download 5 Weeks IN PRODUCTION (Last Updated: 4 weeks ago) Through Hole Tube 1997 POWER MOS 7® Active 1 (Unlimited) 150°C -55°C RoHS Compliant Lead Free 21A No TO-247-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) 1 300W 9 ns TO-247 [B] 300W Tc 21A 23 ns N-Channel 290mOhm @ 10.5A, 10V 5V @ 1mA 2615pF @ 25V 65nC @ 10V 5ns 4 ns 30V 21A Tc 600V 2.615nF 290 mΩ
ZXMN3A05N8TA ZXMN3A05N8TA Diodes Incorporated 0.0000
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0.00000000 Surface Mount Digi-Reel® Obsolete 1 (Unlimited) Non-RoHS Compliant Contains Lead 12A 8-SOIC (0.154, 3.90mm Width) Surface Mount 30V MOSFET (Metal Oxide) 2.5W 8-SO 100mA N-Channel 30V 75 Ω
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