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Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Lifecycle Status Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Source Url Status Check Date Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
SIA110DJ-T1-GE3 SIA110DJ-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Tape & Reel (TR) TrenchFET® Gen IV Active 1 (Unlimited) ROHS3 Compliant PowerPAK® SC-70-6 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PowerPAK® SC-70-6 Single 3.5W Ta 19W Tc N-Channel 55mOhm @ 4A, 10V 4V @ 250μA 550pF @ 50V 13nC @ 10V 5.4A Ta 12A Tc 100V 7.5V 10V ±20V
GP2M004A065HG GP2M004A065HG Global Power 0.0000
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0.00000000 download 12 Weeks 2014 Discontinued Non-RoHS Compliant
AOI1N60 AOI1N60 Alpha & Omega Semiconductor Inc. 0.0000
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0.00000000 16 Weeks Through Hole Tube 2011 Obsolete 1 (Unlimited) RoHS Compliant TO-251-3 Stub Leads, IPak Through Hole -50°C~150°C TJ MOSFET (Metal Oxide) 45W Tc 1.3A N-Channel 9 Ω @ 650mA, 10V 4.5V @ 250μA 160pF @ 25V 8nC @ 10V 1.3A Tc 600V 10V ±30V
IPAN50R500CEXKSA1 IPAN50R500CEXKSA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks Through Hole Tube 2013 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 28W Tc 11.1A SWITCHING 0.5Ohm 500V SILICON N-Channel 500m Ω @ 2.3A, 13V 3.5V @ 200μA 433pF @ 100V 18.7nC @ 10V 11.1A Tc 500V 24A 129 mJ 13V ±20V
EPC2053 EPC2053 EPC 0.0000
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0.00000000 download 10 Weeks Tape & Reel (TR) eGaN® Active 1 (Unlimited) ROHS3 Compliant Die Surface Mount -40°C~150°C TJ GaNFET (Gallium Nitride) Die N-Channel 3.8mOhm @ 25A, 5V 2.5V @ 9mA 1895pF @ 50V 14.8nC @ 5V 48A 100V 5V +6V, -4V
IRFH8337TR2PBF IRFH8337TR2PBF Infineon Technologies 0.0000
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0.00000000 download Surface Mount Cut Tape (CT) 2012 HEXFET® Obsolete 3 (168 Hours) 150°C -55°C 5.85mm RoHS Compliant Lead Free No 8 8-PowerTDFN No SVHC 1.17mm 5mm 12.8MOhm Surface Mount MOSFET (Metal Oxide) 3.2W 1 Single 3.2W 6.4 ns 1.8V 12.8mOhm PQFN (5x6) 18 ns 12A 5.7 ns N-Channel 12.8mOhm @ 16.2A, 10V 2.35V @ 25μA 790pF @ 10V 10nC @ 10V 12ns 4.1 ns 20V 30V 1.8 V 12A Ta 35A Tc 30V 790pF 12.8 mΩ
NTD6600N NTD6600N ON Semiconductor 0.0000
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0.00000000 download Surface Mount Tube 2007 Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 12A 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) GULL WING 235 30 3 R-PSSO-G2 Not Qualified 1 DRAIN Single 56.6W 1.28W Ta 56.6W Tc 12A SWITCHING 26 ns SILICON N-Channel 146m Ω @ 6A, 5V 2V @ 250μA 700pF @ 25V 20nC @ 5V 75ns 50 ns 20V 100V 12A Ta 44A 72 mJ 5V ±20V
IMZ120R060M1HXKSA1 IMZ120R060M1HXKSA1 Infineon Technologies 0.0000
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0.00000000 download 20 Weeks CoolSiC™ Active Not Applicable ROHS3 Compliant TO-247-4 Through Hole -55°C~175°C TJ SiCFET (Silicon Carbide) 150W Tc N-Channel 78m Ω @ 13A, 18V 5.7V @ 5.6mA 1.06nF @ 800V 31nC @ 18V 36A Tc 1.2kV 15V 18V +23V, -7V
FDPF5N50UT FDPF5N50UT ON Semiconductor 0.0000
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0.00000000 download 7 Weeks ACTIVE (Last Updated: 6 days ago) Through Hole Tube 2013 FRFET® yes Active 1 (Unlimited) 3 EAR99 10.36mm ROHS3 Compliant 3 TO-220-3 Full Pack not_compliant 16.07mm 4.9mm Through Hole 2.27g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB ISOLATED Single 28W 14 ns 28W Tc 4A SWITCHING 2Ohm 27 ns SILICON N-Channel 2 Ω @ 2A, 10V 5V @ 250μA 650pF @ 25V 15nC @ 10V 21ns 20 ns 30V 500V 4A 4A Tc 10V ±30V
RS1E220ATTB1 RS1E220ATTB1 ROHM Semiconductor 10.1128
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0.00000000 download 16 Weeks Cut Tape (CT) Active 1 (Unlimited) 5 ROHS3 Compliant 8-PowerTDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN 3W Ta SWITCHING 0.0058Ohm 30V SILICON P-Channel 4.1m Ω @ 22A, 10V 2.5V @ 2mA 5850pF @ 15V 130nC @ 10V 22A 22A Ta 76A Tc 30V 88A 74 mJ 4.5V 10V ±20V
TK4P60DA(T6RSS-Q) TK4P60DA(T6RSS-Q) Toshiba Semiconductor and Storage 0.0000
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0.00000000 16 Weeks Surface Mount Tape & Reel (TR) 2012 π-MOSVII Active 1 (Unlimited) RoHS Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 150°C TJ MOSFET (Metal Oxide) 1 80W 80W Tc 3.5A N-Channel 2.2 Ω @ 1.8A, 10V 4.4V @ 1mA 490pF @ 25V 11nC @ 10V 18ns 8 ns 30V 3.5A Ta 600V 10V ±30V
IPS65R400CEAKMA1 IPS65R400CEAKMA1 Infineon Technologies 0.0000
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0.00000000 download 18 Weeks 2013 yes Active 3 (168 Hours) EAR99 150°C -55°C ROHS3 Compliant Contains Lead not_compliant e3 Tin (Sn) Halogen Free 650V 650V
SIR164DP-T1-GE3 SIR164DP-T1-GE3 Vishay Siliconix 0.0000
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0.00000000 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 TrenchFET® yes Active 1 (Unlimited) 5 EAR99 4.9mm ROHS3 Compliant Lead Free No 8 PowerPAK® SO-8 Unknown 1.04mm 5.89mm 3.2MOhm Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL C BEND 260 40 8 R-PDSO-C5 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 69W 35 ns 1.2V 5.2W Ta 69W Tc 50A SWITCHING 52 ns SILICON N-Channel 2.5m Ω @ 15A, 10V 2.5V @ 250μA 3950pF @ 15V 123nC @ 10V 41ns 39 ns 20V 30V 33.3A 50A Tc 70A 4.5V 10V ±20V
DMP10H400SEQ-13 DMP10H400SEQ-13 Diodes Incorporated 0.0000
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0.00000000 download 17 Weeks Surface Mount Tape & Reel (TR) 2015 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 2W Ta 13.7W Tc 6A P-Channel 250m Ω @ 5A, 10V 3V @ 250μA 1239pF @ 25V 17.5nC @ 10V 2.3A Ta 6A Tc 100V 4.5V 10V ±20V
PSMN1R2-25YLDX PSMN1R2-25YLDX Nexperia USA Inc. 0.0000
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0.00000000 download 12 Weeks Surface Mount Tape & Reel (TR) 2011 Active 1 (Unlimited) 4 ROHS3 Compliant HIGH RELIABILITY SC-100, SOT-669 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING 4 R-PSSO-G4 IEC-60134 1 SINGLE WITH BUILT-IN DIODE MO-235 DRAIN 172W Tc 100A SWITCHING 0.00169Ohm 25V SILICON N-Channel 1.2m Ω @ 25A, 10V 2.2V @ 1mA 4327pF @ 12V 60.3nC @ 10V Schottky Diode (Body) 100A Tc 25V 1163A 1293 mJ 4.5V 10V ±20V
AUIRFR3806TRL AUIRFR3806TRL Infineon Technologies 0.0000
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0.00000000 download 16 Weeks Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 71W Tc SWITCHING 0.0158Ohm 60V SILICON N-Channel 15.8m Ω @ 25A, 10V 4V @ 50μA 1150pF @ 50V 30nC @ 10V 43A 43A Tc 60V 170A 73 mJ 10V ±20V
FQB47P06TM-AM002 FQB47P06TM-AM002 ON Semiconductor 0.0000
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0.00000000 download 7 Weeks ACTIVE (Last Updated: 22 hours ago) Tape & Reel (TR) 2013 QFET® yes Active 1 (Unlimited) 2 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.75W Ta 160W Tc SWITCHING 0.026Ohm 60V SILICON P-Channel 26m Ω @ 23.5A, 10V 4V @ 250μA 3600pF @ 25V 110nC @ 10V 47A 47A Tc 60V 188A 820 mJ 10V ±25V
BSH205,215 BSH205,215 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 1998 Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 e3 Tin (Sn) DUAL GULL WING 260 40 3 YES R-PDSO-G3 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE 417mW Ta SWITCHING 0.5Ohm 12V SILICON P-Channel 400m Ω @ 430mA, 4.5V 680mV @ 1mA 200pF @ 9.6V 3.8nC @ 4.5V 0.75A 750mA Ta 12V 1.8V 4.5V ±8V
BUK9E4R4-80E,127 BUK9E4R4-80E,127 NXP USA Inc. 0.0000
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0.00000000 Tube 2012 TrenchMOS™ Obsolete 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 NO R-PSIP-T3 FET General Purpose Power AEC-Q101; IEC-60134 1 SINGLE WITH BUILT-IN DIODE DRAIN 349W Tc SWITCHING 0.0044Ohm 80V SILICON N-Channel 4.2m Ω @ 25A, 10V 2.1V @ 1mA 17130pF @ 25V 123nC @ 5V 120A 120A Tc 80V 715A 488 mJ 5V 10V ±10V
IMZ120R030M1HXKSA1 IMZ120R030M1HXKSA1 Infineon Technologies 0.0000
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0.00000000 download 20 Weeks CoolSiC™ Active Not Applicable ROHS3 Compliant TO-247-4 Through Hole -55°C~175°C TJ SiCFET (Silicon Carbide) 227W Tc N-Channel 40m Ω @ 25A, 18V 5.7V @ 10mA 2.12nF @ 800V 63nC @ 18V 56A Tc 1.2kV 15V 18V +23V, -7V
RS1G120MNTB RS1G120MNTB ROHM Semiconductor 0.0000
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0.00000000 20 Weeks Surface Mount Cut Tape (CT) 2007 Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free 8 8-PowerTDFN Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 FET General Purpose Powers 1 SINGLE WITH BUILT-IN DIODE DRAIN 3W Ta 25W Tc 12A SWITCHING 0.0207Ohm 40V SILICON N-Channel 16.2m Ω @ 12A, 10V 2.5V @ 1mA 570pF @ 20V 9.4nC @ 10V 12A Ta 40V 4.5V 10V ±20V
IXTQ40N50Q IXTQ40N50Q IXYS 0.0000
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0.00000000 download Through Hole Tube 2004 yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 AVALANCHE RATED TO-3P-3, SC-65-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 500W 500W Tc 40A SWITCHING 0.16Ohm 56 ns SILICON N-Channel 160m Ω @ 500mA, 10V 4.5V @ 4mA 4500pF @ 25V 130nC @ 10V 20ns 14 ns 30V 500V 40A Tc 160A 2 mJ 10V ±30V
H5N2522LSTL-E H5N2522LSTL-E Renesas Electronics America 0.0000
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant SC-83 Surface Mount 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 75W Tc 20A SWITCHING 0.18Ohm 250V SILICON N-Channel 180m Ω @ 10A, 10V 1300pF @ 25V 47nC @ 10V 20A Ta 250V 60A 10V ±30V
HUF75617D3S HUF75617D3S ON Semiconductor 0.0000
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0.00000000 download Tube 2002 UltraFET™ Obsolete 1 (Unlimited) TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) TO-252AA 64W Tc N-Channel 90mOhm @ 16A, 10V 4V @ 250μA 570pF @ 25V 39nC @ 20V 16A Tc 100V 10V ±20V
PMN25EN,115 PMN25EN,115 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 2013 Obsolete 1 (Unlimited) ROHS3 Compliant SC-74, SOT-457 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 6 540mW Ta 6.25W Tc 2013-06-14 00:00:00 N-Channel 23m Ω @ 6.2A, 10V 2.5V @ 250μA 492pF @ 15V 11nC @ 10V 6.2A Ta 30V 4.5V 10V ±20V
IPC60R380E6X7SA1 IPC60R380E6X7SA1 Infineon Technologies 0.0000
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0.00000000 Obsolete 1 (Unlimited)
DMP3130LQ-7 DMP3130LQ-7 Diodes Incorporated 0.0000
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0.00000000 download 15 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-236-3, SC-59, SOT-23-3 No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) 260 30 700mW Ta 3.5A P-Channel 77m Ω @ 4.2A, 10V 1.3V @ 250μA 864pF @ 15V 24nC @ 10V 3.5A Ta 30V 2.5V 10V ±12V
2N7002WT3G 2N7002WT3G ON Semiconductor 0.0000
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0.00000000 Surface Mount Tape & Reel (TR) 2009 Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant No 3 SC-70, SOT-323 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 3 FET General Purpose Power 1 Single 280mW 12.2 ns 280mW Tj 310mA SWITCHING 55.8 ns SILICON N-Channel 1.6 Ω @ 500mA, 10V 2.5V @ 250μA 24.5pF @ 20V 0.7nC @ 4.5V 9ns 9 ns 20V 60V 310mA Ta 4.5V 10V ±20V
IRF6215SPBF IRF6215SPBF Infineon Technologies 0.0000
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0.00000000 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 110W Tc SWITCHING 0.29Ohm 150V SILICON P-Channel 290m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 13A 13A Tc 150V 44A 310 mJ 10V ±20V
TPH3208PS TPH3208PS Transphorm 0.0000
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0.00000000 download 12 Weeks Tube 2016 yes Active 1 (Unlimited) RoHS Compliant TO-220-3 Through Hole -55°C~150°C TJ GaNFET (Cascode Gallium Nitride FET) NOT SPECIFIED NOT SPECIFIED 96W Tc N-Channel 130m Ω @ 13A, 8V 2.6V @ 300μA 760pF @ 400V 14nC @ 8V 20A Tc 650V 10V ±18V
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