Call us: +86 0755-82563503

Currency: $ US Dollar

Items : %s%s

Single MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Pbfree Code Moisture Sensitivity Level (MSL) ECCN Code RoHS Status Additional Feature Reach Compliance Code Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Operating Temperature (Min) Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Number of Terminals Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Transistor Element Material Drain Current-Max (Abs) (ID) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss)
BSZ16DN25NS3 G BSZ16DN25NS3 G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 YES S-PDSO-N5 150°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 5 SWITCHING 0.165Ohm 250V METAL-OXIDE SEMICONDUCTOR SILICON 10.9A 44A 120 mJ
IPB65R420CFD IPB65R420CFD Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) RoHS Compliant compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-263AB N-CHANNEL 2 SWITCHING 0.42Ohm 650V METAL-OXIDE SEMICONDUCTOR SILICON 8.7A 27A 227 mJ
IPB034N06L3 G IPB034N06L3 G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant LOGIC LEVEL COMPATIBLE not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 175°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-263AB DRAIN N-CHANNEL 167W 2 SWITCHING 0.0034Ohm 60V METAL-OXIDE SEMICONDUCTOR SILICON 90A 360A 165 mJ
SPD04N50C3 SPD04N50C3 Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes 1 (Unlimited) RoHS Compliant AVALANCHE RATED compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252 DRAIN N-CHANNEL 50W 2 SWITCHING 0.95Ohm 500V METAL-OXIDE SEMICONDUCTOR SILICON 4.5A 13.5A 130 mJ
SPA03N60C3 SPA03N60C3 Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes RoHS Compliant AVALANCHE RATED compliant ENHANCEMENT MODE SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED N-CHANNEL 29.7W 3 SWITCHING 1.4Ohm 600V METAL-OXIDE SEMICONDUCTOR SILICON 2.8A 9.6A 100 mJ
IPP60R125C6 IPP60R125C6 Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes RoHS Compliant compliant ENHANCEMENT MODE SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB N-CHANNEL 219W 3 SWITCHING 0.125Ohm 600V METAL-OXIDE SEMICONDUCTOR SILICON 30A 89A 636 mJ
BSC900N20NS3 G BSC900N20NS3 G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 YES R-PDSO-F5 150°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 5 SWITCHING 0.09Ohm 200V METAL-OXIDE SEMICONDUCTOR SILICON 15.2A 61A 100 mJ
IPP200N25N3 G IPP200N25N3 G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes EAR99 RoHS Compliant compliant ENHANCEMENT MODE SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 175°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB N-CHANNEL 3 SWITCHING 0.02Ohm 250V METAL-OXIDE SEMICONDUCTOR SILICON 64A 256A 320 mJ
BSZ130N03LS G BSZ130N03LS G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE not_compliant ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD 8 YES S-PDSO-N5 150°C -55°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 25W 5 SWITCHING 0.013Ohm 30V METAL-OXIDE SEMICONDUCTOR SILICON 35A 140A 9 mJ
IPP60R950C6 IPP60R950C6 Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes RoHS Compliant compliant ENHANCEMENT MODE SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB N-CHANNEL 37W 3 SWITCHING 0.95Ohm 600V METAL-OXIDE SEMICONDUCTOR SILICON 4.4A 12A 46 mJ
IPP600N25N3 G IPP600N25N3 G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes EAR99 RoHS Compliant compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 175°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB N-CHANNEL 3 SWITCHING 0.06Ohm 250V METAL-OXIDE SEMICONDUCTOR SILICON 25A 100A 210 mJ
IPA50R250CP IPA50R250CP Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes RoHS Compliant compliant ENHANCEMENT MODE SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED N-CHANNEL 33W 3 SWITCHING 0.25Ohm 500V METAL-OXIDE SEMICONDUCTOR SILICON 13A 31A 345 mJ
IPP60R600C6 IPP60R600C6 Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes RoHS Compliant compliant ENHANCEMENT MODE SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB N-CHANNEL 63W 3 SWITCHING 0.6Ohm 600V METAL-OXIDE SEMICONDUCTOR SILICON 7.3A 19A 133 mJ
IPB065N15N3 G IPB065N15N3 G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G6 175°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-263 DRAIN N-CHANNEL 6 SWITCHING 0.0065Ohm 150V METAL-OXIDE SEMICONDUCTOR SILICON 130A 520A 780 mJ
IPD30N03S4L-09 IPD30N03S4L-09 Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes 1 (Unlimited) EAR99 RoHS Compliant compliant ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 175°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252 DRAIN N-CHANNEL 42W 2 0.009Ohm 30V METAL-OXIDE SEMICONDUCTOR SILICON 30A 120A 28 mJ
2N7002 L6327 2N7002 L6327 Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 1 (Unlimited) EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE compliant ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 40 3 YES R-PDSO-G3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE N-CHANNEL 0.5W 3 SWITCHING 3Ohm 60V METAL-OXIDE SEMICONDUCTOR SILICON 0.3A 3 pF
SPD18P06P G SPD18P06P G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant AVALANCHE RATED not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 175°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AB P-CHANNEL 2 0.13Ohm 60V METAL-OXIDE SEMICONDUCTOR SILICON 18.6A 74.4A 150 mJ
SPW20N60C3 SPW20N60C3 Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes RoHS Compliant AVALANCHE RATED compliant ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD N-CHANNEL 208W 3 0.19Ohm 600V METAL-OXIDE SEMICONDUCTOR SILICON 20.7A 62.1A 690 mJ
IPP60R160C6 IPP60R160C6 Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes RoHS Compliant compliant ENHANCEMENT MODE SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB N-CHANNEL 176W 3 SWITCHING 0.16Ohm 600V METAL-OXIDE SEMICONDUCTOR SILICON 23.8A 70A 497 mJ
BSC16DN25NS3 G BSC16DN25NS3 G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 YES R-PDSO-F5 150°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 5 SWITCHING 0.165Ohm 250V METAL-OXIDE SEMICONDUCTOR SILICON 10.9A 44A 120 mJ
IPB320N20N3 G IPB320N20N3 G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant not_compliant ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 175°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-263AB DRAIN N-CHANNEL 2 SWITCHING 0.032Ohm 200V METAL-OXIDE SEMICONDUCTOR SILICON 34A 136A 190 mJ
IPB020NE7N3 G IPB020NE7N3 G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 175°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-263AB DRAIN N-CHANNEL 2 SWITCHING 0.002Ohm 75V METAL-OXIDE SEMICONDUCTOR SILICON 120A 480A 1100 mJ
BSB165N15NZ3 G BSB165N15NZ3 G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes 3 (168 Hours) EAR99 RoHS Compliant compliant ENHANCEMENT MODE e4 Silver/Nickel (Ag/Ni) BOTTOM NO LEAD NOT SPECIFIED NOT SPECIFIED 3 YES R-MBCC-N3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 78W 3 SWITCHING 0.0165Ohm 150V METAL-OXIDE SEMICONDUCTOR SILICON 45A 180A 440 mJ
BSC014N04LS BSC014N04LS Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE not_compliant ENHANCEMENT MODE 8541.29.00.95 e3 TIN DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 YES R-PDSO-F3 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 3 SWITCHING 0.0019Ohm 40V METAL-OXIDE SEMICONDUCTOR SILICON 32A 400A 170 mJ
IPP320N20N3 G IPP320N20N3 G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes EAR99 RoHS Compliant compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 175°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB N-CHANNEL 3 SWITCHING 0.032Ohm 200V METAL-OXIDE SEMICONDUCTOR SILICON 34A 136A 190 mJ
IPA50R199CP IPA50R199CP Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes RoHS Compliant compliant ENHANCEMENT MODE 8541.29.00.95 SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED N-CHANNEL 34W 3 SWITCHING 0.199Ohm 500V METAL-OXIDE SEMICONDUCTOR SILICON 17A 40A 436 mJ
BSF030NE2LQ BSF030NE2LQ Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree yes 3 (168 Hours) EAR99 RoHS Compliant compliant ENHANCEMENT MODE 8541.29.00.95 e4 Silver/Nickel (Ag/Ni) BOTTOM NO LEAD 2 YES R-MBCC-N2 150°C -40°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 28W 2 SWITCHING 0.0041Ohm 25V METAL-OXIDE SEMICONDUCTOR SILICON 75A 300A 50 mJ
BSZ130N03MS G BSZ130N03MS G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant AVALANCHE RATED not_compliant ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 YES S-PDSO-N5 175°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 5 SWITCHING 0.015Ohm 30V METAL-OXIDE SEMICONDUCTOR SILICON 9A 140A 9 mJ
IPB036N12N3 G IPB036N12N3 G Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant not_compliant ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G6 175°C Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-263 DRAIN N-CHANNEL 6 SWITCHING 0.0036Ohm 120V METAL-OXIDE SEMICONDUCTOR SILICON 180A 720A 900 mJ
BSZ0901NS BSZ0901NS Infineon Technologies AG 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 icon-pbfree no 1 (Unlimited) EAR99 RoHS Compliant compliant ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 YES R-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 3 SWITCHING 0.0026Ohm 30V METAL-OXIDE SEMICONDUCTOR SILICON 22A 160A 150 mJ
Settings Need Help?
Top FAQ's

How can I quickly find answers to my questions?

Please visit the Help & Support area of our website to find information regarding ordering, shipping, delivery and more.

What is my Order Status?

Registered users can track orders from their account dropdown, or click here. *Order Status may take 12 hours to update after initial order is placed.

How do I return product?

Users can begin the returns process by starting with our Returns Page.

How do I find price and availability?

Quotes can be created by registered users in myLists.

How do I create a 'HK JDW' Account?

Visit the Registration Page and enter the required information. You will receive an email confirmation when your registration is complete.

United Kingdom/GBP Summary
Fast Shipping Fast Delivery

Orders are typically delivered to United Kingdom within 48 hours depending on location.

Free Shipping Free Shipping

Free delivery to United Kingdom on orders of £33 or more. A delivery charge of £12 will be billed on all orders less than £33.

Incoterms Incoterms

DDP (Duty and customs paid by HK JDW)

Payment Options Payment Types

Credit account for qualified institutions and businesses

Payment in Advance by Wire Transfer

Visa Mastercard American Express PayPal Apple Pay Google Pay

Marketplace Marketplace Product

More Products From Fully Authorized Partners

Average Time to Ship 1-3 Days, extra ship charges may apply. Please see product page, cart, and checkout for actual ship speed.

Incoterms: CPT (Duty, customs, and applicable VAT/Tax due at time of delivery)

For more information visit Help & Support