Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Input Capacitance | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRG4BC20UPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2000 | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.668mm | RoHS Compliant | Contains Lead, Lead Free | 13A | No | 3 | ULTRA FAST | TO-220-3 | No SVHC | 16.51mm | 4.826mm | Through Hole | -55°C~150°C TJ | 600V | Standard | Insulated Gate BIP Transistors | 60W | 1 | TO-220AB | N-CHANNEL | Single | 60W | 21 ns | 13A | 600V | 2.1V | POWER CONTROL | 86 ns | SILICON | 13ns | 530pF | 2.1V | 34 ns | 2.1V @ 15V, 6.5A | 330 ns | 20V | 6V | 180ns | 480V, 6.5A, 50 Ω, 15V | 27nC | 52A | 21ns/86ns | 100μJ (on), 120μJ (off) | |||||||||||||||||||||||||||||||||||
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APT50GP60B2DQ2G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Not For New Designs | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 150A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 Variant | Through Hole | -55°C~150°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | Insulated Gate BIP Transistors | 625W | 1 | COLLECTOR | N-CHANNEL | Single | 150A | 600V | 600V | POWER CONTROL | SILICON | 55 ns | 2.7V @ 15V, 50A | 200 ns | PT | 6V | 400V, 50A, 4.3 Ω, 15V | 165nC | 190A | 19ns/85ns | 465μJ (on), 635μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
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SIGC15T60EX1SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2010 | TrenchStop™ | no | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | YES | Insulated Gate BIP Transistors | N-CHANNEL | 1.9V @ 15V, 30A | Trench Field Stop | 20V | 600V | 30A | 6.5V | 90A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXGA50N60C4 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2011 | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | SINGLE | GULL WING | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | SINGLE | TO-263AA | COLLECTOR | N-CHANNEL | 90A | 600V | 2.3V | POWER CONTROL | SILICON | 75 ns | 2.3V @ 15V, 36A | 306 ns | PT | 20V | 6.5V | 400V, 36A, 10 Ω, 15V | 113nC | 220A | 40ns/270ns | 950μJ (on), 840μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| FGP20N60UFDTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-220-3 | 16.51mm | 4.83mm | Through Hole | 1.8g | -55°C~150°C TJ | Standard | 8541.29.00.95 | Insulated Gate BIP Transistors | 165W | 165W | 1 | TO-220AB | N-CHANNEL | Single | 13 ns | 35 ns | 40A | 600V | 600V | POWER CONTROL | 87 ns | SILICON | 29 ns | 2.4V @ 15V, 20A | 155 ns | Field Stop | 20V | 6.5V | 64ns | 400V, 20A, 10 Ω, 15V | 63nC | 60A | 13ns/87ns | 380μJ (on), 260μJ (off) | |||||||||||||||||||||||||||||||||||||
| LGB8245TI | Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Active | 1 (Unlimited) | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRG4PC40K | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2000 | Obsolete | 1 (Unlimited) | 3 | Non-RoHS Compliant | ULTRA FAST | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | Not Qualified | 160W | 1 | SINGLE | TO-247AC | COLLECTOR | N-CHANNEL | MOTOR CONTROL | SILICON | 48 ns | 2.6V @ 15V, 25A | 340 ns | 600V | 42A | 480V, 25A, 10 Ω, 15V | 120nC | 84A | 30ns/140ns | 620μJ (on), 330μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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FGB40N60SM | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 1.31247g | -55°C~175°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | FGB40N60 | R-PSSO-G2 | Insulated Gate BIP Transistors | 349W | 349W | 1 | COLLECTOR | N-CHANNEL | Single | 600V | 80A | 600V | 600V | 28ns | POWER CONTROL | SILICON | 2.3V | 37 ns | 2.3V @ 15V, 40A | 132 ns | Field Stop | 20V | 6V | 17ns | 400V, 40A, 6 Ω, 15V | 119nC | 120A | 12ns/92ns | 870μJ (on), 260μJ (off) | ||||||||||||||||||||||||||||||||
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APT25GR120BD15 | Microsemi Corporation | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | EAR99 | 21.46mm | RoHS Compliant | Lead Free | TO-247-3 | 5.31mm | 16.26mm | Through Hole | 38.000013g | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | N-CHANNEL | Single | 75A | 1.2kV | 1.2kV | 2.5V | 3.2V @ 15V, 25A | NPT | 30V | 1200V | 75A | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
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IXBR42N170 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | Through Hole | Tube | 2008 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | UL RECOGNIZED | ISOPLUS247™ | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXB*42N170 | 247 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 200W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 1.32 μs | 57A | 1.7kV | 2.9V | POWER CONTROL | SILICON | 224 ns | 2.9V @ 15V, 42A | 1070 ns | 20V | 1700V | 5.5V | 188nC | 300A | |||||||||||||||||||||||||||||||||||||||||
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APT50GR120L | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 21 Weeks | IN PRODUCTION (Last Updated: 2 days ago) | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 694W | 694W | N-CHANNEL | 117A | 1.2kV | 3.2V | 3.2V @ 15V, 50A | NPT | 30V | 1200V | 6.5V | 600V, 50A, 4.3 Ω, 15V | 445nC | 200A | 28ns/237ns | 2.14mJ (on), 1.48mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NGTB15N120LWG | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 229W | TO-247 | 2.2V @ 15V, 15A | Trench Field Stop | 1.2V | 30A | 600V, 15A, 15Ohm, 15V | 160nC | 120A | 72ns/165ns | 2.1mJ (on), 560μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXSK50N60AU1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2010 | yes | Obsolete | 1 (Unlimited) | 3 | 150°C | -55°C | RoHS Compliant | 3 | HIGH SPEED | TO-264-3, TO-264AA | Through Hole | 10.000011g | Standard | e3 | Matte Tin (Sn) | 260 | 35 | IXS*50N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 50ns | 75A | 600V | 600V | POWER CONTROL | 300 ns | 2.7V @ 15V, 50A | 740 ns | 20V | 2.7 V | 7V | 600ns | 480V, 50A, 2.7 Ω, 15V | 190nC | 200A | 70ns/200ns | 6mJ (off) | |||||||||||||||||||||||||||||||||||||||||
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IXGB75N60BD1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2002 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 360W | 360W | 1 | COLLECTOR | N-CHANNEL | Single | 50ns | 120A | 600V | 600V | POWER CONTROL | SILICON | 133 ns | 2.3V @ 15V, 75A | 600 ns | 20V | 5.5V | 480V, 75A, 5 Ω, 15V | 248nC | 300A | 62ns/220ns | 3.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
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IXGH36N60B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Through Hole | Tube | 2010 | GenX3™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | R-PSFM-T3 | Insulated Gate BIP Transistors | 250W | 250W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | 92A | 600V | 1.8V | POWER CONTROL | SILICON | 45 ns | 1.8V @ 15V, 30A | 350 ns | PT | 20V | 5V | 160ns | 400V, 30A, 5 Ω, 15V | 80nC | 200A | 19ns/125ns | 540μJ (on), 800μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
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APT35GP120BG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 23 Weeks | Through Hole | Tube | 1999 | POWER MOS 7® | yes | Active | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 96A | No | 3 | ULTRA FAST, LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 543W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 96A | 1.2kV | 3.9V | POWER CONTROL | SILICON | 36 ns | 3.9V @ 15V, 35A | 222 ns | PT | 20V | 1200V | 6V | 600V, 35A, 5 Ω, 15V | 150nC | 140A | 16ns/94ns | 750μJ (on), 680μJ (off) | |||||||||||||||||||||||||||||||||||||||
| RGT16TM65DGC9 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 22W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | N-CHANNEL | 42ns | POWER CONTROL | SILICON | 27 ns | 2.1V @ 15V, 8A | 170 ns | Trench Field Stop | 650V | 9A | 400V, 8A, 10 Ω, 15V | 21nC | 24A | 13ns/33ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRG4BC20WPBF | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | 60W | TO-220AB | 2.6V @ 15V, 6.5A | 600V | 13A | 480V, 6.5A, 50Ohm, 15V | 26nC | 52A | 22ns/110ns | 60μJ (on), 80μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXXP50N60B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Tube | XPT™, GenX3™ | Active | 3 | RoHS Compliant | TO-220-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | SINGLE | 3 | NO | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 600W | 1 | SINGLE | TO-220AB | COLLECTOR | N-CHANNEL | 600W | 40ns | POWER CONTROL | SILICON | 75 ns | 1.8V @ 15V, 36A | 320 ns | 20V | 600V | 120A | 5.5V | 360V, 36A, 5 Ω, 15V | 70nC | 200A | 27ns/150ns | 670μJ (on), 1.2mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
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DGTD65T15H2TF | Diodes Incorporated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 22 Weeks | Tube | 2017 | Active | Not Applicable | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack, Isolated Tab | not_compliant | Through Hole | -40°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 48W | 150ns | 2V @ 15V, 15A | Field Stop | 650V | 30A | 400V, 15A, 10 Ω, 15V | 61nC | 60A | 19ns/128ns | 270μJ (on), 86μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA70N30TDTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2007 | Obsolete | 1 (Unlimited) | RoHS Compliant | 3 | TO-3P-3, SC-65-3 | Through Hole | -55°C~150°C TJ | Standard | 201W | Single | 21ns | 300V | 1.5V | 1.5V @ 15V, 20A | Trench | 125nC | 160A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRGI4086PBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2009 | Obsolete | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | No | 3 | TO-220-3 Full Pack | No SVHC | Through Hole | -40°C~150°C TJ | Standard | 43W | 43W | Single | 43W | TO-220AB Full-Pak | 25A | 300V | 2.96V | 1.55V | 2.96V @ 15V, 120A | Trench | 300V | 25A | 196V, 25A, 10Ohm | 65nC | 36ns/112ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STGW50HF60SD | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-247-3 | No SVHC | Through Hole | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | STGW50 | Insulated Gate BIP Transistors | 284W | 1 | N-CHANNEL | Single | 284W | 67 ns | 110A | 600V | 600V | POWER CONTROL | SILICON | 1.15V | 69 ns | 1.45V @ 15V, 30A | 950 ns | 20V | 5.7V | 400V, 30A, 10 Ω, 15V | 200nC | 130A | 50ns/220ns | 250μJ (on), 4.2mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
| RGTH50TK65DGC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-3PFM, SC-93-3 | not_compliant | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 59W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 58ns | POWER CONTROL | SILICON | 65 ns | 2.1V @ 15V, 25A | 172 ns | Trench Field Stop | 650V | 26A | 400V, 25A, 10 Ω, 15V | 49nC | 100A | 27ns/94ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXGH40N60B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2001 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*40N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 75A | 600V | 1.2kV | POWER CONTROL | SILICON | 60 ns | 2.1V @ 15V, 40A | 570 ns | 20V | 5V | 480V, 40A, 4.7 Ω, 15V | 116nC | 150A | 25ns/180ns | 2.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| RGTV00TK65DGC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-3PFM, SC-93-3 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 94W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 102ns | POWER CONTROL | SILICON | 62 ns | 1.9V @ 15V, 50A | 247 ns | Trench Field Stop | 650V | 45A | 400V, 50A, 10 Ω, 15V | 104nC | 200A | 41ns/142ns | 1.17mJ (on), 940μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXSH24N60A | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2008 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | HIGH SPEED | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXS*24N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 48A | 600V | 2.7V | POWER CONTROL | SILICON | 300 ns | 2.7V @ 15V, 24A | 925 ns | PT | 20V | 6.5V | 500ns | 480V, 24A, 10 Ω, 15V | 75nC | 96A | 100ns/450ns | 2mJ (off) | |||||||||||||||||||||||||||||||||||||||
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IXYH40N65C3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2014 | GenX3™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | 38.000013g | -55°C~175°C TJ | Standard | 300W | 300W | Single | 80A | 650V | 2.2V | 1.85V | 2.2V @ 15V, 40A | PT | 400V, 30A, 10 Ω, 15V | 70nC | 180A | 26ns/106ns | 860μJ (on), 400μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FGB30N6S2T | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | yes | Obsolete | 1 (Unlimited) | 2 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | e3 | MATTE TIN | SINGLE | GULL WING | 260 | NOT SPECIFIED | 3 | YES | R-PSSO-G2 | COMMERCIAL | 167W | 1 | SINGLE | COLLECTOR | N-CHANNEL | POWER CONTROL | SILICON | 28 ns | 2.5V @ 15V, 12A | 163 ns | 600V | 45A | 390V, 12A, 10 Ω, 15V | 23nC | 108A | 6ns/40ns | 55μJ (on), 110μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
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IXDA20N120AS | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | HIGH SPEED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | 1.59999g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXD*20N120 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | COLLECTOR | N-CHANNEL | Single | 34A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 2.8V | 120 ns | 3V @ 15V, 20A | 450 ns | NPT | 20V | 1200V | 38A | 6.5V | 600V, 20A, 82 Ω, 15V | 70nC | 3.1mJ (on), 2.4mJ (off) |
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