Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Case Connection | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RGW80TS65DGC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 214W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 92ns | POWER CONTROL | SILICON | 59 ns | 1.9V @ 15V, 40A | 228 ns | Trench Field Stop | 650V | 78A | 400V, 40A, 10 Ω, 15V | 110nC | 160A | 44ns/143ns | 760μJ (on), 720μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXXH75N60C3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | SINGLE | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 750W | 750W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 25 ns | 150A | 600V | 2.3V | POWER CONTROL | SILICON | 105 ns | 2.3V @ 15V, 60A | 185 ns | PT | 20V | 5.5V | 400V, 60A, 5 Ω, 15V | 107nC | 300A | 35ns/90ns | 1.6mJ (on), 800μJ (off) | |||||||||||||||||||||||||||||||||||||||||
 |
IXGR72N60C3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | ISOPLUS247™ | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*72N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 200W | 35ns | 75A | 600V | 2.7V | POWER CONTROL | SILICON | 2.1V | 62 ns | 2.7V @ 15V, 50A | 244 ns | PT | 20V | 5.5V | 110ns | 480V, 50A, 2 Ω, 15V | 175nC | 400A | 27ns/77ns | 1.03mJ (on), 480μJ (off) | |||||||||||||||||||||||||||||||||
 |
IXGA16N60B2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2010 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 1.59999g | -55°C~150°C TJ | Standard | Pure Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*16N60 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | COLLECTOR | N-CHANNEL | Single | 30ns | 40A | 600V | 600V | POWER CONTROL | SILICON | 2.3V | 43 ns | 1.95V @ 15V, 12A | 280 ns | PT | 20V | 5.5V | 400V, 12A, 22 Ω, 15V | 24nC | 100A | 18ns/73ns | 160μJ (on), 120μJ (off) | ||||||||||||||||||||||||||||||||||||
 |
IRGS15B60KDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Tube | 2004 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.668mm | RoHS Compliant | No | 3 | ULTRA FAST | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.572mm | 9.652mm | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | IRGS15B60KDPBF | R-PSSO-G2 | Insulated Gate BIP Transistors | 208W | 208W | 1 | COLLECTOR | N-CHANNEL | Single | 139W | 92 ns | 31A | 600V | 2.2V | 25ns | MOTOR CONTROL | SILICON | 1.8V | 52 ns | 2.2V @ 15V, 15A | 231 ns | NPT | 20V | 5.5V | 400V, 15A, 22 Ω, 15V | 56nC | 62A | 34ns/184ns | 220μJ (on), 340μJ (off) | |||||||||||||||||||||||||||||
 |
SIGC03T60EX7SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | TrenchStop™ | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -40°C~175°C TJ | Standard | Die | 1.9V @ 15V, 4A | Trench Field Stop | 600V | 4A | 12A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SGW10N60RUFDTM | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | SG*10N60 | 75W | D2PAK | 60ns | 2.8V @ 15V, 10A | 600V | 16A | 300V, 10A, 20Ohm, 15V | 30nC | 30A | 15ns/36ns | 141μJ (on), 215μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGPR10BM40FHTL | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 17 Weeks | Tape & Reel (TR) | 2015 | Automotive, AEC-Q101 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -40°C~75°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 107W | 2.0V @ 5V, 10A | 460V | 20A | 300V, 8A, 100 Ω, 5V | 14nC | 500ns/4μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRGC4064B | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Bulk | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Die | Surface Mount | 175°C TJ | Standard | UPPER | NO LEAD | YES | S-XUUC-N2 | 1 | SINGLE | N-CHANNEL | MOTOR CONTROL | SILICON | Trench | 600V | 10A | 6.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGR32N60C | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2004 | HiPerFAST™, Lightspeed™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 247 | ISOPLUS247™ | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*32N60 | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 140W | 140W | 1 | ISOLATED | N-CHANNEL | Single | 25 ns | 45A | 600V | 600V | POWER CONTROL | 85 ns | SILICON | 50 ns | 2.7V @ 15V, 32A | 215 ns | 20V | 5V | 160ns | 480V, 32A, 4.7 Ω, 15V | 110nC | 120A | 25ns/85ns | 320μJ (off) | |||||||||||||||||||||||||||||||||||
 |
RJH60F7ADPK-00#T0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | 3 | TO-3P-3, SC-65-3 | Through Hole | 150°C TJ | Standard | RJH60F | 4 | 328.9W | 328.9W | Single | 140 ns | 90A | 600V | 600V | 1.75V @ 15V, 50A | Trench | 400V, 30A, 5 Ω, 15V | 63ns/142ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGP4063D-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2006 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | No | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | IRGP4063D | Insulated Gate BIP Transistors | 330W | N-CHANNEL | Single | 330W | 115 ns | 96A | 600V | 2.14V | 56ns | 2.05V | 2.14V @ 15V, 48A | Trench | 20V | 6.5V | 46ns | 400V, 48A, 10 Ω, 15V | 140nC | 200A | 60ns/145ns | 625μJ (on), 1.28mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
|
IXYH40N90C3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 500W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 500W | 100ns | 90A | 900V | 900V | POWER CONTROL | SILICON | 2.2V | 81 ns | 2.5V @ 15V, 40A | 237 ns | 20V | 5.5V | 450V, 40A, 5 Ω, 15V | 74nC | 180A | 27ns/78ns | 1.9mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
 |
IXGT32N90B2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 2005 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*32N90 | 4 | R-PSSO-G2 | Not Qualified | 300W | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 190 ns | 64A | 900V | 900V | POWER CONTROL | SILICON | 42 ns | 2.7V @ 15V, 32A | 690 ns | 720V, 32A, 5 Ω, 15V | 89nC | 200A | 20ns/260ns | 2.2mJ (off) | ||||||||||||||||||||||||||||||||||||||
 |
IXYN30N170CV1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Chassis Mount | Tube | 2016 | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | SOT-227-4, miniBLOC | unknown | Chassis Mount | -55°C~175°C TJ | Standard | 680W | 680W | 160 ns | 88A | 1.7kV | 3.7V | 3.7V @ 15V, 30A | 1700V | 850V, 30A, 2.7 Ω, 15V | 140nC | 275A | 28ns/150ns | 5.9mJ (on), 3.3mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGQ28N120BD1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-3P-3, SC-65-3 | Through Hole | 5.500006g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | IXG*28N120 | 2 | Not Qualified | 250W | 250W | 1 | COLLECTOR | N-CHANNEL | Single | 40 ns | 50A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 63 ns | 3.5V @ 15V, 28A | 550 ns | 1200V | 960V, 28A, 5 Ω, 15V | 92nC | 150A | 30ns/180ns | 2mJ (off) | ||||||||||||||||||||||||||||||||||||||||
|
IXGH24N60C4D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2011 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 190W | 190W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 25 ns | 56A | 600V | 2.7V | POWER CONTROL | SILICON | 52 ns | 2.7V @ 15V, 24A | 248 ns | PT | 20V | 5V | 360V, 24A, 10 Ω, 15V | 64nC | 130A | 21ns/143ns | 400μJ (on), 300μJ (off) | ||||||||||||||||||||||||||||||||||||||||
 |
IXGK72N60B3H1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*72N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 540W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 540W | 140 ns | 75A | 600V | 1.8V | POWER CONTROL | SILICON | 600V | 63 ns | 1.8V @ 15V, 60A | 370 ns | PT | 20V | 5V | 150ns | 480V, 50A, 3 Ω, 15V | 225nC | 450A | 31ns/152ns | 1.4mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||
|
IXGT40N60B2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2004 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*40N60 | 4 | R-PSSO-G2 | Not Qualified | 300W | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 25 ns | 75A | 600V | 600V | POWER CONTROL | SILICON | 1.7V | 38 ns | 1.7V @ 15V, 30A | 390 ns | PT | 400V, 30A, 3.3 Ω, 15V | 100nC | 200A | 18ns/130ns | 400μJ (off) | ||||||||||||||||||||||||||||||||||||||
|
IRGP6630D-EPBF | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | 192W | TO-247AD | 70ns | 1.95V @ 15V, 18A | 600V | 47A | 400V, 18A, 22Ohm, 15V | 30nC | 54A | 40ns/95ns | 75μJ (on), 350μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
APT50GN120L2DQ2G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 26.49mm | RoHS Compliant | Lead Free | 134A | No | 3 | HIGH RELIABILITY | TO-264-3, TO-264AA | 5.21mm | 20.5mm | Through Hole | 10.6g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 543W | 1 | COLLECTOR | N-CHANNEL | Single | 28 ns | 134A | 1.2kV | 1.2kV | POWER CONTROL | 320 ns | SILICON | 1.7V | 55 ns | 2.1V @ 15V, 50A | 600 ns | NPT, Trench Field Stop | 1200V | 134A | 6.5V | 800V, 50A, 2.2 Ω, 15V | 315nC | 150A | 28ns/320ns | 4495μJ (off) | ||||||||||||||||||||||||||||||
|
IXGK120N60B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2004 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-264-3, TO-264AA | Through Hole | 10.000011g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*120N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 660W | 660W | 1 | COLLECTOR | N-CHANNEL | Single | 200A | 600V | 600V | POWER CONTROL | SILICON | 2.1V | 120 ns | 2.1V @ 15V, 120A | 540 ns | PT | 20V | 5.5V | 280ns | 480V, 100A, 2.4 Ω, 15V | 350nC | 300A | 60ns/200ns | 2.4mJ (on), 5.5mJ (off) | ||||||||||||||||||||||||||||||||||||||
 |
IRG7PH42UPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2005 | Obsolete | 1 (Unlimited) | EAR99 | 15.87mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | Through Hole | 38.000013g | -55°C~175°C TJ | Standard | Insulated Gate BIP Transistors | 385W | N-CHANNEL | Single | 385W | 25 ns | 90A | 1.2kV | 2V | 41ns | 229 ns | 1.7V | 2V @ 15V, 30A | Trench | 1200V | 6V | 86ns | 600V, 30A, 10 Ω, 15V | 157nC | 25ns/229ns | 2.11mJ (on), 1.18mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
|
IRGS4715DPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2014 | Obsolete | 1 (Unlimited) | EAR99 | 10.67mm | RoHS Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 100W | 100W | Single | 86 ns | 21A | 650V | 2V | 1.7V | 2V @ 15V, 8A | 400V, 8A, 50 Ω, 15V | 30nC | 24A | 30ns/100ns | 200μJ (on), 90μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
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IXSX35N120BD1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | 7.300002g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXS*35N120 | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 40 ns | 70A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 3.6V | 67 ns | 3.6V @ 15V, 35A | 580 ns | PT | 20V | 1200V | 6V | 960V, 35A, 5 Ω, 15V | 120nC | 140A | 36ns/160ns | 5mJ (off) | |||||||||||||||||||||||||||||||||||
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ISL9V3040D3ST | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | EcoSPARK® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | 21A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | 260.36202mg | -40°C~175°C TJ | 400V | Logic | 21A | e3 | GULL WING | ISL9V3040 | R-PSSO-G2 | Insulated Gate BIP Transistors | 150W | 400V | 1 | TO-252AA | 1 | COLLECTOR | N-CHANNEL | Single | 150W | 4 μs | 430V | 21A | 430V | 390V | AUTOMOTIVE IGNITION | 15 μs | SILICON | 2.1μs | 1.9V | 2800 ns | 1.6V @ 4V, 6A | 7600 ns | 300V, 1k Ω, 5V | 17nC | -/4.8μs | ||||||||||||||||||||||||||
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APT20GN60BDQ1G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 25 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 40A | No | TO-247-3 | Through Hole | -55°C~175°C TJ | 600V | Standard | e1 | TIN SILVER COPPER | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 136W | 1 | COLLECTOR | N-CHANNEL | Single | 40A | 600V | 600V | POWER CONTROL | SILICON | 19 ns | 1.9V @ 15V, 20A | 290 ns | Trench Field Stop | 30V | 6.5V | 400V, 20A, 4.3 Ω, 15V | 120nC | 60A | 9ns/140ns | 230μJ (on), 580μJ (off) | ||||||||||||||||||||||||||||||||||||||||
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AUIRGF66524D0 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tube | 2014 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 214W | 176ns | 1.9V @ 15V, 24A | 600V | 60A | 400V, 24A, 10 Ω, 15V | 80nC | 72A | 30ns/75ns | 915μJ (on), 280μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRGP20B60PDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Bulk | 2003 | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.9mm | ROHS3 Compliant | Lead Free | 40A | No | 3 | HIGH RELIABILITY, LOW CONDUCTION LOSS | TO-247-3 | No SVHC | 20.3mm | 5.3mm | Through Hole | -55°C~150°C TJ | 600V | Standard | Insulated Gate BIP Transistors | 220W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 220W | 20 ns | 42 ns | 40A | 600V | 2.8V | POWER CONTROL | 115 ns | SILICON | 5ns | 2.05V | 25 ns | 2.8V @ 15V, 20A | 138 ns | NPT | 20V | 5V | 17ns | 390V, 13A, 10 Ω, 15V | 68nC | 80A | 20ns/115ns | 95μJ (on), 100μJ (off) | |||||||||||||||||||||||||||||
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APT25GR120B | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Through Hole | Bulk | 2001 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | 521W | N-CHANNEL | Single | 16 ns | 75A | 1.2kV | 3.2V | 122 ns | 3.2V @ 15V, 25A | NPT | 30V | 1200V | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 742μJ (on), 427μJ (off) |
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IRGS15B60KDPBF Infineon Technologies
IRGS15B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IRGP4063D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IRG7PH42UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IRGS4715DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IRGP20B60PDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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