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IGBTs Modules
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IGBT module product filter
Common filter conditions include, manufacturer, configuration, collector maximum current, voltage, pin count, etc.
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 12 Weeks
- 14 Weeks
- 16 Weeks
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Panel, Screw
- Screw
Mounting Type
- Chassis Mount
Number of Pins
- 20
- 23
- 24
- 29
- 7
Number of Terminations
- 20
- 23
- 24
- 29
- 35
- 7
Operating Temperature
- -40°C~125°C
- -40°C~125°C TJ
- -40°C~150°C
- -40°C~150°C TJ
Package / Case
- Module
Part Status
- Active
- Not For New Designs
Pbfree Code
- no
- yes
Published
- 2001
- 2002
- 2014
Series
- C
Surface Mount
- NO
Transistor Element Material
- SILICON
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | Polarity | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Element Configuration | Power Dissipation | Supplier Device Package | Input | Max Repetitive Reverse Voltage (Vrrm) | Power Dissipation-Max | Reverse Voltage | Number of Terminals | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Transistor Element Material | Input Capacitance | Collector-Emitter Voltage-Max | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Channel Type | Gate-Emitter Thr Voltage-Max | Maximum Operating Temperature (°C) | Minimum Operating Temperature (°C) | Mounting | Package Height | Package Length | Package Width | PCB changed | Supplier Package | ECCN (US) | AEC Qualified | Military | Typical Collector Emitter Saturation Voltage (V) | Maximum Collector-Emitter Voltage (V) | Maximum Gate Emitter Voltage (V) | Maximum Continuous Collector Current (A) |
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BSM200GB60DLC | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | icon-pbfree yes | EAR99 | RoHS Compliant | compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 7 | NO | R-XUFM-X7 | 175°C | Insulated Gate BIP Transistors | Not Qualified | 2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 730W | 230A | 7 | SILICON | 600V | 229 ns | 326 ns | 20V | 2.45 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FZ1200R33KF2CNOSA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | Module | Chassis Mount | -40°C~125°C | 14500W | Full Bridge | Standard | 12mA | 4.25V @ 15V, 1.2kA | No | 150nF @ 25V | 3300V | 2000A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SEMIX653GAR176HDS | Semikron | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Active | Yes with exemptions | 11 | Single | N | 150 | -40 | Screw | 17 | 149.5 | 63.5 | 11 | Case GAR | EAR99 | No | No | 2 | 1700 | ±20 | 619 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-GT200TP065N | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Chassis Mount, Screw | 2016 | Last Time Buy | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 7 | INT-A-Pak | Chassis Mount | -40°C~175°C TJ | 600W | 600W | Half Bridge | Single | Standard | 221A | 650V | 2.12V | 60μA | 2.12V @ 15V, 200A | Trench | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CM50BU-24H | Powerex Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2004 | IGBTMOD™ | yes | Obsolete | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | 4 | Module | Chassis Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | 12 | R-XUFM-X12 | Insulated Gate BIP Transistors | 400W | 400W | 4 | Full Bridge Inverter | ISOLATED | N-CHANNEL | Standard | 50A | 1.2kV | 3.7V | MOTOR CONTROL | SILICON | 7.5nF | 1mA | 3.7V @ 15V, 50A | No | 20V | 7.5nF @ 10V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MUBW30-06A7 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Chassis Mount, Screw | Bulk | 2001 | yes | Active | 1 (Unlimited) | 24 | ROHS3 Compliant | Lead Free | 2 | LOW SWITCHING LOSS, LOW SATURATION VOLTAGE | E2 | Chassis Mount | -40°C~125°C TJ | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | MUBW | Not Qualified | 180W | 180W | 7 | Three Phase Inverter with Brake | ISOLATED | N-CHANNEL | Three Phase Bridge Rectifier | 1.6kV | 50A | 600V | 2.3V | POWER CONTROL | SILICON | 1.6nF | 600μA | 100 ns | 2.3V @ 15V, 30A | 310 ns | NPT | Yes | 1.6nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FF600R12IE4VBOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 50 Weeks | 2002 | Active | 1 (Unlimited) | 10 | EAR99 | Non-RoHS Compliant | Contains Lead | Module | Chassis Mount | -40°C~150°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NO | R-PUFM-X10 | 3350W | 2 | 2 Independent | ISOLATED | Not Halogen Free | N-CHANNEL | Dual | Standard | GENERAL PURPOSE | SILICON | 5mA | 410 ns | 2.05V @ 15V, 600A | 1020 ns | Trench Field Stop | Yes | 37nF @ 25V | 1200V | 600A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FF300R07ME4B11BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | 2002 | Active | Not Applicable | EAR99 | RoHS Compliant | Module | compliant | Chassis Mount | -40°C~150°C | NOT SPECIFIED | NOT SPECIFIED | 1100W | 2 Independent | Standard | 1mA | 1.95V @ 15V, 300A | Trench Field Stop | Yes | 18.5nF @ 25V | 650V | 390A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FS50R07W1E3B11ABOMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Screw | 2006 | Active | 1 (Unlimited) | 18 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Contains Lead | 18 | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 205W | 6 | ISOLATED | Not Halogen Free | N-CHANNEL | Single | 650V | 70A | 650V | POWER CONTROL | 1.7V | 45 ns | 250 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FS200R12PT4 | Infineon | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Through Hole | yes | 1 | 20 | EAR99 | 150°C | -40°C | RoHS Compliant | 20 | Module | No SVHC | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 20 | Insulated Gate BIP Transistors | Not Qualified | 6 | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | N-CHANNEL | 1kW | 1kW | 280A | 1.2kV | 1.2kV | POWER CONTROL | 2.15V | 190 ns | 600 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| F3L300R12ME4_B23 | Infineon | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | no | 11 | EAR99 | RoHS Compliant | Contains Lead | Module | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 11 | NO | R-XUFM-X11 | 2 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | Not Halogen Free | N-CHANNEL | 450A | POWER CONTROL | SILICON | 1200V | 290 ns | 960 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APT100GF60JU3 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | 2006 | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | 150°C | -55°C | 38.2mm | RoHS Compliant | 4 | AVALANCHE RATED | ISOTOP | 9.6mm | 25.4mm | Chassis Mount | 30.000004g | UPPER | UNSPECIFIED | 4 | Insulated Gate BIP Transistors | 416W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 120A | 600V | 600V | POWER CONTROL | 4.3nF | 100μA | 2.1V | 51 ns | 2.5V @ 15V, 100A | 210 ns | NPT | No | 20V | 4.3nF @ 25V | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CM600HA-12H | Powerex Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 1998 | IGBTMOD™ | Obsolete | 1 (Unlimited) | 4 | Non-RoHS Compliant | 4 | Module | Chassis Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | Insulated Gate BIP Transistors | 2.1kW | 2100W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 600A | 600V | 2.8V | MOTOR CONTROL | SILICON | 60nF | 1mA | 2.8V @ 15V, 600A | No | 20V | 60nF @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CM150TX-24S1 | Powerex Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2012 | Discontinued | 1 (Unlimited) | 150°C | RoHS Compliant | 35 | Module | Unknown | -40°C~150°C TJ | 935W | 935W | Three Level Inverter | Module | Standard | 150A | 1.2kV | 2.25V | 15nF | 1mA | 1.8V | 2.25V @ 15V, 150A | Yes | 15nF @ 10V | 1200V | 150A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT50DH170TG | Microsemi Corporation | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Chassis Mount, Screw | yes | Active | 1 (Unlimited) | 14 | EAR99 | RoHS Compliant | No | 20 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 14 | R-XUFM-X14 | 312W | 312W | 2 | Asymmetrical Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 75A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 4.4nF | 250μA | 450 ns | 2.4V @ 15V, 50A | 1100 ns | Trench Field Stop | Yes | 4.4nF @ 25V | 1700V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MG12300D-BA1MM | Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Chassis Mount | 2014 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 7 | Module | Chassis Mount | 284.999996g | -40°C~150°C TJ | 1.8kW | 1800W | Half Bridge | NPN | Dual | Standard | 450A | 1.2kV | 1.9V | 21.2nF | 2mA | 1.9V | 1.9V @ 15V, 300A (Typ) | No | 21.2nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FZ1500R33HE3C1NPSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Active | Module | Chassis Mount | -40°C~150°C TJ | 2400000W | Full Bridge | Standard | 5mA | 3.1V @ 15V, 1.5kA | Trench Field Stop | No | 280nF @ 25V | 3300V | 1500A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CM1000DU-34NF | Mitsubishi | 555.2600 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | 2003 | IGBTMOD™ | no | Obsolete | 1 (Unlimited) | 7 | Non-RoHS Compliant | 1kA | 15 | Module | Unknown | Chassis Mount | -40°C~150°C TJ | 1.7kV | UPPER | UNSPECIFIED | 7 | R-XUFM-X7 | Insulated Gate BIP Transistors | 3.9kW | 3900W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Standard | 1kA | 1.7kV | 2.8V | POWER CONTROL | SILICON | 220nF | 1mA | 750 ns | 2.8V @ 15V, 1000A | 1100 ns | No | 20V | 220nF @ 10V | 1700V | 1000A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT75A120T1G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 2012 | yes | Active | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | 1 | SP1 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 12 | Insulated Gate BIP Transistors | Not Qualified | 357W | 357W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 110A | 1.2kV | 2.1V | MOTOR CONTROL | SILICON | 5.34nF | 250μA | 335 ns | 2.1V @ 15V, 75A | 610 ns | Trench Field Stop | Yes | 20V | 5.34nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FMG2G75US60 | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 7PM-GA | Chassis Mount | -40°C~150°C TJ | 310W | Half Bridge | 7PM-GA | Standard | 250μA | 2.8V @ 15V, 75A | No | 7.056nF @ 30V | 600V | 75A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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A2C25S12M3 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | ACTIVE (Last Updated: 7 months ago) | Active | 1 (Unlimited) | 35 | RoHS Compliant | UL RECOGNIZED | Module | Chassis Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | A2C25S12 | NO | R-XUFM-X35 | 197W | 6 | Three Phase Inverter with Brake | N-CHANNEL | 197W | Three Phase Bridge Rectifier | MOTOR CONTROL | SILICON | 100μA | 125.2 ns | 2.45V @ 15V, 25A | 338 ns | Trench Field Stop | Yes | 20V | 1550pF @ 25V | 2.45 V | 1200V | 25A | 7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FS400R07A1E3BOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | 2006 | yes | Obsolete | 1 (Unlimited) | 13 | RoHS Compliant | Module | compliant | Surface Mount | -40°C~150°C TJ | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 25 | NO | R-XUFM-X13 | Not Qualified | 1250W | 6 | Three Phase Inverter | ISOLATED | N-CHANNEL | Standard | POWER CONTROL | SILICON | 1mA | 200 ns | 1.9V @ 15V, 400A | 580 ns | Yes | 26nF @ 25V | 650V | 500A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FP40R12KE3GBOSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | 2002 | no | Active | Not Applicable | 35 | EAR99 | RoHS Compliant | Contains Lead | 24 | Module | Chassis Mount | -40°C~125°C | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 35 | NO | R-XUFM-X35 | Not Qualified | 210W | 7 | Three Phase Inverter | ISOLATED | Not Halogen Free | N-CHANNEL | Standard | SILICON | 1mA | 135 ns | 2.3V @ 15V, 40A | 610 ns | Trench Field Stop | Yes | 2.5nF @ 25V | 1200V | 55A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT150DA120G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 5 | EAR99 | 150°C | -40°C | RoHS Compliant | 5 | AVALANCHE RATED | SP6 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 690W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 220A | 1.2kV | 1.2kV | POWER CONTROL | 10.7nF | 350μA | 335 ns | 2.1V @ 15V, 150A | 610 ns | Trench Field Stop | No | 10.7nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGF150SK120TG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount, Screw | 2006 | yes | Obsolete | 1 (Unlimited) | 12 | EAR99 | 150°C | -40°C | RoHS Compliant | 20 | SP4 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | R-XUFM-X12 | Insulated Gate BIP Transistors | Not Qualified | 961W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 200A | 1.2kV | 1.2kV | MOTOR CONTROL | 10.2nF | 350μA | 190 ns | 3.7V @ 15V, 150A | 390 ns | NPT | Yes | 10.2nF @ 25V | 3.7 V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGF250A60D3G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Chassis Mount, Screw | 2012 | Obsolete | 1 (Unlimited) | 7 | EAR99 | 150°C | -40°C | RoHS Compliant | 11 | D-3 Module | Chassis Mount | UPPER | UNSPECIFIED | 11 | R-XUFM-X7 | Insulated Gate BIP Transistors | 1.25kW | 1250W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 400A | 600V | 600V | MOTOR CONTROL | 13nF | 500μA | 235 ns | 2.45V @ 15V, 300A | 600 ns | NPT | No | 20V | 13nF @ 25V | 2.45 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-GB75NA60UF | Vishay Semiconductor Diodes Division | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Chassis Mount, Screw | 2016 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4 | SOT-227-4, miniBLOC | Chassis Mount | -40°C~150°C TJ | 447W | 447W | Single | Standard | 109A | 600V | 2V | 50μA | 2V @ 15V, 35A | NPT | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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APTGT100DU120TG | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 12 | EAR99 | RoHS Compliant | 20 | AVALANCHE RATED | SP4 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 12 | R-XUFM-X12 | Insulated Gate BIP Transistors | Not Qualified | 480W | 480W | 2 | Dual, Common Source | ISOLATED | N-CHANNEL | Dual | Standard | 140A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 7.2nF | 250μA | 340 ns | 2.1V @ 15V, 100A | 610 ns | Trench Field Stop | Yes | 7.2nF @ 25V | 2.1 V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||
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BSM35GP120 | Infineon | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Screw | 2001 | 24 | EAR99 | 125°C | -40°C | RoHS Compliant | 2 | Module | unknown | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 24 | Insulated Gate BIP Transistors | Not Qualified | 7 | COMPLEX | ISOLATED | N-CHANNEL | 230W | 45A | 1.2kV | 1.2kV | 2.4V | 105 ns | 390 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NXH100B120H3Q0STG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 37 Weeks | Tray | yes | Active | 1 (Unlimited) | ROHS3 Compliant | Module | Chassis Mount | -40°C~150°C TJ | 186W | 2 Independent | Standard | 200μA | 2.3V @ 15V, 50A | Trench Field Stop | No | 9.075nF @ 20V | 1200V | 50A |
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BSM200GB60DLC Infineon Technologies
BSM200GB60DLC datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available at HK JDW
Price: 0.0000
RFQ -
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SEMIX653GAR176HDS Semikron
SEMIX653GAR176HDS datasheet pdf and Transistors - IGBTs - Modules product details from Semikron stock available at Utmel
Price: 0.0000
RFQ -
VS-GT200TP065N Vishay Semiconductor Diodes Division
Trans IGBT Module N-CH 650V 221A 7-Pin INT-A-PAK
Price: 0.0000
RFQ -
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FF600R12IE4VBOSA1 Infineon Technologies
FF600R12IE4VBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
Price: 0.0000
RFQ -
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FS50R07W1E3B11ABOMA1 Infineon Technologies
Trans IGBT Module N-CH 650V 70A 18-pin EASY1B-3
Price: 0.0000
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FS200R12PT4 Infineon
INFINEON FS200R12PT4 IGBT Array & Module Transistor, N Channel, 200 A, 1.75 V, 1 kW, 1.2 kV, Module
Price: 0.0000
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F3L300R12ME4_B23 Infineon
F3L300R12ME4_B23 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon stock available at HK JDW
Price: 0.0000
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APTGT50DH170TG Microsemi Corporation
APTGT50DH170TG datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available at Utmel
Price: 0.0000
RFQ -
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FS400R07A1E3BOSA1 Infineon Technologies
Trans IGBT Module N-CH 650V 500A Automotive 23-Pin
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FP40R12KE3GBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at HK JDW
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VS-GB75NA60UF Vishay Semiconductor Diodes Division
Trans IGBT Module N-CH 600V 109A 4-Pin SOT-227
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BSM35GP120 Infineon
BSM35GP120 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon stock available at HK JDW
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