Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BQ4016YMC-70 | Texas Instruments | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | no | Obsolete | 1 (Unlimited) | 36 | 3A991.B.2.A | 5V | ROHS3 Compliant | Contains Lead | No | 36 | 36-DIP Module (0.610, 15.49mm) | 8 Mb | 70GHz | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 115mA | 8542.32.00.41 | 1 | 115mA | DUAL | 5V | BQ4016 | 2.54mm | SRAMs | 5V | 8Mb 1M x 8 | Non-Volatile | 4.5V~5.5V | 1MX8 | 8 | 8b | 0.005A | 70 ns | 8b | NVSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H128M8SH-25E IT:M | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2014 | yes | Active | 3 (168 Hours) | 60 | EAR99 | 1 | 10mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-TFBGA | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | MT47H128M8 | 60 | YES | 0.8mm | R-PBGA-B60 | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 400ps | 1Gb 128M x 8 | Volatile | 1.7V~1.9V | 128MX8 | 8 | 1073741824 bit | 400MHz | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "VS2FL008A0LMAI001") |
VS2FL008A0LMAI001 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7143LA20G | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Bulk | 2013 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 29.46mm | RoHS Compliant | Contains Lead | No | 68 | Parallel | 5.5V | 4.5V | 32 kb | 29.46mm | 3.68mm | CMOS | 1 | 280mA | e0 | Tin/Lead (Sn/Pb) | PERPENDICULAR | PIN/PEG | 240 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 20 ns | 4kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 16b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F2G08ABBEAH4-AITX:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 63-VFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 2Gb 256M x 8 | Non-Volatile | 1.7V~1.95V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AT24C01C-STPD-TVAO | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 2 (1 Year) | 8 | 4.4mm | SOT-23-5 Thin, TSOT-23-5 | compliant | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | DUAL | 5V | AT24C01 | YES | 0.65mm | R-PDSO-G8 | 4.5V | 5.5V | 900ns | AEC-Q100; TS 16949 | 1Kb 128 x 8 | Non-Volatile | 2.5V~5.5V | 128X8 | 8 | 1024 bit | SERIAL | 1MHz | 1.5ms | I2C | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB161E-MHD2B-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Cut Tape (CT) | 1997 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-UDFN Exposed Pad | Surface Mount | -40°C~85°C TC | AT45DB161 | 16Mb 512Bytes x 4096 pages | Non-Volatile | 2.5V~3.6V | 85MHz | FLASH | SPI | 8μs, 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MTFC8GLDDQ-4M IT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | e•MMC™ | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 100-LBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 64Gb 8G x 8 | Non-Volatile | 1.65V~3.6V | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16320B-7TLI | ISSI, Integrated Silicon Solution Inc | 5.3230 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | 3.3V | 1 | 22.22mm | RoHS Compliant | Lead Free | Tin | No | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | No SVHC | 512 Mb | 1mm | 10.16mm | Surface Mount | -40°C~85°C TA | SDRAM | 150mA | 1 | 150mA | e3 | DUAL | 260 | 3.3V | 10 | 54 | 0.8mm | 3V | 3.6V | 3-STATE | 5.4ns | 512Mb 32M x 16 | Volatile | 15b | 3V~3.6V | 32MX16 | 16b | 143MHz | 0.004A | COMMON | 64MB | 8192 | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL256P90FFCR20 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Surface Mount | Tray | 2003 | GL-P | Active | 3 (168 Hours) | 64 | 3A991.B.1.A | 3.3V | 13mm | ROHS3 Compliant | No | 64 | 64-LBGA | 256 Mb | Surface Mount | 0°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | 110mA | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3.3V | 40 | 1mm | 3V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 3V~3.6V | 256MX1 | 1 | Asynchronous | 8b | 0.000005A | 90 ns | 8 | 3V | YES | YES | YES | 256 | 8/16words | YES | YES | FLASH | Parallel | 90ns | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7140LA100J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 8 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 110mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 100 ns | 1kB | RAM, SDR, SRAM | 10b | 1KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F32G08CBADBWPR:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT29LV020-10JI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 2 (1 Year) | Non-RoHS Compliant | 32-LCC (J-Lead) | Surface Mount | -40°C~85°C TC | FLASH | AT29LV020 | 32-PLCC (13.97x11.43) | 100ns | 2Mb 256K x 8 | Non-Volatile | 3V~3.6V | FLASH | Parallel | 20ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SM671PXD-ADST | Silicon Motion, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7015S17J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 72 kb | 24mm | 3.63mm | CMOS | 4.57mm | 1 | 310mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 17 ns | 9kB | RAM, SDR, SRAM | 26b | 8KX9 | Asynchronous | 0.015A | 9b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W25Q32FVSSIP | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2016 | SpiFlash® | Obsolete | 3 (168 Hours) | 8 | 5.23mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 5.23mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | 3V | YES | 1.27mm | S-PDSO-G8 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 32Mb 4M x 8 | Non-Volatile | 0.02mA | 2.7V~3.6V | 32MX1 | 1 | 33554432 bit | 104MHz | 0.00002A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI - Quad I/O, QPI | 50μs, 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46V64M8BN-6:F | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2009 | Obsolete | 5 (48 Hours) | 60 | EAR99 | 2.5V | 1 | 12.5mm | Non-RoHS Compliant | Lead Free | No | 60 | AUTO/SELF REFRESH | 60-TFBGA | 512 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | 1.2mm | 8542.32.00.28 | 1 | 175mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 2.5V | 30 | MT46V64M8 | 60 | 1mm | 2.3V | 2.7V | 3-STATE | 700ps | 512Mb 64M x 8 | Volatile | 15b | 2.3V~2.7V | 64MX8 | 8 | 8b | 167MHz | 0.005A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
00002331896 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | FBGA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29PL127J60TAW130 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tray | PL-J | Obsolete | 3 (168 Hours) | 56 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | TOP AND BOTTOM BOOT BLOCK | 56-TFSOP (0.724, 18.40mm Width) | 14mm | Surface Mount | -25°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 240 | 3V | 30 | YES | 0.5mm | R-PDSO-G56 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 128Mb 8M x 16 | Non-Volatile | 0.07mA | 2.7V~3.6V | 8MX16 | 16 | 134217728 bit | 0.000005A | 60 ns | 3V | YES | YES | YES | 16254 | 8words | YES | YES | FLASH | Parallel | 60ns | 4K32K | BOTTOM/TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC512-E/MF | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 2010 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 6mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-VDFN Exposed Pad | 2-Wire, I2C, Serial | 512 kb | 5mm | Surface Mount | -40°C~125°C TA | CMOS | 1mm | 1 | 5mA | e3 | DUAL | 260 | 4.5V | 40 | 24LC512 | 8 | 1.27mm | 2.5V | 3/5V | 5.5V | 900ns | 512Kb 64K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C32M16MSA-6BIN | Alliance Memory, Inc. | 7.0644 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | Active | 3 (168 Hours) | 54 | 1 | 8mm | ROHS3 Compliant | AUTO/SELF REFRESH | 54-VFBGA | 8mm | Surface Mount | -40°C~85°C TJ | SDRAM - Mobile SDRAM | SYNCHRONOUS | 1mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | S-PBGA-B54 | 1.7V | 1.95V | 5.5ns | 512Mb 32M x 16 | Volatile | 1.7V~1.95V | 32MX16 | 16 | 536870912 bit | 166MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25LC256-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Through Hole | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 9.4mm | ROHS3 Compliant | Lead Free | No | 8 | 8-DIP (0.300, 7.62mm) | SPI, Serial | No SVHC | 256 kb | 3.3mm | 6.35mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 6mA | e3 | Matte Tin (Sn) | DUAL | 5V | 25LC256 | 8 | 2.54mm | 2.5V | 2/5V | 5.5V | 50 ns | 256Kb 32K x 8 | Non-Volatile | 2.5V~5.5V | 10MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7134LA20JG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 52-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7134 | 52-PLCC (19.13x19.13) | 20ns | 32Kb 4K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3577S85PFGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2009 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | FLOW THROUGH ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 87MHz | 14mm | 1.4mm | CMOS | 1 | 190mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 8.5 ns | 87MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.035A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
DS28E11P+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RMLV0408EGSA-4S2#AA0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2014 | yes | Discontinued | 3 (168 Hours) | 32 | ROHS3 Compliant | 32-TFSOP (0.465, 11.80mm Width) | Surface Mount | -40°C~85°C TA | CMOS | ASYNCHRONOUS | 1 | DUAL | 3V | RMLV0408 | 32 | YES | R-PDSO-G32 | 2.7V | 3.6V | 4Mb 512K x 8 | Volatile | 2.7V~3.6V | 512KX8 | 8 | 4194304 bit | 45 ns | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1LV5256ESP-5SI#S0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Cut Tape (CT) | 2011 | yes | Discontinued | 1 (Unlimited) | 28 | EAR99 | 3V | 1 | ROHS3 Compliant | No | 28 | 28-SOIC (0.330, 8.40mm Width) | 256 kb | Surface Mount | -40°C~85°C TA | CMOS | 2.4mm | 1 | DUAL | 3V | R1LV5256E | 28 | YES | 2.7V | 3.6V | 3-STATE | 256Kb 32K x 8 | Volatile | 15b | 0.025mA | 2.7V~3.6V | 32KX8 | 8 | 55 ns | COMMON | 2V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28C64-20PI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1999 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-DIP (0.600, 15.24mm) | Through Hole | -40°C~85°C TC | EEPROM | AT28C64 | 28-PDIP | 200ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 1ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424L12PH8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V424 | 44-TSOP II | 12ns | 4Mb 512K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416VS15YG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Rail/Tube | 2005 | yes | 3 (168 Hours) | 44 | 70°C | 0°C | 3.3V | 1 | 28.575mm | RoHS Compliant | 44 | Parallel | 3.6V | unknown | 3V | 4 Mb | CMOS | 3.683mm | 1 | 170mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 3.3V | 30 | 44 | COMMERCIAL | SRAMs | Not Qualified | 3-STATE | 15 ns | RAM, SRAM - Asynchronous | 18b | 16 | Asynchronous | 0.02A | 16b | COMMON | 3V |
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BQ4016YMC-70 Texas Instruments
5V V Through Hole Memory IC BQ4016 8 Mb kb 115mA mA 8b b
Price: 0.0000
RFQ -
MT47H128M8SH-25E IT:M Micron Technology Inc.
1.8V V 60 Pin Memory IC MT47H128M8 10mm mm
Price: 0.0000
RFQ -
-
7143LA20G Integrated Device Technology (IDT)
5V V Through Hole 68 Pin Memory IC 32 kb kb 29.46mm mm 280mA mA 16b b
Price: 0.0000
RFQ -
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AT24C01C-STPD-TVAO Microchip Technology
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series AT24C01 4.4mm mm
Price: 0.0000
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IS42S16320B-7TLI ISSI, Integrated Silicon Solution Inc
Surface Mount 54 Pin Memory IC 512 Mb kb 22.22mm mm 150mA mA
Price: 5.3230
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S29GL256P90FFCR20 Cypress Semiconductor Corp
Surface Mount GL-P Memory IC GL-P Series 256 Mb kb 13mm mm 110mA mA
Price: 0.0000
RFQ -
7140LA100J Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 8 kb kb 19mm mm 110mA mA 8b b
Price: 0.0000
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7015S17J Integrated Device Technology (IDT)
5V V Surface Mount 68 Pin Memory IC 72 kb kb 24mm mm 310mA mA 9b b
Price: 0.0000
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W25Q32FVSSIP Winbond Electronics
3/3.3V V SpiFlash® Memory IC SpiFlash® Series 5.23mm mm
Price: 0.0000
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MT46V64M8BN-6:F Micron Technology Inc.
Surface Mount 60 Pin Memory IC MT46V64M8 512 Mb kb 12.5mm mm 175mA mA
Price: 0.0000
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S29PL127J60TAW130 Cypress Semiconductor Corp
3/3.3V V PL-J Memory IC PL-J Series 18.4mm mm
Price: 0.0000
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24LC512-E/MF Microchip Technology
3/5V V Surface Mount 8 Pin Memory IC 24LC512 512 kb kb 6mm mm 5mA mA
Price: 0.0000
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25LC256-I/P Microchip Technology
2/5V V Through Hole 8 Pin Memory IC 25LC256 256 kb kb 9.4mm mm 6mA mA
Price: 0.0000
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71V3577S85PFGI Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 4.5 Mb kb 20mm mm 190mA mA 36b b
Price: 0.0000
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R1LV5256ESP-5SI#S0 Renesas Electronics America
28 Pin Memory IC R1LV5256E 256 kb kb
Price: 0.0000
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IDT71V416VS15YG Integrated Device Technology (IDT)
Surface Mount 44 Pin Memory IC 4 Mb kb 28.575mm mm 170mA mA 16b b
Price: 0.0000
RFQ
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