Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Voltage | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Serial Bus Type | I2C Control Byte | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
24FC02T-E/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Active | 1 (Unlimited) | 8 | 4.4mm | 8-TSSOP (0.173, 4.40mm Width) | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | DUAL | 2.5V | YES | 0.65mm | R-PDSO-G8 | 1.7V | 5.5V | 450ns | AEC-Q100; TS 16949 | 2Kb 256 x 8 | Non-Volatile | 1.7V~5.5V | 256X8 | 8 | 2048 bit | SERIAL | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
IDT71V65602S100PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 85°C | -40°C | RoHS Compliant | LQFP | Parallel | 100MHz | RAM, SRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT49F512-90TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1999 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~85°C TC | AT49F512 | 90ns | 512Kb 64K x 8 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 50μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
NAND512W3A2SZAXE | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tray | 2012 | Obsolete | 3 (168 Hours) | 63 | 3V | 11mm | ROHS3 Compliant | No | 63 | 63-TFBGA | 512 Mb | Surface Mount | -40°C~85°C TA | 3.3V | FLASH - NAND | 1.05mm | 1 | BOTTOM | 3V | NAND512 | YES | 0.8mm | 3.3V | 512Mb 64M x 8 | Non-Volatile | 26b | 0.02mA | 2.7V~3.6V | 64MX8 | 8 | 0.00005A | 35 ns | NO | NO | YES | 4K | 528B | YES | FLASH | Parallel | 50ns | 16K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT28EW128ABA1HPN-0SIT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | Active | 3 (168 Hours) | 56 | 3A991.B.1.A | 9mm | ROHS3 Compliant | 56-VFBGA | 7mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1mm | 8542.32.00.51 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 3V | 30 | YES | 0.8mm | R-PBGA-B56 | 2.7V | 3.6V | 95ns | 128Mb 16M x 8 8M x 16 | Non-Volatile | 2.7V~3.6V | 8MX16 | 16 | 134217728 bit | 8 | 3V | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT29F32G08ABCDBJ4-6ITR:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 5 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 132-VBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | 166MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAT93C66VI-G | ON Semiconductor | 0.1720 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Surface Mount | Tube | 2004 | yes | Obsolete | 1 (Unlimited) | 8 | SMD/SMT | 85°C | -40°C | 5V | 4.9mm | ROHS3 Compliant | Lead Free | Gold | No | 8 | SOIC | Serial | 5.5V | No SVHC | 1.8V | 4 kb | 2MHz | 3.9mm | CMOS | 1.75mm | 1 | 1mA | e4 | DUAL | GULL WING | 260 | 5V | 8 | INDUSTRIAL | 1.27mm | 250 ns | 512B | EEPROM | 256X16 | 16 | 0.00001A | 8 | 100 | 1000000 Write/Erase Cycles | SOFTWARE | MICROWIRE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FL512SDPMFVG11 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | 2016 | FL-S | Active | 3 (168 Hours) | 16 | 10.3mm | ROHS3 Compliant | IT ALSO HAVE MEMORY WIDTH X1 | 16-SOIC (0.295, 7.50mm Width) | SPI, Serial | 7.5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 8542.32.00.51 | 1 | DUAL | 3V | YES | 1.27mm | R-PDSO-G16 | 2.7V | Not Qualified | 3/3.3V | 3.6V | 512Mb 64M x 8 | Non-Volatile | 0.075mA | 2.7V~3.6V | 64MX8 | 8 | 512753664 bit | 66MHz | 0.0003A | 1 | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | SPI | FLASH | SPI - Quad I/O | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LPS102418A-200TQLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 2 (1 Year) | 85°C | -40°C | RoHS Compliant | 100 | 100-LQFP | Parallel | 3.465V | 3.135V | 200MHz | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 200MHz | 100-TQFP (14x20) | 3.1ns | 18Mb 1M x 18 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT46V64M8P-5B:J | Micron Technology Inc. | 5.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Surface Mount | Tray | 2011 | Active | 3 (168 Hours) | 66 | EAR99 | 2.5V | 1 | 22.22mm | ROHS3 Compliant | Lead Free | Tin | No | 66 | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | 512 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | 1.2mm | 8542.32.00.28 | 1 | 230mA | 400MHz | e3 | DUAL | 260 | 2.6V | 30 | MT46V64M8 | 66 | 0.65mm | 2.6V | 2.7V | 3-STATE | 700ps | 512Mb 64M x 8 | Volatile | 15b | 2.5V~2.7V | 64MX8 | 8 | 8b | 200MHz | 0.005A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
7006S55JI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 68 | EAR99 | 85°C | -40°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 24mm | 3.63mm | CMOS | 1 | 300mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 68 | INDUSTRIAL | SRAMs | 5V | 3-STATE | 55 ns | 16kB | RAM, SDR, SRAM | 28b | 16KX8 | Asynchronous | 0.03A | 8b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
SST25VF080B-80-4I-SAE-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | SST25 | yes | Obsolete | 2 (1 Year) | 8 | 3A991.B.1.A | 3.3V | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 8 Mb | Surface Mount | -40°C~85°C TA | CMOS | 20mA | e3 | Matte Tin (Sn) | DUAL | 260 | 40 | SST25VF080B | YES | 1.27mm | 6 ns | 8Mb 1M x 8 | Non-Volatile | 1b | 2.7V~3.6V | 8 | Synchronous | 8b | 80MHz | 0.00002A | 8b | 100 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | SPI | FLASH | SPI | 10μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT29F2G08ABAEAWP-IT:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Tray | 2010 | yes | Active | 3 (168 Hours) | 48 | 3.3V | 18.4mm | ROHS3 Compliant | Tin | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 2 Gb | 1.2mm | Surface Mount | -40°C~85°C TA | FLASH - NAND | 1 | 25mA | e3 | DUAL | 260 | 3.3V | 30 | MT29F2G08 | 0.5mm | 2.7V | 3.6V | 85°C | 2Gb 256M x 8 | Non-Volatile | 29b | 2.7V~3.6V | 256MX8 | 8 | Asynchronous | 0.0001A | 25 ns | 8b | 2.7V | NO | NO | YES | 2K | 2kB | YES | FLASH | Parallel | 128K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43LD16640C-25BLI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tray | Active | 3 (168 Hours) | 134 | EAR99 | 1 | 11.5mm | ROHS3 Compliant | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 134-TFBGA | 10mm | Surface Mount | -40°C~85°C TC | SDRAM - Mobile LPDDR2-S4 | SYNCHRONOUS | 1.1mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NOT SPECIFIED | 1.2V | NOT SPECIFIED | YES | 0.65mm | R-PBGA-B134 | 1.14V | 1.3V | 1Gb 64M x 16 | Volatile | 1.14V~1.95V | 64MX16 | 16 | 1073741824 bit | 400MHz | MULTI BANK PAGE BURST | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS43DR16320E-3DBLI | ISSI, Integrated Silicon Solution Inc | 4.1793 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 84 | EAR99 | 1 | 10.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 84-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B84 | 1.7V | 1.9V | 450ns | 512Mb 32M x 16 | Volatile | 1.7V~1.9V | 32MX16 | 16 | 536870912 bit | 333MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1041BV33-20ZC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | no | Obsolete | 3 (168 Hours) | 44 | 3A991.B.2.A | 18.41mm | Non-RoHS Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1.2mm | 8542.32.00.41 | 1 | e0 | TIN LEAD | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 44 | YES | 0.8mm | R-PDSO-G44 | 3V | Not Qualified | 3.6V | 4Mb 256K x 16 | Volatile | 3V~3.6V | 256KX16 | 16 | 4194304 bit | 20 ns | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
IDT71V124SA20PH8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | 70°C | 0°C | 20.95mm | Non-RoHS Compliant | SOIC | Parallel | not_compliant | 10.16mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | GULL WING | 225 | 3.3V | 30 | 32 | COMMERCIAL | YES | 1.27mm | R-PDSO-G32 | 3.15V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.095mA | 128KX8 | 8 | 1048576 bit | 0.01A | 20 ns | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AS7C3256A-15TCN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2001 | Active | 3 (168 Hours) | 70°C | 0°C | 3.3V | 1 | ROHS3 Compliant | Lead Free | No | 28 | 28-TSSOP (0.465, 11.80mm Width) | Parallel | 3.6V | 3V | 256 kb | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 28-TSOP I | 15ns | 256Kb 32K x 8 | Volatile | 15b | 3V~3.6V | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1518JV18-312BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | 70°C | 0°C | Non-RoHS Compliant | 165 | 165-LBGA | Parallel | 312MHz | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II | CY7C1518 | 165-FBGA (13x15) | 72Mb 4M x 18 | Volatile | 1.7V~1.9V | 312MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT29BV040A-25TC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | 70°C | 0°C | Non-RoHS Compliant | Contains Lead | 32-TFSOP (0.724, 18.40mm Width) | Parallel | 3.6V | 2.7V | 250GHz | Surface Mount | 0°C~70°C TC | FLASH | AT29BV040 | 32-TSOP | 250ns | 4Mb 512K x 8 | Non-Volatile | 2.7V~3.6V | 8b | FLASH | Parallel | 20ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
SST26VF064BAT-104I/SM | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2016 | SST26 SQI® | Active | 1 (Unlimited) | 8 | 3V | 5.26mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.209, 5.30mm Width) | SPI, Serial | 64 Mb | 5.25mm | Surface Mount | -40°C~85°C TA | CMOS | 2.03mm | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 3V | 40 | SST26VF064 | YES | 1.27mm | 2.7V | 3.6V | TS 16949 | 64Mb 8M x 8 | Non-Volatile | 2.7V~3.6V | 64MX1 | 1 | 104MHz | 3V | 256B | FLASH | SPI - Quad I/O | 1.5ms | BOTTOM/TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
70V25S15PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 3.6V | 3V | 128 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 215mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 15 ns | 16kB | RAM, SDR, SRAM | 26b | 8KX16 | Asynchronous | 0.005A | 16b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
MT29F256G08AUAAAC5-Z:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Bulk | Active | 3 (168 Hours) | 70°C | 0°C | 3.3V | ROHS3 Compliant | 52 | 52-VLGA | Parallel | Surface Mount | 0°C~70°C TA | FLASH - NAND | MT29F256G08 | 52-VLGA (18x14) | 256Gb 32G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
S-24C08DI-I8T1U5 | ABLIC U.S.A. Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 8 | 2.23mm | RoHS Compliant | IT ALSO OPERATES AT 0.4 MHZ AT 1.7 TO 5.5 V SUPPLY VOLTAGE | 8-SMD, Flat Lead | 1.97mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.5mm | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-F8 | 2.5V | 5.5V | 500ns | 8Kb 1K x 8 | Non-Volatile | 1.7V~5.5V | 1KX8 | 8 | 8192 bit | SERIAL | 1MHz | 5ms | I2C | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS61LPS51236A-200TQI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | no | Obsolete | 2 (1 Year) | 100 | 3A991.B.2.A | 3.3V | 4 | 20mm | Non-RoHS Compliant | No | 100 | PIPELINED ARCHITECTURE | 100-LQFP | 18 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 475mA | e0 | Tin/Lead (Sn/Pb) | QUAD | 240 | 3.3V | 10 | 100 | 0.65mm | 3.135V | 3-STATE | 3.1ns | 18Mb 512K x 36 | Volatile | 19b | 3.135V~3.465V | 512KX36 | 36 | Synchronous | 200MHz | 0.125A | 36b | COMMON | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
24C01CT-E/MC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 8 | 5V | 3mm | ROHS3 Compliant | Tin | No | 8 | 8-VFDFN Exposed Pad | I2C, Serial | 1 kb | 2mm | Surface Mount | -40°C~125°C TA | CMOS | 1mm | 1 | 3mA | e3 | DUAL | 260 | 5V | 40 | 24C01C | 8 | 0.5mm | 5V | 3500ns | 1Kb 128 x 8 | Non-Volatile | 4.5V~5.5V | 8 | 100kHz | 0.00005A | 200 | 1000000 Write/Erase Cycles | 1.5ms | I2C | 1010DDDR | EEPROM | I2C | 1.5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
AT29C040A-10PC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 32-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TC | FLASH | AT29C040 | 32-PDIP | 100ns | 4Mb 512K x 8 | Non-Volatile | 4.5V~5.5V | FLASH | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
7140LA100CB | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tube | Active | 1 (Unlimited) | Non-RoHS Compliant | 48-DIP (0.600, 15.24mm) | Through Hole | -55°C~125°C TA | SRAM - Dual Port, Asynchronous | IDT7140 | 48-SIDE BRAZED | 100ns | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
M29DW323DT70ZE6F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | M29DW323 | 48-TFBGA (6x8) | 70ns | 32Mb 4M x 8 2M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() |
7140LA20PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 64-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7140 | 64-TQFP (14x14) | 20ns | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns |
-
-
-
-
-
-
-
CAT93C66VI-G ON Semiconductor
Surface Mount 8 Pin Memory IC 4 kb kb 4.9mm mm 1mA mA
Price: 0.1720
RFQ -
S25FL512SDPMFVG11 Cypress Semiconductor Corp
3/3.3V V FL-S Memory IC FL-S Series 10.3mm mm
Price: 0.0000
RFQ -
-
MT46V64M8P-5B:J Micron Technology Inc.
2.6V V Surface Mount 66 Pin Memory IC MT46V64M8 512 Mb kb 22.22mm mm 230mA mA
Price: 5.0000
RFQ -
7006S55JI8 Integrated Device Technology (IDT)
5V V Surface Mount 68 Pin Memory IC 128 kb kb 24mm mm 300mA mA 8b b
Price: 0.0000
RFQ -
SST25VF080B-80-4I-SAE-T Microchip Technology
SST25 Memory IC SST25 Series SST25VF080B 8 Mb kb 20mA mA 8b b
Price: 0.0000
RFQ -
MT29F2G08ABAEAWP-IT:E Micron Technology Inc.
Surface Mount Memory IC MT29F2G08 2 Gb kb 18.4mm mm 25mA mA 8b b
Price: 0.0000
RFQ -
-
-
-
IDT71V124SA20PH8 Integrated Device Technology (IDT)
3.3V V 32 Pin Memory IC 20.95mm mm
Price: 0.0000
RFQ -
-
-
-
SST26VF064BAT-104I/SM Microchip Technology
SST26 SQI® Memory IC SST26 SQI® Series SST26VF064 64 Mb kb 5.26mm mm
Price: 0.0000
RFQ -
70V25S15PF8 Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 128 kb kb 14mm mm 215mA mA 16b b
Price: 0.0000
RFQ -
-
-
IS61LPS51236A-200TQI ISSI, Integrated Silicon Solution Inc
Surface Mount 100 Pin Memory IC 18 Mb kb 20mm mm 475mA mA 36b b
Price: 0.0000
RFQ -
24C01CT-E/MC Microchip Technology
5V V Surface Mount 8 Pin Memory IC 24C01C 1 kb kb 3mm mm 3mA mA
Price: 0.0000
RFQ -
-
-
-






.png)













Need Help?

