Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GD5F1GQ4UEYIGY | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NAND | 1Gb 128M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 700μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS64WV6416BLL-15TA3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | no | Obsolete | 3 (168 Hours) | 44 | 3.3V | 1 | Non-RoHS Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | 1 Mb | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 1 | 50mA | e0 | Tin/Lead (Sn/Pb) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | 44 | YES | 0.8mm | 2.5V | Not Qualified | 3.6V | 3-STATE | 1Mb 64K x 16 | Volatile | 16b | 2.5V~3.6V | 16 | Asynchronous | 0.075A | 16b | COMMON | SRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42SM32800K-6BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 90 | 90-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | 5.5ns | 256Mb 8M x 32 | Volatile | 2.7V~3.6V | 32b | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "25AA640/WF") |
25AA640/WF | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | 0°C~70°C TA | EEPROM | 25AA640 | Die | 64Kb 8K x 8 | Non-Volatile | 1.8V~5.5V | 1MHz | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
AK93C55BL | AKM Semiconductor Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | Obsolete | 1 (Unlimited) | Surface Mount | -40°C~85°C TA | EEPROM | 8-SON | 2Kb 128 x 16 | Non-Volatile | 1.8V~5.5V | EEPROM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB321B-CC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 44-CBGA | Surface Mount | 0°C~70°C TC | FLASH | AT45DB321 | 44-CBGA (6x12) | 32Mb 528Bytes x 8192 pages | Non-Volatile | 2.7V~3.6V | 20MHz | FLASH | SPI | 14ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
709289L12PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Synchronous | 12ns | 1Mb 64K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MX29LV800CBXBI-70G | Macronix | 4.0261 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | 2012 | yes | Active | 48 | 3A991.B.1.A | 8mm | Non-RoHS Compliant | 6mm | CMOS | ASYNCHRONOUS | 1.3mm | 8542.32.00.51 | 1 | NOR TYPE | e1 | TIN SILVER COPPER | BOTTOM | BALL | 260 | 3V | 40 | 48 | INDUSTRIAL | YES | 0.8mm | R-PBGA-B48 | 2.7V | 85°C | -40°C | Flash Memories | Not Qualified | 3/3.3V | 3.6V | 0.03mA | 8MX16 | 16 | 134217728 bit | FLASH | PARALLEL | 0.000005A | 70 ns | 8 | 3V | YES | YES | YES | 12115 | YES | YES | 16K8K32K64K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61WV5128EDBLL-10BLI | ISSI, Integrated Silicon Solution Inc | 3.2519 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 36 | 1 | 8mm | ROHS3 Compliant | 36 | 36-TFBGA | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 35mA | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | 36 | YES | 0.75mm | 2.4V | 3.6V | 4Mb 512K x 8 | Volatile | 19b | 2.4V~3.6V | 8 | Asynchronous | 8b | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1EX24002ATAS0I#S0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | Lead Free | 8 | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | e4 | NICKEL PALLADIUM GOLD | DUAL | 3.3V | R1EX24002 | 8 | YES | 0.65mm | Not Qualified | 2/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 0.0025mA | 1.8V~5.5V | 8 | 400kHz | 0.000002A | 100 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9099L12PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V9099 | 12ns | 1Mb 128K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S34ML04G200BHV003 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 63 | 11mm | RoHS Compliant | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | INDUSTRIAL | YES | 0.8mm | R-PBGA-B63 | 2.7V | 105°C | -40°C | 3.6V | 512MX8 | 8 | 4294967296 bit | FLASH | PARALLEL | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL256S10FAIV10 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2016 | GL-S | Active | 3 (168 Hours) | 64 | 13mm | Non-RoHS Compliant | 64 | 64-LBGA | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 1 | BOTTOM | 3V | YES | 1mm | 2.7V | 3.6V | 100ns | 256Mb 16M x 16 | Non-Volatile | 0.08mA | 1.65V~3.6V | 16MX16 | 16 | 268435456 bit | 0.0001A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 3V | YES | YES | YES | 256 | 16words | YES | YES | FLASH | Parallel | 60ns | 64K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25LD20CEIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-XFDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2Mb 256K x 8 | Non-Volatile | 1.65V~2V | 50MHz | FLASH | SPI - Dual I/O | 97μs, 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25WD20CTIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 2Mb 256K x 8 | Non-Volatile | 1.65V~3.6V | FLASH | SPI - Quad I/O | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25LD80CSIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tube | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 8Mb 1M x 8 | Non-Volatile | 1.65V~2V | 50MHz | FLASH | SPI - Dual I/O | 60μs, 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V67803S133PFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V67803 | 4.2ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7140SA25JI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 52-LCC (J-Lead) | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 8Kb 1K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W988D2FBJX6I TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 90-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPSDR | 5.4ns | 256Mb 8M x 32 | Volatile | 1.7V~1.95V | 166MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PCF8598C-2T/02,112 | NXP USA Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2003 | Obsolete | 1 (Unlimited) | 8 | 7.55mm | ROHS3 Compliant | 8-SOIC (0.295, 7.50mm Width) | 7.5mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 2.65mm | 8542.32.00.71 | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3.3V | 30 | PCF8598 | 8 | YES | 1.27mm | R-PDSO-G8 | 2.5V | Not Qualified | 3/5V | 6V | 8Kb 1K x 8 | Non-Volatile | 0.002mA | 2.5V~6.0V | 1KX8 | 8 | 8192 bit | SERIAL | 100kHz | 0.00001A | 10 | 1000000 Write/Erase Cycles | HARDWARE | 10ms | I2C | 1010DMMR | EEPROM | I2C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL01GT13TFNV10 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | GL-T | Active | 3 (168 Hours) | 56 | 18.4mm | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | 14mm | Surface Mount | -40°C~125°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | DUAL | 3V | YES | 0.5mm | R-PDSO-G56 | 2.7V | 3.6V | 130ns | 1Gb 128M x 8 | Non-Volatile | 1.65V~3.6V | 64MX16 | 16 | 1073741824 bit | 2.7V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53D4DBSB-DC | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Box | Discontinued | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS42RM32800K-6BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 90 | 90-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile | 5.5ns | 256Mb 8M x 32 | Volatile | 2.3V~3V | 32b | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S34ML08G201BHB003 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 63 | 11mm | RoHS Compliant | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 3V | INDUSTRIAL | YES | 0.8mm | R-PBGA-B63 | 2.7V | 105°C | -40°C | 3.6V | AEC-Q100 | 1GX8 | 8 | 8589934592 bit | FLASH | PARALLEL | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70T3589S200BC8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 2.5V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 2.6V | 2.4V | 2.3 Mb | 200MHz | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 525mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 10 ns | RAM, SRAM | 32b | 64KX36 | Synchronous | 0.015A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V3556SA166BGGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2006 | yes | Active | 3 (168 Hours) | 119 | 85°C | -40°C | 3.3V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 166MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 360mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 119 | INDUSTRIAL | SRAMs | 3-STATE | 3.5 ns | 166MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.045A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61LV6416-10T-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | no | Obsolete | 2 (1 Year) | 44 | 3.3V | 1 | Non-RoHS Compliant | 44 | 44-TSOP (0.400, 10.16mm Width) | 1 Mb | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1 | 120mA | e0 | TIN LEAD | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 44 | 0.8mm | Not Qualified | 3.63V | 3-STATE | 1Mb 64K x 16 | Volatile | 16b | 3.135V~3.6V | 16 | Asynchronous | 16b | YES | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61WV6416DBLL-10BLI | ISSI, Integrated Silicon Solution Inc | 0.4519 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 48 | 1 | 8mm | ROHS3 Compliant | 48 | 48-TFBGA | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 55mA | BOTTOM | 3V | 48 | YES | 0.75mm | 2.4V | Not Qualified | 2.5/3.3V | 3.6V | 3-STATE | 1Mb 64K x 16 | Volatile | 16b | 2.4V~3.6V | 16 | Asynchronous | 0.000055A | 16b | COMMON | 2V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CP7283AT | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V67602S166BGG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V67602 | 119-PBGA (14x22) | 3.5ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 166MHz | SRAM | Parallel |
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IS64WV6416BLL-15TA3 ISSI, Integrated Silicon Solution Inc
44 Pin Memory IC 1 Mb kb 50mA mA 16b b
Price: 0.0000
RFQ -
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IS61WV5128EDBLL-10BLI ISSI, Integrated Silicon Solution Inc
36 Pin Memory IC 4 Mb kb 8mm mm 35mA mA 8b b
Price: 3.2519
RFQ -
R1EX24002ATAS0I#S0 Renesas Electronics America
2/5V V 8 Pin Memory IC R1EX24002 4.4mm mm
Price: 0.0000
RFQ -
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70T3589S200BC8 Integrated Device Technology (IDT)
Surface Mount 256 Pin Memory IC 2.3 Mb kb 17mm mm 525mA mA 36b b
Price: 0.0000
RFQ -
71V3556SA166BGGI Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 4.5 Mb kb 14mm mm 360mA mA 36b b
Price: 0.0000
RFQ -
IS61LV6416-10T-TR ISSI, Integrated Silicon Solution Inc
Surface Mount 44 Pin Memory IC 1 Mb kb 120mA mA 16b b
Price: 0.0000
RFQ -
IS61WV6416DBLL-10BLI ISSI, Integrated Silicon Solution Inc
2.5/3.3V V 48 Pin Memory IC 1 Mb kb 8mm mm 55mA mA 16b b
Price: 0.4519
RFQ -
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