Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AS7C38096A-10BINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2012 | yes | Active | 3 (168 Hours) | 48 | 8mm | ROHS3 Compliant | 48 | 48-LFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.4mm | 1 | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 48 | YES | 0.75mm | 2.7V | 3.6V | 8Mb 1M x 8 | Volatile | 3V~3.6V | 1MX8 | 8 | 8388608 bit | 10 ns | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V016SA20YGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tape & Reel | 2011 | yes | Active | 3 (168 Hours) | 44 | 85°C | -40°C | 3.3V | 1 | 28.6mm | RoHS Compliant | Lead Free | No | 44 | Parallel | 3.6V | 3V | 1 Mb | 10.2mm | 2.9mm | CMOS | 3.683mm | 1 | 120mA | e3 | Matte Tin (Sn) - annealed | DUAL | J BEND | 260 | 3.3V | 44 | INDUSTRIAL | SRAMs | 3-STATE | 20 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93C46BXT/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | ROHS3 Compliant | Lead Free | Tin | No | 8 | 1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, Serial | 1 kb | Surface Mount | 0°C~70°C TA | CMOS | 1 | 2mA | e3 | DUAL | 260 | 5V | 40 | 93C46B | 8 | 1.27mm | 5V | 3-STATE | 6 ms | 1Kb 64 x 16 | Non-Volatile | 4.5V~5.5V | 64X16 | 16 | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 2ms | MICROWIRE | EEPROM | SPI | 2ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "IS43DR16160B-3DBI-TR") |
IS43DR16160B-3DBI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 84 | ROHS3 Compliant | 84-TFBGA | Surface Mount | -40°C~85°C TC | SDRAM - DDR2 | BOTTOM | 1.8V | YES | 0.8mm | R-PBGA-B84 | Not Qualified | 1.8V | 3-STATE | 450ps | 256Mb 16M x 16 | Volatile | 0.28mA | 1.7V~1.9V | 16MX16 | 16 | 268435456 bit | 333MHz | 0.025A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F256G08CKCABH2-10Z:A TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 100-TBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 256Gb 32G x 8 | Non-Volatile | 2.7V~3.6V | 100MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS39LV512-70VCE | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | Obsolete | 3 (168 Hours) | 32 | 3.3V | 12.4mm | RoHS Compliant | No | 32 | 32-TFSOP (0.488, 12.40mm Width) | 512 kb | Surface Mount | -40°C~105°C TA | FLASH - NOR | 15mA | 1.2mm | 1 | 15mA | DUAL | 3V | 0.5mm | 2.7V | 3.6V | 512Kb 64K x 8 | Non-Volatile | 16b | 2.7V~3.6V | 64KX8 | 8 | Asynchronous | 8b | 70 ns | 8b | 3V | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7164L25YGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 28-BSOJ (0.300, 7.62mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT7164 | 28-SOJ | 25ns | 64Kb 8K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H128M8SH-25E IT:M | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2014 | yes | Active | 3 (168 Hours) | 60 | EAR99 | 1 | 10mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-TFBGA | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | MT47H128M8 | 60 | YES | 0.8mm | R-PBGA-B60 | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 400ps | 1Gb 128M x 8 | Volatile | 1.7V~1.9V | 128MX8 | 8 | 1073741824 bit | 400MHz | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
709089L15PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT709089 | 15ns | 512Kb 64K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93C86BT-I/OT | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | yes | Active | 1 (Unlimited) | 6 | 5V | 3.1mm | ROHS3 Compliant | No | 6 | SOT-23-6 | Serial | 16 kb | 1.3mm | 1.8mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | 93C86B | 6 | 0.95mm | 5V | 100 ns | 16Kb 1K x 16 | Non-Volatile | 4.5V~5.5V | 3MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 2ms | MICROWIRE | EEPROM | SPI | 2ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NAND16GW3B6DPA6F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 114-LFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | NAND16G | 16Gb 2G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY7C1049G-10ZSXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2012 | Active | 3 (168 Hours) | 44 | 3A991.B.2.A | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.194mm | 8542.31.00.01 | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 30 | YES | 0.8mm | R-PDSO-G44 | 4.5V | 5.5V | 4Mb 512K x 8 | Volatile | 4.5V~5.5V | 512KX8 | 8 | 4194304 bit | 10 ns | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V2558S100BG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V2558 | 5ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V631S15BF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 208-LFBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70V631 | 208-CABGA (15x15) | 15ns | 4.5Mb 256K x 18 | Volatile | 3.15V~3.45V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SST26VF016BAT-104I/UB | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | SST26 SQI® | Obsolete | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | SPI | 104MHz | Surface Mount | -40°C~85°C TA | FLASH | SST26VF016B | 8-USON (4x3) | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 1.5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25C080-E/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 9.46mm | ROHS3 Compliant | Lead Free | No | 8 | 8-DIP (0.300, 7.62mm) | SPI, Serial | 8 kb | 7.62mm | Through Hole | -40°C~125°C TA | CMOS | 4.32mm | 1 | 5mA | e3 | Matte Tin (Sn) | DUAL | 5V | 25C080 | 8 | 2.54mm | 5V | 150 ns | 8Kb 1K x 8 | Non-Volatile | 4.5V~5.5V | 8 | 3MHz | 0.000005A | 200 | 10000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BR24L04-W | ROHM Semiconductor | 3.3592 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 9.3mm | ROHS3 Compliant | Lead Free | 8-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | 7.62mm | Through Hole | -40°C~85°C TA | CMOS | SYNCHRONOUS | 3.7mm | 8542.32.00.51 | 1 | e3/e2 | TIN/TIN COPPER | DUAL | 260 | 2.5V | 10 | BR24L04 | 8 | NO | 2.54mm | R-PDIP-T8 | 1.8V | Not Qualified | 2/5V | 5.5V | 400 ms | 4Kb 512 x 8 | Non-Volatile | 0.002mA | 1.8V~5.5V | 512X8 | 8 | 4096 bit | 400kHz | 0.000002A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDMR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT53B256M32D1DS-062 AUT:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 200-WFBGA | Surface Mount | -40°C~125°C TC | SDRAM - Mobile LPDDR4 | 8Gb 256M x 32 | Volatile | 1.1V | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V25761S200PFGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V25761 | 100-TQFP (14x14) | 3.1ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93C66CT-E/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 3mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Serial | 4 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | 1.1mm | 1 | 2mA | e3 | DUAL | 260 | 5V | 40 | 93C66C | 8 | 0.65mm | 5V | 200 ns | 4Kb 512 x 8 256 x 16 | Non-Volatile | 4.5V~5.5V | 256X16 | 16 | 3MHz | 0.000005A | 8 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 2ms | MICROWIRE | EEPROM | SPI | 2ms | ||||||||||||||||||||||||||||||||||||||||||||||||||
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S29GL256N11FFIIH0 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | Vendor Undefined | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7015S17J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | no | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | PLCC | Parallel | 5.5V | 4.5V | 72 kb | 24mm | 3.63mm | CMOS | 4.57mm | 1 | 310mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 17 ns | 9kB | RAM, SDR, SRAM | 26b | 8KX9 | Asynchronous | 0.015A | 9b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS63LV1024-10J | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | no | Obsolete | 2 (1 Year) | 32 | 3.3V | 1 | 20.955mm | Non-RoHS Compliant | 32 | 32-BSOJ (0.300, 7.62mm Width) | 1 Mb | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 3.56mm | 1 | 150mA | e0 | Tin/Lead (Sn/Pb) | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 32 | 3V | Not Qualified | 3.6V | 3-STATE | 1Mb 128K x 8 | Volatile | 17b | 3V~3.6V | 8 | Asynchronous | 8b | YES | COMMON | 2V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1LP5256ESA-7SR#B0 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 2 (1 Year) | ROHS3 Compliant | 28-TSSOP (0.465, 11.80mm Width) | Surface Mount | 0°C~70°C TA | SRAM | 28-TSOP | 70ns | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT40A512M16HA-083E IT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tray | 2017 | Obsolete | 3 (168 Hours) | 96 | EAR99 | 1 | 14mm | ROHS3 Compliant | AUTO/SELF REFRESH | 96-TFBGA | 9mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.2V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B96 | 1.14V | 1.26V | 8Gb 512M x 16 | Volatile | 1.14V~1.26V | 512MX16 | 16 | 8589934592 bit | 1.2GHz | MULTI BANK PAGE BURST | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL128P10FFI012 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | GL-P | Active | 3 (168 Hours) | 64 | 13mm | ROHS3 Compliant | Copper, Silver, Tin | No | 64 | 64-LBGA | 128 Mb | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.4mm | 8542.32.00.51 | 1 | 110mA | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3V | 40 | 1mm | 2.7V | 3/3.3V | 3.6V | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 128MX1 | 1 | Asynchronous | 0.000005A | 100 ns | 8 | 3V | YES | YES | YES | 128 | 8/16words | YES | YES | FLASH | Parallel | 100ns | 128K | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C16M32MS-7BCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | 90-VFBGA | Surface Mount | -25°C~85°C TA | SDRAM - Mobile SDRAM | 5.4ns | 512Mb 16M x 32 | Volatile | 1.7V~1.95V | 133MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61LPS51218B-200TQLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 3.1ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F8G01ADBFD12-ITES:F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 24-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 8Gb 8G x 1 | Non-Volatile | 1.7V~1.95V | FLASH | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
EDB4064B4PB-1DIT-F-R TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Tape & Reel (TR) | Last Time Buy | 3 (168 Hours) | ROHS3 Compliant | 216-WFBGA | Surface Mount | -40°C~85°C TC | SDRAM - Mobile LPDDR2 | 4Gb 64M x 64 | Volatile | 1.14V~1.95V | 533MHz | DRAM | Parallel |
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71V016SA20YGI8 Integrated Device Technology (IDT)
Surface Mount 44 Pin Memory IC 1 Mb kb 28.6mm mm 120mA mA 16b b
Price: 0.0000
RFQ -
93C46BXT/SN Microchip Technology
5V V Surface Mount 8 Pin Memory IC 93C46B 1 kb kb 2mA mA
Price: 0.0000
RFQ -
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IS39LV512-70VCE ISSI, Integrated Silicon Solution Inc
Surface Mount Memory IC 512 kb kb 12.4mm mm 15mA mA 8b b
Price: 0.0000
RFQ -
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MT47H128M8SH-25E IT:M Micron Technology Inc.
1.8V V 60 Pin Memory IC MT47H128M8 10mm mm
Price: 0.0000
RFQ -
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93C86BT-I/OT Microchip Technology
5V V Surface Mount 6 Pin Memory IC 93C86B 16 kb kb 3.1mm mm 3mA mA
Price: 0.0000
RFQ -
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SST26VF016BAT-104I/UB Microchip Technology
SST26 SQI® Memory IC SST26 SQI® Series SST26VF016B
Price: 0.0000
RFQ -
25C080-E/P Microchip Technology
5V V Through Hole 8 Pin Memory IC 25C080 8 kb kb 9.46mm mm 5mA mA
Price: 0.0000
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93C66CT-E/MS Microchip Technology
5V V Surface Mount 8 Pin Memory IC 93C66C 4 kb kb 3mm mm 2mA mA
Price: 0.0000
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7015S17J Integrated Device Technology (IDT)
5V V Surface Mount 68 Pin Memory IC 72 kb kb 24mm mm 310mA mA 9b b
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IS63LV1024-10J ISSI, Integrated Silicon Solution Inc
Surface Mount 32 Pin Memory IC 1 Mb kb 20.955mm mm 150mA mA 8b b
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S29GL128P10FFI012 Cypress Semiconductor Corp
3/3.3V V Surface Mount GL-P Memory IC GL-P Series 128 Mb kb 13mm mm 110mA mA
Price: 0.0000
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