Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Serial Bus Type | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
70V3579S4DR | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 208-BFQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V3579 | 4.2ns | 1.125Mb 32K x 36 | Volatile | 3.15V~3.45V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25DF041B-MAHN-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | 8-UFDFN Exposed Pad | 2mm | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 0.6mm | 1 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-N8 | 1.65V | 3.6V | 4Mb 512K x 8 | Non-Volatile | 1.65V~3.6V | 4MX1 | 1 | 4194304 bit | SERIAL | 104MHz | 1.8V | FLASH | SPI | 8μs, 2.5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3589S133BCI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 256 | 85°C | -40°C | 3.3V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 3.45V | 3.15V | 2.3 Mb | 133MHz | 17mm | 1.4mm | CMOS | 1.7mm | 1 | 480mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 3.3V | 256 | INDUSTRIAL | 1mm | SRAMs | 3-STATE | 15 ns | RAM, SRAM | 32b | 64KX36 | Synchronous | 0.04A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25AA128T-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Active | 1 (Unlimited) | 85°C | -40°C | 5V | ROHS3 Compliant | Lead Free | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 5.5V | No SVHC | 1.8V | 128 kb | 10MHz | Surface Mount | -40°C~85°C TA | EEPROM | 5mA | 3MHz | 25AA128 | 8-TSSOP | 50 ns | 128Kb 16K x 8 | Non-Volatile | 1.8V~5.5V | 10MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M95320-DWDW4TP/K | STMicroelectronics | 2.1047 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | ACTIVE (Last Updated: 7 months ago) | Surface Mount | Cut Tape (CT) | Automotive, AEC-Q100 | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | SPI, Serial | 32 kb | 3mm | Surface Mount | -40°C~145°C TA | CMOS | 1.2mm | 1 | 4mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 5V | M95320 | 8 | 0.65mm | 2.5V | 5.5V | 20 ns | 32Kb 4K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 10MHz | 4ms | SPI | EEPROM | SPI | 4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424L12Y | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 36 | 3A991.B.2.A | 70°C | 0°C | 23.495mm | RoHS Compliant | 36 | Parallel | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 36 | COMMERCIAL | YES | 1.27mm | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.155mA | 512KX8 | 8 | 4194304 bit | 0.01A | 12 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7035L20PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 5.5V | 4.5V | 144 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 240mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 20 ns | 18kB | RAM, SDR, SRAM | 13b | 8KX8 | Asynchronous | 0.0015A | 18b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61LPS25636A-200B3LI | ISSI, Integrated Silicon Solution Inc | 23.7119 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | yes | Active | 2 (1 Year) | 165 | 3A991.B.2.A | 3.3V | 4 | 15mm | ROHS3 Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-TBGA | 9 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.2mm | 1 | 275mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 40 | 165 | YES | 1mm | 3.135V | 3-STATE | 3.1ns | 9Mb 256K x 36 | Volatile | 18b | 3.135V~3.465V | 256KX36 | 36 | Synchronous | 200MHz | 0.105A | 36b | COMMON | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43R86400F-5TLI | ISSI, Integrated Silicon Solution Inc | 9.1781 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 66 | EAR99 | 1 | 22.22mm | ROHS3 Compliant | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 2.5V | NOT SPECIFIED | YES | 0.65mm | R-PDSO-G66 | 2.3V | 2.7V | 700ps | 512Mb 64M x 8 | Volatile | 2.5V~2.7V | 64MX8 | 8 | 536870912 bit | 200MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3577S65PFG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V3577 | 6.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S32800G-7BI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 90 | ROHS3 Compliant | 90-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM | 143MHz | BOTTOM | 3.3V | YES | 0.8mm | R-PBGA-B90 | Not Qualified | 3.3V | 3-STATE | 5.4 ns | 256Mb 8M x 32 | Volatile | 0.27mA | 3V~3.6V | 8MX32 | 32 | 268435456 bit | 32b | 0.003A | COMMON | 4096 | DRAM | Parallel | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43LR32400G-6BLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 90 | 1 | 13mm | ROHS3 Compliant | AUTO/SELF REFRESH | 90-TFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B90 | 1.7V | 1.95V | 5.5ns | 128Mb 4M x 32 | Volatile | 1.7V~1.95V | 4MX32 | 32 | 134217728 bit | 166MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53D512M64D4BP-046 WT ES:E TR") |
MT53D512M64D4BP-046 WT ES:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 32Gb 512M x 64 | Volatile | 1.1V | 1866MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
520966231016 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | Vendor Undefined | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70261L55PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | TQFP | Parallel | 5.5V | 4.5V | 256 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 230mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 55 ns | 32kB | RAM, SDR, SRAM | 28b | 16KX16 | Asynchronous | 0.005A | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||
|
MT53B512M32D2NP-062 WT ES:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | 200-WFBGA | Surface Mount | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 16Gb 512M x 32 | Volatile | 1.1V | 1600MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS25WP128F-JBLE-TR | ISSI, Integrated Silicon Solution Inc | 1.9990 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.28mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | S-PDSO-G8 | 1.65V | 1.95V | 128Mb 16M x 8 | Non-Volatile | 1.65V~1.95V | 16MX8 | 8 | 134217728 bit | SERIAL | 133MHz | 1 | 1.8V | FLASH | SPI - Quad I/O, QPI, DTR | 800μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61QDPB42M36A1-550M3LI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 165 | 17mm | ROHS3 Compliant | 165-LBGA | 15mm | Surface Mount | -40°C~85°C TA | SRAM - Quad Port, Synchronous | 1.4mm | 1 | BOTTOM | 1.8V | YES | 1mm | R-PBGA-B165 | 1.71V | Not Qualified | 1.8V | 1.89V | 3-STATE | 72Mb 2M x 36 | Volatile | 1.3mA | 1.71V~1.89V | 2MX36 | 36 | 75497472 bit | 550MHz | 0.38A | 0.45 ns | SEPARATE | 1.71V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61NLP102418B-200TQLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 100 | 20mm | ROHS3 Compliant | 100-LQFP | 14mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | QUAD | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.65mm | R-PQFP-G100 | 3.135V | 3.465V | 3ns | 18Mb 1M x 18 | Volatile | 3.135V~3.465V | 1MX18 | 18 | 18874368 bit | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48H8M32LFF5-8 IT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Box | 2005 | Discontinued | 2 (1 Year) | 90 | EAR99 | 1 | 13mm | Non-RoHS Compliant | AUTO/SELF REFRESH | 90-VFBGA | not_compliant | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPSDR | SYNCHRONOUS | 1mm | 8542.32.00.24 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 235 | 1.8V | 30 | MT48H8M32 | 90 | YES | 0.8mm | R-PBGA-B90 | 1.7V | Not Qualified | 1.8V | 1.9V | 7ns | 256Mb 8M x 32 | Volatile | 0.21mA | 1.7V~1.95V | 8MX32 | 32 | 268435456 bit | 125MHz | 0.00001A | COMMON | 4096 | DRAM | Parallel | 15ns | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H64M16HR-3 AAT:H TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 84-TFBGA | Surface Mount | -40°C~105°C TC | SDRAM - DDR2 | MT47H64M16 | 84-FBGA (8x12.5) | 450ps | 1Gb 64M x 16 | Volatile | 1.7V~1.9V | 333MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT41J128M8JP-15E AIT:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2014 | Obsolete | 3 (168 Hours) | 78 | EAR99 | 1 | 11.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 78-TFBGA | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR3 | SYNCHRONOUS | 1.2mm | 8542.32.00.32 | 1 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.5V | 30 | MT41J128M8 | 78 | YES | 0.8mm | R-PBGA-B78 | 1.425V | Not Qualified | 1.5V | 1.575V | 3-STATE | AEC-Q100 | 1Gb 128M x 8 | Volatile | 0.235mA | 1.425V~1.575V | 128MX8 | 8 | 1073741824 bit | 667MHz | 0.255 ns | COMMON | 8192 | MULTI BANK PAGE BURST | DRAM | Parallel | 8 | 8 | |||||||||||||||||||||||||||||||||||||||||||||||
|
71V3559S85PFG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3559 | 100-TQFP (14x14) | 8.5ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS28DG02E-3C+T | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | 28 | EAR99 | 5V | 9.7mm | ROHS3 Compliant | 28-TSSOP (0.173, 4.40mm Width) Exposed Pad | SPI, Serial | 4.4mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 8542.32.00.51 | 1 | e3 | MATTE TIN | DUAL | 260 | 3.3V | NOT SPECIFIED | DS28DG02 | 28 | YES | 0.65mm | R-PDSO-G28 | 2.2V | Not Qualified | 2Kb 256 x 8 | Non-Volatile | 0.0008mA | 2.2V~5.25V | 256X8 | 8 | 2048 bit | 2MHz | 0.0001A | 40 | 200000 Write/Erase Cycles | HARDWARE | 3V | SPI | EEPROM | SPI | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS63WV1024BLL-12BLI | ISSI, Integrated Silicon Solution Inc | 2.6557 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Surface Mount | Tray | yes | Active | 2 (1 Year) | 48 | 3.3V | 1 | 8mm | ROHS3 Compliant | No | 48 | 48-TFBGA | 1 Mb | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 45mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 40 | 48 | 0.75mm | 2.97V | 3.63V | 3-STATE | 1Mb 128K x 8 | Volatile | 17b | 3V~3.6V | 8 | Asynchronous | 0.00005A | 8b | COMMON | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29RZ4C4DZZMGGM-18W.80U | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | RoHS Compliant | -25°C~85°C TA | FLASH - NAND, DRAM - LPDDR2 | 4Gb 256M x 16 N 4G 128M x 32 LPDDR2 | Non-Volatile | 1.8V | 533MHz | FLASH, RAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1315TV18-200BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | 70°C | 0°C | Non-RoHS Compliant | 165 | 165-LBGA | Parallel | 200MHz | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | CY7C1315 | 165-FBGA (13x15) | 18Mb 512K x 36 | Volatile | 1.7V~1.9V | 200MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V2556S100PF8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V2556 | 5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 100MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7140LA25J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2013 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 8 kb | 3.63mm | 19mm | 3.63mm | 2.96261g | CMOS | 110mA | 1 | 170mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 25 ns | 1kB | RAM, SDR, SRAM | 20b | 1KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||
|
IS61NVF51236-6.5B3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | no | Active | 3 (168 Hours) | 165 | 3A991.B.2.A | 15mm | ROHS3 Compliant | 165 | FLOW-THROUGH ARCHITECTURE | 165-TBGA | 13mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 2.5V | NOT SPECIFIED | 165 | YES | 1mm | 2.375V | Not Qualified | 2.5V | 2.625V | 3-STATE | 6.5ns | 18Mb 512K x 36 | Volatile | 0.45mA | 2.375V~2.625V | 512KX36 | 36 | 18874368 bit | 133MHz | 0.06A | COMMON | 2.38V | SRAM | Parallel |
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