Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Max Power Dissipation | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDT6116SA20TP | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Rail/Tube | 2008 | 24 | EAR99 | 70°C | 0°C | 5V | 1 | Non-RoHS Compliant | 24 | PDIP | Parallel | 5.5V | not_compliant | 4.5V | 16 kb | CMOS | 1 | 105mA | e0 | DUAL | 225 | 5V | 30 | 24 | COMMERCIAL | 2.54mm | SRAMs | Not Qualified | 5V | 3-STATE | 20 ns | RAM, SRAM - Asynchronous | 11b | 2KX8 | 8 | Asynchronous | 0.002A | 8b | YES | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
47C16T-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | 3mm | Surface Mount | -40°C~85°C TA | EEPROM, SRAM | SYNCHRONOUS | 1.2mm | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 5V | 40 | 47C16 | YES | 0.65mm | R-PDSO-G8 | 4.5V | 5.5V | 400ns | 16Kb 2K x 8 | Non-Volatile | 4.5V~5.5V | 2KX8 | 8 | 16384 bit | 1MHz | EERAM | I2C | 1ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S34ML01G200TFI900 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2016 | ML-2 | Discontinued | 3 (168 Hours) | 3A991.B.1.A | ROHS3 Compliant | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 1 Gb | Surface Mount | -40°C~85°C TA | FLASH - NAND | 8542.32.00.51 | 1Gb 128M x 8 | Non-Volatile | 28b | 2.7V~3.6V | 3V | 2kB | FLASH | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25160BN-SH-B | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | AT25160 | 8-SOIC | 16Kb 2K x 8 | Non-Volatile | 1.8V~5.5V | 20MHz | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61NLP51236B-200TQLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 100 | 20mm | ROHS3 Compliant | 100-LQFP | 14mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | QUAD | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.65mm | R-PQFP-G100 | 3.135V | 3.465V | 3ns | 18Mb 512K x 36 | Volatile | 3.135V~3.465V | 512KX36 | 36 | 18874368 bit | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V9179L9PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 288 kb | 40MHz | 14mm | 1.4mm | CMOS | 1 | 260mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 9 ns | 36kB | RAM, SDR, SRAM | 15b | Synchronous | 0.003A | 9b | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS6C1008-55SINLTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2006 | yes | Active | 3 (168 Hours) | ROHS3 Compliant | 32 | 32-SOIC (0.445, 11.30mm Width) | unknown | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | NOT SPECIFIED | NOT SPECIFIED | 1Mb 128K x 8 | Volatile | 2.7V~5.5V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24LC128T-E/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel (TR) | 2010 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Tin | 8 | 1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | I2C, Serial | 128 kb | 3mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | 3mA | e3 | DUAL | 260 | 4.5V | 40 | 24LC128 | 8 | YES | 0.65mm | 2.5V | Not Qualified | 3/5V | 5.5V | 900ns | 128Kb 16K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT27C512R-45JU | Microchip Technology | 14.8532 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 1997 | yes | Active | 2 (1 Year) | 32 | 5V | 14.1mm | ROHS3 Compliant | Lead Free | Tin | No | 32 | 32-LCC (J-Lead) | No SVHC | 512 kb | 45GHz | 2.79mm | 11.51mm | Surface Mount | -40°C~85°C TC | EPROM - OTP | 100μA | 1 | 20mA | e3 | QUAD | 245 | 5V | 40 | AT27C512 | 1.27mm | OTP ROMs | 5V | 3-STATE | 45ns | 512Kb 64K x 8 | Non-Volatile | 4.5V~5.5V | 64KX8 | 0.0001A | COMMON | EPROM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3557S80PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 85°C | -40°C | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | INDUSTRIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.26mA | 128KX36 | 36 | 4718592 bit | 95MHz | 0.045A | 8 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST39VF401C-70-4C-B3KE-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | SST39 MPF™ | Active | 3 (168 Hours) | 48 | 3.3V | ROHS3 Compliant | No | 48 | 48-TFBGA | 4 Mb | Surface Mount | 0°C~70°C TA | CMOS | 18mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | SST39VF401C | 0.8mm | 70ns | 4Mb 256K x 16 | Non-Volatile | 1b | 2.7V~3.6V | 256KX16 | 16 | Asynchronous | 0.00002A | 16b | YES | YES | YES | 128 | YES | YES | FLASH | Parallel | 10μs | 2K | BOTTOM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3599S133BFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | no | Active | 3 (168 Hours) | 208 | 85°C | -40°C | 3.3V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 3.45V | 3.15V | 4.5 Mb | 133MHz | 15mm | 1.4mm | CMOS | 1.7mm | 1 | 480mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 3.3V | 208 | INDUSTRIAL | 0.8mm | SRAMs | 3-STATE | 15 ns | RAM, SRAM | 34b | Synchronous | 0.04A | 36b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1363A-117AC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | no | Obsolete | 3 (168 Hours) | 100 | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | 100-LQFP | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | e0 | TIN LEAD | QUAD | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 100 | YES | 0.65mm | R-PQFP-G100 | 3.135V | COMMERCIAL | 3.63V | 7ns | 9Mb 512K x 18 | Volatile | 3.135V~3.6V | 512KX18 | 18 | 9437184 bit | 117MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT29F32G08ABEABM73A3WC1P") |
MT29F32G08ABEABM73A3WC1P | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2016 | Obsolete | 3 (168 Hours) | 70°C | 0°C | ROHS3 Compliant | Die | Parallel | Surface Mount | 0°C~70°C TA | FLASH - NAND | Die | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14B512Q1A-SXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2008 | Obsolete | 3 (168 Hours) | 8 | 3A991.B.2.A | 3V | ROHS3 Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | unknown | 512 kb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | SYNCHRONOUS | 1.727mm | 1 | 3mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3V | 20 | CY14B512 | 1.27mm | 2.7V | SRAMs | Not Qualified | 3.6V | 1W | 9 ns | 512Kb 64K x 8 | Non-Volatile | 2.7V~3.6V | 8 | 8b | 40MHz | 0.00015A | 8b | NVSRAM | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT41K1G8TRF-125:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2013 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 78-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | MT41K1G8 | 13.5ns | 8Gb 1G x 8 | Volatile | 1.283V~1.45V | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F64G08CBABBWP-12:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | MT29F64G08 | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | 83MHz | FLASH | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MX66U1G45GXDJ00 | Macronix | 17.3619 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | Active | 24 | 8mm | ALSO CONFIGURED WITH 1-BIT WIDTH | 6mm | CMOS | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | BALL | 1.8V | INDUSTRIAL | YES | 1mm | R-PBGA-B24 | 1.7V | 105°C | -40°C | 2V | 256MX4 | 4 | 1073741824 bit | FLASH | SERIAL | 133MHz | 2 | 1.8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V424L12Y | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 36 | 3A991.B.2.A | 70°C | 0°C | 23.495mm | RoHS Compliant | 36 | Parallel | 10.16mm | CMOS | 3.683mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 36 | COMMERCIAL | YES | 1.27mm | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.155mA | 512KX8 | 8 | 4194304 bit | 0.01A | 12 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3577YS80PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V3577 | 8ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28HC256F-12FM/883 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 23 Weeks | Surface Mount | Tube | 1997 | no | Active | 3 (168 Hours) | 28 | 5V | Non-RoHS Compliant | Contains Lead | Lead, Tin | 28 | AUTOMATIC WRITE | 28-CFlatPack | Parallel, SPI | 256 kb | 120GHz | 10.16mm | Surface Mount | -55°C~125°C TC | CMOS | ASYNCHRONOUS | 3.02mm | 1 | 80mA | e0 | TIN LEAD | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | AT28HC256 | 1.27mm | Not Qualified | 5V | 3-STATE | 120ns | MIL-STD-883 Class C | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 32KX8 | 8 | 0.0003A | 10000 Write/Erase Cycles | 3ms | 5V | YES | YES | 64words | EEPROM | Parallel | 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61NLP51218B-200TQLI | ISSI, Integrated Silicon Solution Inc | 12.8010 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | 100 | 20mm | ROHS3 Compliant | 100-LQFP | 14mm | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 8542.32.00.41 | 1 | QUAD | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.65mm | R-PQFP-G100 | 3.135V | 3.465V | 3.1ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 512KX18 | 18 | 9437184 bit | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1565KV18-400BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2003 | Obsolete | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 72 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II+ | 1.4mm | 1 | 1A | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 1.8V | 30 | CY7C1565 | 165 | 1mm | 1.7V | 1.9V | 3-STATE | 450 ps | 72Mb 2M x 36 | Volatile | 19b | 1.7V~1.9V | 36 | Synchronous | 400MHz | 36b | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CY7C1393KV18-333BZI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tray | 2003 | Active | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 18 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, DDR II | 1.4mm | 1 | 450mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 1.8V | 30 | CY7C1393 | 165 | 1mm | 1.7V | 1.9V | 3-STATE | 450 ps | 18Mb 1M x 18 | Volatile | 19b | 1.7V~1.9V | 1MX18 | 18 | Synchronous | 333MHz | 18b | SEPARATE | 1.7V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FS512SDSBHA213 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100, FS-S | Active | 3 (168 Hours) | 24 | 8mm | ROHS3 Compliant | IT IS ALSO CONFIGURED AS 512M X 1 | 24-TBGA | 6mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1mm | R-PBGA-B24 | 1.7V | 2V | AEC-Q100; TS 16949 | 512Mb 64M x 8 | Non-Volatile | 1.7V~2V | 128MX4 | 4 | 536870912 bit | SERIAL | 80MHz | 2 | 1.8V | FLASH | SPI - Quad I/O, QPI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1225AD-70IND+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 28 | EAR99 | 5V | 38.227mm | ROHS3 Compliant | Lead Free | Tin | No | 28 | 10 YEAR DATA RETENTION | 28-DIP Module (0.600, 15.24mm) | Unknown | 64 kb | 70GHz | Through Hole | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | 85mA | 10.668mm | 8473.30.11.40 | 1 | e3 | DUAL | 5V | DS1225A | 28 | 2.54mm | SRAMs | 5V | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | 8KX8 | 8 | 8b | 0.01A | 70 ns | NVSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT41K256M8DA-125 AAT:K | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2013 | Active | 3 (168 Hours) | 78 | 1 | 10.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 78-TFBGA | 8mm | Surface Mount | -40°C~105°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 1.35V | MT41K256M8 | YES | 0.8mm | R-PBGA-B78 | 1.283V | Not Qualified | 1.35V | 1.45V | 3-STATE | 13.75ns | AEC-Q100 | 2Gb 256M x 8 | Volatile | 0.195mA | 1.283V~1.45V | 256MX8 | 8 | 2147483648 bit | 800MHz | 0.012A | COMMON | 8192 | DRAM | Parallel | 8 | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS64WV12816DBLL-12CTLA3 | ISSI, Integrated Silicon Solution Inc | 6.9042 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tray | yes | Active | 3 (168 Hours) | 44 | 1 | ROHS3 Compliant | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 2 Mb | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 1 | 60mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 10 | 44 | YES | 0.8mm | 2.4V | 2.5/3.3V | 3.6V | 3-STATE | 2Mb 128K x 16 | Volatile | 17b | 2.4V~3.6V | 16 | Asynchronous | 16b | COMMON | 2V | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V2559S85BG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V2559 | 119-PBGA (14x22) | 8.5ns | 4.5Mb 256K x 18 | Volatile | 3.135V~3.465V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS7C256A-10TCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2001 | yes | Active | 3 (168 Hours) | 28 | 11.8mm | ROHS3 Compliant | 28 | 28-TSSOP (0.465, 11.80mm Width) | 8mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1.2mm | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 260 | 5V | 40 | 28 | YES | 0.55mm | 4.5V | 5.5V | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | 32KX8 | 8 | 262144 bit | 10 ns | SRAM | Parallel | 10ns |
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