Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Page Size | Serial Bus Type | I2C Control Byte | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IS25LP080D-JKLE-TR | ISSI, Integrated Silicon Solution Inc | 0.6179 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 8 | 6mm | ROHS3 Compliant | 8-WDFN Exposed Pad | 5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N8 | 2.3V | 3.6V | 8Mb 1M x 8 | Non-Volatile | 2.3V~3.6V | 1MX8 | 8 | 8388608 bit | SERIAL | 133MHz | 3V | FLASH | SPI - Quad I/O, QPI, DTR | 800μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T3599S133DR | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 208-BFQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70T3599 | 208-PQFP (28x28) | 4.2ns | 4.5Mb 128K x 36 | Volatile | 2.4V~2.6V | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V3399S133PRFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 128-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Synchronous | IDT70V3399 | 128-TQFP (14x20) | 4.2ns | 2Mb 128K x 18 | Volatile | 3.15V~3.45V | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43DR16320D-25DBL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 84 | EAR99 | 1 | 12.5mm | ROHS3 Compliant | PROGRAMMABLE CAS LATENCY | 84-TFBGA | 8mm | Surface Mount | 0°C~70°C TA | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | e1 | TIN SILVER COPPER | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B84 | 1.7V | Not Qualified | 1.8V | 1.9V | 3-STATE | 400ps | 512Mb 32M x 16 | Volatile | 0.25mA | 1.7V~1.9V | 32MX16 | 16 | 536870912 bit | 400MHz | 0.025A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1303BV25-167BZC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tray | 2004 | no | Obsolete | 3 (168 Hours) | 165 | 2.5V | 2 | 15mm | Non-RoHS Compliant | Lead Free | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 18 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR | 1.4mm | 1 | 500mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 2.5V | CY7C1303 | 165 | 1mm | 3-STATE | 2.5 ns | 18Mb 1M x 18 | Volatile | 19b | 2.4V~2.6V | 1MX18 | 18 | Synchronous | 167MHz | 18b | SEPARATE | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3557SA85BQI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 165 | 3A991.B.2.A | 85°C | -40°C | 15mm | Non-RoHS Compliant | 165 | FLOW-THROUGH ARCHITECTURE | Parallel | not_compliant | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | INDUSTRIAL | YES | 1mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.235mA | 128KX36 | 36 | 4718592 bit | 90MHz | 0.045A | 8.5 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3557S75PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V3557 | 7.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
11LC160-I/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 8 | Through Hole | EAR99 | 5V | 9.27mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-DIP (0.300, 7.62mm) | Serial | No SVHC | 16 kb | 3.3mm | 6.35mm | Through Hole | -40°C~85°C TA | CMOS | 1 | 5mA | e3 | DUAL | 5V | 11LC160 | 8 | 2.54mm | 5 ms | 16Kb 2K x 8 | Non-Volatile | 2.5V~5.5V | 100kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | 1-WIRE | EEPROM | Single Wire | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3557SA85BG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | BGA | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.225mA | 128KX36 | 36 | 4718592 bit | 90MHz | 0.04A | 8.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V35761S183BQGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 85°C | -40°C | RoHS Compliant | 165 | Parallel | 183MHz | RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V67703S75PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2009 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.265mA | 256KX36 | 36 | 9437184 bit | 117MHz | 0.05A | 7.5 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1EX24002ATAS0I#S0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | Lead Free | 8 | 8-TSSOP (0.173, 4.40mm Width) | 2-Wire, I2C, Serial | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | e4 | NICKEL PALLADIUM GOLD | DUAL | 3.3V | R1EX24002 | 8 | YES | 0.65mm | Not Qualified | 2/5V | 5.5V | 900ns | 2Kb 256 x 8 | Non-Volatile | 0.0025mA | 1.8V~5.5V | 8 | 400kHz | 0.000002A | 100 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71016S15PH8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | 70°C | 0°C | 1 | 18.41mm | RoHS Compliant | TSOP | Parallel | 10.16mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | GULL WING | 225 | 5V | 20 | 44 | COMMERCIAL | YES | 0.8mm | R-PDSO-G44 | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.18mA | 64KX16 | 16 | 1048576 bit | 0.01A | 15 ns | YES | COMMON | 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS42S16800D-75ETLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 2 (1 Year) | RoHS Compliant | 54 | 54-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SDRAM | 6.5ns | 128Mb 8M x 16 | Volatile | 3V~3.6V | 16b | 133MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61VPS51236A-200TQI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | no | Obsolete | 2 (1 Year) | 100 | 3A991.B.2.A | 2.5V | 4 | 20mm | Non-RoHS Compliant | No | 100 | PIPELINED ARCHITECTURE | 100-LQFP | 18 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1.6mm | 1 | 475mA | e0 | Tin/Lead (Sn/Pb) | QUAD | 240 | 2.5V | 30 | 100 | YES | 0.65mm | 2.375V | 2.625V | 3-STATE | 3.1ns | 18Mb 512K x 36 | Volatile | 19b | 2.375V~2.625V | 512KX36 | 36 | Synchronous | 200MHz | 0.125A | 36b | COMMON | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F1G01AAADDH4:D TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 3 Weeks | Tape & Reel (TR) | 1996 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 63-VFBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | MT29F1G01 | 1Gb 1G x 1 | Non-Volatile | 2.7V~3.6V | FLASH | SPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS43LR16200C-6BL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 70°C | 0°C | RoHS Compliant | 60 | 60-TFBGA | Parallel | 1.95V | 1.7V | 166MHz | Surface Mount | 0°C~70°C TA | SDRAM - Mobile LPDDR | 166MHz | 60-TFBGA (8x10) | 5.5ns | 32Mb 2M x 16 | Volatile | 1.7V~1.95V | 16b | 166MHz | DRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
709279L9PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Bulk | 2009 | Active | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 512 kb | 40MHz | 14mm | 1.4mm | 350mA | 9 ns | 64kB | RAM, SDR, SRAM | 30b | Synchronous | 16b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "24AA08H-I/W16K") |
24AA08H-I/W16K | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -40°C~85°C TA | EEPROM | 24AA08H | Die | 900ns | 8Kb 256 x 8 x 4 | Non-Volatile | 1.7V~5.5V | 400kHz | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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93LC46C/WF15K | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | 0°C~70°C TA | EEPROM | 93LC46C | Die | 1Kb 128 x 8 64 x 16 | Non-Volatile | 2.5V~5.5V | 3MHz | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65602S150BG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 3 (168 Hours) | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | BGA | Parallel | not_compliant | 150MHz | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.325mA | 256KX36 | 36 | 9437184 bit | 0.04A | 3.8 ns | COMMON | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29F2T08CWCCBJ7-12:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 152-LBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 152-LBGA (14x18) | 2Tb 256G x 8 | Non-Volatile | 2.7V~3.6V | 83MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61NLP12836B-200B2LI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | yes | Active | 2 (1 Year) | 119 | 3A991.B.2.A | 3.3V | 4 | 22mm | ROHS3 Compliant | No | 119 | PIPELINED ARCHITECTURE | 119-BBGA | 4 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 1 | 210mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3.3V | 40 | 119 | YES | 1.27mm | 3.135V | 3-STATE | 3.1ns | 4.5Mb 128K x 36 | Volatile | 17b | 3.135V~3.465V | 128KX36 | 36 | Synchronous | 200MHz | 0.035A | 36b | COMMON | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V9179L7PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | IDT70V9179 | 7.5ns | 288Kb 32K x 9 | Volatile | 3V~3.6V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416S20PHG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 70°C | 0°C | RoHS Compliant | TSOP | Parallel | RAM, SRAM - Asynchronous | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24MAC402-MAHM-T | Microchip Technology | 0.7427 |
Min: 1 Mult: 1 |
0.00000000 | download | 3 Weeks | Surface Mount | Cut Tape (CT) | 2008 | yes | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | No | 8 | 8-UFDFN Exposed Pad | 2-Wire, I2C, Serial | 2 kb | 2mm | Surface Mount | -40°C~85°C TA | CMOS | 0.6mm | 1 | 3mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 2.5V | 40 | AT24MAC402 | 0.5mm | 1.7V | 5.5V | 550ns | 2Kb 256 x 8 | Non-Volatile | 1.7V~5.5V | 8 | 1MHz | 0.000001A | 100 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V28L20PFG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70V28 | 1Mb 64K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25XE512C-MAHN-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Cut Tape (CT) | 2013 | yes | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | Lead Free | 8-UFDFN Exposed Pad | SPI, Serial | 512 kb | 2mm | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 0.6mm | 1 | DUAL | 1.8V | 0.5mm | R-PDSO-N8 | 1.65V | 3.6V | 8 ns | 512Kb 64K x 8 | Non-Volatile | 1.65V~3.6V | 512KX1 | 1 | 104MHz | 1.8V | 256B | FLASH | SPI | 12μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT46H256M32R4JV-5 WT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2013 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 168-VFBGA | Surface Mount | -25°C~85°C TA | SDRAM - Mobile LPDDR | MT46H256M32 | 168-VFBGA (12x12) | 5ns | 8Gb 256M x 32 | Volatile | 1.7V~1.95V | 200MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS49NLS18160-25BI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | 144 | EAR99 | 1 | 18.5mm | Non-RoHS Compliant | 144 | AUTO REFRESH | 144-TFBGA | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.28 | 1 | 400MHz | BOTTOM | 1.8V | 144 | YES | 1mm | 1.7V | Not Qualified | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 288Mb 16M x 18 | Volatile | 0.97mA | 1.7V~1.9V | 16MX18 | 18 | 301989888 bit | 18b | 0.048A | SEPARATE | DRAM | Parallel | 248 |
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IS43DR16320D-25DBL ISSI, Integrated Silicon Solution Inc
1.8V V Memory IC 12.5mm mm
Price: 0.0000
RFQ -
CY7C1303BV25-167BZC Cypress Semiconductor Corp
Surface Mount 165 Pin Memory IC CY7C1303 18 Mb kb 15mm mm 500mA mA 18b b
Price: 0.0000
RFQ -
IDT71V3557SA85BQI Integrated Device Technology (IDT)
3.3V V 165 Pin Memory IC 15mm mm
Price: 0.0000
RFQ -
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11LC160-I/P Microchip Technology
Through Hole 8 Pin Memory IC 11LC160 16 kb kb 9.27mm mm 5mA mA
Price: 0.0000
RFQ -
IDT71V3557SA85BG8 Integrated Device Technology (IDT)
3.3V V 119 Pin Memory IC 22mm mm
Price: 0.0000
RFQ -
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IDT71V67703S75PF8 Integrated Device Technology (IDT)
3.3V V 100 Pin Memory IC 20mm mm
Price: 0.0000
RFQ -
R1EX24002ATAS0I#S0 Renesas Electronics America
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