Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | I/O Type | Programming Voltage | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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71V321L35J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 3.3V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | BATTERY BACKUP;AUTOMATIC POWER DOWN | PLCC | Parallel | 3.6V | 3V | 16 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 95mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 52 | COMMERCIAL | SRAMs | 3-STATE | 35 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||
| IS25LQ025B-JKLE-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 8 | 6mm | ROHS3 Compliant | 8-WDFN Exposed Pad | SPI, Serial | 5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 0.8mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-N8 | 2.3V | 3.6V | 256Kb 32K x 8 | Non-Volatile | 2.3V~3.6V | 256KX1 | 1 | 262144 bit | 104MHz | 3V | FLASH | SPI - Quad I/O | 800μs | |||||||||||||||||||||||||||||||||||||||||||||||||
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CG8532AAT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71124S12YI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | 3 (168 Hours) | 32 | 3A991.B.2.B | 85°C | -40°C | 20.955mm | Non-RoHS Compliant | 32 | Parallel | not_compliant | 10.16mm | CMOS | 3.683mm | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 5V | 30 | 32 | INDUSTRIAL | YES | 1.27mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.16mA | 128KX8 | 8 | 1048576 bit | 0.01A | 12 ns | COMMON | 4.5V | |||||||||||||||||||||||||||||||||||||||||
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70V9389L7PRF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 128 | 70°C | -40°C | 3.3V | 2 | 20mm | RoHS Compliant | Contains Lead | No | 128 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 1.1 Mb | 83.3MHz | 14mm | 1.4mm | CMOS | 1 | 250mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 128 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 7 ns | 83MHz | 128kB | RAM, SDR, SRAM | 32b | 64KX18 | Synchronous | 18b | COMMON | 3V | ||||||||||||||||||||||||||||||||||
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7140LA25PFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2013 | no | Active | 3 (168 Hours) | 64 | EAR99 | 85°C | -40°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 8 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 220mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | INDUSTRIAL | 0.8mm | SRAMs | 5V | 3-STATE | 25 ns | RAM, SRAM | 20b | 1KX8 | Asynchronous | 0.004A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||
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MT49H16M18BM-25 IT:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2015 | Obsolete | 3 (168 Hours) | 144 | 1 | 18.5mm | ROHS3 Compliant | AUTO REFRESH | 144-TFBGA | 11mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.8V | MT49H16M18 | YES | 1mm | R-PBGA-B144 | 1.7V | Not Qualified | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 288Mb 16M x 18 | Volatile | 0.655mA | 1.7V~1.9V | 16MX18 | 18 | 301989888 bit | 400MHz | COMMON | DRAM | Parallel | 248 | ||||||||||||||||||||||||||||||||||||||||||
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71256S70TDB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Through Hole | Bulk | 2011 | Active | 125°C | -55°C | 5V | 1 | 37.72mm | RoHS Compliant | Contains Lead | No | 28 | CDIP | Parallel | 5.5V | 4.5V | 256 kb | 7.62mm | 3.56mm | 135mA | 70 ns | RAM, SRAM - Asynchronous | 15b | Asynchronous | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V9389L12PRF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2005 | no | Active | 3 (168 Hours) | 128 | 70°C | -40°C | 3.3V | 2 | 20mm | RoHS Compliant | Contains Lead | No | 128 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | TQFP | Parallel | 3.6V | 3V | 1.1 Mb | 33.3MHz | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 200mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 225 | 3.3V | 128 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 12 ns | 83MHz | 128kB | RAM, SDR, SRAM | 32b | 64KX18 | Synchronous | 18b | COMMON | 3V | |||||||||||||||||||||||||||||||||
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MT40A512M16JY-075E:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tray | Obsolete | 96 | 1 | 14mm | Non-RoHS Compliant | AUTO/SELF REFRESH | 96-TFBGA | 8mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR4 | SYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 1.2V | YES | 0.8mm | R-PBGA-B96 | 1.14V | 1.26V | 8Gb 512M x 16 | Volatile | 1.14V~1.26V | 512MX16 | 16 | 8589934592 bit | 1.33GHz | MULTI BANK PAGE BURST | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1041G18-15VXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tube | 2012 | Active | 3 (168 Hours) | 44 | 3A991.B.2.A | 28.575mm | ROHS3 Compliant | 44-BSOJ (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 3.7592mm | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-J44 | 1.65V | 2.2V | 4Mb 256K x 16 | Volatile | 1.65V~2.2V | 256KX16 | 16 | 4194304 bit | 15 ns | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1353F-100AC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2004 | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | 14mm | Non-RoHS Compliant | Contains Lead | 100 | FLOW-THROUGH ARCHITECTURE | 100-LQFP | not_compliant | 1.4mm | 20mm | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 8542.32.00.41 | 1 | e0 | TIN LEAD (800) | QUAD | 225 | 3.3V | 30 | CY7C1353 | 100 | 0.65mm | 3.135V | Not Qualified | 2.5/3.33.3V | 3.6V | 3-STATE | 8ns | 4.5Mb 256K x 18 | Volatile | 17b | 0.205mA | 3.135V~3.6V | 256KX18 | 4718592 bit | 100MHz | 0.04A | COMMON | 3.14V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||
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SST25VF080B-50-4I-QAE-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel (TR) | 2010 | SST25 | yes | Active | 1 (Unlimited) | 8 | 3.3V | 6mm | ROHS3 Compliant | No | 8 | 8-WDFN Exposed Pad | SPI, Serial | 8 Mb | 5mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 3V | SST25VF080B | 8 | YES | 1.27mm | 2.7V | 3.6V | 8Mb 1M x 8 | Non-Volatile | 2.7V~3.6V | 1 | 50MHz | 2.7V | FLASH | SPI | 10μs | |||||||||||||||||||||||||||||||||||||||||||
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IDT6116SA25TP | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2008 | 24 | EAR99 | 70°C | 0°C | 1 | 31.75mm | Non-RoHS Compliant | DIP | Parallel | not_compliant | 7.62mm | CMOS | 4.191mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | THROUGH-HOLE | 225 | 5V | 30 | 24 | COMMERCIAL | NO | 2.54mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.12mA | 2KX8 | 8 | 16384 bit | 0.002A | 25 ns | YES | COMMON | 4.5V | ||||||||||||||||||||||||||||||||||||||||
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7016L12JG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | yes | Active | 1 (Unlimited) | 68 | EAR99 | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Lead Free | No | 68 | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | PLCC | Parallel | 5.5V | 4.5V | 144 kb | 24mm | 3.63mm | CMOS | 4.57mm | 1 | 275mA | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | 68 | COMMERCIAL | SRAMs | 5V | 3-STATE | 12 ns | RAM, SRAM | 14b | 16KX9 | Asynchronous | 0.005A | 9b | COMMON | ||||||||||||||||||||||||||||||||||
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EDF8132A3MA-GD-F-R TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR3 | 8Gb 256M x 32 | Volatile | 1.14V~1.95V | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1020D-10ZSXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Surface Mount | Tray | 1996 | yes | Active | 3 (168 Hours) | 44 | 5V | 1 | 18.52mm | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | 512 kb | 100MHz | 1.044mm | 10.262mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 80mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 30 | CY7C1020 | 44 | 0.8mm | 5V | 3-STATE | 512Kb 32K x 16 | Volatile | 15b | 4.5V~5.5V | Asynchronous | 0.003A | 16b | COMMON | 2V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||
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7134LA20PDG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Bulk | 2013 | yes | Active | 1 (Unlimited) | 48 | EAR99 | 70°C | 0°C | 5V | 2 | 61.7mm | RoHS Compliant | Lead Free | No | 48 | PDIP | Parallel | 5.5V | 4.5V | 32 kb | 15.24mm | 3.8mm | CMOS | 1 | e3 | MATTE TIN | DUAL | THROUGH-HOLE | 260 | 5V | 48 | COMMERCIAL | NO | SRAMs | 5V | 3-STATE | 20 ns | 4kB | RAM, SDR, SRAM | 24b | 4KX8 | 0.0015A | COMMON | 2V | |||||||||||||||||||||||||||||||||||||
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EMFM432A1PH-DV-F-R TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V016SA20BFI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2011 | no | Active | 3 (168 Hours) | 48 | 85°C | -40°C | 3.3V | 1 | 7mm | RoHS Compliant | Contains Lead | No | 48 | Parallel | 3.6V | 3V | 1 Mb | 7mm | 1.4mm | CMOS | 1 | 120mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 48 | INDUSTRIAL | 0.75mm | SRAMs | 3-STATE | 20 ns | 128kB | RAM, SDR, SRAM - Asynchronous | 16b | Asynchronous | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||
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71V65603S150BQ | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2007 | no | Active | 3 (168 Hours) | 165 | 70°C | 0°C | 3.3V | 1 | 15mm | RoHS Compliant | Contains Lead | No | 165 | BURST COUNTER | Parallel | 3.465V | 3.135V | 9 Mb | 150MHz | 13mm | 1.2mm | CMOS | 1 | 325mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | COMMERCIAL | SRAMs | 3-STATE | 6.7 ns | 150MHz | 1.1MB | RAM, SDR, SRAM | 18b | 256KX36 | Synchronous | 0.04A | 36b | COMMON | |||||||||||||||||||||||||||||||||||
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MT29RZ4B2DZZHGSK-18 W.80E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 162-VFBGA | Surface Mount | -25°C~85°C TA | FLASH - NAND, DRAM - LPDDR2 | 4Gb 512M x 8 N 2G 64M x 32 LPDDR2 | Non-Volatile | 1.8V | 533MHz | FLASH, RAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3556S100BQI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | 3 (168 Hours) | 165 | 85°C | -40°C | Non-RoHS Compliant | 165 | Parallel | not_compliant | 100MHz | CMOS | SYNCHRONOUS | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 3.3V | INDUSTRIAL | YES | 1mm | SRAMs | Not Qualified | 3.3V | 3-STATE | RAM, SRAM | 0.255mA | 128KX36 | 36 | 4718592 bit | 0.045A | 5 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||
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MT53E256M16D1DS-046 AIT:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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EDFB164A1MA-JD-F-R TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TA | SDRAM - Mobile LPDDR3 | 32Gb 512M x 64 | Volatile | 1.14V~1.95V | 933MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS29GL128S-10DHB02-TR | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | GL-S | Active | 3 (168 Hours) | ROHS3 Compliant | 64-LBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 100ns | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S25FL116K0XWEN009 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | FL1-K | Obsolete | 1 (Unlimited) | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | Surface Mount | -40°C~125°C TA | FLASH - NOR | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 108MHz | FLASH | SPI - Quad I/O | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7024S20PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2000 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 5.5V | 4.5V | 64 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | YES | 0.5mm | SRAMs | 5V | 3-STATE | 20 ns | 8kB | RAM, SDR, SRAM | 24b | 4KX16 | 0.005A | COMMON | ||||||||||||||||||||||||||||||||||
| IS61NVP25636A-200TQLI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 2 (1 Year) | 100 | ROHS3 Compliant | 100 | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | QUAD | 2.5V | YES | 0.635mm | Not Qualified | 2.5V | 3-STATE | 3.1ns | 9Mb 256K x 36 | Volatile | 0.28mA | 2.375V~2.625V | 256KX36 | 36 | 9437184 bit | 200MHz | 0.05A | COMMON | 2.38V | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1414KV18-250BZXCT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | Active | 3 (168 Hours) | 165 | 1.8V | 2 | 15mm | ROHS3 Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 36 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II | 1.4mm | 1 | 730mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | CY7C1414 | 1mm | 1.7V | 1.9V | 3-STATE | 450 ps | 36Mb 1M x 36 | Volatile | 19b | 1.7V~1.9V | 1MX36 | 36 | Synchronous | 250MHz | 36b | SEPARATE | 1.7V | SRAM | Parallel |
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71V321L35J8 Integrated Device Technology (IDT)
Surface Mount 52 Pin Memory IC 16 kb kb 19mm mm 95mA mA 8b b
Price: 0.0000
RFQ -
-
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IDT71124S12YI8 Integrated Device Technology (IDT)
5V V 32 Pin Memory IC 20.955mm mm
Price: 0.0000
RFQ -
70V9389L7PRF Integrated Device Technology (IDT)
Surface Mount 128 Pin Memory IC 1.1 Mb kb 20mm mm 250mA mA 18b b
Price: 0.0000
RFQ -
7140LA25PFI8 Integrated Device Technology (IDT)
5V V Surface Mount 64 Pin Memory IC 8 kb kb 14mm mm 220mA mA 8b b
Price: 0.0000
RFQ -
MT49H16M18BM-25 IT:B Micron Technology Inc.
1.5/1.81.82.5V V Memory IC MT49H16M18 18.5mm mm
Price: 0.0000
RFQ -
71256S70TDB Integrated Device Technology (IDT)
Through Hole Memory IC 256 kb kb 37.72mm mm 135mA mA 8b b
Price: 0.0000
RFQ -
70V9389L12PRF8 Integrated Device Technology (IDT)
Surface Mount 128 Pin Memory IC 1.1 Mb kb 20mm mm 200mA mA 18b b
Price: 0.0000
RFQ -
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CY7C1353F-100AC Cypress Semiconductor Corp
2.5/3.33.3V V Surface Mount 100 Pin Memory IC CY7C1353 14mm mm
Price: 0.0000
RFQ -
SST25VF080B-50-4I-QAE-T Microchip Technology
SST25 8 Pin Memory IC SST25 Series SST25VF080B 8 Mb kb 6mm mm
Price: 0.0000
RFQ -
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7016L12JG8 Integrated Device Technology (IDT)
5V V Surface Mount 68 Pin Memory IC 144 kb kb 24mm mm 275mA mA 9b b
Price: 0.0000
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CY7C1020D-10ZSXI Cypress Semiconductor Corp
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71V016SA20BFI8 Integrated Device Technology (IDT)
Surface Mount 48 Pin Memory IC 1 Mb kb 7mm mm 120mA mA 16b b
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Surface Mount 165 Pin Memory IC 9 Mb kb 15mm mm 325mA mA 36b b
Price: 0.0000
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7024S20PF8 Integrated Device Technology (IDT)
5V V 100 Pin Memory IC 64 kb kb 14mm mm
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CY7C1414KV18-250BZXCT Cypress Semiconductor Corp
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RFQ



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