Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Drain to Source Resistance | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Breakdown Voltage | Input Capacitance | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXGH32N90B2 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2006 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*32N90 | 3 | R-PSFM-T3 | Not Qualified | 300W | 300W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 64A | 900V | 900V | POWER CONTROL | SILICON | 42 ns | 2.7V @ 15V, 32A | 690 ns | PT | 720V, 32A, 5 Ω, 15V | 89nC | 200A | 20ns/260ns | 2.6mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG4BC20FD-SPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 1997 | Obsolete | 1 (Unlimited) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | 60W | 37ns | 2V @ 15V, 9A | 600V | 16A | 480V, 9A, 50 Ω, 15V | 27nC | 64A | 43ns/240ns | 250μJ (on), 640μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGR40N60B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 25 Weeks | Through Hole | Tube | 2002 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | ISOPLUS247™ | Through Hole | -40°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*40N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 200W | 1 | ISOLATED | N-CHANNEL | Single | 70A | 600V | 600V | POWER CONTROL | SILICON | 55 ns | 2.1V @ 15V, 40A | 570 ns | 20V | 5V | 480V, 40A, 4.7 Ω, 15V | 116nC | 150A | 25ns/180ns | 2.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGPC50F | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2017 | Obsolete | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | FAST | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | Not Qualified | 200W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | MOTOR CONTROL | SILICON | 1.7V @ 15V, 39A | 600V | 70A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG7PH35U-EP | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2010 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | 3 | TO-247-3 | No SVHC | Through Hole | -55°C~175°C TJ | Standard | e3 | MATTE TIN OVER NICKEL | 250 | 30 | IRG7PH35 | Insulated Gate BIP Transistors | Not Qualified | 210W | 210W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 55A | 1.2kV | 2.2V | POWER CONTROL | SILICON | 1.9V | 45 ns | 2.2V @ 15V, 20A | 400 ns | Trench | 1200V | 6V | 105ns | 600V, 20A, 10 Ω, 15V | 130nC | 60A | 30ns/160ns | 1.06mJ (on), 620μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
AOK30B135W1 | Alpha & Omega Semiconductor Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 18 Weeks | Through Hole | Tube | 2011 | Alpha IGBT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 340W | 340W | TO-247 | 60A | 1.35kV | 2.2V | 2.2V @ 15V, 30A | 1350V | 60A | 600V, 30A, 10Ohm, 15V | 62nC | 200A | -/129ns | 1.47mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGH30N60A | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Through Hole | Tube | 1997 | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | HIGH SPEED | TO-247-3 | Through Hole | Standard | IXG*30N60 | R-PSFM-T3 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 200W | 100 ns | 2.6Ohm | 50A | 600V | 3V | 200ns | 60A | POWER CONTROL | 500 ns | SILICON | 600V | 300 ns | 3V @ 15V, 30A | 850 ns | 30V | 3 V | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXBX64N250 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2007 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | 7.300002g | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | 735W | 735W | 1 | COLLECTOR | N-CHANNEL | Single | 160 ns | 156A | 2.5kV | 2.5kV | POWER CONTROL | SILICON | 632 ns | 3V @ 15V, 64A | 397 ns | 25V | 2500V | 5V | 1250V, 128A, 1 Ω, 15V | 400nC | 600A | 49ns/232ns | |||||||||||||||||||||||||||||||||||||||||||||
|
IXGR32N170AH1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Bulk | 2004 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | UL RECOGNIZED | ISOPLUS247™ | No SVHC | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*32N170 | 3 | Not Qualified | 200W | 1 | NPN | ISOLATED | Single | 200W | 46 ns | 150 ns | 26A | 1.7kV | 1.7kV | POWER CONTROL | 270 ns | SILICON | 50ns | 4.2V | 107 ns | 5.2V @ 15V, 21A | 370 ns | NPT | 1700V | 1360V, 21A, 2.7 Ω, 15V | 155nC | 200A | 46ns/260ns | 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||
|
IXGR72N60A3H1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | ISOPLUS247™ | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | IXG*72N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | ISOLATED | N-CHANNEL | Single | 200W | 140 ns | 75A | 600V | 600V | POWER CONTROL | SILICON | 600V | 63 ns | 1.45V @ 15V, 60A | 885 ns | PT | 20V | 5V | 480V, 50A, 3 Ω, 15V | 230nC | 400A | 31ns/320ns | 1.4mJ (on), 3.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||
 |
IXGT60N60B2 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2003 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Lead Free | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*60N60 | 4 | R-PSSO-G2 | Not Qualified | 500W | 500W | 1 | COLLECTOR | N-CHANNEL | Single | 28 ns | 75A | 600V | 600V | POWER CONTROL | 160 ns | SILICON | 1.8V | 64 ns | 1.8V @ 15V, 50A | 550 ns | PT | 400V, 50A, 3.3 Ω, 15V | 170nC | 300A | 28ns/160ns | 1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
 |
IXXH140N65B4 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 28 Weeks | XPT™, GenX4™ | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 1200W | 105ns | 1.9V @ 15V, 120A | PT | 650V | 340A | 400V, 100A, 4.7 Ω, 15V | 250nC | 840A | 54ns/270ns | 5.75mJ (on), 2.67mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGT45N120 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 2001 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 75A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 96 ns | 2.5V @ 15V, 45A | 1400 ns | 20V | 1200V | 5V | 700ns | 960V, 45A, 5 Ω, 15V | 170nC | 180A | 55ns/370ns | 14mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
 |
IXA12IF1200PB | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.66mm | ROHS3 Compliant | 3 | TO-220-3 | No SVHC | 16mm | 4.82mm | Through Hole | -40°C~150°C TJ | Standard | e3 | PURE TIN | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 85W | 1 | TO-220AB | N-CHANNEL | Single | 85W | 350 ns | 20A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 2.1V | 110 ns | 2.1V @ 15V, 10A | 350 ns | PT | 20V | 1200V | 6.5V | 600V, 10A, 100 Ω, 15V | 27nC | 1.1mJ (on), 1.1mJ (off) | |||||||||||||||||||||||||||||||||||||||||
|
IXGA20N120B3-TRL | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 30 Weeks | GenX3™ | Active | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | 180W | 31ns | 3.1V @ 15V, 16A | PT | 1200V | 36A | 600V, 16A, 15 Ω, 15V | 51nC | 80A | 16ns/150ns | 920μJ (on), 560μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NGTB25N120LWG | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 192W | TO-247 | 2.3V @ 15V, 25A | Trench Field Stop | 1.2V | 50A | 600V, 25A, 10Ohm, 15V | 200nC | 200A | 89ns/235ns | 3.4mJ (on), 800μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGP24N120C3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED | TO-220-3 | unknown | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | e3 | PURE TIN | NOT SPECIFIED | NOT SPECIFIED | IXG*24N120 | 3 | R-PSFM-T3 | Not Qualified | 250W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 250W | 48A | 1.2kV | 4.2V | POWER CONTROL | SILICON | 3.6V | 41 ns | 4.2V @ 15V, 20A | 430 ns | PT | 1200V | 600V, 20A, 5 Ω, 15V | 79nC | 96A | 16ns/93ns | 1.16mJ (on), 470μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
|
FGY60T120SQDN | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Tube | yes | Active | Not Applicable | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 517W | 1.95V @ 15V, 60A | 1200V | 120A | 600V, 60A, 10 Ω, 15V | 311nC | 240A | 52ns/296ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGTV00TK65DGC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-3PFM, SC-93-3 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 94W | 1 | SINGLE WITH BUILT-IN DIODE | ISOLATED | N-CHANNEL | 102ns | POWER CONTROL | SILICON | 62 ns | 1.9V @ 15V, 50A | 247 ns | Trench Field Stop | 650V | 45A | 400V, 50A, 10 Ω, 15V | 104nC | 200A | 41ns/142ns | 1.17mJ (on), 940μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGH48N60C3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | IXG*48N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 300W | 75A | 600V | 600V | POWER CONTROL | SILICON | 1.96nF | 2.3V | 45 ns | 2.5V @ 15V, 30A | 187 ns | PT | 20V | 5.5V | 400V, 30A, 3 Ω, 15V | 77nC | 250A | 19ns/60ns | 410μJ (on), 230μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
 |
IGC70T120T8RL | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Bulk | 2015 | no | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | Standard | NOT SPECIFIED | NOT SPECIFIED | 2.07V @ 15V, 75A | Trench Field Stop | 1200V | 225A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
APT50GN120L2DQ2G | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 29 Weeks | Through Hole | Tube | 1999 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 26.49mm | RoHS Compliant | Lead Free | 134A | No | 3 | HIGH RELIABILITY | TO-264-3, TO-264AA | 5.21mm | 20.5mm | Through Hole | 10.6g | -55°C~150°C TJ | 1.2kV | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 543W | 1 | COLLECTOR | N-CHANNEL | Single | 28 ns | 134A | 1.2kV | 1.2kV | POWER CONTROL | 320 ns | SILICON | 1.7V | 55 ns | 2.1V @ 15V, 50A | 600 ns | NPT, Trench Field Stop | 1200V | 134A | 6.5V | 800V, 50A, 2.2 Ω, 15V | 315nC | 150A | 28ns/320ns | 4495μJ (off) | |||||||||||||||||||||||||||||||||||||
|
SIGC14T60NCX7SA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 15A | NPT | 600V | 15A | 300V, 15A, 18Ohm, 15V | 45A | 21ns/110ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGP8NC60KD | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | Through Hole | Tube | PowerMESH™ | Active | 1 (Unlimited) | 3 | EAR99 | 10.4mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | 9.15mm | 4.6mm | Through Hole | -55°C~150°C TJ | Standard | STGP8 | 3 | Insulated Gate BIP Transistors | 65W | 1 | TO-220AB | N-CHANNEL | Single | 23.5ns | 7A | 600V | 600V | POWER CONTROL | SILICON | 23 ns | 2.75V @ 15V, 3A | 242 ns | 20V | 15A | 6.5V | 390V, 3A, 10 Ω, 15V | 19nC | 30A | 17ns/72ns | 55μJ (on), 85μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
|
IRGB4710DPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 2016 | Obsolete | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FGL40N120ANTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2007 | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | No SVHC | Through Hole | 6.756g | -55°C~150°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | 500W | 500W | 1 | N-CHANNEL | Single | 500mW | 15 ns | 64A | 1.2kV | 1.2kV | MOTOR CONTROL | 110 ns | SILICON | 20ns | 3.2V | 45 ns | 3.2V @ 15V, 40A | 165 ns | NPT | 1200V | 600V, 40A, 5 Ω, 15V | 220nC | 160A | 15ns/110ns | 2.3mJ (on), 1.1mJ (off) | |||||||||||||||||||||||||||||||||||||||||
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RGT30NS65DGTL | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | not_compliant | 5mm | Surface Mount | 1.946308g | -40°C~175°C TJ | Standard | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 133W | 1 | COLLECTOR | N-CHANNEL | Single | 133W | 18 ns | 650V | 55 ns | 30A | 650V | 650V | 175°C | POWER CONTROL | 64 ns | SILICON | 1.65V | 40 ns | 2.1V @ 15V, 15A | 204 ns | Trench Field Stop | 30A | 400V, 15A, 10 Ω, 15V | 32nC | 45A | 18ns/64ns | |||||||||||||||||||||||||||||||||||||||||||
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IRG4BC15MDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2004 | Obsolete | 1 (Unlimited) | 150°C | -55°C | 10.5156mm | RoHS Compliant | Lead Free | 14A | No | 3 | TO-220-3 | 15.24mm | 4.699mm | Through Hole | 6.000006g | -55°C~150°C TJ | 600V | Standard | 49W | 49W | Single | 49W | TO-220AB | 28 ns | 14A | 600V | 2.3V | 38ns | 2.3V | 2.3V @ 15V, 8.6A | 600V | 14A | 480V, 8.6A, 75Ohm, 15V | 46nC | 28A | 21ns/540ns | 320μJ (on), 1.93mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRGS10B60KDTRLP | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 260.39037mg | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | IRGS10B60KDPBF | R-PSSO-G2 | 156W | 156W | 1 | COLLECTOR | N-CHANNEL | Single | 600V | 90 ns | 22A | 600V | 2.2V | MOTOR CONTROL | SILICON | 50 ns | 2.2V @ 15V, 10A | 276 ns | NPT | 400V, 10A, 47 Ω, 15V | 38nC | 44A | 30ns/230ns | 140μJ (on), 250μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
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IRG4BC20W-SPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Surface Mount | Tube | 2000 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.668mm | RoHS Compliant | Lead Free | 13A | No | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 9.652mm | 4.826mm | Surface Mount | -55°C~150°C TJ | 600V | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | Insulated Gate BIP Transistors | 60W | 1 | COLLECTOR | N-CHANNEL | Dual | 60W | 13A | 600V | 2.6V | POWER CONTROL | SILICON | 14ns | 2.6V | 36 ns | 2.6V @ 15V, 6.5A | 300 ns | 20V | 6V | 96ns | 480V, 6.5A, 50 Ω, 15V | 26nC | 52A | 22ns/110ns | 60μJ (on), 80μJ (off) |
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