
Items : %s%s
Transistor Optical Sensors
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Part Status | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Number of Pins | Package / Case | Reach Compliance Code | Mounting Type | Operating Temperature | Sensing Method | Type | Forward Current | Touchscreen | Response Time | Sensing Distance | Power Dissipation | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time | Fall Time (Typ) | Output Configuration | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Wavelength | Current - DC Forward (If) (Max) |
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RPI-222N1 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Through Hole | Bulk | 2005 | Not For New Designs | 1 (Unlimited) | ROHS3 Compliant | Module, Slotted | Through Hole | ||||||||||||||||||||||||||
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OPB865P55 | TT Electronics/Optek Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Chassis Mount | Bulk | 2012 | Obsolete | 1 (Unlimited) | 85°C | -40°C | RoHS Compliant | 4 | Module, Pre-Wired | Chassis Mount | -40°C~85°C | Through-Beam | Unamplified | 50mA | Infrared (IR) | 0.125 (3.18mm) | 100mW | 30mA | 30V | 30V | Phototransistor | 30V | 30mA | 890 nm | 50mA | ||||||||
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PM-K24-C3 | Panasonic Industrial Automation Sales | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Chassis Mount | Bulk | PM-24 | Obsolete | 1 (Unlimited) | RoHS Compliant | Module, Wire Leads, Slot Type | unknown | Chassis Mount | -25°C~55°C | Through-Beam | Unamplified | 20μs | 0.197 (5mm) | NPN - Dark-ON/Light-ON - Selectable | 30V | 15mA | 50mA | |||||||||||||||
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OPB871N55TX | TT Electronics/Optek Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Chassis Mount | Bulk | 2012 | Obsolete | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | Module, Pre-Wired | Chassis Mount | -40°C~85°C | Through-Beam | Unamplified | 50mA | Infrared (IR) | 0.125 (3.18mm) | 100mW | 30mA | 30V | 50V | 20μs | 20 μs | Phototransistor | 30V | 30mA | 890 nm | 50mA |