Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | Current | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Max Dual Supply Voltage | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Voltage (Vdss) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SKW07N120FKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2008 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | LOW CONDUCTION LOSS | TO-247-3 | compliant | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 125W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | COLLECTOR | N-CHANNEL | 60ns | POWER CONTROL | SILICON | 56 ns | 3.6V @ 15V, 8A | 520 ns | NPT | 1200V | 16.5A | 800V, 8A, 47 Ω, 15V | 70nC | 27A | 27ns/440ns | 1mJ | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGS4610DPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2001 | Obsolete | 1 (Unlimited) | EAR99 | 10.67mm | RoHS Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | 260.39037mg | -40°C~175°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | Insulated Gate BIP Transistors | 77W | 77W | N-CHANNEL | Single | 74 ns | 16A | 600V | 2V | 1.7V | 2V @ 15V, 6A | 20V | 6.5V | 400V, 6A, 47 Ω, 15V | 13nC | 18A | 27ns/75ns | 56μJ (on), 122μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IHW20N135R5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2013 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 288W | 288W | 1 | Halogen Free | N-CHANNEL | Single | 40A | 1.35kV | 1.35kV | POWER CONTROL | SILICON | 1.85V @ 15V, 20A | 450 ns | 1350V | 600V, 20A, 10 Ω, 15V | 170nC | 60A | -/235ns | 950μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
|
IGW30N60TPXKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2006 | TrenchStop™ | yes | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 200W | 200W | 1 | SINGLE | N-CHANNEL | 53A | 600V | 1.8V | POWER CONTROL | SILICON | 38 ns | 1.8V @ 15V, 30A | 279 ns | Trench Field Stop | 400V, 30A, 10.5 Ω, 15V | 130nC | 90A | 15ns/179ns | 710μJ (on), 420μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
SIGC42T60NCX1SA5 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | 2016 | Last Time Buy | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | Die | Surface Mount | -55°C~150°C | Standard | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | S-XUUC-N4 | Not Qualified | 1 | Halogen Free | N-CHANNEL | Single | 600V | 600V | POWER CONTROL | SILICON | 600V | 55 ns | 2.5V @ 15V, 50A | 160 ns | NPT | 50A | 300V, 50A, 3.3 Ω, 15V | 150A | 43ns/130ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGT15N120C | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2000 | Lightspeed™ | no | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | LOW SWITCHING LOSSES | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Surface Mount | -55°C~150°C TJ | Standard | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*15N120 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 30A | 1.2kV | 3.8V | POWER CONTROL | SILICON | 43 ns | 3.8V @ 15V, 15A | 470 ns | 20V | 1200V | 5V | 190ns | 960V, 15A, 10 Ω, 15V | 69nC | 60A | 25ns/150ns | 1.05mJ (off) | |||||||||||||||||||||||||||||||||||||||||
|
IRGS8B60KTRLPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.668mm | RoHS Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.699mm | 9.652mm | Surface Mount | 260.39037mg | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | IRGS8B60KPBF | R-PSSO-G2 | Insulated Gate BIP Transistors | 167W | 1 | COLLECTOR | N-CHANNEL | Single | 167W | 600V | 28A | 600V | 2.2V | 26ns | MOTOR CONTROL | SILICON | 43 ns | 2.2V @ 15V, 8A | 220 ns | NPT | 20V | 5.5V | 56ns | 400V, 8A, 50 Ω, 15V | 29nC | 34A | 23ns/140ns | 160μJ (on), 160μJ (off) | |||||||||||||||||||||||||||||||||||||
 |
NGTB25N120FL2WAG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 23 Weeks | LAST SHIPMENTS (Last Updated: 2 days ago) | Tube | 2016 | yes | Obsolete | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-247-4 | Through Hole | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 385W | 136ns | 2.4V @ 15V, 25A | Field Stop | 1200V | 100A | 600V, 50A, 10 Ω, 15V | 181nC | 17ns/113ns | 990μJ (on), 660μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGW30M65DF2 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | ACTIVE (Last Updated: 8 months ago) | Through Hole | Tube | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | STGW30 | 258W | 258W | 140 ns | 60A | 650V | 2V | 2V @ 15V, 30A | Trench Field Stop | 400V, 30A, 10 Ω, 15V | 80nC | 120A | 31.6ns/115ns | 300μJ (on), 960μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGB6B60KDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2004 | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.54mm | ROHS3 Compliant | Lead Free | 13A | No | 3 | TO-220-3 | No SVHC | 15.24mm | 4.69mm | Through Hole | -55°C~150°C TJ | 600V | Standard | Insulated Gate BIP Transistors | 90W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 90W | 70 ns | 13A | 600V | 2.2V | MOTOR CONTROL | SILICON | 17ns | 1.8V | 45 ns | 2.2V @ 15V, 5A | 258 ns | NPT | 20V | 5.5V | 27ns | 400V, 5A, 100 Ω, 15V | 18.2nC | 26A | 25ns/215ns | 110μJ (on), 135μJ (off) | ||||||||||||||||||||||||||||||||||||||
|
STGW40S120DF3 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 41 Weeks | Surface Mount | Tube | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | No SVHC | Through Hole | -55°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | STGW40 | R-PSFM-T3 | 468W | 468W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 355 ns | 80A | 1.2kV | 2.15V | POWER CONTROL | SILICON | 50 ns | 2.15V @ 15V, 40A | 158.46 ns | Trench Field Stop | 1200V | 600V, 40A, 15 Ω, 15V | 129nC | 160A | 35ns/148ns | 1.43mJ (on), 3.83mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
|
STGW40H120DF2 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 32 Weeks | ACTIVE (Last Updated: 7 months ago) | Through Hole | Tube | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | 38.000013g | -55°C~175°C TJ | Standard | STGW40 | 468W | 468W | Single | 488 ns | 80A | 1.2kV | 1.2kV | 2.1V | 2.6V @ 15V, 40A | Trench Field Stop | 1200V | 600V, 40A, 10 Ω, 15V | 187nC | 160A | 18ns/152ns | 1mJ (on), 1.32mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SKB10N60AATMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2008 | no | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | Contains Lead | No | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | GULL WING | 3 | R-PSSO-G2 | 92W | 92W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 220 ns | 20A | 600V | 600V | POWER CONTROL | SILICON | 40 ns | 2.4V @ 15V, 10A | 224 ns | NPT | 400V, 10A, 25 Ω, 15V | 52nC | 40A | 28ns/178ns | 320μJ | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
IKZ75N65NH5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2008 | TrenchStop™ 5 | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | 4 | TO-247-4 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 395W | 395W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | Halogen Free | N-CHANNEL | 59 ns | 90A | 650V | 650V | POWER CONTROL | SILICON | 71 ns | 2.1V @ 15V, 75A | 485 ns | Trench | 400V, 37.5A, 27 Ω, 15V | 166nC | 300A | 52ns/412ns | 880μJ (on), 520μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
 |
AOTF20B65M2 | Alpha & Omega Semiconductor Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 18 Weeks | Through Hole | Tube | 2009 | Alpha IGBT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | 45W | 45W | TO-220 | 292 ns | 40A | 650V | 2.15V | 2.15V @ 15V, 20A | 650V | 40A | 400V, 20A, 15Ohm, 15V | 46nC | 60A | 26ns/123ns | 580μJ (on), 280μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NGTB50N60FWG | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Last Time Buy | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
75099 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SIGC158T120R3LEX1SA2 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Bulk | 2014 | yes | Active | 1 (Unlimited) | EAR99 | 150°C | -40°C | ROHS3 Compliant | Die | Surface Mount | Standard | NOT SPECIFIED | NOT SPECIFIED | YES | Insulated Gate BIP Transistors | N-CHANNEL | 1.2kV | 1.2kV | 1.2kV | 2.1V @ 15V, 150A | Trench Field Stop | 20V | 1200V | 6.5V | 450A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGP50B60PD1PBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Through Hole | Tube | 2004 | Last Time Buy | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | HIGH RELIABILITY, LOW CONDUCTION LOSS | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | Standard | Insulated Gate BIP Transistors | 390W | 1 | TO-247AC | COLLECTOR | N-CHANNEL | Single | 390W | 30 ns | 42 ns | 75A | 600V | 2.85V | POWER CONTROL | 130 ns | SILICON | 10ns | 2.35V | 39 ns | 2.85V @ 15V, 50A | 161 ns | NPT | 20V | 5V | 20ns | 390V, 33A, 3.3 Ω, 15V | 205nC | 150A | 30ns/130ns | 255μJ (on), 375μJ (off) | ||||||||||||||||||||||||||||||||||
|
IRG4BC30W-SPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Surface Mount | Tube | 1998 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.668mm | RoHS Compliant | Contains Lead, Lead Free | 23A | No | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 4.826mm | Surface Mount | -55°C~150°C TJ | 600V | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | IRG4BC30W-SPBF | R-PSSO-G2 | Insulated Gate BIP Transistors | 100W | 1 | COLLECTOR | N-CHANNEL | Dual | 100W | 23A | 600V | 2.7V | POWER CONTROL | SILICON | 16ns | 2.1V | 41 ns | 2.7V @ 15V, 12A | 300 ns | 20V | 6V | 100ns | 480V, 12A, 23 Ω, 15V | 51nC | 92A | 25ns/99ns | 130μJ (on), 130μJ (off) | |||||||||||||||||||||||||||||||||
 |
HGT1S10N120BNS | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 44 Weeks | ACTIVE, NOT REC (Last Updated: 1 day ago) | Surface Mount, Through Hole | Tube | yes | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 35A | No | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 1.31247g | -55°C~150°C TJ | 1.2kV | Standard | 35A | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | 260 | 30 | HGT1S10N120 | R-PSSO-G2 | 312W | 1.2kV | 1 | COLLECTOR | N-CHANNEL | Single | 298W | 1.2kV | 35A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 2.7V | 32 ns | 2.7V @ 15V, 10A | 330 ns | NPT | 1200V | 55A | 960V, 10A, 10 Ω, 15V | 100nC | 80A | 23ns/165ns | 320μJ (on), 800μJ (off) | |||||||||||||||||||||||||||||||
 |
HGTG20N60A4D | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE, NOT REC (Last Updated: 2 days ago) | Through Hole | Tube | 2011 | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | 70A | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | No SVHC | 20.82mm | 4.82mm | Through Hole | 6.39g | -55°C~150°C TJ | 600V | Standard | 8541.29.00.95 | e3 | Tin (Sn) | HGTG20N60 | 290W | 1 | COLLECTOR | N-CHANNEL | Single | 290W | 15 ns | 600V | 35 ns | 70A | 600V | 600V | POWER CONTROL | 73 ns | SILICON | 12ns | 1.8V | 28 ns | 2.7V @ 15V, 20A | 160 ns | 390V, 20A, 3 Ω, 15V | 142nC | 280A | 15ns/73ns | 105μJ (on), 150μJ (off) | ||||||||||||||||||||||||||||||||||
 |
IRG7PG35U-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Through Hole | Tube | 2014 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | TO-247-3 | unknown | Through Hole | -55°C~175°C TJ | Standard | 210W | 210W | Single | 55A | 1kV | 2.2V | 2.2V @ 15V, 20A | Trench | 1000V | 600V, 20A, 10 Ω, 15V | 85nC | 60A | 30ns/160ns | 1.06mJ (on), 620μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGH60N60C2 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2003 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | IXG*60N60 | 3 | 480W | 480W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 75A | 600V | 600V | POWER CONTROL | SILICON | 43 ns | 2.5V @ 15V, 50A | 210 ns | PT | 400V, 50A, 2 Ω, 15V | 146nC | 300A | 18ns/95ns | 480μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
RJH60D2DPP-M0#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Through Hole | 150°C TJ | Standard | RJH60D | 3 | Insulated Gate BIP Transistors | 27.2W | 34W | N-CHANNEL | Single | 32 ns | 100 ns | 25A | 600V | 2.2V | 85 ns | 2.2V | 2.2V @ 15V, 12A | Trench | 300V, 12A, 5 Ω, 15V | 19nC | 32ns/85ns | 100μJ (on), 160μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXBH12N300 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Through Hole | Tube | 2009 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 160W | 160W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 1.4 μs | 30A | 3kV | 3.2V | POWER CONTROL | SILICON | 460 ns | 3.2V @ 15V, 12A | 705 ns | 20V | 3000V | 5V | 62nC | 100A | |||||||||||||||||||||||||||||||||||||||||||||
|
IRG4BC40W-S | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2004 | Obsolete | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 160W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 160W | POWER CONTROL | SILICON | 48 ns | 2.5V @ 15V, 20A | 294 ns | 20V | 600V | 40A | 6V | 110ns | 480V, 20A, 10 Ω, 15V | 98nC | 160A | 27ns/100ns | 110μJ (on), 230μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
|
IKB30N65EH5ATMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tape & Reel (TR) | TrenchStop™ 5 | Active | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -40°C~175°C TJ | Standard | 188W | 75ns | 2.1V @ 15V, 30A | Trench Field Stop | 650V | 55A | 400V, 30A, 22 Ω, 15V | 70nC | 90A | 24ns/159ns | 870μJ (on), 300μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRG4BC10SD-LPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2004 | Obsolete | 1 (Unlimited) | RoHS Compliant | Lead Free | 14A | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | unknown | Through Hole | -55°C~150°C TJ | 600V | Standard | 38W | Single | 38W | 28 ns | 14A | 600V | 1.8V | 32ns | 1.8V | 1.8V @ 15V, 8A | 480V, 8A, 100 Ω, 15V | 15nC | 18A | 76ns/815ns | 310μJ (on), 3.28mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
STGF3NC120HD | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | Through Hole | Tube | PowerMESH™ | Active | 1 (Unlimited) | 3 | EAR99 | 10.4mm | ROHS3 Compliant | Lead Free | 3A | No | 3 | TO-220-3 Full Pack | No SVHC | 16.4mm | 4.6mm | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | e3 | Matte Tin (Sn) - annealed | STGF3 | 3 | Insulated Gate BIP Transistors | 25W | 1 | ISOLATED | N-CHANNEL | Single | 25W | 51 ns | 6A | 1.2kV | 1.2kV | GENERAL PURPOSE SWITCHING | SILICON | 3.5ns | 2.8V | 18.5 ns | 2.8V @ 15V, 3A | 680 ns | 20V | 1200V | 5V | 800V, 3A, 10 Ω, 15V | 24nC | 20A | 15ns/118ns | 236μJ (on), 290μJ (off) |
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