Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Max Dual Supply Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Voltage (Vdss) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RJH60D5DPM-00#T1 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-3PFM, SC-93-3 | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60D | 3 | 45W | 45W | 100 ns | 75A | 600V | 2.2V | 2.2V @ 15V, 37A | Trench | 300V, 37A, 5 Ω, 15V | 78nC | 50ns/135ns | 650μJ (on), 270μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGR12N60C | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2002 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 247 | ISOPLUS247™ | Through Hole | -40°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*12N60 | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 55W | 55W | 1 | ISOLATED | N-CHANNEL | Single | 15A | 600V | 600V | MOTOR CONTROL | SILICON | 40 ns | 2.7V @ 15V, 12A | 170 ns | 20V | 5V | 180ns | 480V, 12A, 18 Ω, 15V | 32nC | 48A | 20ns/60ns | 90μJ (off) | |||||||||||||||||||||||||||||||||||
|
IXGR120N60B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2004 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 247 | ISOPLUS247™ | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*120N60 | 3 | R-PSIP-T3 | Not Qualified | 520W | 520W | 1 | ISOLATED | N-CHANNEL | Single | 156A | 600V | 600V | POWER CONTROL | SILICON | 2.1V | 120 ns | 2.1V @ 15V, 100A | 540 ns | PT | 480V, 100A, 2.4 Ω, 15V | 350nC | 300A | 60ns/200ns | 2.4mJ (on), 5.5mJ (off) | |||||||||||||||||||||||||||||||||||||
 |
IXGH24N120C3H1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*24N120 | 3 | Not Qualified | 250W | 250W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 70 ns | 48A | 1.2kV | 4.2V | POWER CONTROL | SILICON | 51 ns | 4.2V @ 15V, 20A | 430 ns | PT | 1200V | 600V, 20A, 5 Ω, 15V | 79nC | 96A | 16ns/93ns | 1.16mJ (on), 470μJ (off) | |||||||||||||||||||||||||||||||||||
|
IXYH40N120B3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 480W | 480W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 22 ns | 100 ns | 86A | 1.2kV | 2.9V | POWER CONTROL | 177 ns | SILICON | 84 ns | 2.9V @ 15V, 40A | 411 ns | 20V | 1200V | 5V | 600V, 40A, 10 Ω, 15V | 87nC | 180A | 22ns/177ns | 2.7mJ (on), 1.6mJ (off) | |||||||||||||||||||||||||||||||||||
 |
78124 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC28T60EX1SA3 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | TrenchStop™ | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -40°C~175°C TJ | Standard | Die | 1.85V @ 15V, 50A | Trench Field Stop | 600V | 50A | 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IRGP4660D-EPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | No | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 330W | 330W | Single | 134W | 115 ns | 100A | 600V | 1.9V | 1.9V | 1.9V @ 15V, 48A | 400V, 48A, 10 Ω, 15V | 140nC | 144A | 60ns/145ns | 625μJ (on), 1.28mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXYH75N65C3H1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Through Hole | Tube | 2014 | GenX3™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | 38.000013g | -55°C~175°C TJ | Standard | 750W | 750W | Single | 150 ns | 170A | 650V | 2.3V | 1.8V | 2.3V @ 15V, 60A | PT | 400V, 60A, 3 Ω, 15V | 123nC | 360A | 27ns/93ns | 2.8mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IGA03N120H2XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2006 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | Standard | 29W | PG-TO220-3 | 2.8V @ 15V, 3A | 1200V | 3A | 800V, 3A, 82Ohm, 15V | 8.6nC | 9A | 9.2ns/281ns | 290μJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IKP08N65F5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 18 Weeks | Through Hole | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Unknown | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Insulated Gate BIP Transistors | 70W | Halogen Free | N-CHANNEL | Single | 70W | 41 ns | 18A | 650V | 1.6V | 1.6V | 2.1V @ 15V, 8A | 20V | 4.8V | 400V, 4A, 48 Ω, 15V | 22nC | 24A | 10ns/116ns | 70μJ (on), 20μJ (off) | ||||||||||||||||||||||||||||||||||||||||
|
SIGC12T60SNCX1SA3 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2016 | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | Die | Surface Mount | -55°C~150°C TJ | Standard | UPPER | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | YES | S-XUUC-N2 | Not Qualified | 1 | SINGLE | Halogen Free | N-CHANNEL | 600V | 600V | POWER CONTROL | SILICON | 600V | 50 ns | 2.5V @ 15V, 10A | 329 ns | NPT | 10A | 400V, 10A, 25 Ω, 15V | 30A | 29ns/266ns | ||||||||||||||||||||||||||||||||||||||||||||
 |
IKQ75N120CH3XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2014 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 938W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | POWER CONTROL | SILICON | 81 ns | 2.35V @ 15V, 75A | 454 ns | 1200V | 150A | 600V, 75A, 6 Ω, 15V | 370nC | 300A | 34ns/282ns | 6.4mJ (on), 2.8mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||
|
NGTD14T65F2SWK | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | ACTIVE (Last Updated: 1 week ago) | Tape & Reel (TR) | 2016 | yes | Active | ROHS3 Compliant | Lead Free | Die | Surface Mount | -55°C~175°C TJ | Standard | 2V @ 15V, 35A | Trench Field Stop | 650V | 120A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRG7CH54K10EF-R | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 16 Weeks | Bulk | 2012 | Active | Not Applicable | ROHS3 Compliant | Die | Surface Mount | -40°C~175°C TJ | Standard | 1.5V @ 15V, 10A | 1200V | 600V, 50A, 5 Ω, 15V | 290nC | 75ns/305ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGA180N30DTU | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | yes | Obsolete | 3 (168 Hours) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-3P-3, SC-65-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e3 | MATTE TIN | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 2 | NO | R-PSFM-T3 | COMMERCIAL | 480W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 21ns | MOTOR CONTROL | SILICON | 260 ns | 1.4V @ 15V, 40A | 330 ns | 300V | 180A | 185nC | 450A | |||||||||||||||||||||||||||||||||||||||||||||
 |
IGB50N65S5ATMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tape & Reel (TR) | 2008 | TrenchStop™ 5 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -40°C~175°C TJ | Standard | 270W | 1.7V @ 15V, 50A | Trench Field Stop | 650V | 80A | 400V, 50A, 8.2 Ω, 15V | 120nC | 200A | 20ns/139ns | 1.23mJ (on), 740μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXXH80N65B4D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 28 Weeks | XPT™, GenX4™ | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 625W | 100ns | 2.1V @ 15V, 80A | PT | 650V | 180A | 400V, 80A, 3 Ω, 15V | 120nC | 430A | 26ns/112ns | 3.36mJ (on), 1.83mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NGTB50N60FL2WG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | LAST SHIPMENTS (Last Updated: 4 days ago) | Through Hole | Tube | 2014 | yes | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | e3 | Tin (Sn) | Insulated Gate BIP Transistors | 417W | 417W | N-CHANNEL | Single | 94 ns | 100A | 600V | 2V | 2V @ 15V, 50A | Trench Field Stop | 20V | 6.5V | 400V, 50A, 10 Ω, 15V | 220nC | 200A | 100ns/237ns | 1.5mJ (on), 460μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
APT25GR120BSCD10 | Microsemi | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 22 Weeks | Through Hole | Tube | 2001 | Obsolete | 1 (Unlimited) | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 521W | 521W | N-CHANNEL | 75A | 1.2kV | 3.2V | 3.2V @ 15V, 25A | NPT | 30V | 1200V | 6.5V | 600V, 25A, 4.3 Ω, 15V | 203nC | 100A | 16ns/122ns | 434μJ (on), 466μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRG4BC10SD-SPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tube | 2000 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.668mm | RoHS Compliant | Lead Free | 14A | No | 3 | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.699mm | 9.65mm | Surface Mount | -55°C~150°C TJ | 600V | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 38W | 1 | COLLECTOR | N-CHANNEL | Single | 38W | 28 ns | 14A | 600V | 1.8V | POWER CONTROL | SILICON | 36ns | 1.58V | 106 ns | 1.8V @ 15V, 8A | 1780 ns | 480V, 8A, 100 Ω, 15V | 15nC | 18A | 76ns/815ns | 310μJ (on), 3.28mJ (off) | |||||||||||||||||||||||||||||
|
IRG7PK42UD1PBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | Not Applicable | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SIGC25T60NCX7SA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -55°C~150°C TJ | Standard | Die | 2.5V @ 15V, 30A | NPT | 600V | 30A | 300V, 30A, 8.2Ohm, 15V | 90A | 21ns/110ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FGH20N60UFDTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.6mm | ROHS3 Compliant | Lead Free | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | No SVHC | 20.6mm | 4.7mm | Through Hole | 6.39g | -55°C~150°C TJ | Standard | 8541.29.00.95 | e3 | Tin (Sn) | Insulated Gate BIP Transistors | 165W | 165W | 1 | TO-247AB | COLLECTOR | N-CHANNEL | Single | 13 ns | 34 ns | 40A | 600V | 600V | POWER CONTROL | 87 ns | SILICON | 600V | 29 ns | 2.4V @ 15V, 20A | 155 ns | Field Stop | 20V | 6.5V | 64ns | 400V, 20A, 10 Ω, 15V | 63nC | 60A | 13ns/87ns | 380μJ (on), 260μJ (off) | |||||||||||||||||||||||||
|
IXYP20N65B3D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 24 Weeks | XPT™, GenX3™ | Active | TO-220-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 230W | 25ns | 2.1V @ 15V, 20A | PT | 650V | 58A | 400V, 20A, 20 Ω, 15V | 29nC | 108A | 12ns/103ns | 500μJ (on), 450μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
RGT00TS65DGC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 17 Weeks | 2016 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 277W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 54ns | POWER CONTROL | SILICON | 110 ns | 2.1V @ 15V, 50A | 225 ns | Trench Field Stop | 650V | 85A | 400V, 50A, 10 Ω, 15V | 94nC | 150A | 42ns/137ns | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXGA7N60C | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2003 | HiPerFAST™, Lightspeed™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 1.59999g | -55°C~150°C TJ | Standard | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | IXG*7N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 54W | 54W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 14A | 600V | 600V | POWER CONTROL | SILICON | 2.7V | 25 ns | 2.7V @ 15V, 7A | 205 ns | PT | 20V | 5.5V | 480V, 7A, 22 Ω, 15V | 25nC | 30A | 9ns/65ns | 70μJ (on), 120μJ (off) | ||||||||||||||||||||||||||||||||||
 |
IKW40N65ES5XKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2008 | TrenchStop™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 230W | 230W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 73 ns | 79A | 650V | 650V | POWER CONTROL | SILICON | 36 ns | 1.7V @ 15V, 40A | 204 ns | Trench | 400V, 40A, 10 Ω, 15V | 95nC | 160A | 19ns/130ns | 860μJ (on), 400μJ (off) | ||||||||||||||||||||||||||||||||||||||||
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IXGH30N60B | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*30N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 200W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 25 ns | 60A | 600V | 600V | POWER CONTROL | 130 ns | SILICON | 25 ns | 1.8V @ 15V, 30A | 200 ns | 20V | 5V | 190ns | 480V, 30A, 4.7 Ω, 15V | 125nC | 120A | 25ns/130ns | 1.3mJ (off) | |||||||||||||||||||||||||||||||||
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STGP19NC60W | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | PowerMESH™ | Obsolete | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 | Through Hole | -65°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | STGP19 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 130W | 130W | 1 | TO-220AB | N-CHANNEL | Single | 40A | 600V | 600V | POWER CONTROL | SILICON | 33 ns | 2.5V @ 15V, 12A | 204 ns | 20V | 5.75V | 390V, 12A, 10 Ω, 15V | 53nC | 25ns/90ns | 81μJ (on), 125μJ (off) |
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