Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Continuous Drain Current (ID) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Drain to Source Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STGP10NB60SD | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | ACTIVE (Last Updated: 8 months ago) | Through Hole | Tube | PowerMESH™ | Active | 1 (Unlimited) | 3 | EAR99 | 10.4mm | ROHS3 Compliant | Lead Free | Tin | 20A | No | TO-220-3 | 9.15mm | 4.6mm | Through Hole | 6.000006g | -55°C~150°C TJ | 600V | Standard | e3 | STGP10 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 80W | 80W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 3.5W | 700 ns | 37 ns | 29A | 600V | 600V | 10A | POWER CONTROL | 1.2 μs | SILICON | 460ns | 600V | 1160 ns | 1.75V @ 15V, 10A | 3100 ns | 20V | 5V | 480V, 10A, 1k Ω, 15V | 33nC | 80A | 700ns/1.2μs | 600μJ (on), 5mJ (off) | ||||||||||||||||||||||||||||
 |
IXXK200N60B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~175°C TJ | Standard | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 1.63kW | 1630W | 1 | COLLECTOR | N-CHANNEL | Single | 1.63kW | 380A | 600V | 1.7V | POWER CONTROL | SILICON | 1.4V | 140 ns | 1.7V @ 15V, 100A | 395 ns | PT | 20V | 6V | 360V, 100A, 1 Ω, 15V | 315nC | 900A | 48ns/160ns | 2.85mJ (on), 2.9mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
 |
IXGH24N60C | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2000 | HiPerFAST™, Lightspeed™ | yes | Obsolete | Not Applicable | 3 | RoHS Compliant | Lead Free | 48A | 3 | FAST SWITCHING | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | 600V | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*24N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 48A | 600V | 600V | POWER CONTROL | SILICON | 25ns | 15 ns | 2.5V @ 15V, 24A | 130 ns | 20V | 5V | 110ns | 480V, 24A, 10 Ω, 15V | 55nC | 96A | 15ns/75ns | 240μJ (off) | |||||||||||||||||||||||||||||||||||||
 |
IXBX75N170 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2009 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | IXB*75N170 | 3 | Insulated Gate BIP Transistors | 1.04kW | 1040W | 1 | COLLECTOR | N-CHANNEL | Single | 1.5 μs | 200A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 277 ns | 3.1V @ 15V, 75A | 840 ns | 20V | 1700V | 5.5V | 350nC | 580A | |||||||||||||||||||||||||||||||||||||||||||
 |
IXGT72N60B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 20 Weeks | Surface Mount | Tube | GenX3™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 540W | 540W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 75A | 600V | 1.8V | POWER CONTROL | SILICON | 63 ns | 1.8V @ 15V, 60A | 370 ns | PT | 20V | 5V | 160ns | 480V, 50A, 3 Ω, 15V | 230nC | 400A | 31ns/150ns | 1.38mJ (on), 1.05mJ (off) | ||||||||||||||||||||||||||||||||||||||
 |
STGW60H65F | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | STGW60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 360W | 360W | 1 | N-CHANNEL | Single | 65 ns | 120A | 650V | 600V | POWER CONTROL | 210 ns | SILICON | 1.9V | 96 ns | 1.9V @ 15V, 60A | 265 ns | Trench Field Stop | 20V | 400V, 60A, 10 Ω, 15V | 217nC | 240A | 65ns/180ns | 750μJ (on), 1.05mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
 |
FGH40N65UFDTU | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.6mm | ROHS3 Compliant | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | No SVHC | 20.6mm | 4.7mm | Through Hole | 6.39g | -55°C~150°C TJ | Standard | 8541.29.00.95 | Insulated Gate BIP Transistors | 290W | 290W | 1 | TO-247AB | COLLECTOR | N-CHANNEL | Single | 45 ns | 80A | 650V | 650V | POWER CONTROL | SILICON | 650V | 69 ns | 2.4V @ 15V, 40A | 160 ns | Field Stop | 20V | 6.5V | 60ns | 400V, 40A, 10 Ω, 15V | 120nC | 120A | 24ns/112ns | 1.19mJ (on), 460μJ (off) | ||||||||||||||||||||||||||||||||||||
 |
NGB8202ANTF4G | Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 34 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | Logic | NOT SPECIFIED | NOT SPECIFIED | 150W | 1.9V @ 4.5V, 20A | 440V | 20A | 300V, 9A, 1k Ω, 5V | 50A | -/5μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGH30N60BD1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2000 | HiPerFAST™ | yes | Obsolete | Not Applicable | 3 | RoHS Compliant | Lead Free | 60A | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | 600V | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*30N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 25ns | 60A | 600V | 600V | POWER CONTROL | SILICON | 30ns | 25 ns | 1.8V @ 15V, 30A | 200 ns | 20V | 5V | 190ns | 480V, 30A, 4.7 Ω, 15V | 110nC | 120A | 25ns/130ns | 1mJ (off) | |||||||||||||||||||||||||||||||||||||
|
IXGH32N60BU1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2003 | HiPerFAST™ | yes | Obsolete | Not Applicable | 3 | RoHS Compliant | Lead Free | 60A | No | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | 600V | Standard | IXG*32N60 | 3 | Insulated Gate BIP Transistors | 200W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 25 ns | 50ns | 60A | 600V | 600V | MOTOR CONTROL | 100 ns | SILICON | 20ns | 50 ns | 2.3V @ 15V, 32A | 240 ns | 20V | 5.5V | 480V, 32A, 4.7 Ω, 15V | 110nC | 120A | 25ns/100ns | 600μJ (off) | ||||||||||||||||||||||||||||||||||||||
|
IXXX160N65C4 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2013 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | 160N65 | Insulated Gate BIP Transistors | 940W | N-CHANNEL | Single | 940W | 290A | 650V | 2.1V | 1.7V | 2.1V @ 15V, 160A | PT | 20V | 6.5V | 400V, 80A, 1 Ω, 15V | 422nC | 800A | 52ns/197ns | 3.5mJ (on), 1.3mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGH2N250 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 32W | 32W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | 5.5A | 2.5kV | 3.1V | POWER CONTROL | SILICON | 115 ns | 3.1V @ 15V, 2A | 278 ns | 20V | 2500V | 5.5V | 10.5nC | 13.5A | |||||||||||||||||||||||||||||||||||||||||
|
IXBH6N170 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2008 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Insulated Gate BIP Transistors | 75W | 75W | 1 | COLLECTOR | N-CHANNEL | Single | 1.08 μs | 12A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 2.3V | 104 ns | 3.4V @ 15V, 6A | 700 ns | 20V | 1700V | 5.5V | 17nC | 36A | |||||||||||||||||||||||||||||||||||||||||
 |
SGB06N60ATMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | 2006 | no | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | No | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | GULL WING | 3 | R-PSSO-G2 | 68W | 68W | 1 | COLLECTOR | N-CHANNEL | Single | 12A | 600V | 600V | POWER CONTROL | SILICON | 41 ns | 2.4V @ 15V, 6A | 318 ns | NPT | 400V, 6A, 50 Ω, 15V | 32nC | 24A | 25ns/220ns | 215μJ | |||||||||||||||||||||||||||||||||||||||||||||||
 |
RGW80TS65DGC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | -40°C~175°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 214W | 1 | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 92ns | POWER CONTROL | SILICON | 59 ns | 1.9V @ 15V, 40A | 228 ns | Trench Field Stop | 650V | 78A | 400V, 40A, 10 Ω, 15V | 110nC | 160A | 44ns/143ns | 760μJ (on), 720μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGH17N100U1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 1997 | yes | Obsolete | Not Applicable | 3 | RoHS Compliant | Lead Free | 34A | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | 1kV | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*17N100 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 100 ns | 50ns | 34A | 1kV | 3.5V | POWER CONTROL | 500 ns | SILICON | 200ns | 300 ns | 3.5V @ 15V, 17A | 1900 ns | 20V | 1000V | 5V | 800V, 17A, 82 Ω, 15V | 100nC | 68A | 100ns/500ns | 3mJ (off) | ||||||||||||||||||||||||||||||||||||
 |
IXGR40N60C2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2005 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | ISOPLUS247™ | Through Hole | 5.3g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*40N60 | 3 | Not Qualified | 170W | 170W | 1 | ISOLATED | N-CHANNEL | Single | 25 ns | 56A | 600V | 600V | POWER CONTROL | SILICON | 2.7V | 38 ns | 2.7V @ 15V, 30A | 210 ns | PT | 400V, 30A, 3 Ω, 15V | 95nC | 200A | 18ns/90ns | 200μJ (off) | ||||||||||||||||||||||||||||||||||||||||
 |
SGP15N60XKSA1 | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | 139W | PG-TO220-3 | 2.4V @ 15V, 15A | NPT | 600V | 31A | 400V, 15A, 21Ohm, 15V | 76nC | 62A | 32ns/234ns | 570μJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IXYH120N65C3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 28 Weeks | XPT™, GenX3™ | Active | TO-247-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 1360W | 29ns | 2.8V @ 15V, 100A | PT | 650V | 260A | 400V, 50A, 2 Ω, 15V | 265nC | 620A | 28ns/127ns | 1.25mJ (on), 500μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IXGB200N60B3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*200N60 | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 1.25kW | 1250W | 1 | COLLECTOR | N-CHANNEL | Single | 1.25kW | 75A | 600V | 1.5V | POWER CONTROL | SILICON | 1.35V | 122 ns | 1.5V @ 15V, 100A | 730 ns | PT | 20V | 5V | 300ns | 300V, 100A, 1 Ω, 15V | 750nC | 600A | 44ns/310ns | 1.6mJ (on), 2.9mJ (off) | |||||||||||||||||||||||||||||||||||||
 |
NGTG35N65FL2WG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | ACTIVE (Last Updated: 5 days ago) | Through Hole | Tube | 2015 | yes | Active | 1 (Unlimited) | 3 | 16.26mm | ROHS3 Compliant | Lead Free | Tin | 3 | TO-247-3 | No SVHC | 21.08mm | 5.3mm | Through Hole | -55°C~175°C TJ | Standard | e3 | 300W | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 70A | 650V | 650V | POWER CONTROL | SILICON | 1.7V | 108 ns | 2V @ 15V, 35A | 231 ns | Field Stop | 400V, 35A, 10 Ω, 15V | 125nC | 120A | 72ns/132ns | 840μJ (on), 280μJ (off) | ||||||||||||||||||||||||||||||||||||||||||
|
IRG4BC30FD-SPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tube | 2010 | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 31A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.699mm | 9.652mm | Surface Mount | -55°C~150°C TJ | 600V | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | Insulated Gate BIP Transistors | 100W | 1 | COLLECTOR | N-CHANNEL | Single | 100W | 42 ns | 31A | 600V | 1.8V | POWER CONTROL | SILICON | 27ns | 1.8V | 69 ns | 1.8V @ 15V, 17A | 620 ns | 20V | 6V | 480V, 17A, 23 Ω, 15V | 51nC | 124A | 42ns/230ns | 630μJ (on), 1.39mJ (off) | ||||||||||||||||||||||||||||||||
|
IXGR50N60C2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2013 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | 247 | ISOPLUS247™ | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*50N60 | 3 | R-PSIP-T3 | Not Qualified | 200W | 200W | 1 | ISOLATED | N-CHANNEL | Single | 35 ns | 75A | 600V | 600V | MOTOR CONTROL | SILICON | 2.7V | 43 ns | 2.7V @ 15V, 40A | 230 ns | PT | 480V, 40A, 2 Ω, 15V | 138nC | 300A | 18ns/115ns | 380μJ (off) | |||||||||||||||||||||||||||||||||||||||||
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AUIRGP4066D1-E | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 25 Weeks | Through Hole | Tube | 2012 | Obsolete | 1 (Unlimited) | 3 | EAR99 | 15.87mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.13mm | Through Hole | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Insulated Gate BIP Transistors | 454W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 454W | 50 ns | 240ns | 140A | 600V | 2.1V | 100ns | POWER CONTROL | 200 ns | SILICON | 1.7V | 115 ns | 2.1V @ 15V, 75A | 320 ns | Trench | 20V | 6.5V | 80ns | 400V, 75A, 10 Ω, 15V | 225nC | 225A | 50ns/200ns | 4.24mJ (on), 2.17mJ (off) | |||||||||||||||||||||||||||||||||
 |
IRGB10B60KDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2003 | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.6426mm | RoHS Compliant | Lead Free | 22A | No | 3 | TO-220-3 | No SVHC | 16.51mm | 4.82mm | Through Hole | 6.000006g | -55°C~150°C TJ | 600V | Standard | Insulated Gate BIP Transistors | 156W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 156W | 90 ns | 22A | 600V | 2.2V | MOTOR CONTROL | SILICON | 20ns | 1.8V | 50 ns | 2.2V @ 15V, 10A | 276 ns | NPT | 20V | 5.5V | 400V, 10A, 47 Ω, 15V | 38nC | 44A | 30ns/230ns | 140μJ (on), 250μJ (off) | ||||||||||||||||||||||||||||||||||
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IRGS4B60KD1PBF | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | Standard | 63W | D2PAK | 93ns | 2.5V @ 15V, 4A | NPT | 600V | 11A | 400V, 4A, 100Ohm, 15V | 12nC | 22A | 22ns/100ns | 73μJ (on), 47μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NGTB30N120IHRWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | LAST SHIPMENTS (Last Updated: 1 day ago) | Tube | 2013 | yes | Obsolete | 1 (Unlimited) | EAR99 | 16.25mm | RoHS Compliant | Lead Free | 3 | TO-247-3 | No SVHC | 21.4mm | 5.3mm | Through Hole | 6.500007g | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | 3 | NO | Insulated Gate BIP Transistors | 384W | 384W | Halogen Free | N-CHANNEL | Single | 60A | 1.2kV | 1.2kV | 2.2V | 2.5V @ 15V, 30A | Trench Field Stop | 20V | 1200V | 6.5V | 600V, 30A, 10 Ω, 15V | 225nC | 120A | -/230ns | 700μJ (off) | |||||||||||||||||||||||||||||||||||||||||
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NGTB20N120LWG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | LAST SHIPMENTS (Last Updated: 1 week ago) | Tube | 1999 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 16.26mm | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 21.08mm | 5.3mm | Through Hole | -55°C~150°C TJ | Standard | e3 | Tin (Sn) | 3 | NO | Insulated Gate BIP Transistors | 192W | 192W | 1 | COLLECTOR | N-CHANNEL | Single | 77W | 86 ns | 40A | 1.2kV | 1.2kV | MOTOR CONTROL | 235 ns | SILICON | 2.2V | 110 ns | 2.2V @ 15V, 20A | 485 ns | Trench Field Stop | 20V | 1200V | 6.5V | 600V, 20A, 10 Ω, 15V | 200nC | 200A | 86ns/235ns | 3.1mJ (on), 700μJ (off) | |||||||||||||||||||||||||||||||||
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FGH75T65SQDT_F155 | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | 6.39g | -55°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 375W | 76ns | 2.1V @ 15V, 75A | Trench Field Stop | 650V | 150A | 400V, 18.8A, 4.7 Ω, 15V | 128nC | 300A | 23ns/120ns | 300μJ (on), 70μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RJH60D1DPE-00#J3 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Cut Tape (CT) | 2012 | Obsolete | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | 83 | SC-83 | Surface Mount | 150°C TJ | Standard | RJH60D | 4 | 52W | 52W | Single | 30 ns | 600V | 100 ns | 20A | 600V | 600V | 42 ns | 2.5V @ 15V, 10A | Trench | 300V, 10A, 5 Ω, 15V | 13nC | 30ns/42ns | 100μJ (on), 130μJ (off) |
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STGP10NB60SD STMicroelectronics
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AUIRGP4066D1-E Infineon Technologies
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NGTB20N120LWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
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FGH75T65SQDT_F155 ON Semiconductor
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