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RF MOSFETs Transistors

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Material Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Voltage - Rated Current Rating Number of Pins Additional Feature Package / Case Reach Compliance Code Frequency Mfr Voltage - Rated DC Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Gain Max Power Dissipation Reference Standard Number of Elements Configuration Max Output Power Case Connection Current Rating (Amps) Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Min Breakdown Voltage Supplier Device Package Number of Terminals Continuous Drain Current (ID) Transistor Application DS Breakdown Voltage-Min FET Technology Source Url Status Check Date Transistor Element Material Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Drain Current-Max (Abs) (ID) Drain to Source Voltage (Vdss) Feedback Cap-Max (Crss) Current - Test Transistor Type Voltage - Test Highest Frequency Band Noise Figure Power Gain-Min (Gp) Power - Output Channel Type Mode of Operation HTS Maximum Operating Temperature (°C) Minimum Operating Temperature (°C) Mounting Package Height Package Length Package Width PCB changed Standard Package Name Supplier Package ECCN (US) Maximum Power Dissipation (mW) AEC Qualified Military Output Power (W) Channel Mode Number of Elements per Chip Maximum Drain Source Voltage (V) Maximum Gate Source Voltage (V) Maximum Continuous Drain Current (A) Typical Input Capacitance @ Vds (pF) Typical Reverse Transfer Capacitance @ Vds (pF) Typical Output Capacitance @ Vds (pF) Process Technology Typical Power Gain (dB) Maximum Frequency (MHz) Minimum Frequency (MHz) Typical Drain Efficiency (%) Maximum VSWR Typical Forward Transconductance (S) Maximum Gate Threshold Voltage (V) Maximum Gate Source Leakage Current (nA) Maximum IDSS (uA)
BLP10H610 BLP10H610 Ampleon 0.0000
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0.00000000 download Active RoHS Compliant 12 Dual Common Source N CW
2SK1069-4-TL-E 2SK1069-4-TL-E Sanyo 0.0000
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0.00000000 * Sanyo
BLF7G24L-100,118 BLF7G24L-100,118 Ampleon USA Inc. 0.0000
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0.00000000 download Tape & Reel (TR) 2010 Obsolete 1 (Unlimited) Non-RoHS Compliant 65V SOT-502A 2.3GHz~2.4GHz BLF7G24 18dB 28A LDMOST 900mA LDMOS 28V 20W
BLS9G2729LS-350U BLS9G2729LS-350U Ampleon USA Inc. 0.0000
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0.00000000 download 13 Weeks Tray Active 1 (Unlimited) 65V SOT-502B 2.7GHz~2.9GHz 14dB 4μA 400mA LDMOS 28V 350W
BF1109WR,115 BF1109WR,115 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 1997 Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant 11V LOW NOISE SC-82A, SOT-343 unknown 800MHz DUAL GATE, ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 260 40 BF1109 4 YES R-PDSO-G4 150°C FET General Purpose Power Not Qualified 20dB 1 SINGLE SOURCE 30mA AMPLIFIER 11V METAL-OXIDE SEMICONDUCTOR 2013-06-14 00:00:00 SILICON 0.03A 0.04 pF N-Channel Dual Gate 9V 1.5dB
MRFX600HSR5 MRFX600HSR5 NXP Semiconductors 0.0000
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0.00000000 download 10 Weeks Tape & Reel (TR) Active Not Applicable ROHS3 Compliant 179V NI-780S-4L 1.8MHz~400MHz 26.4dB 10μA 100mA LDMOS (Dual) 65V 600W
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0.00000000 download Si Active RoHS Compliant 5 Dual Common Source N
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0.00000000 download Si Active RoHS Compliant 4 Single Dual Source 8541.29.00.95 200 Screw 6.6 24.76 9.52 4 Case DA Case DA EAR99 29000 No No 5 1 70 ±20 2 20(Max)@0V DMOS 13(Min) 500 40(Min) 20(Min)
BLP05H6150XRG BLP05H6150XRG Ampleon 0.0000
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0.00000000 download Tape and Reel Active Yes with exemptions 4 Dual Common Source N Pulsed RF
MRF8P23080HSR3 MRF8P23080HSR3 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 2010 Obsolete 1 (Unlimited) 4 EAR99 ROHS3 Compliant 65V NI-780S-4 2.3GHz ENHANCEMENT MODE 8541.29.00.75 FLAT 260 40 MRF8P23080 YES R-CDFP-F4 225°C FET General Purpose Power Not Qualified 14.6dB 2 COMMON SOURCE, 2 ELEMENTS SOURCE N-CHANNEL AMPLIFIER 65V METAL-OXIDE SEMICONDUCTOR SILICON 280mA LDMOS (Dual) 28V 16W
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0.00000000 BLC 65 V SOT-1258-4 2.11GHz ~ 2.18GHz Ampleon USA Inc. 15.7dB 2.8μA SOT1258-4 1.15 A LDMOS (Dual), Common Source 30 V - 570W
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0.00000000 download Si Active RoHS Compliant 5 Dual Common Source N 8541.29.00.95 200 -65 Screw 4.82 18.9 6.35 5 Case DQ EAR99 35000 No No 5 Enhancement 2 40 ±20 2 12(Max)@12.5V 1(Max)@12.5V 10(Max)@12.5V DMOS 10(Min) 1000 1 40(Min) 20(Min) 0.18(Min)
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0.00000000 download 13 Weeks Tray Active 1 (Unlimited) ROHS3 Compliant SOT539A
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J310_D27Z J310_D27Z ON Semiconductor 0.0000
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0.00000000 download Tape & Reel (TR) Obsolete 1 (Unlimited) 25V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) 450MHz J310 12dB 60mA TO-92-3 10mA N-Channel JFET 10V 3dB
CLF1G0035-100 CLF1G0035-100 Rochester Electronics 0.0000
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0.00000000 - 150 V SOT-467C 3.5GHz Rochester Electronics, LLC 12dB - SOT467C 330 mA HEMT 50 V - 100W
ON5173118 ON5173118 Nexperia USA Inc. 0.0000
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NE3512S02-T1D-A NE3512S02-T1D-A RENESAS ELECTRONICS CORP 0.0000
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0.00000000 [object Object] yes EAR99 RoHS Compliant LOW NOISE compliant DEPLETION MODE e6 Tin/Bismuth (Sn/Bi) QUAD FLAT NOT SPECIFIED NOT SPECIFIED 4 YES R-PQMW-F4 125°C Other Transistors Not Qualified 1 SINGLE N-CHANNEL 0.165W 4 AMPLIFIER 3V HETERO-JUNCTION SILICON 0.015A KU B 12.5dB
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0.00000000 12 Weeks Tape & Reel (TR) Active 1 (Unlimited) RoHS Compliant H-37248-4 H-37248-4
BLF6G20S-230PRN,11 BLF6G20S-230PRN,11 Ampleon USA Inc. 0.0000
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0.00000000 download Tray 2010 Obsolete 1 (Unlimited) 65V SOT539B BLF6G20 SOT539B 2A LDMOS 28V 65W
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0.00000000 download 13 Weeks Tray 2007 Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant 135V SOT-1214A unknown 108MHz ENHANCEMENT MODE FLAT NOT SPECIFIED NOT SPECIFIED YES R-CDFM-F4 23.9dB IEC-60134 2 COMMON SOURCE, 2 ELEMENTS N-CHANNEL AMPLIFIER 135V METAL-OXIDE SEMICONDUCTOR SILICON 100mA LDMOS (Dual), Common Source 50V 700W
MRF6V2300NBR1 MRF6V2300NBR1 NXP Semiconductors 0.0000
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0.00000000 download 10 Weeks Tape & Reel (TR) 2006 Obsolete 3 (168 Hours) 4 EAR99 Non-RoHS Compliant 110V TO-272BB not_compliant 220MHz ENHANCEMENT MODE 8541.29.00.75 e3 Tin (Sn) DUAL FLAT 260 40 MRF6V2300 YES R-PDFM-F4 225°C FET General Purpose Power Not Qualified 25.5dB 1 SINGLE SOURCE N-CHANNEL AMPLIFIER 110V METAL-OXIDE SEMICONDUCTOR SILICON 900mA LDMOS 50V 300W
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MRF5P21045NR1 MRF5P21045NR1 NXP Semiconductors 0.0000
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0.00000000 download Tape & Reel (TR) 2007 Obsolete 1 (Unlimited) EAR99 ROHS3 Compliant 65V TO-270AB 2.11GHz~2.17GHz 14.5dB 500mA LDMOS (Dual) 28V 10W
PD57060-E PD57060-E STMicroelectronics 0.0000
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0.00000000 download 25 Weeks Surface Mount Tube Active 3 (168 Hours) 2 EAR99 165°C -65°C ROHS3 Compliant Lead Free 7A 3 HIGH RELIABILITY PowerSO-10 Exposed Bottom Pad not_compliant 945MHz 65V ENHANCEMENT MODE e3 Matte Tin (Sn) - annealed DUAL GULL WING 250 NOT SPECIFIED PD57060 10 R-PDSO-G2 FET General Purpose Power Not Qualified 14.3dB 79W 1 60W SOURCE N-CHANNEL Single 79W 65V 7A AMPLIFIER METAL-OXIDE SEMICONDUCTOR 20V 65V 7A 65V 100mA LDMOS 28V
BLC8G24LS-241AVY BLC8G24LS-241AVY Ampleon USA Inc. 0.0000
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0.00000000 download 13 Weeks Tape & Reel (TR) 2011 Active 3 (168 Hours) ROHS3 Compliant 65V SOT-1252-1 2.3GHz~2.4GHz 14.5dB DFM8 500mA LDMOS (Dual), Common Source 28V 56W
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