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  • STF22NM60N

STF22NM60N

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Manufacturer No:

STF22NM60N

Manufacturer:

STMicroelectronics

HK JDW NO:

761-STF22NM60N

Package:

TO-220-3 Full Pack

Datasheet:

STF22NM60N

Description:

STF22NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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STF22NM60N Description


STF22NM60N is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.



STF22NM60N Features


  • 100% avalanche tested

  • Low input capacitance and gate charge

  • Low gate input resistance



STF22NM60N Applications


  • Power Management

  • Industrial

  • DC-DC Conversion

  • Switch application


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

STF22NM60N

technical specifications, attributes, parameters and parts with similar specifications to STF22NM60N.

  • Type
    Parameter
    Select All
  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Series

    MDmesh™ II

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn) - annealed

  • Additional Feature

    AVALANCHE RATED

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Base Part Number

    STF22

  • Pin Count

    3

  • Number of Elements

    1

  • Number of Channels

    1

  • Power Dissipation-Max

    30W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    30W

  • Case Connection

    ISOLATED

  • Turn On Delay Time

    11 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    220m Ω @ 8A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 100μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1300pF @ 50V

  • Current - Continuous Drain (Id) @ 25°C

    16A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    44nC @ 10V

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    38 ns

  • Turn-Off Delay Time

    74 ns

  • Continuous Drain Current (ID)

    16A

  • Threshold Voltage

    3V

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    30V

  • Drain-source On Resistance-Max

    0.22Ohm

  • Drain to Source Breakdown Voltage

    600V

  • Pulsed Drain Current-Max (IDM)

    64A

  • Max Junction Temperature (Tj)

    150°C

  • Height

    20mm

  • Length

    10.4mm

  • Width

    4.6mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    16 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 7 months ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3 Full Pack

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Manufacturer Package Identifier

    TO-220FP-7012510

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