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SSN1N45BTA
SSN1N45BTA
598-SSN1N45BTA
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
SSN1N45BTA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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SSN1N45BTA Description
With a voltage of 450V, ON Semiconductor's SSN1N45BTA is an N-Channel enhancement mode power field-effect transistor. Fairchild's unique planar DMOS technology is used to make these N-Channel enhancement mode power field-effect transistors. In the avalanche and commutation modes, this innovative technology has been specifically tuned to minimize on-state resistance, provide improved switching performance, and withstand high-energy pulses. The SSN1N45BTA is ideal for electronic ballasts with a half-bridge arrangement.
SSN1N45BTA Features
0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V
Low gate charge ( typical 6.5 nC)
Low Crss ( typical 6.5 pF)
100% avalanche tested
Improved dv/dt capability
Gate-Source Voltage ± 50V guaranteed
SSN1N45BTA Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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SSN1N45BTA
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