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NTLJD3119CTAG
NTLJD3119CTAG
598-NTLJD3119CTAG
6-WDFN Exposed Pad
NTLJD3119CTAG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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NTLJD3119CTAG Description
Power MOSFET is a special type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other power semiconductor devices such as insulated gate bipolar transistors (IGBT) or thyristors, its main advantages are fast switching speed and high efficiency at low voltage.
NTLJD3119CTAG Features
? Complementary N?Channel and P?Channel MOSFET
? WDFN Package with Exposed Drain Pad for Excellent Thermal
Conduction
? Footprint Same as SC?88 Package
? Leading Edge Trench Technology for Low On Resistance
? 1.8 V Gate Threshold Voltage
? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
? This is a Pb?Free Device
NTLJD3119CTAG Applications
? Synchronous DC?DC Conversion Circuits
? Load/Power Management of Portable Devices like PDA?ˉs, Cellular
Phones and Hard Drives
? Color Display and Camera Flash Regulators
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NTLJD3119CTAG
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