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  • NGB8202NT4

NGB8202NT4

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Manufacturer No:

NGB8202NT4

Manufacturer:

ON Semiconductor

HK JDW NO:

598-NGB8202NT4

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

NGB8202NT4

Description:

NGB8202NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

NGB8202NT4

technical specifications, attributes, parameters and parts with similar specifications to NGB8202NT4.

  • Type
    Parameter
    Select All
  • Current - Collector Pulsed (Icm)

    50A

  • Td (on/off) @ 25°C

    -/5μs

  • Gate-Emitter Voltage-Max

    15V

  • Gate-Emitter Thr Voltage-Max

    2.1V

  • Fall Time-Max (tf)

    14000ns

  • RoHS Status

    Non-RoHS Compliant

  • Lead Free

    Contains Lead

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2010

  • JESD-609 Code

    e0

  • Pbfree Code

    no

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin/Lead (Sn80Pb20)

  • Subcategory

    Insulated Gate BIP Transistors

  • Voltage - Rated DC

    400V

  • Max Power Dissipation

    150W

  • Terminal Position

    SINGLE

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    240

  • Reach Compliance Code

    not_compliant

  • Current Rating

    20A

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Base Part Number

    NGB8202

  • Pin Count

    3

  • JESD-30 Code

    R-PSSO-G2

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Rise Time-Max

    8000ns

  • Configuration

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • Power Dissipation

    150W

  • Case Connection

    COLLECTOR

  • Input Type

    Logic

  • Transistor Application

    AUTOMOTIVE IGNITION

  • Polarity/Channel Type

    N-CHANNEL

  • Collector Emitter Voltage (VCEO)

    1.9V

  • Max Collector Current

    20A

  • Collector Emitter Breakdown Voltage

    440V

  • Turn On Time

    6500 ns

  • Test Condition

    300V, 9A, 1k Ω, 5V

  • Vce(on) (Max) @ Vge, Ic

    1.9V @ 4.5V, 20A

  • Turn Off Time-Nom (toff)

    18500 ns

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