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  • IRLIZ44NPBF

IRLIZ44NPBF

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Manufacturer No:

IRLIZ44NPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRLIZ44NPBF

Package:

TO-220-3 Full Pack

Datasheet:

IRLIZ44NPBF

Description:

IRLIZ44NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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IRLIZ44NPBF Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.



IRLIZ44NPBF Features

Logic –Level Gate Drive

Advanced Process Technology

Isolated Package

High Voltage Isolation = 2.5KVRMS ?

Sink to Lead Creepage Dist. = 4.8mm

Fully Avalanche Rated

Lead-Free



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From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRLIZ44NPBF

technical specifications, attributes, parameters and parts with similar specifications to IRLIZ44NPBF.

  • Type
    Parameter
    Select All
  • Resistance

    25mOhm

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    55V

  • Technology

    MOSFET (Metal Oxide)

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Current Rating

    30A

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Power Dissipation-Max

    45W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    38W

  • Case Connection

    ISOLATED

  • Turn On Delay Time

    11 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    22m Ω @ 17A, 10V

  • Vgs(th) (Max) @ Id

    2V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1700pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    30A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    48nC @ 5V

  • Rise Time

    84ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4V 10V

  • Vgs (Max)

    ±16V

  • Fall Time (Typ)

    15 ns

  • Turn-Off Delay Time

    26 ns

  • Continuous Drain Current (ID)

    30A

  • Threshold Voltage

    2V

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    16V

  • Drain Current-Max (Abs) (ID)

    28A

  • Drain to Source Breakdown Voltage

    55V

  • Dual Supply Voltage

    55V

  • Recovery Time

    120 ns

  • Isolation Voltage

    2kV

  • Nominal Vgs

    2 V

  • Height

    9.8mm

  • Length

    10.6172mm

  • Width

    4.826mm

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead, Lead Free

  • Factory Lead Time

    14 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3 Full Pack

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2004

  • Series

    HEXFET®

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

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