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  • IRFIZ44NPBF

IRFIZ44NPBF

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Manufacturer No:

IRFIZ44NPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFIZ44NPBF

Package:

TO-220-3 Full Pack

Datasheet:

IRFIZ44NPBF

Description:

IRFIZ44NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRFIZ44NPBF Description

The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100-micron mica barrier with a standard TO-220 product. The Fullback is mounted to a heat sink using a single clip or by a single screw fixing. 



IRFIZ44NPBF Features

Advanced Process Technology

Isolated Package

High Voltage Isolation = 2.5KVRMS ?

Sink to Lead Creepage Dist. = 4.8mm

Fully Avalanche Rated

Lead-Free 



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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

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4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFIZ44NPBF

technical specifications, attributes, parameters and parts with similar specifications to IRFIZ44NPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3 Full Pack

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2003

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    Through Hole

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY

  • Voltage - Rated DC

    60V

  • Technology

    MOSFET (Metal Oxide)

  • Current Rating

    30A

  • Number of Elements

    1

  • Power Dissipation-Max

    45W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    38W

  • Case Connection

    ISOLATED

  • Turn On Delay Time

    7.3 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    24m Ω @ 17A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1300pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    31A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    65nC @ 10V

  • Rise Time

    69ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    60 ns

  • Turn-Off Delay Time

    47 ns

  • Continuous Drain Current (ID)

    31A

  • Threshold Voltage

    4V

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    20V

  • Drain-source On Resistance-Max

    0.024Ohm

  • Drain to Source Breakdown Voltage

    55V

  • Dual Supply Voltage

    55V

  • Recovery Time

    98 ns

  • Isolation Voltage

    2.5kV

  • Nominal Vgs

    4 V

  • Height

    9.8mm

  • Length

    10.6172mm

  • Width

    4.826mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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