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Home Home Discrete Semiconductors Single MOSFETs Transistors IPT004N03LATMA1
IPT004N03LATMA1
  • IPT004N03LATMA1
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IPT004N03LATMA1

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Manufacturer No:

IPT004N03LATMA1

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IPT004N03LATMA1

Package:

8-PowerSFN

Datasheet:

IPT004N03LATMA1

Description:

IPT004N03LATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

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In Stock : 999

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IPT004N03LATMA1 Description


IPT004N03LATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 30V. The operating temperature of IPT004N03LATMA1 is -55??C~150??C TJ and its maximum power dissipation is 3.8W Ta. IPT004N03LATMA1 has 8 pins and it is available in Tape & Reel (TR) packaging way.



IPT004N03LATMA1 Features


  • Optimized for e-fuse and ORing application

  • Very low on-resistance RDS(on)@VGS=4.5V

  • 100% avalanche tested

  • Superior thermal resistance

  • N-channel

  • Qualified according to JEDEC1)for target applications

  • Pb-free lead plating;RoHS compliant



IPT004N03LATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IPT004N03LATMA1

technical specifications, attributes, parameters and parts with similar specifications to IPT004N03LATMA1.

  • Type
    Parameter
    Select All

  • Factory Lead Time

    18 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerSFN

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2013

  • Series

    OptiMOS™

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    SINGLE

  • Terminal Form

    FLAT

  • Reach Compliance Code

    not_compliant

  • JESD-30 Code

    R-PSSO-F2

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Power Dissipation-Max

    3.8W Ta 300W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    300W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    30 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    0.4m Ω @ 150A, 10V

  • Vgs(th) (Max) @ Id

    2.2V @ 250μA

  • Halogen Free

    Halogen Free

  • Input Capacitance (Ciss) (Max) @ Vds

    24000pF @ 15V

  • Current - Continuous Drain (Id) @ 25°C

    300A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    163nC @ 4.5V

  • Rise Time

    17ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    37 ns

  • Turn-Off Delay Time

    149 ns

  • Continuous Drain Current (ID)

    300A

  • Threshold Voltage

    2.2V

  • Gate to Source Voltage (Vgs)

    20V

  • Max Dual Supply Voltage

    30V

  • Drain-source On Resistance-Max

    0.0005Ohm

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead

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