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IPP50R520CPXKSA1

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Manufacturer No:

IPP50R520CPXKSA1

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IPP50R520CPXKSA1

Package:

TO-220-3

Datasheet:

IPP50R520CPXKSA1

Description:

MOSFET (Metal Oxide) N-Channel Tube 520m Ω @ 3.8A, 10V ±20V 680pF @ 100V 17nC @ 10V TO-220-3

Quantity:

In Stock : 999

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Product Details

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IPP50R520CPXKSA1 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 166 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 680pF @ 100V maximal input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.1A continuous drain current (ID).With a drain-source breakdown voltage of 550V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 550V.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 15A.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 35 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 500V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPP50R520CPXKSA1 Features


the avalanche energy rating (Eas) is 166 mJ
a continuous drain current (ID) of 7.1A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 15A.

IPP50R520CPXKSA1 Applications


There are a lot of Infineon Technologies IPP50R520CPXKSA1 applications of single MOSFETs transistors.

  • Consumer Appliances
  • Lighting
  • Power Management Functions
  • DC/DC converters
  • Load switching
  • Motor drives and Uninterruptible Power Supplies
  • Telecom 1 Sever Power Supplies
  • Synchronous Rectification
  • Battery Protection Circuit
  • Uninterruptible Power Supply
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4. Shipping Cost

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IPP50R520CPXKSA1

technical specifications, attributes, parameters and parts with similar specifications to IPP50R520CPXKSA1.

  • Type
    Parameter
    Select All
  • Drain-source On Resistance-Max

    0.52Ohm

  • Drain to Source Breakdown Voltage

    550V

  • Pulsed Drain Current-Max (IDM)

    15A

  • Avalanche Energy Rating (Eas)

    166 mJ

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    8 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2008

  • Series

    CoolMOS™

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Last Time Buy

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Terminal Finish

    Tin (Sn)

  • Technology

    MOSFET (Metal Oxide)

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Pin Count

    3

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Power Dissipation-Max

    66W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    66W

  • Case Connection

    ISOLATED

  • Turn On Delay Time

    35 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    520m Ω @ 3.8A, 10V

  • Vgs(th) (Max) @ Id

    3.5V @ 250μA

  • Halogen Free

    Halogen Free

  • Input Capacitance (Ciss) (Max) @ Vds

    680pF @ 100V

  • Current - Continuous Drain (Id) @ 25°C

    7.1A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    17nC @ 10V

  • Rise Time

    14ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    17 ns

  • Turn-Off Delay Time

    80 ns

  • Continuous Drain Current (ID)

    7.1A

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    20V

  • Max Dual Supply Voltage

    500V

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