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HGTG30N60A4
HGTG30N60A4
598-HGTG30N60A4
TO-247-3
HGTG30N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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HGTG30N60A4 Description
The HGTG30N60A4 is a MOS gated high voltage switching device that combines MOSFET and bipolar transistor capabilities. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25oC and 150oC, the significantly smaller on-state voltage loss fluctuates relatively modestly. This IGBT is suited for a variety of high-voltage switching applications that operate at high frequencies and require minimal conduction losses. This gadget was created with high-frequency switch-mode power supplies in mind.
HGTG30N60A4 Features
Low Conduction Loss
>100kHz Operation at 390V, 30A
200kHz Operation at 390V, 18A
600V Switching SOA Capability
Temperature Compensating SABER? Model
Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC
HGTG30N60A4 Applications
UPS
Welder
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HGTG30N60A4
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