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FQP9N30
FQP9N30
598-FQP9N30
TO-220-3
FQP9N30 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
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FQP9N30 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 420 mJ.A device's maximum input capacitance is 750pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 9A. A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 300V, and this device has a drainage-to-source breakdown voltage of 300VV.Its drain current is 9A, and it is the maximum continuous current the device can conduct.It is [27 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device reduces its overall power consumption by using drive voltage (10V).
FQP9N30 Features
the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 27 ns
FQP9N30 Applications
There are a lot of ON Semiconductor FQP9N30 applications of single MOSFETs transistors.
- PFC stages, hard switching PWM stages and resonant switching
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
- Synchronous Rectification
- Battery Protection Circuit
- LCD/LED/ PDP TV Lighting
- Motor control
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Power Tools
- Load switching
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FQP9N30
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