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  • FQA11N90C-F109

FQA11N90C-F109

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Manufacturer No:

FQA11N90C-F109

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FQA11N90C-F109

Package:

TO-3P-3, SC-65-3

Datasheet:

FQA11N90C-F109

Description:

MOSFET (Metal Oxide) N-Channel Tube 1.1 Ω @ 5.5A, 10V ±30V 3290pF @ 25V 80nC @ 10V TO-3P-3, SC-65-3

Quantity:

In Stock : 999

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Product Details

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FQA11N90C-F109 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 960 mJ.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3290pF @ 25V is its maximum input capacitance.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=900V. And this device has 900V drain to source breakdown voltage.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 130 ns.A maximum pulsed drain current of 44A is the maximum peak drain current rated for this device.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 60 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.This device reduces its overall power consumption by using drive voltage (10V).

FQA11N90C-F109 Features


the avalanche energy rating (Eas) is 960 mJ
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 44A.
a threshold voltage of 5V

FQA11N90C-F109 Applications


There are a lot of ON Semiconductor FQA11N90C-F109 applications of single MOSFETs transistors.

  • Industrial Power Supplies
  • Server power supplies
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • DC-to-DC converters
  • Motor Drives and Uninterruptible Power Supples
  • General Purpose Interfacing Switch
  • LCD/LED TV
  • Power Management Functions
  • DC/DC converters
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FQA11N90C-F109

technical specifications, attributes, parameters and parts with similar specifications to FQA11N90C-F109.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 17 hours ago)

  • Contact Plating

    Tin

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-3P-3, SC-65-3

  • Number of Pins

    3

  • Weight

    6.401g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2014

  • Series

    QFET®

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Resistance

    1.1Ohm

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Power Dissipation-Max

    300W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    300W

  • Turn On Delay Time

    60 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    1.1 Ω @ 5.5A, 10V

  • Vgs(th) (Max) @ Id

    5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    3290pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    11A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    80nC @ 10V

  • Rise Time

    130ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    85 ns

  • Turn-Off Delay Time

    130 ns

  • Continuous Drain Current (ID)

    11A

  • Threshold Voltage

    5V

  • Gate to Source Voltage (Vgs)

    30V

  • Drain to Source Breakdown Voltage

    900V

  • Pulsed Drain Current-Max (IDM)

    44A

  • Avalanche Energy Rating (Eas)

    960 mJ

  • Height

    18.9mm

  • Length

    15.8mm

  • Width

    5mm

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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