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  • FF23MR12W1M1B11BOMA1

FF23MR12W1M1B11BOMA1

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Manufacturer No:

FF23MR12W1M1B11BOMA1

Manufacturer:

Infineon Technologies

HK JDW NO:

376-FF23MR12W1M1B11BOMA1

Package:

Module

Description:

FF23MR12W1M1B11BOMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

Purchasing and Inquiry

FF23MR12W1M1B11BOMA1    Description


 FF23MR12W1M1B11BOMA1 is a Easy DUAL Modul mit Cool SiC?Trench MOSFET und Press FIT/NTC.


FF23MR12W1M1B11BOMA1      Applications


·High Frequency Switching application

·DC/DC converter Solar applications

·UPS systems


FF23MR12W1M1B11BOMA1      Features


·High current density

·Low inductive design

·Low switching losses

Integrated NTC temperature sensor

·PressFIT contact technology

Rugged mounting due to integrated mounting clamps



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FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FF23MR12W1M1B11BOMA1

technical specifications, attributes, parameters and parts with similar specifications to FF23MR12W1M1B11BOMA1.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    16 Weeks

  • Mounting Type

    Chassis Mount

  • Package / Case

    Module

  • Manufacturer Package Identifier

    AG-EASY1BM-2

  • Operating Temperature

    -40°C~150°C TJ

  • Packaging

    Tray

  • Published

    2008

  • Series

    CoolSiC™+

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    Not Applicable

  • ECCN Code

    EAR99

  • Number of Channels

    2

  • Power Dissipation

    20mW

  • Turn On Delay Time

    12 ns

  • FET Type

    2 N-Channel (Dual)

  • Rds On (Max) @ Id, Vgs

    23m Ω @ 50A, 15V

  • Vgs(th) (Max) @ Id

    5.55V @ 20mA

  • Input Capacitance (Ciss) (Max) @ Vds

    3950pF @ 800V

  • Gate Charge (Qg) (Max) @ Vgs

    125nC @ 15V

  • Drain to Source Voltage (Vdss)

    1200V 1.2kV

  • Turn-Off Delay Time

    43.5 ns

  • Continuous Drain Current (ID)

    50A

  • Max Junction Temperature (Tj)

    150°C

  • FET Feature

    Silicon Carbide (SiC)

  • Height

    12.35mm

  • RoHS Status

    ROHS3 Compliant

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