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BSP300H6327XUSA1

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Manufacturer No:

BSP300H6327XUSA1

Manufacturer:

Infineon Technologies

HK JDW NO:

376-BSP300H6327XUSA1

Package:

TO-261-4, TO-261AA

Datasheet:

BSP300H6327XUSA1

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 20 Ω @ 190mA, 10V ±20V 230pF @ 25V TO-261-4, TO-261AA

Quantity:

In Stock : 999

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Product Details

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BSP300H6327XUSA1 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 36 mJ.The maximum input capacitance of this device is 230pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 190mA.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 27 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 800V.Using drive voltage (10V) reduces this device's overall power consumption.

BSP300H6327XUSA1 Features


the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 190mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 27 ns

BSP300H6327XUSA1 Applications


There are a lot of Infineon Technologies BSP300H6327XUSA1 applications of single MOSFETs transistors.

  • Motor control
  • Motor Drives and Uninterruptible Power Supples
  • Consumer Appliances
  • Battery Protection Circuit
  • LCD/LED/ PDP TV Lighting
  • Power Management Functions
  • Motor drives and Uninterruptible Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • Uninterruptible Power Supply
  • Industrial Power Supplies
1. Purchase

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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

2. Means of Payment

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3. RFQ (Request for Quotations)

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
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Western Union charge US$0.00 banking fee.

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DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BSP300H6327XUSA1

technical specifications, attributes, parameters and parts with similar specifications to BSP300H6327XUSA1.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-261-4, TO-261AA

  • Number of Pins

    4

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Cut Tape (CT)

  • Published

    2008

  • Series

    SIPMOS®

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Last Time Buy

  • Moisture Sensitivity Level (MSL)

    3 (168 Hours)

  • Number of Terminations

    4

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Additional Feature

    AVALANCHE RATED

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Pin Count

    4

  • Number of Elements

    1

  • Voltage

    800V

  • Power Dissipation-Max

    1.8W Ta

  • Element Configuration

    Single

  • Current

    2A

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    1.8W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    7 ns

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    20 Ω @ 190mA, 10V

  • Vgs(th) (Max) @ Id

    4V @ 1mA

  • Halogen Free

    Halogen Free

  • Input Capacitance (Ciss) (Max) @ Vds

    230pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    190mA Ta

  • Rise Time

    16ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    21 ns

  • Turn-Off Delay Time

    27 ns

  • Continuous Drain Current (ID)

    190mA

  • Gate to Source Voltage (Vgs)

    20V

  • Max Dual Supply Voltage

    800V

  • Drain to Source Breakdown Voltage

    800V

  • Avalanche Energy Rating (Eas)

    36 mJ

  • Height

    1.6mm

  • Length

    6.5mm

  • Width

    3.5mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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