
Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Memory IC Type | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Page Size | Serial Bus Type | I2C Control Byte | Reverse Pinout | Refresh Cycles | Access Mode | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
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S29GL064S70DHI020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tray | 2017 | GL-S | Active | 3 (168 Hours) | 64 | 3V | 9mm | ROHS3 Compliant | 64 | 64-LBGA | 64 Mb | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | BOTTOM | 3V | YES | 1mm | 2.7V | 3.6V | 70ns | 64Mb 4M x 16 | Non-Volatile | 2.7V~3.6V | 8MX8 | 8 | 3V | FLASH | Parallel | 60ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY7C09099V-12AC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2001 | Obsolete | 3 (168 Hours) | 100 | EAR99 | 2 | 14mm | Non-RoHS Compliant | Contains Lead | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 100-LQFP | not_compliant | 14mm | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Synchronous | 1.6mm | 8542.32.00.41 | 1 | e0 | TIN LEAD | QUAD | 240 | 3.3V | 30 | CY7C09099 | 100 | YES | 0.5mm | S-PQFP-G100 | 3V | Not Qualified | 3.3V | 3.6V | 3-STATE | 12ns | 1Mb 128K x 8 | Volatile | 0.205mA | 3V~3.6V | 128KX8 | 8 | 1048576 bit | 50MHz | 0.00025A | COMMON | 3V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS61LV12816L-10TL | ISSI, Integrated Silicon Solution Inc | 4.3701 |
Min: 1 Mult: 1 |
0.00000000 | Surface Mount | Tray | yes | Active | 3 (168 Hours) | 44 | 3.3V | 1 | ROHS3 Compliant | Lead Free | No | 44 | 44-TSOP (0.400, 10.16mm Width) | No SVHC | 2 Mb | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 1 | 60mA | 100MHz | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 3.3V | 40 | 44 | 0.8mm | 2.97V | 3.63V | 3-STATE | 2Mb 128K x 16 | Volatile | 17b | 3.135V~3.6V | 16 | Asynchronous | 0.003A | 16b | COMMON | 2V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT25TL512HBA8E12-0AAT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 24-TBGA | Surface Mount | -40°C~105°C TA | FLASH - NOR | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 133MHz | FLASH | SPI | 8ms, 2.8ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT25SF081-SSHD-T | Adesto Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 8 | 3.3V | 4.925mm | ROHS3 Compliant | Lead Free | 8 | 8-SOIC (0.154, 3.90mm Width) | 64 Mb | 1.75mm | 3.9mm | Surface Mount | -40°C~85°C TC | CMOS | SYNCHRONOUS | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | AT25SF081 | 1.27mm | 2.5V | 3.6V | 8 ns | 8Mb 1M x 8 | Non-Volatile | 2.5V~3.6V | 1 | SERIAL | 104MHz | 3V | 256B | FLASH | SPI | 5μs, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT49H16M36BM-25E:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 144-TFBGA | Surface Mount | 0°C~95°C TC | MT49H16M36 | 15ns | 576Mb 16M x 36 | Volatile | 1.7V~1.9V | 400MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S34MS01G200TFV003 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 6 Weeks | Tape & Reel (TR) | MS-2 | Discontinued | 3 (168 Hours) | 48 | 18.4mm | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~105°C TA | FLASH - NAND | ASYNCHRONOUS | 1.2mm | 8542.32.00.51 | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G48 | 1.7V | 1.95V | 1Gb 128M x 8 | Non-Volatile | 1.7V~1.95V | 128MX8 | 8 | 1073741824 bit | 1.8V | FLASH | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT28C64-15PI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1999 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-DIP (0.600, 15.24mm) | Through Hole | -40°C~85°C TC | EEPROM | AT28C64 | 28-PDIP | 150ns | 64Kb 8K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 1ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT45W2MW16BABB-706 WT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 54-VFBGA | Surface Mount | -30°C~85°C TC | PSRAM (Pseudo SRAM) | MT45W2MW16 | 32Mb 2M x 16 | Volatile | 1.7V~1.95V | PSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C128M8D3LB-12BCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2017 | Active | 3 (168 Hours) | 78 | 1 | 10.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 78-VFBGA | 8mm | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | SYNCHRONOUS | 1mm | 1 | BOTTOM | NOT SPECIFIED | 1.5V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B78 | 1.425V | 1.575V | 20ns | 1Gb 128M x 8 | Volatile | 1.283V~1.45V | 128MX8 | 8 | 1073741824 bit | 800MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT46V128M4TG-6T:D TR | Micron Technology Inc. | 15.9678 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2006 | Obsolete | 4 (72 Hours) | Non-RoHS Compliant | 66-TSSOP (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SDRAM - DDR | MT46V128M4 | 700ps | 512Mb 128M x 4 | Volatile | 2.3V~2.7V | 167MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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25AA080T/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | yes | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | DATA RETENTION > 200 YEARS; 4KV ESD PROTECTION; 1M ENDURANCE CYCLES | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 8 kb | Surface Mount | 0°C~70°C TA | CMOS | 1 | 5mA | e3 | DUAL | 260 | 2.5V | 40 | 25AA080 | 8 | 1.27mm | 2/5V | 5.5V | 475 ns | 8Kb 1K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 1MHz | 0.000001A | 200 | 10000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS46LR16320C-6BLA1 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Tray | Active | 3 (168 Hours) | 60 | 1.8V | 1 | 10mm | ROHS3 Compliant | 60 | AUTO/SELF REFRESH | 60-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | SYNCHRONOUS | 60mA | 1.1mm | 1 | BOTTOM | 1.8V | YES | 0.8mm | 1.7V | Not Qualified | 1.95V | 3-STATE | 5.5ns | AEC-Q100 | 512Mb 32M x 16 | Volatile | 1.7V~1.95V | 32MX16 | 16 | 536870912 bit | 16b | 166MHz | 0.0003A | COMMON | 8192 | DRAM | Parallel | 15ns | 24816 | 24816 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7027S35PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 100 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | TQFP | Parallel | 5.5V | 4.5V | 512 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 295mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 100 | COMMERCIAL | 0.5mm | SRAMs | 5V | 3-STATE | 35 ns | 64kB | RAM, SDR, SRAM | 30b | Asynchronous | 0.005A | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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W9812G6JB-6I TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2016 | Active | 3 (168 Hours) | ROHS3 Compliant | 54-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM | 5ns | 128Mb 8M x 16 | Volatile | 3V~3.6V | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS29GL128-70SLET | ISSI, Integrated Silicon Solution Inc | 5.7237 |
Min: 1 Mult: 1 |
0.00000000 | 2 Weeks | Tray | Active | 3 (168 Hours) | 56 | 18.4mm | ROHS3 Compliant | 56-TFSOP (0.724, 18.40mm Width) | 14mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-G56 | 2.7V | 3.6V | 70ns | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 128MX1 | 1 | 134217728 bit | 3V | FLASH | Parallel | 200μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS42S32160F-6TL-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | yes | Active | 3 (168 Hours) | 86 | 1 | 22.22mm | ROHS3 Compliant | 86 | AUTO/SELF REFRESH | 86-TFSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 0.5mm | 3V | 3.6V | 5.4ns | 512Mb 16M x 32 | Volatile | 3V~3.6V | 16MX32 | 32 | 536870912 bit | 167MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53B512M16D1Z11MWC2 MS | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Discontinued | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24LC04B-I/SNG | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Surface Mount | Tube | 2007 | yes | Active | 3 (168 Hours) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | 8 | 8-SOIC (0.154, 3.90mm Width) | I2C, Serial | 4 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.75mm | 1 | 3mA | e3 | DUAL | 260 | 40 | 24LC04B | 8 | 1.27mm | 2.5V | Not Qualified | 3/5V | 5.5V | 900ns | 4Kb 256 x 8 x 2 | Non-Volatile | 2.5V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010XXMR | NO | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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GD25LQ256DYIGR | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 256Mb 32M x 8 | Non-Volatile | 1.65V~2V | 120MHz | FLASH | SPI - Quad I/O | 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS43R16320F-6BL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 60 | EAR99 | 1 | 13mm | ROHS3 Compliant | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 60-TFBGA | 8mm | Surface Mount | 0°C~70°C TA | SDRAM - DDR | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 2.5V | NOT SPECIFIED | YES | 1mm | R-PBGA-B60 | 2.3V | 2.7V | 700ps | 512Mb 32M x 16 | Volatile | 2.3V~2.7V | 32MX16 | 16 | 536870912 bit | 166MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24AA00/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2005 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-SOIC (0.154, 3.90mm Width) | 2-Wire, I2C, Serial | 128 b | 3.91mm | Surface Mount | 0°C~70°C TA | CMOS | 1.75mm | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24AA00 | 8 | 1.27mm | 2/5V | 5.5V | 3500ns | 128b 16 x 8 | Non-Volatile | 1.8V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | 4ms | I2C | 1010XXXR | EEPROM | I2C | 4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C16M16D2-25BIN | Alliance Memory, Inc. | 3.5594 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2015 | yes | Active | 3 (168 Hours) | 84 | EAR99 | 1 | 12.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 84-TFBGA | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B84 | 1.7V | 1.9V | 400ps | 256Mb 16M x 16 | Volatile | 1.7V~1.9V | 16MX16 | 16 | 268435456 bit | 400MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS43LR16320B-6BL | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 14 Weeks | Surface Mount | Tray | yes | Active | 3 (168 Hours) | 60 | EAR99 | 1.8V | 1 | 10mm | ROHS3 Compliant | 60 | AUTO/SELF REFRESH | 60-TFBGA | 512 Mb | Surface Mount | 0°C~70°C TA | SDRAM - Mobile LPDDR | SYNCHRONOUS | 1.1mm | 8542.32.00.28 | 1 | 110mA | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 40 | 60 | 0.8mm | 1.7V | Not Qualified | 1.95V | 3-STATE | 5.5ns | 512Mb 32M x 16 | Volatile | 15b | 1.7V~1.95V | 32MX16 | 16 | 16b | 166MHz | 0.00001A | COMMON | 8192 | DRAM | Parallel | 12ns | 24816 | 24816 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT28C256F-15LM/883 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 23 Weeks | Surface Mount | Tube | 1997 | no | Active | 3 (168 Hours) | 32 | 5V | 13.97mm | Non-RoHS Compliant | Contains Lead | Lead, Tin | No | 32 | AUTOMATIC WRITE | 32-CLCC | Parallel, SPI | 256 kb | 150GHz | 11.43mm | Surface Mount | -55°C~125°C TC | CMOS | 2.54mm | 1 | 50mA | e0 | TIN LEAD | QUAD | 225 | 5V | 30 | AT28C256 | 1.27mm | 5V | 3-STATE | 150ns | MIL-STD-883 Class C | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | 8 | 0.0003A | 10000 Write/Erase Cycles | 3ms | 5V | YES | YES | 64words | EEPROM | Parallel | 3ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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25AA02E48T-I/OT | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 5V | 2.95mm | ROHS3 Compliant | Lead Free | Tin | No | 6 | SOT-23-6 | SPI, Serial | No SVHC | 2 kb | 1.1mm | 1.63mm | Surface Mount | -40°C~85°C TA | CMOS | 8542.32.00.51 | 1 | 5mA | e3 | DUAL | 260 | 2.5V | 40 | 25AA02E48 | 6 | 0.95mm | 1.8V | 50 ns | 2Kb 256 x 8 | Non-Volatile | 48b | 1.8V~5.5V | 10MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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71T75802S100BG | Renesas Electronics America Inc. | 43.3979 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tray | Active | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 119-PBGA (14x22) | 5ns | 18Mb 1M x 18 | Volatile | 2.375V~2.625V | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S34ML08G201BHI003 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | 63 | 11mm | RoHS Compliant | 9mm | CMOS | ASYNCHRONOUS | 1mm | 1 | BOTTOM | BALL | 3.3V | INDUSTRIAL | YES | 0.8mm | R-PBGA-B63 | 2.7V | 85°C | -40°C | 3.6V | 1GX8 | 8 | 8589934592 bit | FLASH | PARALLEL | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT42L128M32D2KL-25 IT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2012 | Obsolete | 3 (168 Hours) | 168 | 1 | 12mm | ROHS3 Compliant | SELF REFRESH; IT ALSO REQUIRES 1.2V NOM | 168-WFBGA | 12mm | Surface Mount | -25°C~85°C TC | SDRAM - Mobile LPDDR2 | SYNCHRONOUS | 0.8mm | 1 | BOTTOM | 1.8V | MT42L128M32 | YES | 0.5mm | S-PBGA-B168 | 1.7V | 1.95V | 4Gb 128M x 32 | Volatile | 1.14V~1.3V | 128MX32 | 32 | 4294967296 bit | 400MHz | MULTI BANK PAGE BURST | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CY7C1354C-166AXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tray | 2004 | NoBL™ | yes | Active | 3 (168 Hours) | 100 | 3A991.B.2.A | 3.3V | 4 | 20mm | ROHS3 Compliant | Lead Free | No | 100 | PIPELINED ARCHITECTURE | 100-LQFP | 9 Mb | Surface Mount | 657.000198mg | -40°C~85°C TA | SRAM - Synchronous, SDR | 180mA | 1.6mm | 1 | 180mA | e3 | Matte Tin (Sn) | QUAD | 250 | 3.3V | 40 | CY7C1354 | 100 | 0.65mm | 3.135V | 3.6V | 3-STATE | 3.5ns | 9Mb 256K x 36 | Volatile | 18b | 3.135V~3.6V | 256KX36 | 36 | Synchronous | 166MHz | 36b | COMMON | SRAM | Parallel |
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