Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | I2C Control Byte | Reverse Pinout | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IS62WV2568BLL-70HI | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | no | Active | 2 (1 Year) | 32 | 3A991.B.2.A | 11.8mm | Non-RoHS Compliant | 32 | 32-TFSOP (0.465, 11.80mm Width) | 8mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.25mm | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | 32 | YES | 0.5mm | 2.5V | Not Qualified | 3/3.3V | 3.6V | 3-STATE | 2Mb 256K x 8 | Volatile | 0.03mA | 2.5V~3.6V | 256KX8 | 8 | 2097152 bit | 0.00001A | 70 ns | COMMON | 1V | SRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W9812G6KH-6I | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tray | 2016 | Active | 3 (168 Hours) | 54 | 3.3V | 1 | 22.22mm | ROHS3 Compliant | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 1 Gb | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 0.8mm | R-PDSO-G54 | 3V | 3.6V | 5ns | 128Mb 8M x 16 | Volatile | 12b | 3V~3.6V | 8MX16 | 16 | 16b | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T75702S80PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | 3 (168 Hours) | 100 | 3A991.B.2.A | 70°C | 0°C | 20mm | Non-RoHS Compliant | FLOW-THROUGH ARCHITECTURE | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 2.5V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 2.375V | SRAMs | Not Qualified | 2.5V | 2.625V | 3-STATE | RAM, SRAM | 0.25mA | 512KX36 | 36 | 18874368 bit | 95MHz | 0.04A | 8 ns | COMMON | 2.38V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321L25TF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 3.3V | 2 | 10mm | RoHS Compliant | Contains Lead | No | 64 | BATTERY BACKUP;AUTOMATIC POWER DOWN | TQFP | Parallel | 3.6V | 3V | 16 kb | 10mm | 1.4mm | CMOS | 1.6mm | 1 | 100mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 64 | COMMERCIAL | 0.5mm | SRAMs | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY62256NLL-55ZXET | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | MoBL® | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | 5V | 1 | ROHS3 Compliant | Lead Free | No | 28 | 28-TSSOP (0.465, 11.80mm Width) | 256 kb | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 1 | 50mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 20 | CY62256 | 0.55mm | 5V | 3-STATE | 256Kb 32K x 8 | Volatile | 15b | 4.5V~5.5V | 32KX8 | 8 | Asynchronous | 55 ns | 8b | COMMON | 2V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "AT24C512C-U1UM-T") |
AT24C512C-U1UM-T | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 1997 | Active | 3 (168 Hours) | 8 | 3mm | ROHS3 Compliant | No | 8 | 8-UFBGA, WLCSP | Serial | 512 kb | 2mm | Surface Mount | -40°C~85°C TA | CMOS | 0.6mm | 1 | 1MHz | BOTTOM | AT24C512C | YES | 0.5mm | 1.7V | 3.6V | 900ns | 512Kb 64K x 8 | Non-Volatile | 0.003mA | 1.7V~3.6V | 8 | 400kHz | 0.000001A | 40 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C16M16MSA-6BIN | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | Active | 3 (168 Hours) | 54 | 1 | 8mm | RoHS Compliant | AUTO/SELF REFRESH | 54-VFBGA | compliant | 8mm | Surface Mount | -40°C~85°C TA | SDRAM - Mobile SDRAM | SYNCHRONOUS | 1mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | S-PBGA-B54 | 1.7V | 1.95V | 5.5ns | 256Mb 16M x 16 | Volatile | 1.7V~1.95V | 16MX16 | 16 | 268435456 bit | 166MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IS61WV51216EEBLL-10BLI | ISSI, Integrated Silicon Solution Inc | 11.9135 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 48 | 8mm | ROHS3 Compliant | 48-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.75mm | R-PBGA-B48 | 2.4V | 3.6V | 8Mb 512K x 16 | Volatile | 2.4V~3.6V | 512KX16 | 16 | 8388608 bit | 10 ns | SRAM | Parallel | 10ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29DW641F70N6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2007 | Obsolete | 3 (168 Hours) | 48 | ROHS3 Compliant | 48 | 48-TFSOP (0.724, 18.40mm Width) | unknown | 64 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 10mA | DUAL | M29DW641 | 0.5mm | Not Qualified | 3/3.3V | 64Mb 4M x 16 | Non-Volatile | 22b | 2.7V~3.6V | 4MX16 | 16 | Asynchronous | 0.0001A | 70 ns | 16b | YES | YES | YES | 16126 | 8words | YES | YES | FLASH | Parallel | 70ns | 4K32K | BOTTOM/TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY14B116N-ZSP25XI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Tray | 2014 | Active | 3 (168 Hours) | 54 | EAR99 | 3V | 22.415mm | ROHS3 Compliant | Gold | 54 | 54-TSOP (0.400, 10.16mm Width) | 16 Mb | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | 0.8mm | 2.7V | 3.6V | 16Mb 1M x 16 | Non-Volatile | 2.7V~3.6V | 1MX16 | 16 | 16b | 25 ns | NVSRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25AA040AT-I/MNY | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 19 Weeks | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 8 | EAR99 | 2mm | ROHS3 Compliant | Tin | 8 | 8-WFDFN Exposed Pad | SPI, Serial | 4 kb | 750μm | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | 5mA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 5V | 40 | 25AA040A | 8 | YES | 0.5mm | Not Qualified | 2/5V | 5.5V | 50 ns | 4Kb 512 x 8 | Non-Volatile | 1.8V~5.5V | 10MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT28LV256-20TC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2001 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 28-TSSOP (0.465, 11.80mm Width) | Surface Mount | 0°C~70°C TC | EEPROM | AT28LV256 | 28-TSOP | 200ns | 256Kb 32K x 8 | Non-Volatile | 3V~3.6V | EEPROM | Parallel | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V321L25J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 3.3V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | BATTERY BACKUP;AUTOMATIC POWER DOWN | PLCC | Parallel | 3.6V | 3V | 16 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 100mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 3.3V | 52 | COMMERCIAL | SRAMs | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7142SA100L48B | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tube | Active | 1 (Unlimited) | Non-RoHS Compliant | 48-LCC | Surface Mount | -55°C~125°C TA | SRAM - Dual Port, Asynchronous | IDT7142 | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT45DB321D-CCU | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 24-TBGA, CSPBGA | Surface Mount | -40°C~85°C TC | AT45DB321 | 32Mb 528Bytes x 8192 pages | Non-Volatile | 2.7V~3.6V | 66MHz | FLASH | SPI | 6ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416YS10PHI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | 85°C | -40°C | Non-RoHS Compliant | TSOP | Parallel | RAM, SRAM - Asynchronous | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST39SF020A-55-4C-WHE | Microchip Technology | 1.4060 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tray | 2010 | SST39 MPF™ | yes | Active | 3 (168 Hours) | 32 | 3A991.B.1.A | 5V | 12.4mm | ROHS3 Compliant | Lead Free | No | 32 | 32-TFSOP (0.488, 12.40mm Width) | 2 Mb | Surface Mount | 0°C~70°C TA | CMOS | 1.2mm | 1 | 25mA | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | SST39SF020A | 32 | YES | 0.5mm | 5V | 55ns | 2Mb 256K x 8 | Non-Volatile | 18b | 4.5V~5.5V | 256KX8 | 8 | Asynchronous | 8b | 0.0001A | 8b | 5V | YES | YES | YES | 64 | FLASH | Parallel | 20μs | 4K | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V65602S100BG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 3 (168 Hours) | 119 | 3A991.B.2.A | 70°C | 0°C | 22mm | Non-RoHS Compliant | PIPELINED ARCHITECTURE | BGA | Parallel | not_compliant | 100MHz | 14mm | CMOS | SYNCHRONOUS | 2.36mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 119 | COMMERCIAL | YES | 1.27mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.25mA | 256KX36 | 36 | 9437184 bit | 0.04A | 5 ns | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61LPS12836EC-200B3LI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 165 | 165-TFBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 3.1ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24AA256T-E/MF | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 6mm | ROHS3 Compliant | 8 | 8-VDFN Exposed Pad | I2C, Serial | 256 kb | 5mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 1mm | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 260 | 40 | 24AA256 | 8 | 1.27mm | 1.7V | Not Qualified | 5.5V | 900ns | 256Kb 32K x 8 | Non-Volatile | 1.7V~5.5V | 8 | 400kHz | 0.000005A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | NO | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C128A-35PC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2001 | Obsolete | 3 (168 Hours) | 24 | EAR99 | 5V | 1 | 30.099mm | Non-RoHS Compliant | Contains Lead | No | 24 | AUTOMATIC POWER-DOWN | 24-DIP (0.300, 7.62mm) | 16 kb | 35GHz | Through Hole | 0°C~70°C TA | SRAM - Asynchronous | 4.826mm | 1 | 100mA | e0 | Tin/Lead (Sn/Pb) | DUAL | 5V | CY7C128A | 24 | 2.54mm | 5V | 3-STATE | 16Kb 2K x 8 | Volatile | 11b | 4.5V~5.5V | 2KX8 | 8 | Asynchronous | 0.02A | 35 ns | 8b | YES | COMMON | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL064LABMFA001 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 2 Weeks | Tube | Automotive, AEC-Q100, FL-L | Active | 3 (168 Hours) | 16 | 10.3mm | ROHS3 Compliant | IT IS ALSO CONFIGURED AS 64M X 1 | 16-SOIC (0.295, 7.50mm Width) | 7.5mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 8542.32.00.51 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G16 | 2.7V | 3.6V | 64Mb 8M x 8 | Non-Volatile | 2.7V~3.6V | 16MX4 | 4 | 67108864 bit | SERIAL | 108MHz | 2 | 3V | FLASH | SPI - Quad I/O, QPI | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS1220AB-100IND+ | Maxim Integrated | 14.9435 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tube | 2004 | yes | Active | 1 (Unlimited) | 24 | EAR99 | 33.02mm | ROHS3 Compliant | 24-DIP Module (0.600, 15.24mm) | not_compliant | 15.24mm | Through Hole | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 10.668mm | 8473.30.11.40 | 1 | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1220A | 24 | NO | 2.54mm | R-PDMA-P24 | 4.75V | SRAMs | Not Qualified | 5V | 5.25V | 16Kb 2K x 8 | Non-Volatile | 0.085mA | 4.75V~5.25V | 2KX8 | 8 | 16384 bit | 0.01A | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V67703S75BG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 3.3V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | FLOW-THROUGH ARCHITECTURE | BGA | Parallel | 3.465V | 3.135V | 9 Mb | 117MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 265mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 119 | COMMERCIAL | SRAMs | 3-STATE | 7.5 ns | 117MHz | 1.1MB | RAM, SDR, SRAM | 18b | 256KX36 | Synchronous | 0.05A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT44K64M18RB-107E:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 168 | EAR99 | 1.35V | 1 | 13.5mm | RoHS Compliant | Lead Free | AUTO REFRESH | 168-TBGA | 13.5mm | Surface Mount | 0°C~95°C TC | CMOS | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 1.35V | YES | 1mm | S-PBGA-B168 | 1.28V | 1.42V | 8ns | 1.125Gb 64Mb x 18 | Volatile | 1.28V~1.42V | 64MX18 | 18 | 1207959552 bit | 933MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT93C86A-10TU-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | yes | Active | 3 (168 Hours) | 8 | 5V | 4.5mm | ROHS3 Compliant | Lead Free | Tin | 8 | 8-TSSOP (0.173, 4.40mm Width) | Serial | 16 kb | 1.05mm | 3.1mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | 2mA | e3 | DUAL | 260 | 2.7V | 40 | AT93C86A | 0.65mm | Not Qualified | 16Kb 2K x 8 1K x 16 | Non-Volatile | 1.8V~5.5V | 1KX16 | PARALLEL | 2MHz | 1e-7A | 100 | 1000000 Write/Erase Cycles | SOFTWARE | 10ms | MICROWIRE | EEPROM | SPI | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS66WVE4M16ECLL-70BLI | ISSI, Integrated Silicon Solution Inc | 4.4038 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tray | Active | 3 (168 Hours) | 48 | 1 | 8mm | ROHS3 Compliant | 48-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | PSRAM (Pseudo SRAM) | ASYNCHRONOUS | 1.2mm | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NOT SPECIFIED | NOT SPECIFIED | YES | 0.75mm | R-PBGA-B48 | 1.7V | 1.95V | 3-STATE | 64Mb 4M x 16 | Volatile | 0.025mA | 1.7V~1.95V | 4MX16 | 16 | 67108864 bit | 0.00015A | 70 ns | NO | COMMON | NO | 1.7V | PSRAM | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29CL016J0JQFM030 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | CL-J | Active | 3 (168 Hours) | 80 | EAR99 | 3.3V | 20mm | ROHS3 Compliant | No | 80 | 80-BQFP | 16 Mb | Surface Mount | -40°C~125°C TA | FLASH - NOR | 3.35mm | 8542.32.00.51 | 1 | e3 | MATTE TIN | QUAD | 260 | 3.3V | 40 | YES | 0.8mm | 3V | 3.6V | 54ns | 16Mb 512K x 32 | Non-Volatile | 19b | 0.09mA | 1.65V~3.6V | 512KX32 | 32 | 40MHz | 0.00006A | YES | YES | YES | 1630 | YES | YES | FLASH | Parallel | 60ns | 2K16K | BOTTOM | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS62WV5128DALL-55BI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Discontinued | 3 (168 Hours) | ROHS3 Compliant | 36 | 36-TFBGA | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 36-TFBGA (6x8) | 55ns | 4Mb 512K x 8 | Volatile | 1.65V~2.2V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24AA32A/P | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2006 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8-DIP (0.300, 7.62mm) | I2C, Serial | 32 kb | Through Hole | 0°C~70°C TA | CMOS | 1 | 3mA | e3 | Matte Tin (Sn) | DUAL | 2.5V | 24AA32A | 8 | 2.54mm | 6V | 900ns | 32Kb 4K x 8 | Non-Volatile | 1.8V~5.5V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms |
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