SI7623DN-T1-GE3 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 20 mJ.A device's maximum input capacitance is 5460pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.This device has a continuous drain current (ID) of [-35A], which is its maximum continuous current.With a drain-source breakdown voltage of -20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -20V.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.In this case, the threshold voltage of the transistor is -400mV, which means that it will not activate any of its functions when its threshold voltage reaches -400mV.Operating this transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.5V 10V).

SI7623DN-T1-GE3 Features

the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of -35A
a drain-to-source breakdown voltage of -20V voltage
a threshold voltage of -400mV
a 20V drain to source voltage (Vdss)

SI7623DN-T1-GE3 Applications

There are a lot of Vishay Siliconix SI7623DN-T1-GE3 applications of single MOSFETs transistors.

Telecom 1 Sever Power Supplies
Uninterruptible Power Supply
LCD/LED TV
Server power supplies
Industrial Power Supplies
DC/DC converters
Motor drives and Uninterruptible Power Supplies
Lighting
General Purpose Interfacing Switch
Battery Protection Circuit

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