FQI27N25TU-F085 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 600 mJ.A device's maximal input capacitance is 1800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25.5A. The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 81 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 36 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 250V in order to maintain normal operation.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.This device reduces its overall power consumption by using drive voltage (10V).

FQI27N25TU-F085 Features

the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 25.5A
the turn-off delay time is 81 ns
a 250V drain to source voltage (Vdss)

FQI27N25TU-F085 Applications

There are a lot of ON Semiconductor FQI27N25TU-F085 applications of single MOSFETs transistors.

Power Tools
Industrial Power Supplies
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Motor drives and Uninterruptible Power Supplies
Synchronous Rectification
Battery Protection Circuit
Motor control
LCD/LED/ PDP TV Lighting
AC-DC Power Supply
Uninterruptible Power Supply

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