IRF1405ZSTRLPBF Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 420 mJ.The maximum input capacitance of this device is 4780pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 48 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 600A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Its overall power consumption can be reduced by using drive voltage (10V).

IRF1405ZSTRLPBF Features

the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 600A.

IRF1405ZSTRLPBF Applications

There are a lot of Infineon Technologies IRF1405ZSTRLPBF applications of single MOSFETs transistors.

Load switching
Power Management Functions
Telecom 1 Sever Power Supplies
LCD/LED TV
DC/DC converters
Micro Solar Inverter
Synchronous Rectification
Consumer Appliances
AC-DC Power Supply
Uninterruptible Power Supply

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