IPD65R600C6BTMA1 Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 142 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 440pF @ 100V maximal input capacitance.Its continuous drain current is 7.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Peak drain current is 18A, which is the maximum pulsed drain current.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.The maximum dual supply voltage can be supported by 650V.By using drive voltage (10V), this device helps reduce its overall power consumption.

IPD65R600C6BTMA1 Features

the avalanche energy rating (Eas) is 142 mJ
a continuous drain current (ID) of 7.3A
the turn-off delay time is 80 ns
based on its rated peak drain current 18A.

IPD65R600C6BTMA1 Applications

There are a lot of Infineon Technologies IPD65R600C6BTMA1 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Motor Drives and Uninterruptible Power Supples
Uninterruptible Power Supply
LCD/LED/ PDP TV Lighting
AC-DC Power Supply
Power Management Functions
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Synchronous Rectification for ATX 1 Server I Telecom PSU
Server power supplies
LCD/LED TV

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