
Items : %s%s
Single IGBTs
Additional Feature
- AVALANCHE RATED
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS
- LOW CONDUCTION LOSS, AVALANCHE RATED
- LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- LOW SATURATION VOLTAGE
- UL RECOGNIZED, HIGH RELIABILITY
- ULTRA FAST
- ULTRA FAST SOFT RECOVERY
- ULTRA FAST SWITCHING
Contact Plating
- Tin
ECCN Code
- EAR99
Factory Lead Time
- 10 Weeks
- 11 Weeks
- 12 Weeks
- 13 Weeks
- 14 Weeks
- 15 Weeks
- 16 Weeks
- 18 Weeks
- 20 Weeks
- 21 Weeks
- 22 Weeks
- 23 Weeks
- 24 Weeks
- 25 Weeks
- 26 Weeks
- 30 Weeks
- 33 Weeks
- 36 Weeks
- 38 Weeks
- 4 Weeks
- 44 Weeks
- 5 Weeks
- 50 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
- 9 Weeks
- 99 Weeks
JESD-609 Code
- e1
- e3
Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- ACTIVE (Last Updated: 1 week ago)
- ACTIVE (Last Updated: 11 hours ago)
- ACTIVE (Last Updated: 12 hours ago)
- ACTIVE (Last Updated: 13 hours ago)
- ACTIVE (Last Updated: 15 hours ago)
- ACTIVE (Last Updated: 2 days ago)
- ACTIVE (Last Updated: 3 days ago)
- ACTIVE (Last Updated: 4 days ago)
- ACTIVE (Last Updated: 5 days ago)
- ACTIVE (Last Updated: 6 days ago)
- ACTIVE (Last Updated: 7 months ago)
- ACTIVE (Last Updated: 8 hours ago)
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- ACTIVE, NOT REC (Last Updated: 1 week ago)
- ACTIVE, NOT REC (Last Updated: 10 hours ago)
- ACTIVE, NOT REC (Last Updated: 12 hours ago)
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- ACTIVE, NOT REC (Last Updated: 2 weeks ago)
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- ACTIVE, NOT REC (Last Updated: 5 days ago)
- ACTIVE, NOT REC (Last Updated: 6 days ago)
- LAST SHIPMENTS (Last Updated: 2 days ago)
- LAST SHIPMENTS (Last Updated: 4 days ago)
Manufacturer Package Identifier
- D2PAK-3 CASE 418AJ ISSUE B
Max Operating Temperature
- 150°C
- 175°C
Min Operating Temperature
- -55°C
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Not Applicable
Mount
- Surface Mount
- Surface Mount, Through Hole
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 2
- 247
- 3
- 4
- 6
Number of Terminations
- 2
- 3
- 6
Operating Temperature
- -40°C~150°C TJ
- -40°C~175°C TJ
- -55°C~150°C TJ
- -55°C~175°C TJ
Package / Case
- i4-Pac™-5 (3 Leads)
- TO-220-3
- TO-220-3 Full Pack
- TO-247-3
- TO-247-3 Variant
- TO-247-4
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TO-262-3 Long Leads, I2Pak, TO-262AA
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- TO-264-3, TO-264AA
- TO-274AA
- TO-3P-3 Full Pack
- TO-3P-3, SC-65-3
Packaging
- Bulk
- Cut Tape (CT)
- Tape & Reel (TR)
- Tube
Part Status
- Active
- Last Time Buy
- Not For New Designs
- Obsolete
Pbfree Code
- no
- yes
Published
- 1997
- 1998
- 1999
- 2000
- 2001
- 2002
- 2003
- 2004
- 2005
- 2006
- 2007
- 2008
- 2009
- 2010
- 2011
- 2012
- 2013
- 2014
- 2015
- 2016
- 2017
Series
- Automotive, AEC-Q101
- Automotive, AEC-Q101, EcoSPARK®
- BIMOSFET™
- EcoSPARK®
- GenX3™
- PowerMESH™
- TrenchStop®
- TrenchStop™
Supplier Device Package
- TO-220AB
- TO-247AC
Surface Mount
- NO
Terminal Finish
- MATTE TIN
- Matte Tin (Sn)
- Matte Tin (Sn) - with Nickel (Ni) barrier
- MATTE TIN OVER NICKEL
- TIN
- Tin (Sn)
- TIN SILVER COPPER
- Tin/Silver/Copper (Sn/Ag/Cu)
Termination
- SMD/SMT
- Through Hole
Transistor Element Material
- SILICON
Weight
- 1.31247g
- 1.312g
- 1.8g
- 2.084g
- 2.240009g
- 2.27g
- 2.299997g
- 260.37mg
- 260.39037mg
- 2g
- 350.003213mg
- 38.000013g
- 6.000006g
- 6.289g
- 6.39g
- 6.401g
- 6.500007g
- 6.756g
- 6.962g
- 7.629g
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Rise Time-Max | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Continuous Collector Current | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
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IXSH10N60B2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Bulk | 2004 | yes | Obsolete | Not Applicable | 3 | 16.26mm | RoHS Compliant | Lead Free | 20A | 3 | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | 600V | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXS*10N60 | 3 | Not Qualified | 100W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 100W | 25 ns | 20A | 600V | 600V | POWER CONTROL | SILICON | 30ns | 2.5V | 60 ns | 2.5V @ 15V, 10A | 530 ns | PT | 480V, 10A, 30 Ω, 15V | 17nC | 30A | 30ns/180ns | 430μJ (off) | ||||||||||||||||||||||||||||||||||||
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IRG4BC10SDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Through Hole | Tube | 2007 | Obsolete | 1 (Unlimited) | 150°C | -55°C | 10.54mm | RoHS Compliant | Lead Free | 14A | No | 3 | TO-220-3 | 8.77mm | 4.69mm | Through Hole | -55°C~150°C TJ | 600V | Standard | 38W | 38W | Single | 38W | TO-220AB | 28 ns | 14A | 600V | 1.8V | 32ns | 1.7V | 1.8V @ 15V, 8A | 600V | 14A | 480V, 8A, 100Ohm, 15V | 15nC | 18A | 76ns/815ns | 310μJ (on), 3.28mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||
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IGB20N60H3ATMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | TrenchStop® | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 30N60 | 4 | R-PSSO-G2 | Not Qualified | 170W | 1 | COLLECTOR | Halogen Free | N-CHANNEL | Single | 40A | 600V | POWER CONTROL | SILICON | 31 ns | 2.4V @ 15V, 20A | 241 ns | Trench Field Stop | 400V, 20A, 14.6 Ω, 15V | 120nC | 80A | 16ns/194ns | 690μJ | ||||||||||||||||||||||||||||||||||||||||||
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IXGX82N120A3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Through Hole | Tube | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 1.25kW | 1250W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 260A | 1.2kV | 2.05V | POWER CONTROL | SILICON | 109 ns | 2.05V @ 15V, 82A | 1590 ns | PT | 20V | 1200V | 5V | 600V, 80A, 2 Ω, 15V | 340nC | 580A | 34ns/265ns | 5.5mJ (on), 12.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||
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STGD3NB60SD-1 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | PowerMESH™ | Obsolete | 3 (168 Hours) | EAR99 | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 175°C TJ | Standard | e3 | Matte Tin (Sn) - annealed | STGD3 | Insulated Gate BIP Transistors | 48W | 48W | N-CHANNEL | Single | 1.7 μs | 6A | 600V | 600V | 1.5V @ 15V, 3A | 20V | 4.5V | 480V, 3A, 1k Ω, 15V | 18nC | 25A | 125μs/3.4μs | 1.1mJ (on), 1.15mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SKB15N60ATMA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 26 Weeks | Tape & Reel (TR) | 2008 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | Surface Mount | -55°C~150°C TJ | Standard | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | *KB15N60 | 3 | YES | R-PSSO-G2 | Not Qualified | 139W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 279ns | POWER CONTROL | SILICON | 54 ns | 2.4V @ 15V, 15A | 315 ns | NPT | 600V | 31A | 400V, 15A, 21 Ω, 15V | 76nC | 62A | 32ns/234ns | 570μJ | ||||||||||||||||||||||||||||||||||||||||||||
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IXGH20N100 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2000 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*20N100 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 40A | 1kV | 1kV | 200ns | POWER CONTROL | SILICON | 30 ns | 3V @ 15V, 20A | 700 ns | PT | 1000V | 5V | 2000ns | 800V, 20A, 47 Ω, 15V | 73nC | 80A | 30ns/350ns | 3.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||
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IXGA36N60A3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 30 Weeks | 2013 | GenX3™ | yes | Active | 2 | 2 | Non-RoHS Compliant | LOW CONDUCTION LOSS | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 220W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 220W | 23ns | POWER CONTROL | SILICON | 43 ns | 1.4V @ 15V, 30A | 1000 ns | PT | 20V | 600V | 5.5V | 400V, 30A, 5 Ω, 15V | 80nC | 200A | 18ns/330ns | 740μJ (on), 3mJ (off) | |||||||||||||||||||||||||||||||||||||||||
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IRG4IBC20FD | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2000 | Obsolete | 1 (Unlimited) | 3 | Non-RoHS Compliant | ULTRA FAST SOFT RECOVERY | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | Not Qualified | 34W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | N-CHANNEL | 37ns | POWER CONTROL | SILICON | 63 ns | 2V @ 15V, 9A | 610 ns | 600V | 14.3A | 480V, 9A, 50 Ω, 15V | 27nC | 64A | 43ns/240ns | 250μJ (on), 640μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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RJH60V2BDPP-M0#T2 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-220-3 Full Pack | Through Hole | 150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | RJH60V | 3 | Insulated Gate BIP Transistors | 34W | 34W | N-CHANNEL | Single | 25 ns | 25A | 600V | 2.2V | 2.2V @ 15V, 12A | Trench | 300V, 12A, 5 Ω, 15V | 32nC | 33ns/65ns | 30μJ (on), 180μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRG4IBC20W | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2000 | Obsolete | 1 (Unlimited) | 3 | Non-RoHS Compliant | LOW CONDUCTION LOSS | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | Not Qualified | 34W | 1 | SINGLE | TO-220AB | ISOLATED | N-CHANNEL | POWER CONTROL | SILICON | 36 ns | 2.6V @ 15V, 6.5A | 300 ns | 600V | 11.8A | 480V, 6.5A, 50 Ω, 15V | 26nC | 52A | 22ns/110ns | 60μJ (on), 80μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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STGB20NC60VT4 | STMicroelectronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tape & Reel (TR) | PowerMESH™ | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STGB20 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | 200W | 200W | 1 | N-CHANNEL | Single | 600V | 60A | 600V | 600V | POWER CONTROL | SILICON | 42.5 ns | 2.5V @ 15V, 20A | 280 ns | 20V | 5.75V | 390V, 20A, 3.3 Ω, 15V | 100nC | 100A | 31ns/100ns | 220μJ (on), 330μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
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IXGA16N60C2D1 | IXYS | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2010 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 1.59999g | -55°C~150°C TJ | Standard | Pure Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*16N60 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | COLLECTOR | N-CHANNEL | Single | 30ns | 40A | 600V | 600V | POWER CONTROL | SILICON | 3V | 43 ns | 3V @ 15V, 12A | 190 ns | PT | 20V | 5.5V | 400V, 12A, 22 Ω, 15V | 25nC | 100A | 16ns/75ns | 160μJ (on), 90μJ (off) | ||||||||||||||||||||||||||||||||||||||||
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IXGK400N30A3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 20 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | TO-264-3, TO-264AA | unknown | Through Hole | 10.000011g | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | IXG*400N30 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 1kW | 1000W | 1 | COLLECTOR | N-CHANNEL | Single | 1kW | 45 ns | 400A | 300V | 1.15V | POWER CONTROL | 210 ns | SILICON | 1.15V | 100 ns | 1.15V @ 15V, 100A | 555 ns | PT | 20V | 5V | 560nC | 1200A | |||||||||||||||||||||||||||||||||||||
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IXGT24N60C | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tube | 2000 | HiPerFAST™, Lightspeed™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | FAST SWITCHING | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*24N60 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | COLLECTOR | N-CHANNEL | Single | 48A | 600V | 600V | POWER CONTROL | SILICON | 15 ns | 2.5V @ 15V, 24A | 130 ns | 20V | 5V | 110ns | 480V, 24A, 10 Ω, 15V | 55nC | 96A | 15ns/75ns | 240μJ (off) | ||||||||||||||||||||||||||||||||||||||
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IKP06N60TXKSA1 | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Through Hole | Tube | 2008 | TrenchStop® | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -40°C~175°C TJ | Standard | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 88W | 88W | 1 | TO-220AB | COLLECTOR | Halogen Free | N-CHANNEL | Single | 123 ns | 12A | 600V | 600V | POWER CONTROL | SILICON | 17 ns | 2.05V @ 15V, 6A | 249 ns | Trench Field Stop | 400V, 6A, 23 Ω, 15V | 42nC | 18A | 9ns/130ns | 200μJ | ||||||||||||||||||||||||||||||||||||||||||
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IXGQ50N60B4D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2011 | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | LOW CONDUCTION LOSS | TO-3P-3, SC-65-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | 2 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 300W | 25 ns | 100A | 600V | 1.8V | POWER CONTROL | SILICON | 1.4V | 76 ns | 1.8V @ 15V, 36A | 500 ns | PT | 20V | 6.5V | 400V, 36A, 10 Ω, 15V | 110nC | 230A | 37ns/330ns | 930μJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
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NGTD17T65F2SWK | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | Tape & Reel (TR) | 2016 | yes | Active | ROHS3 Compliant | Lead Free | Die | Surface Mount | -55°C~175°C TJ | Standard | 2V @ 15V, 40A | Trench Field Stop | 650V | 160A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IXGR40N60B2D1 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Through Hole | Tube | 2004 | HiPerFAST™ | yes | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | RoHS Compliant | Lead Free | 3 | ISOPLUS247™ | No SVHC | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*40N60 | 3 | Not Qualified | 167W | 1 | NPN | ISOLATED | Single | 167W | 25 ns | 60A | 600V | 1.9V | POWER CONTROL | SILICON | 82ns | 1.9V | 38 ns | 1.9V @ 15V, 30A | 390 ns | PT | 400V, 30A, 3.3 Ω, 15V | 100nC | 200A | 18ns/130ns | 400μJ (off) | |||||||||||||||||||||||||||||||||||||||
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IXGP2N100 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Through Hole | Tube | 2000 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | 8541.29.00.95 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 25W | 25W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 4A | 1kV | 1kV | POWER CONTROL | SILICON | 100 ns | 2.7V @ 15V, 2A | 100 ns | 20V | 1000V | 8V | 800V, 2A, 150 Ω, 15V | 7.8nC | 8A | 15ns/300ns | 560μJ (off) | |||||||||||||||||||||||||||||||||||||||||
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IXYH20N120C3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | EAR99 | 16.26mm | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-247-3 | not_compliant | 21.46mm | 5.3mm | Through Hole | -55°C~175°C TJ | Standard | 8541.90.00.00 | NOT SPECIFIED | NOT SPECIFIED | IXY*20N120 | Insulated Gate BIP Transistors | 278W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 278W | 40A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 4V | 60 ns | 3.4V @ 15V, 20A | 220 ns | 20V | 1200V | 5V | 600V, 20A, 10 Ω, 15V | 53nC | 96A | 20ns/90ns | 1.3mJ (on), 500μJ (off) | ||||||||||||||||||||||||||||||||||||||
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GPA060A060MN-FD | SemiQ | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-3 | Through Hole | -55°C~150°C TJ | Standard | 347W | TO-3PN | 140ns | 2.3V @ 15V, 60A | Trench Field Stop | 600V | 120A | 400V, 60A, 10Ohm, 15V | 225nC | 180A | 45ns/150ns | 2.66mJ (on), 1.53mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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RGTH40TS65GC11 | ROHM Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 17 Weeks | Through Hole | Tube | 2014 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-247-3 | Unknown | Through Hole | 38.000013g | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 144W | 144W | 1 | N-CHANNEL | Single | 40A | 650V | 650V | POWER CONTROL | SILICON | 1.6V | 47 ns | 2.1V @ 15V, 20A | 141 ns | Trench Field Stop | 20A | 400V, 20A, 10 Ω, 15V | 40nC | 80A | 22ns/73ns | ||||||||||||||||||||||||||||||||||||||||||||||||
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IXGP70N33TBM-A | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Through Hole | Tube | 2001 | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | Through Hole | 2.299997g | Standard | 330V | 330V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NGB8206NG | ON Semiconductor | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tube | 2009 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | Lead Free | 20A | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | 350V | Logic | e3 | Tin (Sn) | SINGLE | GULL WING | 260 | 40 | NGB8206 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 150W | 1 | SINGLE WITH BUILT-IN DIODE AND RESISTOR | COLLECTOR | N-CHANNEL | 150W | 20A | 390V | 1.9V | 8000ns | AUTOMOTIVE IGNITION | SILICON | 6500 ns | 1.9V @ 4.5V, 20A | 18500 ns | 15V | 2.1V | 14000ns | 300V, 9A, 1k Ω, 5V | 50A | -/5μs | ||||||||||||||||||||||||||||||||||||||
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IXYP15N65C3 | IXYS / Littelfuse | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 24 Weeks | Through Hole | Tube | 2014 | GenX3™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | Standard | 200W | 200W | 38A | 650V | 2.5V | 2.5V @ 15V, 15A | PT | 400V, 15A, 20 Ω, 15V | 19nC | 80A | 15ns/68ns | 270μJ (on), 230μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRGS4715DTRRPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -40°C~175°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | 100W | 100W | 86 ns | 21A | 650V | 2V | 2V @ 15V, 8A | 400V, 8A, 50 Ω, 15V | 30nC | 24A | 30ns/100ns | 200μJ (on), 90μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRG4PSH71UDPBF | Infineon Technologies | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Through Hole | Bulk | 2004 | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 99A | No | 3 | ULTRA FAST SWITCHING | TO-274AA | No SVHC | 15.24mm | 4.699mm | Through Hole | -55°C~150°C TJ | 1.2kV | Standard | Insulated Gate BIP Transistors | 350W | 1 | COLLECTOR | N-CHANNEL | Single | 350W | 46 ns | 110 ns | 99A | 1.2kV | 2.7V | POWER CONTROL | 350 ns | SILICON | 77ns | 2.52V | 121 ns | 2.7V @ 15V, 70A | 810 ns | 20V | 1200V | 6V | 960V, 70A, 5 Ω, 15V | 380nC | 200A | 46ns/250ns | 8.8mJ (on), 9.4mJ (off) | ||||||||||||||||||||||||||||||||||||
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NGTG50N60FLWG | Rochester Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Last Time Buy | 3 (168 Hours) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | 223W | TO-247 | 1.9V @ 15V, 50A | Trench | 600V | 100A | 400V, 50A, 10Ohm, 15V | 310nC | 200A | 116ns/292ns | 1.1mJ (on), 600μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DGTD65T60S2PT | Diodes Incorporated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 22 Weeks | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | not_compliant | Through Hole | -40°C~175°C TJ | Standard | 428W | 205ns | 2.4V @ 15V, 60A | Field Stop | 650V | 100A | 400V, 60A, 7 Ω, 15V | 95nC | 180A | 42ns/142ns | 920μJ (on), 530μJ (off) |
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IRG4BC10SDPBF Infineon Technologies
IRG4BC10SDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW
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IKP06N60TXKSA1 Infineon Technologies
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NGTD17T65F2SWK ON Semiconductor
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IXGR40N60B2D1 IXYS / Littelfuse
IXYS SEMICONDUCTOR IXGR40N60B2D1 IGBT Single Transistor, Isolated, 60 A, 1.9 V, 167 W, 600 V, TO-247AD, 3 Pins
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NGB8206NG ON Semiconductor
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