Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Serial Bus Type | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DS1350WP-100IND+ | Maxim Integrated | 74.5564 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Tray | 2000 | yes | Active | 3 (168 Hours) | 34 | 3A991.B.2.A | 3.3V | ROHS3 Compliant | Lead Free | 34 | 34-PowerCap™ Module | 4 Mb | 100GHz | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8473.30.11.40 | 1 | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | DS1350W | 34 | YES | 3V | SRAMs | Not Qualified | 3.6V | 4Mb 512K x 8 | Non-Volatile | 0.05mA | 3V~3.6V | 512KX8 | 8 | 8b | 0.00015A | 100 ns | NVSRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
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DS24B33Q+T&R | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Active | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | No | 6 | 6-WDFN Exposed Pad | Serial | 5.25V | Unknown | 2.8V | 4 kb | Surface Mount | -40°C~85°C TA | EEPROM | DS24B33 | 6-TDFN-EP (3x3) | 2μs | 4Kb 256 x 16 | Non-Volatile | 2.8V~5.25V | EEPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS25LV02R+T&R | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2006 | Obsolete | 1 (Unlimited) | 85°C | -30°C | ROHS3 Compliant | Lead Free | No | 5 | SOT-23-5 Thin, TSOT-23-5 | Serial | 1 kb | Surface Mount | -30°C~85°C TA | EPROM - OTP | DS25LV02 | TSOT-23-5 | 15μs | 1Kb 1K x 1 | Non-Volatile | 2.2V~5.5V | EPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3556S166BQGI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 3 (168 Hours) | 165 | 3A991.B.2.A | 85°C | -40°C | 15mm | RoHS Compliant | 165 | Parallel | unknown | 166MHz | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 3.3V | 30 | 165 | INDUSTRIAL | YES | 1mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.36mA | 128KX36 | 36 | 4718592 bit | 0.045A | 3.5 ns | COMMON | 3.14V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS24B33S+ | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MX25U1633FM1I | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 10 Weeks | Tape & Reel (TR) | MXSMIO™ | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 16M 2M x 8 | Non-Volatile | 1.65V~2V | 80MHz | FLASH | SPI - Quad I/O | 100μs, 4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT25040B-MAPD-E | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | 8 | 3mm | 8-UFDFN Exposed Pad | compliant | 2mm | Surface Mount | -40°C~125°C TA | CMOS | SYNCHRONOUS | 0.6mm | 1 | DUAL | 5V | YES | 0.5mm | R-PDSO-N8 | 2.5V | 5.5V | 4Kb 512 x 8 | Non-Volatile | 2.5V~5.5V | 512X8 | 8 | 4096 bit | SERIAL | 5MHz | 5ms | SPI | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS2506 | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | 2008 | no | Obsolete | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | Contains Lead | MICROLAN COMPATIBLE | TO-226-3, TO-92-3 Long Body | not_compliant | Through Hole | -40°C~85°C TA | EPROM - OTP | ASYNCHRONOUS | 8542.32.00.71 | 1 | e0 | Tin/Lead (Sn85Pb15) | BOTTOM | 240 | 5V | 20 | DS2506 | 3 | NO | 1.27mm | O-PBCY-T3 | 2.8V | Other Memory ICs | Not Qualified | 3/5V | 6V | 2μs | 64Kb 64K x 1 | Non-Volatile | 64KX1 | 1 | 65536 bit | SERIAL | COMMON | EPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "DS28E07+W") |
DS28E07+W | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | Obsolete | 1 (Unlimited) | ROHS3 Compliant | -40°C~85°C TA | EEPROM | DS28E07 | 2μs | 1Kb 256 x 4 | Non-Volatile | 3V~5.25V | EEPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS1250WP-150 | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2006 | no | Obsolete | 3 (168 Hours) | 34 | 3A991.B.2.A | 3.3V | Non-RoHS Compliant | Contains Lead | No | 34 | 34-PowerCap™ Module | 4 Mb | 150GHz | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | 8473.30.11.40 | 1 | e0 | TIN LEAD | DUAL | 3.3V | DS1250W | 34 | YES | 3V | SRAMs | 3.6V | 4Mb 512K x 8 | Non-Volatile | 0.085mA | 3V~3.6V | 512KX8 | 8 | 8b | 0.00015A | 150 ns | NVSRAM | Parallel | 150ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS2502P-E48+T&R | Maxim Integrated | 7.9607 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel (TR) | 2003 | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | 6 | 6-LSOJ (0.148, 3.76mm Width) | Surface Mount | -40°C~85°C TA | EPROM - OTP | DS2502 | 6-TSOC | 1Kb 128 x 8 | Non-Volatile | 2.8V~6V | EPROM | 1-Wire® | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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M29W640GL70ZF6F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 64-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | M29W640 | 64Mb 8M x 8 4M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PC28F512P30TFA | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Tray | 2008 | Axcell™ | Obsolete | 3 (168 Hours) | 64 | 1.8V | 10mm | ROHS3 Compliant | No | 64 | TOP BOOT | 64-TBGA | Parallel, Serial | 512 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 1 | 31mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | 28F512P30 | YES | 1mm | 1.81.8/3.3V | 1.7V | 512Mb 32M x 16 | Non-Volatile | 25b | 1.7V~2V | 32MX16 | 16 | Asynchronous | 52MHz | 0.000225A | 100 ns | 16b | NO | NO | 4511 | 16words | FLASH | Parallel | 100ns | TOP | ||||||||||||||||||||||||||||||||||||||||||||
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MX29F040CQC-90G | Macronix | 2.6574 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tube | 2009 | MX29F | yes | Not For New Designs | 3 (168 Hours) | 32 | 3A991.B.1.A | 5V | 14.05mm | ROHS3 Compliant | Lead Free | 32 | 32-LCC (J-Lead) | 4 Mb | 11.43mm | Surface Mount | 0°C~70°C TA | FLASH - NOR | ASYNCHRONOUS | 3.55mm | 1 | e3 | Matte Tin (Sn) | QUAD | 260 | 5V | 40 | 32 | YES | 1.27mm | Not Qualified | 5V | 4Mb 512K x 8 | Non-Volatile | 0.05mA | 4.5V~5.5V | 512KX8 | 8 | 0.000005A | 90 ns | 100000 Write/Erase Cycles | 5V | YES | YES | YES | 8 | FLASH | Parallel | 90ns | 64K | ||||||||||||||||||||||||||||||||||||||||||||
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DS2430AX-S/T&R | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 4-UBGA, FCBGA | Surface Mount | -40°C~85°C TA | EEPROM | DS2430A | 4-FlipChip (2.39x1.73) | 15μs | 256b 32 x 8 | Non-Volatile | EEPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT48LC64M4A2BB-6A:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2015 | Obsolete | 3 (168 Hours) | 60 | 1 | 16mm | ROHS3 Compliant | AUTO/SELF REFRESH | 60-TFBGA | 8mm | Surface Mount | 0°C~70°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | 3.3V | MT48LC64M4A2 | YES | 0.8mm | S-PBGA-B60 | 3V | 3.6V | 5.4ns | 256Mb 64M x 4 | Volatile | 3V~3.6V | 64MX4 | 4 | 268435456 bit | 167MHz | DRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71421LA20J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | CMOS | 1 | 200mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 20 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||
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DS1230W-100IND+ | Maxim Integrated | 24.6527 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 2004 | yes | Active | 1 (Unlimited) | 28 | EAR99 | 38.225mm | ROHS3 Compliant | 10 YEAR DATA RETENTION | 28-DIP Module (0.600, 15.24mm) | 15.24mm | Through Hole | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 10.668mm | 8473.30.11.40 | 1 | e3 | MATTE TIN | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | DS1230W | 28 | NO | 2.54mm | R-PDIP-T28 | 3V | SRAMs | Not Qualified | 3.3V | 3.6V | 256Kb 32K x 8 | Non-Volatile | 0.05mA | 3V~3.6V | 256KX8 | 8 | 2097152 bit | 0.00025A | 100 ns | NVSRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||
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7007L20J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | Active | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | PLCC | Parallel | 5.5V | 4.5V | 256 kb | 24mm | 3.63mm | 275mA | 20 ns | 32kB | RAM, SDR, SRAM | 15b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7006S25J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | Active | 70°C | 0°C | 5V | 2 | 24mm | RoHS Compliant | Contains Lead | No | 68 | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 24mm | 3.63mm | 265mA | 25 ns | 16kB | RAM, SDR, SRAM | 28b | Asynchronous | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL128P90FASS00 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | GL-P | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 64 | 64-LBGA | Surface Mount | 0°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 90ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS1350WP-150IND | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2010 | Obsolete | 3 (168 Hours) | 85°C | -40°C | Non-RoHS Compliant | Contains Lead | 34-PowerCap™ Module | Parallel | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | DS1350W | 34-PowerCap Module | 150ns | 4Mb 512K x 8 | Non-Volatile | 3V~3.6V | NVSRAM | Parallel | 150ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS28EC20P+T | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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70V261L25PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70V261 | 256Kb 16K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 25ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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93AA46B-I/ST | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 4.4mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP (0.173, 4.40mm Width) | Serial | 1 kb | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1.2mm | 1 | 2mA | e3 | DUAL | 260 | 2.5V | 40 | 93AA46B | 8 | 0.65mm | 2/5V | 5.5V | 250 ns | 1Kb 64 x 16 | Non-Volatile | 1.8V~5.5V | 64X16 | 16 | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||
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DS1230YP-100+ | Maxim Integrated | 26.5887 |
Min: 1 Mult: 1 |
0.00000000 | download | 9 Weeks | Tube | 2002 | yes | Active | 3 (168 Hours) | 34 | EAR99 | ROHS3 Compliant | Lead Free | 34-PowerCap™ Module | not_compliant | Surface Mount | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8473.30.11.40 | 1 | e3 | MATTE TIN | DUAL | 245 | 5V | 40 | DS1230Y | 34 | YES | R-XDMA-U34 | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 256Kb 32K x 8 | Non-Volatile | 0.085mA | 4.5V~5.5V | 32KX8 | 8 | 262144 bit | 0.0006A | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
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DS1200 | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2004 | Obsolete | 1 (Unlimited) | 10 | EAR99 | 12.7mm | Non-RoHS Compliant | Contains Lead | DATA RETENTION > 10 YEARS | 10-DIP (0.300, 7.62mm) | 2-Wire, I2C, Serial | not_compliant | 7.62mm | Through Hole | 0°C~70°C TA | CMOS | SYNCHRONOUS | 4.58mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1200 | 10 | NO | 2.54mm | R-PDIP-T10 | 4.5V | Not Qualified | 5.5V | 4 μs | 1Kb 1K x 1 | Volatile | 0.006mA | 4.5V~5.5V | 128X8 | 8 | 1024 bit | 4MHz | 0.0025A | SRAM | I2C | |||||||||||||||||||||||||||||||||||||||||||||||||
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DS1270AB-100# | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 2004 | yes | Active | 1 (Unlimited) | 36 | 3A991.B.2.A | ROHS3 Compliant | 5 YEAR DATA RETENTION | 36-DIP Module (0.600, 15.24mm) | not_compliant | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8473.30.11.40 | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1270AB | 36 | NO | R-PDMA-P36 | 4.75V | Not Qualified | 5.25V | 16Mb 2M x 8 | Non-Volatile | 4.75V~5.25V | 2MX8 | 8 | 16777216 bit | 100 ns | NVSRAM | Parallel | 100ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7025L25J8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | Lead, Tin | 84 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | 220mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | NOT SPECIFIED | 84 | COMMERCIAL | SRAMs | Not Qualified | 5V | 3-STATE | 25 ns | 16kB | RAM, SDR, SRAM | 13b | 8KX16 | Asynchronous | 0.0015A | 16b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||
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DS1225AB-150 | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | no | Obsolete | 1 (Unlimited) | 28 | 38.865mm | Non-RoHS Compliant | 10 YEAR DATA RETENTION | 28-DIP Module (0.600, 15.24mm) | 15.24mm | Through Hole | 0°C~70°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 10.54mm | 1 | e0 | TIN LEAD | DUAL | 240 | 5V | NOT SPECIFIED | 28 | NO | 2.54mm | R-PDMA-P28 | 4.75V | COMMERCIAL | 5.25V | 64Kb 8K x 8 | Non-Volatile | 4.75V~5.25V | 8KX8 | 8 | 65536 bit | 150 ns | NVSRAM | Parallel | 150ns |
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IDT71V3556S166BQGI Integrated Device Technology (IDT)
3.3V V 165 Pin Memory IC 15mm mm
Price: 0.0000
RFQ -
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AT25040B-MAPD-E Microchip Technology
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 3mm mm
Price: 0.0000
RFQ -
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PC28F512P30TFA Micron Technology Inc.
1.81.8/3.3V V Axcell™ Memory IC Axcell™ Series 28F512P30 512 Mb kb 10mm mm 31mA mA 16b b
Price: 0.0000
RFQ -
MX29F040CQC-90G Macronix
5V V MX29F 32 Pin Memory IC MX29F Series 4 Mb kb 14.05mm mm
Price: 2.6574
RFQ -
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71421LA20J8 Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 16 kb kb 19mm mm 200mA mA 8b b
Price: 0.0000
RFQ -
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7007L20J8 Integrated Device Technology (IDT)
Surface Mount Memory IC 256 kb kb 24mm mm 275mA mA 8b b
Price: 0.0000
RFQ -
7006S25J Integrated Device Technology (IDT)
Surface Mount Memory IC 128 kb kb 24mm mm 265mA mA 8b b
Price: 0.0000
RFQ -
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DS28EC20P+T Maxim Integrated
Electrically Erasable Programmable Read-Only Memory 20Kb 1-Wire Electrically Erasable Programmable Read-Only Memory
Price: 0.0000
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93AA46B-I/ST Microchip Technology
2/5V V Surface Mount 8 Pin Memory IC 93AA46B 1 kb kb 4.4mm mm 2mA mA
Price: 0.0000
RFQ -
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7025L25J8 Integrated Device Technology (IDT)
5V V Surface Mount 84 Pin Memory IC 128 kb kb 29.21mm mm 220mA mA 16b b
Price: 0.0000
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