Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Data Polling | Toggle Bit | Command User Interface | Number of Sectors/Size | Page Size | Ready/Busy | Common Flash Interface | Serial Bus Type | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sector Size | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
7025S55J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | 250mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | COMMERCIAL | SRAMs | 5V | 3-STATE | 55 ns | 16kB | RAM, SDR, SRAM | 26b | 8KX16 | Asynchronous | 0.015A | 16b | COMMON | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT29F32G08CBACAL73A3WC1PV") |
MT29F32G08CBACAL73A3WC1PV | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Active | 1 (Unlimited) | ROHS3 Compliant | 0°C~70°C TA | FLASH - NAND | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61NLP25672-200B1LI-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 2 (1 Year) | 85°C | -40°C | ROHS3 Compliant | 209 | 209-BGA | Parallel | 3.465V | 3.135V | 200MHz | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | 200MHz | 209-LFBGA (14x22) | 3.1ns | 18Mb 256K x 72 | Volatile | 3.135V~3.465V | 200MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TH58NVG5S0FTA20 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2011 | Active | 48 | 70°C | 0°C | 3.3V | 18.4mm | RoHS Compliant | No | 48 | TFSOP | Parallel, Serial | 3.6V | 2.7V | 32 Gb | 12mm | CMOS | 1.2mm | 1 | DUAL | GULL WING | 3.3V | COMMERCIAL | 0.5mm | EEPROM, NAND | 4GX8 | 8 | 8b | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MX29LV040CT2I-70G | Macronix | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 16 Weeks | Tray | MX29LV | Active | 3 (168 Hours) | 32 | EAR99 | 12.4mm | ROHS3 Compliant | 32 | 32-TFSOP (0.724, 18.40mm Width) | 8mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | 32 | YES | 0.5mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 4Mb 512K x 8 | Non-Volatile | 0.03mA | 2.7V~3.6V | 512KX8 | 8 | 4194304 bit | 0.000005A | 70 ns | 3V | YES | YES | YES | 8 | YES | FLASH | Parallel | 70ns | 64K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V432S8PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | no | 3 (168 Hours) | 100 | 3A991.B.2.B | 70°C | 0°C | 1 | 20mm | Non-RoHS Compliant | LQFP | Parallel | not_compliant | 14mm | CMOS | SYNCHRONOUS | 1.6mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 100 | COMMERCIAL | YES | 0.65mm | R-PQFP-G100 | 3.135V | Not Qualified | 3.63V | 3-STATE | RAM, SRAM | 32KX32 | 32 | 1048576 bit | 8 ns | YES | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
W948D6KBHX5I TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 60-TFBGA | Surface Mount | -40°C~85°C TA | SDRAM - Mobile LPDDR | 5ns | 256Mb 16M x 16 | Volatile | 1.7V~1.95V | 200MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58BVG1S3HTAI0 | Toshiba | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2013 | Active | 85°C | -40°C | 20mm | RoHS Compliant | 48 | TFSOP | Parallel | 3.6V | 2.7V | 12mm | 40 μs | 256MB | EEPROM, NAND | 8b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71T75602S100BGG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 14 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 119-BGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71T75 | 119-PBGA (14x22) | 5ns | 18Mb 512K x 36 | Volatile | 2.375V~2.625V | 100MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
PC28F640P33B85A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2007 | StrataFlash™ | Obsolete | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 64 | 64-TBGA | Parallel, Serial | 3.6V | 2.3V | 64 Mb | Surface Mount | -40°C~85°C TC | FLASH - NOR | 28mA | 28F640P33 | 2.3V | 64-EasyBGA (10x13) | 85ns | 64Mb 4M x 16 | Non-Volatile | 22b | 2.3V~3.6V | Asynchronous | 52MHz | 16b | FLASH | Parallel | 85ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7164L25DB | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Bulk | 2007 | no | Active | 1 (Unlimited) | 28 | 125°C | -55°C | 5V | 1 | 37.2mm | RoHS Compliant | Contains Lead | No | 28 | CDIP | Parallel | 64 kb | 15.24mm | 1.65mm | CMOS | 1 | e0 | Tin/Lead (Sn63Pb37) | DUAL | THROUGH-HOLE | 240 | 5V | 28 | MILITARY | NO | 2.54mm | SRAMs | 5V | 3-STATE | MIL-STD-883 Class B | RAM, SRAM - Asynchronous | 13b | 8KX8 | 0.0002A | 25 ns | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3577S85PFG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | 2005 | yes | Active | 3 (168 Hours) | 100 | 70°C | 0°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | FLOW THROUGH ARCHITECTURE | TQFP | Parallel | 3.465V | 3.135V | 4.5 Mb | 87MHz | 14mm | 1.4mm | CMOS | 1 | 180mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | COMMERCIAL | 0.65mm | SRAMs | 3-STATE | 8.5 ns | 87MHz | 512kB | RAM, SDR, SRAM | 17b | Synchronous | 0.03A | 36b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93AA66CT-I/MC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Surface Mount | Cut Tape (CT) | 2008 | yes | Discontinued | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 5V | 3mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-VFDFN Exposed Pad | Serial | No SVHC | 4 kb | 2.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1mm | 1 | 2mA | e3 | DUAL | 260 | 2.5V | 40 | 93AA66C | 8 | 0.65mm | 200 ns | 4Kb 512 x 8 256 x 16 | Non-Volatile | 1.8V~5.5V | 256X16 | 16 | 3MHz | 0.000001A | 8 | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS61C256AL-12JLI | ISSI, Integrated Silicon Solution Inc | 2.4312 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tube | yes | Active | 3 (168 Hours) | 28 | EAR99 | 5V | 1 | 18.54mm | ROHS3 Compliant | Lead Free | No | 28 | 28-BSOJ (0.300, 7.62mm Width) | No SVHC | 256 kb | 2.67mm | 7.75mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1 | 40mA | 83MHz | e3 | Matte Tin (Sn) | DUAL | 260 | 5V | 40 | 28 | YES | 5V | 3-STATE | 256Kb 32K x 8 | Volatile | 15b | 4.5V~5.5V | 32KX8 | Asynchronous | 8b | COMMON | 2V | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT29TZZZ7D7DKLAH-107 W.9B7 TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
NAND256W3A0BN6E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Bulk | 2012 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 18.4mm | ROHS3 Compliant | No | 48 | 48-TFSOP (0.724, 18.40mm Width) | 256 Mb | Surface Mount | -40°C~85°C TA | 3V | FLASH - NAND | 1.2mm | 8542.32.00.51 | 1 | 20mA | e3 | MATTE TIN | DUAL | 260 | 3V | 30 | 48 | 0.5mm | 3V | 256Mb 32M x 8 | Non-Volatile | 25b | 2.7V~3.6V | 32MX8 | 8 | Asynchronous | 0.00005A | 35 ns | 8b | NO | NO | YES | 2K | 512words | YES | FLASH | Parallel | 50ns | 16K | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT41K512M8RH-125 V:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2016 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 78-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR3L | 13.75ns | 4Gb 512M x 8 | Volatile | 1.283V~1.45V | 800MHz | DRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
25LC080C-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 8 kb | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1.75mm | 1 | 5mA | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 5V | 40 | 25LC080C | 8 | 1.27mm | 100 ns | 8Kb 1K x 8 | Non-Volatile | 2.5V~5.5V | 8 | 10MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE/SOFTWARE | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MT25TL256BBA8ESF-0AAT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tube | Automotive, AEC-Q100 | Active | 3 (168 Hours) | 16 | 10.3mm | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | 7.5mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G16 | 2.7V | 3.6V | 256Mb 32M x 8 | Non-Volatile | 2.7V~3.6V | 32MX8 | 8 | 268435456 bit | SERIAL | 133MHz | 1 | 3V | FLASH | SPI | 8ms, 2.8ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S34ML02G200BHI500 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | 2015 | ML-2 | Discontinued | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 63 | 63-VFBGA | Parallel | Surface Mount | -40°C~85°C TA | FLASH - NAND | 63-BGA (11x9) | 2Gb 256M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7140LA20JG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2009 | yes | Active | 1 (Unlimited) | 52 | EAR99 | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Lead Free | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 8 kb | 19mm | 3.63mm | CMOS | 4.57mm | 1 | 200mA | e3 | Matte Tin (Sn) - annealed | QUAD | J BEND | 260 | 5V | 52 | COMMERCIAL | SRAMs | 5V | 3-STATE | 20 ns | 1kB | RAM, SDR, SRAM | 20b | 1KX8 | Asynchronous | 0.0015A | 8b | COMMON | 2V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CYDMX128A16-65BVXIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | yes | Obsolete | 3 (168 Hours) | 100 | EAR99 | 2 | 6mm | ROHS3 Compliant | Lead Free | 100 | 100-VFBGA | 128 kb | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, MoBL | 1mm | 1 | 70mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | CYDMX | 0.5mm | 1.7V | Not Qualified | 1.8/3V | 1.9V | 3-STATE | 128Kb 8K x 16 | Volatile | 13b | 1.8V~3.3V | 8KX16 | 16 | Asynchronous | 0.000006A | 65 ns | 16b | COMMON | SRAM | Parallel | 65ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C16M16S-6TINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2014 | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | 1 | 22.22mm | RoHS Compliant | Lead Free | 54 | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | e3/e6 | PURE MATTE TIN/TIN BISMUTH | DUAL | 260 | 3.3V | 40 | 54 | YES | 0.8mm | 3V | 3.6V | 5.4ns | 256Mb 16M x 16 | Volatile | 3V~3.6V | 16MX16 | 16 | 16b | 166MHz | DRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S25FL129P0XBHIY13 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | FL-P | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 24 | 24-TBGA | SPI, Serial | Surface Mount | -40°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 5μs, 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT24C256N-10SC-1.8 | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | 0°C~70°C TA | EEPROM | AT24C256 | 8-SOIC | 900ns | 256Kb 32K x 8 | Non-Volatile | 1.8V~3.6V | 400kHz | EEPROM | I2C | 10ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IS25WP032D-RMLE-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 16 | 10.31mm | ROHS3 Compliant | 16-SOIC (0.295, 7.50mm Width) | 7.49mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | SYNCHRONOUS | 2.65mm | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G16 | 1.65V | 1.95V | 8ns | 32Mb 4M x 8 | Non-Volatile | 1.65V~1.95V | 4MX8 | 8 | 33554432 bit | SERIAL | 104MHz | 1.8V | FLASH | SPI - Quad I/O, QPI, DTR | 800μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V3557S85BQI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2009 | 3 (168 Hours) | 165 | 3A991.B.2.A | 85°C | -40°C | 15mm | Non-RoHS Compliant | 165 | FLOW-THROUGH ARCHITECTURE | Parallel | not_compliant | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | INDUSTRIAL | YES | 1mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.235mA | 128KX36 | 36 | 4718592 bit | 90MHz | 0.045A | 8.5 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C16M16D2-25BIN | Alliance Memory, Inc. | 3.5594 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2015 | yes | Active | 3 (168 Hours) | 84 | EAR99 | 1 | 12.5mm | ROHS3 Compliant | AUTO/SELF REFRESH | 84-TFBGA | 8mm | Surface Mount | -40°C~95°C TC | SDRAM - DDR2 | SYNCHRONOUS | 1.2mm | 1 | BOTTOM | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.8mm | R-PBGA-B84 | 1.7V | 1.9V | 400ps | 256Mb 16M x 16 | Volatile | 1.7V~1.9V | 16MX16 | 16 | 268435456 bit | 400MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT6116SA35TPG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 2008 | 24 | EAR99 | 70°C | 0°C | 1 | 31.75mm | RoHS Compliant | DIP | Parallel | 7.62mm | CMOS | 4.191mm | 8542.32.00.41 | 1 | e3 | MATTE TIN | DUAL | THROUGH-HOLE | 260 | 5V | 30 | 24 | COMMERCIAL | NO | 2.54mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 3-STATE | RAM, SRAM - Asynchronous | 0.08mA | 2KX8 | 8 | 16384 bit | 0.002A | 35 ns | YES | COMMON | 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT46V64M8P-6T:F | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | Obsolete | 4 (72 Hours) | 66 | EAR99 | 2.5V | 1 | 22.22mm | ROHS3 Compliant | Lead Free | No | 66 | AUTO/SELF REFRESH | 66-TSSOP (0.400, 10.16mm Width) | 512 Mb | Surface Mount | 0°C~70°C TA | SDRAM - DDR | 1.2mm | 8542.32.00.28 | 1 | 175mA | e3 | Matte Tin (Sn) | DUAL | 260 | 2.5V | 30 | MT46V64M8 | 66 | 0.65mm | 2.3V | 2.7V | 3-STATE | 700ps | 512Mb 64M x 8 | Volatile | 15b | 2.3V~2.7V | 64MX8 | 8 | 8b | 167MHz | 0.005A | COMMON | 8192 | DRAM | Parallel | 15ns | 248 | 248 |
-
7025S55J Integrated Device Technology (IDT)
5V V Surface Mount 84 Pin Memory IC 128 kb kb 29.21mm mm 250mA mA 16b b
Price: 0.0000
RFQ -
-
-
-
MX29LV040CT2I-70G Macronix
3/3.3V V MX29LV 32 Pin Memory IC MX29LV Series 12.4mm mm
Price: 0.0000
RFQ -
-
-
-
-
PC28F640P33B85A Micron Technology Inc.
StrataFlash™ Memory IC StrataFlash™ Series 28F640P33 64 Mb kb 28mA mA 16b b
Price: 0.0000
RFQ -
7164L25DB Integrated Device Technology (IDT)
5V V 28 Pin Memory IC 64 kb kb 37.2mm mm
Price: 0.0000
RFQ -
71V3577S85PFG Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 4.5 Mb kb 20mm mm 180mA mA 36b b
Price: 0.0000
RFQ -
93AA66CT-I/MC Microchip Technology
Surface Mount 8 Pin Memory IC 93AA66C 4 kb kb 3mm mm 2mA mA
Price: 0.0000
RFQ -
IS61C256AL-12JLI ISSI, Integrated Silicon Solution Inc
5V V 28 Pin Memory IC 256 kb kb 18.54mm mm 40mA mA 8b b
Price: 2.4312
RFQ -
-
NAND256W3A0BN6E Micron Technology Inc.
Surface Mount 48 Pin Memory IC 256 Mb kb 18.4mm mm 20mA mA 8b b
Price: 0.0000
RFQ -
-
25LC080C-I/SN Microchip Technology
Surface Mount 8 Pin Memory IC 25LC080C 8 kb kb 4.9mm mm 5mA mA
Price: 0.0000
RFQ -
MT25TL256BBA8ESF-0AAT Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 10.3mm mm
Price: 0.0000
RFQ -
-
7140LA20JG8 Integrated Device Technology (IDT)
5V V Surface Mount 52 Pin Memory IC 8 kb kb 19mm mm 200mA mA 8b b
Price: 0.0000
RFQ -
CYDMX128A16-65BVXIT Cypress Semiconductor Corp
1.8/3V V Surface Mount Memory IC CYDMX 128 kb kb 6mm mm 70mA mA 16b b
Price: 0.0000
RFQ -
-
-
-
-
IDT71V3557S85BQI Integrated Device Technology (IDT)
3.3V V 165 Pin Memory IC 15mm mm
Price: 0.0000
RFQ -
-
IDT6116SA35TPG Integrated Device Technology (IDT)
5V V 24 Pin Memory IC 31.75mm mm
Price: 0.0000
RFQ -
MT46V64M8P-6T:F Micron Technology Inc.
Surface Mount 66 Pin Memory IC MT46V64M8 512 Mb kb 22.22mm mm 175mA mA
Price: 0.0000
RFQ
Need Help?
