Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Max Supply Current | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Page Size | Serial Bus Type | Reverse Pinout | Refresh Cycles | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CY62146GE-45ZSXI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2012 | MoBL® | Active | 3 (168 Hours) | 44 | 3A991.B.2.A | 18.415mm | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.194mm | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 0.8mm | R-PDSO-G44 | 4.5V | 5.5V | 4Mb 256K x 16 | Volatile | 4.5V~5.5V | 256KX16 | 16 | 4194304 bit | 45 ns | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1548KV18-450BZI | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2003 | no | Obsolete | 3 (168 Hours) | 165 | 1.8V | 1 | Non-RoHS Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 72 Mb | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, DDR II+ | 1 | 650mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | 220 | 1.8V | CY7C1548 | 165 | 3-STATE | 450 ps | 72Mb 4M x 18 | Volatile | 21b | 1.7V~1.9V | 18 | Synchronous | 450MHz | 0.34A | 18b | COMMON | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29W640GT70ZA6EP | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2013 | Obsolete | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | No | 48 | 48-TFBGA | Parallel | 64 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | M29W640 | 2.7V | 48-TFBGA (6x8) | 70ns | 64Mb 8M x 8 4M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "S29GL512T11FHIV23") |
S29GL512T11FHIV23 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Tape & Reel (TR) | GL-T | Active | 3 (168 Hours) | 64 | 13mm | ROHS3 Compliant | 64-LBGA | 11mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | 30 | YES | 1mm | R-PBGA-B64 | 2.7V | 3.6V | 110ns | 512Mb 64M x 8 | Non-Volatile | 2.7V~3.6V | 32MX16 | 16 | 536870912 bit | 8 | 2.7V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T016SA15PH8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | 3 (168 Hours) | 44 | 3A991.B.2.B | 70°C | 0°C | 18.41mm | Non-RoHS Compliant | TSOP | Parallel | not_compliant | 10.16mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | GULL WING | 225 | 2.5V | 20 | 44 | COMMERCIAL | YES | 0.8mm | R-PDSO-G44 | 2.375V | SRAMs | Not Qualified | 2.5V | 2.625V | 3-STATE | RAM, SRAM - Asynchronous | 0.13mA | 64KX16 | 16 | 1048576 bit | 0.015A | 15 ns | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S29GL128S10WEI019 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 13 Weeks | Bulk | GL-S | Active | 3 (168 Hours) | ROHS3 Compliant | 725 | -40°C~85°C TA | FLASH - NOR | 100ns | 128Mb 8M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70121S25J8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 52-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70121 | 52-PLCC (19.13x19.13) | 25ns | 18Kb 2K x 9 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V124SA10TY | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | 70°C | 0°C | 20.955mm | Non-RoHS Compliant | 32 | Parallel | not_compliant | 7.62mm | CMOS | 3.7592mm | 1 | e0 | Tin/Lead (Sn85Pb15) | DUAL | J BEND | 225 | 3.3V | 30 | 32 | COMMERCIAL | YES | 1.27mm | 3.15V | SRAMs | Not Qualified | 3.3V | 3.6V | 3-STATE | RAM, SRAM - Asynchronous | 0.145mA | 128KX8 | 8 | 1048576 bit | 0.01A | 10 ns | COMMON | 3.15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS7C3256A-10JCNTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2001 | yes | Active | 3 (168 Hours) | 28 | 3.3V | 18.415mm | ROHS3 Compliant | Lead Free | 28 | 28-BSOJ (0.300, 7.62mm Width) | 256 kb | 7.62mm | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | 3.7592mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 28 | YES | 1.27mm | 3V | 3.6V | 256Kb 32K x 8 | Volatile | 3V~3.6V | 32KX8 | 8 | 10 ns | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7142LA25J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2007 | Active | 70°C | 0°C | 5V | 2 | 19mm | RoHS Compliant | Contains Lead | No | 52 | PLCC | Parallel | 5.5V | 4.5V | 16 kb | 19mm | 3.63mm | 170mA | 25 ns | 2kB | RAM, SDR, SRAM | 22b | Asynchronous | 8b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V416VS15BEGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | 4 (72 Hours) | 48 | 3A991.B.2.A | 85°C | -40°C | 9mm | RoHS Compliant | TFBGA | Parallel | 9mm | CMOS | 1.2mm | 8542.32.00.41 | 1 | e1 | TIN SILVER COPPER | BOTTOM | BALL | 260 | 3.3V | 30 | 48 | INDUSTRIAL | YES | 0.75mm | S-PBGA-B48 | 3V | Not Qualified | 3.6V | RAM, SRAM - Asynchronous | 256KX16 | 16 | 4194304 bit | 15 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
DS28E07Q+U | Maxim Integrated | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Strip | 2017 | Active | 1 (Unlimited) | ROHS3 Compliant | 6-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | DS28E07 | 2μs | 1Kb 256 x 4 | Non-Volatile | 3V~5.25V | EEPROM | 1-Wire® | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SM662PXD-BDST | Silicon Motion, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
CY7C1562XV18-366BZC | Rochester Electronics, LLC | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 165-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, QDR II+ | 165-FBGA (13x15) | 72Mb 4M x 18 | Volatile | 1.7V~1.9V | 366MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T3319S133BFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2010 | no | Active | 3 (168 Hours) | 208 | 85°C | -40°C | 2.5V | 2 | 15mm | RoHS Compliant | Contains Lead | No | 208 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 2.6V | 2.4V | 4 Mb | 133MHz | 15mm | 1.4mm | CMOS | 1 | 450mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 208 | INDUSTRIAL | 0.8mm | SRAMs | 3-STATE | 15 ns | RAM, SRAM | 36b | Synchronous | 18b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
6116SA20SOG8 | Renesas Electronics America Inc. | 2.2211 |
Min: 1 Mult: 1 |
0.00000000 | download | 15 Weeks | Tape & Reel (TR) | Active | 1 (Unlimited) | ROHS3 Compliant | 24-SOIC (0.295, 7.50mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT6116 | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48LC4M16A2P-7E IT:J | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Bulk | 2015 | yes | Obsolete | 3 (168 Hours) | 54 | EAR99 | 1 | 22.22mm | ROHS3 Compliant | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 8542.32.00.02 | 1 | e3 | Matte Tin (Sn) | DUAL | 260 | 3.3V | 30 | MT48LC4M16A2 | 54 | YES | 0.8mm | R-PDSO-G54 | 3V | Not Qualified | 3.3V | 3.6V | 3-STATE | 5.4ns | 64Mb 4M x 16 | Volatile | 0.15mA | 3V~3.6V | 4MX16 | 16 | 67108864 bit | 133MHz | 0.0025A | COMMON | 4096 | DRAM | Parallel | 14ns | 1248FP | 1248 | |||||||||||||||||||||||||||||||||||||||||||
 |
71T75802S133BGG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | 2012 | yes | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 2.5V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 133MHz | 2.15mm | 22mm | 2.15mm | CMOS | 195mA | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 2.5V | 30 | 119 | COMMERCIAL | YES | SRAMs | 3-STATE | 4.2 ns | 133MHz | 2.3MB | RAM, SDR, SRAM | 20b | 0.04A | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||||||||||
|
CH376-80032 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST26VF016B-104I/MF | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 2006 | SST26 SQI® | Active | 3 (168 Hours) | 8 | 3A991.B.1.A | 6mm | ROHS3 Compliant | 8 | 8-WDFN Exposed Pad | SPI, Serial | 16 Mb | 800μm | 5mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | SST26VF016B | 1.27mm | 2.7V | Not Qualified | 3/3.3V | 3.6V | 16Mb 2M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 16MX1 | 104MHz | 0.000025A | 100 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | 256B | SPI | NO | FLASH | SPI - Quad I/O | 1.5ms | BOTTOM/TOP | |||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71T75902S85BGGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2005 | 85°C | -40°C | RoHS Compliant | BGA | Parallel | RAM, SRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70V05S55PF | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2009 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 3.3V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | TQFP | Parallel | 3.6V | 3V | 64 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 3.3V | 20 | 64 | COMMERCIAL | YES | 0.8mm | SRAMs | 3-STATE | 55 ns | 8kB | RAM, SDR, SRAM | 26b | 0.18mA | 8KX8 | 0.005A | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
7027S20PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | Active | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 100 | TQFP | Parallel | 5.5V | 4.5V | 512 kb | 14mm | 1.4mm | 325mA | 20 ns | 64kB | RAM, SDR, SRAM | 30b | Asynchronous | 16b | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT25160N-10SI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 2001 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | EEPROM | AT25160 | 8-SOIC | 16Kb 2K x 8 | Non-Volatile | 4.5V~5.5V | 3MHz | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
MTFC256GAOAMAM-WT ES | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | e•MMC™ | Obsolete | 1 (Unlimited) | -25°C~85°C TA | FLASH - NAND | 2Tb 256G x 8 | Non-Volatile | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49LV002N-12VC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-TFSOP (0.488, 12.40mm Width) | Surface Mount | 0°C~70°C TC | AT49LV002 | 120ns | 2Mb 256K x 8 | Non-Volatile | 3V~3.6V | FLASH | Parallel | 50μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7016S35PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 80-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 144Kb 16K x 9 | Volatile | 4.5V~5.5V | SRAM | Parallel | 35ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
S34ML02G200TFV000 | SkyHigh Memory Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
7025S55J | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2009 | no | Active | 1 (Unlimited) | 84 | EAR99 | 70°C | 0°C | 5V | 2 | 29.21mm | RoHS Compliant | Contains Lead | No | 84 | PLCC | Parallel | 5.5V | 4.5V | 128 kb | 29.21mm | 3.63mm | CMOS | 4.57mm | 1 | 250mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | J BEND | 225 | 5V | 84 | COMMERCIAL | SRAMs | 5V | 3-STATE | 55 ns | 16kB | RAM, SDR, SRAM | 26b | 8KX16 | Asynchronous | 0.015A | 16b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC66B-I/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 2008 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Serial | No SVHC | 4 kb | 950μm | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 2mA | e3 | DUAL | 260 | 3V | 40 | 93LC66B | 8 | 0.65mm | 2.5V | 3/5V | 5.5V | 250 ns | 4Kb 256 x 16 | Non-Volatile | 2.5V~5.5V | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms |
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CY62146GE-45ZSXI Cypress Semiconductor Corp
MoBL® Memory IC MoBL® Series 18.415mm mm
Price: 0.0000
RFQ -
CY7C1548KV18-450BZI Cypress Semiconductor Corp
Surface Mount 165 Pin Memory IC CY7C1548 72 Mb kb 650mA mA 18b b
Price: 0.0000
RFQ -
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IDT71T016SA15PH8 Integrated Device Technology (IDT)
2.5V V 44 Pin Memory IC 18.41mm mm
Price: 0.0000
RFQ -
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IDT71V124SA10TY Integrated Device Technology (IDT)
3.3V V 32 Pin Memory IC 20.955mm mm
Price: 0.0000
RFQ -
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7142LA25J Integrated Device Technology (IDT)
Surface Mount Memory IC 16 kb kb 19mm mm 170mA mA 8b b
Price: 0.0000
RFQ -
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70T3319S133BFI Integrated Device Technology (IDT)
Surface Mount 208 Pin Memory IC 4 Mb kb 15mm mm 450mA mA 18b b
Price: 0.0000
RFQ -
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MT48LC4M16A2P-7E IT:J Micron Technology Inc.
3.3V V 54 Pin Memory IC MT48LC4M16A2 22.22mm mm
Price: 0.0000
RFQ -
71T75802S133BGG Integrated Device Technology (IDT)
119 Pin Memory IC 18 Mb kb 14mm mm
Price: 0.0000
RFQ -
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SST26VF016B-104I/MF Microchip Technology
3/3.3V V Surface Mount SST26 SQI® Memory IC SST26 SQI® Series SST26VF016B 16 Mb kb 6mm mm
Price: 0.0000
RFQ -
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7027S20PF8 Integrated Device Technology (IDT)
Surface Mount Memory IC 512 kb kb 14mm mm 325mA mA 16b b
Price: 0.0000
RFQ -
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7025S55J Integrated Device Technology (IDT)
5V V Surface Mount 84 Pin Memory IC 128 kb kb 29.21mm mm 250mA mA 16b b
Price: 0.0000
RFQ -
93LC66B-I/MS Microchip Technology
3/5V V Surface Mount 8 Pin Memory IC 93LC66B 4 kb kb 3mm mm 2mA mA
Price: 0.0000
RFQ
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