Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | REACH SVHC | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Ambient Temperature Range High | Supplier Device Package | Output Characteristics | Access Time | Frequency (Max) | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Serial Bus Type | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CY7C1268XV18-633BZXC | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tray | 2003 | Active | 3 (168 Hours) | 165 | 1.8V | 1 | ROHS3 Compliant | No | 165 | PIPELINED ARCHITECTURE | 165-LBGA | 36 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, DDR II+ | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 1.8V | 30 | CY7C1268 | 165 | YES | 3-STATE | 50 ns | 36Mb 2M x 18 | Volatile | 20b | 0.965mA | 1.7V~1.9V | 18 | 633MHz | 0.965A | COMMON | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT25QU256ABA8E12-0AUT TR") |
MT25QU256ABA8E12-0AUT TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tape & Reel (TR) | Automotive, AEC-Q100 | Active | 3 (168 Hours) | ROHS3 Compliant | 24-TBGA | Surface Mount | -40°C~125°C TA | FLASH - NOR | 256Mb 32M x 8 | Non-Volatile | 1.7V~2V | 166MHz | FLASH | SPI | 1.8ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS6C8016-55ZINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | 2008 | Active | 3 (168 Hours) | 85°C | -40°C | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | Parallel | 5.5V | 2.7V | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 44-TSOP II | 55ns | 8Mb 512K x 16 | Volatile | 2.7V~5.5V | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DS1220AD-200IND+ | Maxim Integrated | 15.0790 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 2004 | yes | Active | 1 (Unlimited) | 24 | EAR99 | ROHS3 Compliant | Lead Free | 24 | 24-DIP Module (0.600, 15.24mm) | not_compliant | Through Hole | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 8473.30.11.40 | 1 | e3 | Matte Tin (Sn) | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | DS1220A | 24 | NO | 2.54mm | 4.5V | SRAMs | Not Qualified | 5V | 5.5V | 16Kb 2K x 8 | Non-Volatile | 0.085mA | 4.5V~5.5V | 2KX8 | 8 | 16384 bit | 0.01A | 200 ns | NVSRAM | Parallel | 200ns | |||||||||||||||||||||||||||||||||||||||||||||
 |
FM25040B-GATR | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q100, F-RAM™ | Obsolete | 3 (168 Hours) | 8 | EAR99 | 5V | 4.9mm | ROHS3 Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 4 kb | Surface Mount | -40°C~125°C TA | FRAM (Ferroelectric RAM) | SYNCHRONOUS | 1.75mm | 1 | 3mA | e3 | Tin (Sn) | DUAL | 260 | 5V | 30 | FM25040 | 8 | 1.27mm | SRAMs | Not Qualified | 5V | 30 ns | 4Kb 512 x 8 | Non-Volatile | 4.5V~5.5V | 8 | 8b | 14MHz | 0.00003A | 8b | FRAM | SPI | |||||||||||||||||||||||||||||||||||||||||||||
 |
CY14B116L-Z45XIT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 3 (168 Hours) | 48 | 3A991.B.2.B | 3V | 18.4mm | ROHS3 Compliant | Gold | 48 | 48-TFSOP (0.724, 18.40mm Width) | 12mm | Surface Mount | -40°C~85°C TA | NVSRAM (Non-Volatile SRAM) | ASYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | 0.5mm | 2.7V | 3.6V | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 2MX8 | 8 | 16777216 bit | 45 ns | NVSRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT28HC256F-12TI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1997 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 28-TSSOP (0.465, 11.80mm Width) | Surface Mount | -40°C~85°C TC | EEPROM | AT28HC256 | 28-TSOP | 120ns | 256Kb 32K x 8 | Non-Volatile | 4.5V~5.5V | EEPROM | Parallel | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT48LC2M32B2P-6 IT:G TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2007 | Obsolete | 2 (1 Year) | ROHS3 Compliant | 86-TFSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SDRAM | MT48LC2M32B2 | 86-TSOP II | 5.5ns | 64Mb 2M x 32 | Volatile | 3V~3.6V | 167MHz | DRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SST26VF016BAT-104I/UB | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | SST26 SQI® | Obsolete | 1 (Unlimited) | 85°C | -40°C | ROHS3 Compliant | SPI | 104MHz | Surface Mount | -40°C~85°C TA | FLASH | SST26VF016B | 8-USON (4x3) | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 1.5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7005L20PF8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Tape & Reel | 2005 | no | Active | 3 (168 Hours) | 64 | EAR99 | 70°C | 0°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | TQFP | Parallel | 5.5V | 4.5V | 64 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | COMMERCIAL | YES | 0.8mm | SRAMs | 5V | 3-STATE | 20 ns | 8kB | RAM, SDR, SRAM | 26b | 8KX8 | 0.0015A | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||
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71321LA45JI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 52-LCC (J-Lead) | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 45ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24AA08H-I/S16K | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -40°C~85°C TA | EEPROM | 24AA08H | Die | 900ns | 8Kb 256 x 8 x 4 | Non-Volatile | 1.7V~5.5V | 400kHz | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT40A1G8WE-075E:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | 2017 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 78-TFBGA | Surface Mount | 0°C~95°C TC | SDRAM - DDR4 | 8Gb 1G x 8 | Volatile | 1.14V~1.26V | 1.33GHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
CY7C1360C-200BGCT | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | no | Active | 3 (168 Hours) | 119 | 3A991.B.2.A | 3.3V | 4 | Non-RoHS Compliant | Contains Lead | No | 119 | 119-BGA | 9 Mb | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | 220mA | BOTTOM | CY7C1360 | 1.27mm | 3-STATE | 3ns | 9Mb 256K x 36 | Volatile | 18b | 3.135V~3.6V | 256KX36 | 36 | Synchronous | 200MHz | 36b | COMMON | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V3556SA150BG | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | 2013 | no | Active | 3 (168 Hours) | 70°C | 0°C | 3.3V | 1 | 14mm | RoHS Compliant | Contains Lead | No | 119 | BGA | Parallel | 3.465V | 3.135V | 4.5 Mb | 150MHz | 22mm | 2.15mm | e0 | Tin/Lead (Sn63Pb37) | 225 | 119 | 150MHz | 512kB | RAM, SDR, SRAM | 17b | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR24G16QUZ-3TR | ROHM Semiconductor | 0.3777 |
Min: 1 Mult: 1 |
0.00000000 | 17 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | 8-XFDFN | 1.85mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.4mm | 8542.32.00.51 | 1 | e3 | Tin (Sn) | DUAL | NOT SPECIFIED | NOT SPECIFIED | YES | 0.5mm | R-PDSO-N8 | 1.6V | 5.5V | 16Kb 2K x 8 | Non-Volatile | 1.6V~5.5V | 2KX8 | 8 | 16384 bit | SERIAL | 400kHz | 5ms | I2C | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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S29GL064N90TFI040H | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Bulk | Obsolete | Vendor Undefined | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53E128M16D1DS-046 WT:A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V3556S133BQ | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 2007 | 3 (168 Hours) | 165 | 3A991.B.2.A | 70°C | 0°C | 15mm | Non-RoHS Compliant | 165 | Parallel | not_compliant | 133MHz | 13mm | CMOS | SYNCHRONOUS | 1.2mm | 8542.32.00.41 | 1 | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 3.3V | 20 | 165 | COMMERCIAL | YES | 1mm | 3.135V | SRAMs | Not Qualified | 3.3V | 3.465V | 3-STATE | RAM, SRAM | 0.3mA | 128KX36 | 36 | 4718592 bit | 0.04A | 4.2 ns | COMMON | 3.14V | |||||||||||||||||||||||||||||||||||||||||||||||
 |
IS62WV12816EBLL-45BLI | ISSI, Integrated Silicon Solution Inc | 2.3156 |
Min: 1 Mult: 1 |
0.00000000 | 8 Weeks | Tray | Active | 3 (168 Hours) | 48 | 8mm | ROHS3 Compliant | 48-TFBGA | 6mm | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | 1.2mm | 8542.32.00.41 | 1 | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 0.75mm | R-PBGA-B48 | 2.2V | 3.6V | 2Mb 128K x 16 | Volatile | 2.2V~3.6V | 128KX16 | 16 | 2097152 bit | 45 ns | SRAM | Parallel | 45ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC56B-I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Surface Mount | Tube | 2003 | yes | Active | 1 (Unlimited) | 8 | 2.5V | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Serial | No SVHC | 2 kb | 1.75mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 2mA | e3 | DUAL | 260 | 5V | 40 | 93LC56B | 8 | 1.27mm | 3/5V | 5.5V | 125°C | 3-STATE | 250 ns | 2Kb 128 x 16 | Non-Volatile | 2.5V~5.5V | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | 6ms | MICROWIRE | EEPROM | SPI | 6ms | |||||||||||||||||||||||||||||||||||||||
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IS64WV6416BLL-15BA3 | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | no | Last Time Buy | 3 (168 Hours) | 48 | 3.3V | 1 | 8mm | Non-RoHS Compliant | 48 | 48-TFBGA | 1 Mb | Surface Mount | -40°C~125°C TA | SRAM - Asynchronous | 1 | 50mA | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 3V | NOT SPECIFIED | 48 | YES | 0.75mm | 2.5V | Not Qualified | 3.6V | 3-STATE | 1Mb 64K x 16 | Volatile | 16b | 2.5V~3.6V | 16 | Asynchronous | 0.075A | 16b | COMMON | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H32M16CC-37E L:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2008 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 84-TFBGA | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | MT47H32M16 | 84-FBGA (12x12.5) | 500ps | 512Mb 32M x 16 | Volatile | 1.7V~1.9V | 267MHz | DRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7006L20G | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 1 (Unlimited) | Non-RoHS Compliant | 68-BPGA | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7006 | 128Kb 16K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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25AA080A-I/S15K | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 1 (Unlimited) | ROHS3 Compliant | Die | Surface Mount | -40°C~85°C TA | EEPROM | 25AA080A | Die | 8Kb 1K x 8 | Non-Volatile | 1.8V~5.5V | 10MHz | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AT45DB081B-CNI | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 1998 | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 8-VDFN | Surface Mount | -40°C~85°C TC | FLASH | AT45DB081 | 8-CASON (6x8) | 8Mb 264Bytes x 4096 pages | Non-Volatile | 2.7V~3.6V | 20MHz | FLASH | SPI | 14ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
S29GL128S10DHB020 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | 2015 | Automotive, AEC-Q100, GL-S | yes | Active | 3 (168 Hours) | 64 | 9mm | ROHS3 Compliant | 64 | 64-LBGA | 9mm | Surface Mount | -40°C~105°C TA | FLASH - NOR | ASYNCHRONOUS | 1.4mm | 8542.32.00.51 | 1 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3V | NOT SPECIFIED | YES | 1mm | 2.7V | 3.6V | 100ns | 128Mb 8M x 16 | Non-Volatile | 2.7V~3.6V | 16MX8 | 8 | 134217728 bit | 3V | FLASH | Parallel | 60ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
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71T75602S166BGG8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | 2012 | yes | Active | 3 (168 Hours) | 119 | 70°C | 0°C | 2.5V | 1 | 14mm | RoHS Compliant | Lead Free | No | 119 | PIPELINED ARCHITECTURE | BGA | Parallel | 2.625V | 2.375V | 18 Mb | 166MHz | 22mm | 2.15mm | CMOS | 2.36mm | 1 | 245mA | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 2.5V | 30 | 119 | COMMERCIAL | SRAMs | 3-STATE | 3.5 ns | 166MHz | 2.3MB | RAM, SDR, SRAM | 19b | Synchronous | 0.04A | 36b | COMMON | 2.38V | |||||||||||||||||||||||||||||||||||||||||
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MTFC8GLWDQ-3M AIT A | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 7 Weeks | Bulk | e•MMC™ | Active | 3 (168 Hours) | ROHS3 Compliant | 100-LBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 64Gb 8G x 8 | Non-Volatile | 2.7V~3.6V | 2.7V | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AS4C32M16SC-7TINTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | 54 | 1 | 22.22mm | ROHS3 Compliant | AUTO/SELF REFRESH | 54-TSOP (0.400, 10.16mm Width) | 10.16mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1.2mm | 1 | DUAL | 3.3V | YES | 0.8mm | R-PDSO-G54 | 3V | 3.6V | 17ns | 512Mb 32M x 16 | Volatile | 3V~3.6V | 32MX16 | 16 | 536870912 bit | 133MHz | DRAM | Parallel | 15ns |
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CY7C1268XV18-633BZXC Cypress Semiconductor Corp
165 Pin Memory IC CY7C1268 36 Mb kb
Price: 0.0000
RFQ -
MT25QU256ABA8E12-0AUT TR Micron Technology Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
Price: 0.0000
RFQ -
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FM25040B-GATR Cypress Semiconductor Corp
5V V Surface Mount Automotive, AEC-Q100, F-RAM™ 8 Pin Memory IC Automotive, AEC-Q100, F-RAM™ Series FM25040 4 kb kb 4.9mm mm 3mA mA 8b b
Price: 0.0000
RFQ -
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SST26VF016BAT-104I/UB Microchip Technology
SST26 SQI® Memory IC SST26 SQI® Series SST26VF016B
Price: 0.0000
RFQ -
7005L20PF8 Integrated Device Technology (IDT)
5V V 64 Pin Memory IC 64 kb kb 14mm mm
Price: 0.0000
RFQ -
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CY7C1360C-200BGCT Cypress Semiconductor Corp
Surface Mount Memory IC CY7C1360 9 Mb kb 220mA mA 36b b
Price: 0.0000
RFQ -
71V3556SA150BG Integrated Device Technology (IDT)
119 Pin Memory IC 4.5 Mb kb 14mm mm
Price: 0.0000
RFQ -
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IDT71V3556S133BQ Integrated Device Technology (IDT)
3.3V V 165 Pin Memory IC 15mm mm
Price: 0.0000
RFQ -
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93LC56B-I/SN Microchip Technology
3/5V V Surface Mount 8 Pin Memory IC 93LC56B 2 kb kb 4.9mm mm 2mA mA
Price: 0.0000
RFQ -
IS64WV6416BLL-15BA3 ISSI, Integrated Silicon Solution Inc
48 Pin Memory IC 1 Mb kb 8mm mm 50mA mA 16b b
Price: 0.0000
RFQ -
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S29GL128S10DHB020 Cypress Semiconductor Corp
Automotive, AEC-Q100, GL-S Memory IC Automotive, AEC-Q100, GL-S Series 9mm mm
Price: 0.0000
RFQ -
71T75602S166BGG8 Integrated Device Technology (IDT)
Surface Mount 119 Pin Memory IC 18 Mb kb 14mm mm 245mA mA 36b b
Price: 0.0000
RFQ -
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