Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Reach Compliance Code | Min Supply Voltage | Density | Frequency | Height | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Supplier Device Package | Output Characteristics | Access Time | Screening Level | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Alternate Memory Width | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Page Size | Serial Bus Type | I2C Control Byte | Refresh Cycles | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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70V657S12BFI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 208-LFBGA | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT70V657 | 208-CABGA (15x15) | 12ns | 1.125Mb 32K x 36 | Volatile | 3.15V~3.45V | SRAM | Parallel | 12ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MT53B4DANJ-DC") |
MT53B4DANJ-DC | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | Obsolete | 3 (168 Hours) | ROHS3 Compliant | FBGA | SDRAM - Mobile LPDDR4 | Volatile | DRAM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F512G08CLCCBG1-6R:C | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | 3.3V | ROHS3 Compliant | FBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 272-VBGA (14x18) | 512Gb 64G x 8 | Non-Volatile | 2.7V~3.6V | 166MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
SST26WF016BA-104I/SN | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tube | 2014 | SST26 SQI® | Active | 1 (Unlimited) | 8 | 1.8V | 4.9mm | ROHS3 Compliant | 8 | 8-SOIC (0.154, 3.90mm Width) | SPI, Serial | 16 Mb | 1.25mm | 3.9mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1 | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | 1.8V | 40 | SST26WF016 | 1.27mm | 1.65V | 1.95V | 3 ns | TS 16949 | 16Mb 2M x 8 | Non-Volatile | 1.65V~1.95V | 16MX1 | 104MHz | 256B | FLASH | SPI - Quad I/O | 1.5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TC58NYG1S3HBAI6 | Kioxia America, Inc. | 2.4765 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 3 (168 Hours) | 67 | 8mm | RoHS Compliant | 67-VFBGA | 6.5mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | ASYNCHRONOUS | 1mm | 1 | BOTTOM | 1.8V | YES | 0.8mm | R-PBGA-B67 | 1.7V | 1.95V | 2Gb 256M x 8 | Non-Volatile | 1.7V~1.95V | 256MX8 | 8 | 2147483648 bit | 1.8V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MTFC64GAJAECE-5M AIT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | e•MMC™ | Obsolete | 1 (Unlimited) | 169-LFBGA | Surface Mount | -40°C~85°C TA | FLASH - NAND | 512Gb 64G x 8 | Non-Volatile | FLASH | MMC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
W25Q128JVBIQ TR | Winbond Electronics | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Tape & Reel (TR) | 2016 | SpiFlash® | Active | 3 (168 Hours) | ROHS3 Compliant | 24-TBGA | Surface Mount | -40°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 133MHz | FLASH | SPI - Quad I/O, QPI, DTR | 3ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT49H8M36BM-25:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2015 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 144-TFBGA | Surface Mount | 0°C~95°C TC | DRAM | MT49H8M36 | 144-μBGA (18.5x11) | 20ns | 288Mb 8M x 36 | Volatile | 1.7V~1.9V | 400MHz | DRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
TH58NYG3S0HBAI4 | Kioxia America, Inc. | 6.9658 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Active | 3 (168 Hours) | 63 | 11mm | RoHS Compliant | 63-VFBGA | 9mm | Surface Mount | -40°C~85°C TA | FLASH - NAND (SLC) | ASYNCHRONOUS | 1mm | 1 | BOTTOM | 1.8V | YES | 0.8mm | R-PBGA-B63 | 1.7V | 1.95V | 8Gb 1G x 8 | Non-Volatile | 1.7V~1.95V | 1GX8 | 8 | 8589934592 bit | 3V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S99-50256 | Cypress Semiconductor Corp | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TH58BVG2S3HTA00 | Kioxia America, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Benand™ | Active | 3 (168 Hours) | RoHS Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND (SLC) | 48-TSOP I | 25ns | 4Gb 512M x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V67703S80BQGI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 165-TBGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR | IDT71V67703 | 165-CABGA (13x15) | 8ns | 9Mb 256K x 36 | Volatile | 3.135V~3.465V | 100MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M25P40-VMP6TG TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2010 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 8-VDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | M25P40 | 8-VDFPN (6x5) (MLP8) | 4Mb 512K x 8 | Non-Volatile | 2.3V~3.6V | 50MHz | FLASH | SPI | 15ms, 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V632S8PF | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V632 | 8ns | 2Mb 64K x 32 | Volatile | 3.135V~3.63V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V547S100PFG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V547 | 10ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
24AA014-I/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tube | 2008 | yes | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | I2C, Serial | 1 kb | 950μm | 3mm | Surface Mount | -40°C~85°C TA | CMOS | 1 | 3mA | e3 | DUAL | 260 | 2.5V | 40 | 24AA014 | 8 | 0.65mm | 2/5V | 5.5V | 900ns | 1Kb 128 x 8 | Non-Volatile | 1.7V~5.5V | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||
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FT93C66A-ITR-B | Fremont Micro Devices Ltd | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tube | 2010 | Discontinued | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | Serial | unknown | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 0.65mm | R-PDSO-G8 | 1.8V | 5.5V | 4Kb 512 x 8 256 x 16 | Non-Volatile | 1.8V~5.5V | 256X16 | 16 | 4096 bit | 2MHz | 8 | 10ms | 3-WIRE | EEPROM | SPI | 10ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT29F1G08ABBEAMD-IT:E TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 12 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | -40°C~85°C TA | FLASH - NAND | 1Gb 128M x 8 | Non-Volatile | 1.7V~1.95V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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24VL014/MS | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 12 Weeks | Surface Mount | Tube | 2009 | yes | Active | 1 (Unlimited) | 8 | EAR99 | 3.3V | 3mm | ROHS3 Compliant | Tin | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | I2C, Serial | 1 kb | 3mm | Surface Mount | -20°C~85°C TA | CMOS | SYNCHRONOUS | 1.1mm | 1 | 3mA | e3 | DUAL | 260 | 1.8V | 40 | 24VL014 | 8 | 0.95mm | 1.5V | Not Qualified | 3.6V | 900ns | 1Kb 128 x 8 | Non-Volatile | 1.5V~3.6V | 8 | 400kHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | HARDWARE | 5ms | I2C | 1010DDDR | EEPROM | I2C | 5ms | |||||||||||||||||||||||||||||||||||||||||||
 |
MT48LC16M16A2B4-6A IT:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Bulk | 2014 | yes | Active | 3 (168 Hours) | 54 | 1 | 8mm | ROHS3 Compliant | AUTO/SELF REFRESH | 54-VFBGA | 8mm | Surface Mount | -40°C~85°C TA | SDRAM | SYNCHRONOUS | 1mm | 1 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BOTTOM | 260 | 3.3V | 30 | MT48LC16M16A2 | YES | 0.8mm | S-PBGA-B54 | 3V | Not Qualified | 3.3V | 3.6V | 3-STATE | 5.4ns | 256Mb 16M x 16 | Volatile | 0.15mA | 3V~3.6V | 16MX16 | 16 | 268435456 bit | 167MHz | 0.0025A | COMMON | 8192 | DRAM | Parallel | 12ns | 1248FP | 1248 | ||||||||||||||||||||||||||||||||||||||||||||
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BR93G66FVT-3AGE2 | ROHM Semiconductor | 0.5052 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Cut Tape (CT) | Active | 1 (Unlimited) | 8 | 4.4mm | ROHS3 Compliant | ALSO AVAILABLE 1.7V-2.5V OPERATES WITH 1MHZ, 2.5V-4.5V OPERATES WITH 2MHZ | 8-TSSOP (0.173, 4.40mm Width) | 3mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 1.2mm | 1 | DUAL | NOT SPECIFIED | 5V | NOT SPECIFIED | YES | 0.65mm | R-PDSO-G8 | 4.5V | 5.5V | 4Kb 256 x 16 | Non-Volatile | 1.7V~5.5V | 256X16 | 16 | 4096 bit | SERIAL | 3MHz | 5ms | 3-WIRE | EEPROM | SPI | 5ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MR2A16AMA35 | Everspin Technologies Inc. | 8.3061 |
Min: 1 Mult: 1 |
0.00000000 | download | 10 Weeks | Surface Mount | Tray | 2012 | Active | 3 (168 Hours) | 48 | EAR99 | 3.3V | 8mm | ROHS3 Compliant | Lead Free | 48 | 48-LFBGA | 4 Mb | Surface Mount | 0°C~70°C TA | MRAM (Magnetoresistive RAM) | 105mA | ASYNCHRONOUS | 1.35mm | 8542.32.00.71 | 1 | 155mA | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 48 | 0.75mm | 3V | Not Qualified | 3.6V | 4Mb 256K x 16 | Non-Volatile | 3V~3.6V | 256KX16 | 16 | 16b | 0.028A | 35 ns | 16b | RAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V124SA15Y | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 32-BSOJ (0.400, 10.16mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71V124 | 32-SOJ | 15ns | 1Mb 128K x 8 | Volatile | 3V~3.6V | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V632S5PFGI8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2015 | yes | Active | 3 (168 Hours) | 100 | 85°C | -40°C | 3.3V | 1 | 20mm | RoHS Compliant | Lead Free | No | 100 | ALSO REQUIRES 3.3V I/O SUPPLY | TQFP | Parallel | 3.63V | 3.135V | 2 Mb | 100MHz | 14mm | 1.4mm | CMOS | 1 | 200mA | e3 | Matte Tin (Sn) - annealed | QUAD | GULL WING | 260 | 3.3V | 30 | 100 | INDUSTRIAL | 0.65mm | SRAMs | 3-STATE | 5 ns | RAM, SRAM | 16b | 64KX32 | Synchronous | 32b | COMMON | |||||||||||||||||||||||||||||||||||||||||||||||
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MR4A16BCMA35R | Everspin Technologies Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Active | 5 (48 Hours) | 48 | EAR99 | 3.3V | 10mm | ROHS3 Compliant | 48 | 48-LFBGA | 16 Mb | Surface Mount | -40°C~85°C TA | MRAM (Magnetoresistive RAM) | ASYNCHRONOUS | 1.35mm | 8542.32.00.71 | 1 | 180mA | BOTTOM | NOT SPECIFIED | 3.3V | NOT SPECIFIED | 48 | 0.75mm | 3V | Not Qualified | 3.6V | 16Mb 1M x 16 | Non-Volatile | 3V~3.6V | 1MX16 | 16 | 16b | 0.014A | 35 ns | 16b | RAM | Parallel | 35ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT42L16M32D1HE-18 IT:E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 134-VFBGA | Surface Mount | -40°C~85°C TC | SDRAM - Mobile LPDDR2 | 512Mb 16M x 32 | Volatile | 1.14V~1.3V | 533MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT53B384M64D4TX-053 WT ES:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | -30°C~85°C TC | SDRAM - Mobile LPDDR4 | 24Gb 384M x 64 | Volatile | 1.1V | 1866MHz | DRAM | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AT49LV002N-12PC | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | 1997 | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 32-DIP (0.600, 15.24mm) | Through Hole | 0°C~70°C TC | FLASH | AT49LV002 | 32-PDIP | 120ns | 2Mb 256K x 8 | Non-Volatile | 3V~3.6V | FLASH | Parallel | 50μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
R1RW0416DSB-2LR#B0 | Renesas Electronics America | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 44-TSOP (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | 4Mb 256K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 12ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T3339S133BC8 | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | Tape & Reel | 2010 | no | Active | 3 (168 Hours) | 256 | 70°C | 0°C | 2.5V | 2 | 17mm | RoHS Compliant | Contains Lead | No | 256 | FLOW-THROUGH OR PIPELINED ARCHITECTURE | Parallel | 2.6V | 2.4V | 9 Mb | 133MHz | 17mm | 1.4mm | CMOS | 1.5mm | 1 | 370mA | e0 | Tin/Lead (Sn63Pb37) | BOTTOM | BALL | 225 | 2.5V | 20 | 256 | COMMERCIAL | 1mm | SRAMs | 3-STATE | 15 ns | RAM, SRAM | 19b | Synchronous | 0.015A | 18b | COMMON |
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SST26WF016BA-104I/SN Microchip Technology
Surface Mount SST26 SQI® Memory IC SST26 SQI® Series SST26WF016 16 Mb kb 4.9mm mm
Price: 0.0000
RFQ -
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24AA014-I/MS Microchip Technology
2/5V V Surface Mount 8 Pin Memory IC 24AA014 1 kb kb 3mm mm 3mA mA
Price: 0.0000
RFQ -
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24VL014/MS Microchip Technology
Surface Mount 8 Pin Memory IC 24VL014 1 kb kb 3mm mm 3mA mA
Price: 0.0000
RFQ -
MT48LC16M16A2B4-6A IT:G Micron Technology Inc.
3.3V V Memory IC MT48LC16M16A2 8mm mm
Price: 0.0000
RFQ -
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MR2A16AMA35 Everspin Technologies Inc.
Surface Mount 48 Pin Memory IC 4 Mb kb 8mm mm 155mA mA 16b b
Price: 8.3061
RFQ -
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71V632S5PFGI8 Integrated Device Technology (IDT)
Surface Mount 100 Pin Memory IC 2 Mb kb 20mm mm 200mA mA 32b b
Price: 0.0000
RFQ -
MR4A16BCMA35R Everspin Technologies Inc.
Surface Mount 48 Pin Memory IC 16 Mb kb 10mm mm 180mA mA 16b b
Price: 0.0000
RFQ -
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70T3339S133BC8 Integrated Device Technology (IDT)
Surface Mount 256 Pin Memory IC 9 Mb kb 17mm mm 370mA mA 18b b
Price: 0.0000
RFQ
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