Items : %s%s
Memory
Contact Plating
- Tin
ECCN Code
- 3A991.B.1.A
- EAR99
Factory Lead Time
- 11 Weeks
- 4 Weeks
- 5 Weeks
- 6 Weeks
- 7 Weeks
- 8 Weeks
JESD-609 Code
- e3
- e4
Manufacturer Package Identifier
- 24AA256-I/P
Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- 1 (Unlimited)
- 3 (168 Hours)
Mount
- Surface Mount
- Through Hole
Mounting Type
- Surface Mount
- Through Hole
Number of Pins
- 28
- 3
- 32
- 5
- 8
Number of Terminations
- 28
- 3
- 32
- 5
- 8
Operating Temperature
- -40°C~85°C TA
- 0°C~70°C TA
Package / Case
- 28-DIP (0.600, 15.24mm)
- 32-DIP (0.600, 15.24mm)
- 32-LCC (J-Lead)
- 32-TFSOP (0.488, 12.40mm Width)
- 8-DIP (0.300, 7.62mm)
- 8-SOIC (0.154, 3.90mm Width)
- 8-SOIC (0.209, 5.30mm Width)
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- SC-74A, SOT-753
- TO-226-3, TO-92-3 (TO-226AA)
Packaging
- Bulk
- Tape & Reel (TR)
- Tray
- Tube
Part Status
- Active
- Obsolete
Pbfree Code
- yes
Published
- 1995
- 1997
- 2000
- 2002
- 2003
- 2004
- 2005
- 2007
- 2008
- 2009
- 2013
Series
- MoBL®
- SST39 MPF™
Surface Mount
- NO
- YES
Terminal Finish
- Matte Tin (Sn)
- Matte Tin (Sn) - annealed
- Nickel/Palladium/Gold (Ni/Pd/Au)
Termination
- SMD/SMT
- Through Hole
Weight
- 453.59237mg
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Number of Ports | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Interface | Max Supply Voltage | Min Supply Voltage | Density | Frequency | Width | Thickness | Mounting Type | Operating Temperature | Technology | Operating Mode | Height Seated (Max) | HTS Code | Number of Functions | Nominal Supply Current | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Temperature Grade | Surface Mount | Terminal Pitch | JESD-30 Code | Supply Voltage-Min (Vsup) | Subcategory | Qualification Status | Power Supplies | Supply Voltage-Max (Vsup) | Voltage | Supplier Device Package | Output Characteristics | Access Time | Memory Size | Memory Type | Address Bus Width | Supply Current-Max | Voltage - Supply | Organization | Memory Width | Memory Density | Sync/Async | External Data Bus Width | Data Bus Width | Parallel/Serial | Clock Frequency | Standby Current-Max | Access Time (Max) | Word Size | Output Enable | Data Retention Time-Min | Endurance | Write Protection | Write Cycle Time-Max (tWC) | I/O Type | Programming Voltage | Serial Bus Type | Refresh Cycles | Host Data Transfer Rate-Max | Standby Voltage-Min | Memory Format | Memory Interface | Write Cycle Time - Word, Page | Sequential Burst Length | Interleaved Burst Length | Boot Block |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDT71256L25Y8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | Non-RoHS Compliant | 28-BSOJ (0.300, 7.62mm Width) | Surface Mount | 0°C~70°C TA | SRAM - Asynchronous | IDT71256 | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GD25Q64CWIGR | GigaDevice Semiconductor (HK) Limited | 2.4407 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | 2016 | Active | 3 (168 Hours) | ROHS3 Compliant | 8-WDFN Exposed Pad | Surface Mount | -40°C~85°C TA | FLASH - NOR | 64Mb 8M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
GD25Q16CSIGR | GigaDevice Semiconductor (HK) Limited | 0.2845 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IS25LQ512B-JDLE-TR | ISSI, Integrated Silicon Solution Inc | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Active | 3 (168 Hours) | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | Surface Mount | -40°C~105°C TA | FLASH - NOR | 8-TSSOP | 512Kb 64K x 8 | Non-Volatile | 2.3V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 800μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V416S12PH | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | 2007 | no | 3 (168 Hours) | 44 | 70°C | 0°C | 3.3V | 1 | RoHS Compliant | 44 | TSOP | Parallel | 3.6V | 3V | 4 Mb | CMOS | 1 | 180mA | e0 | DUAL | GULL WING | 225 | 3.3V | 20 | 44 | COMMERCIAL | 0.8mm | SRAMs | Not Qualified | 3-STATE | 12 ns | RAM, SRAM - Asynchronous | 18b | 16 | Asynchronous | 0.02A | 16b | YES | COMMON | 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png "MTFC4GACAEAM-1M WT") |
MTFC4GACAEAM-1M WT | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Bulk | 2015 | e•MMC™ | Obsolete | 3 (168 Hours) | 153 | 13mm | ROHS3 Compliant | IT ALSO OPERATES AT 2.7V TO 3.6 V | 11.5mm | -25°C~85°C TA | FLASH - NAND | 1mm | 8542.31.00.01 | e1 | TIN SILVER COPPER | BOTTOM | 260 | 30 | YES | 0.5mm | R-PBGA-B153 | 32Gb 4G x 8 | Non-Volatile | 2.7V~3.6V | 8 | 120 MBps | FLASH | MMC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25Q16CTIG | GigaDevice Semiconductor (HK) Limited | 0.2511 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tube | 2016 | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 16Mb 2M x 8 | Non-Volatile | 2.7V~3.6V | 120MHz | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71421LA20J | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 52-LCC (J-Lead) | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT71421 | 52-PLCC (19.13x19.13) | 20ns | 16Kb 2K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IDT71V35761S166BQG8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 165-TBGA | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR | IDT71V35761 | 3.5ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 166MHz | SRAM | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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71V416L10YGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tube | Obsolete | 3 (168 Hours) | 44-BSOJ (0.400, 10.16mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT71V416 | 4Mb 256K x 16 | Volatile | 3V~3.6V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71V65803S133BGI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | Non-RoHS Compliant | 119-BGA | Surface Mount | -40°C~85°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V65803 | 119-PBGA (14x22) | 4.2ns | 9Mb 512K x 18 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
GD25Q32CSIG | GigaDevice Semiconductor (HK) Limited | 0.2049 |
Min: 1 Mult: 1 |
0.00000000 | download | 6 Weeks | Tube | 2016 | Active | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.23mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | 3.3V | YES | 1.27mm | R-PDSO-G8 | 2.7V | 3.6V | 32Mb 4M x 8 | Non-Volatile | 0.025mA | 2.7V~3.6V | 32MX1 | 1 | 33554432 bit | SERIAL | 120MHz | 0.000005A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 2.7V | SPI | FLASH | SPI - Quad I/O | 50μs, 2.4ms | BOTTOM/TOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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GD25Q127CSIG | GigaDevice Semiconductor (HK) Limited | 0.5544 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tube | 2017 | Active | 3 (168 Hours) | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | Surface Mount | -40°C~85°C TA | FLASH - NOR | 128Mb 16M x 8 | Non-Volatile | 2.7V~3.6V | 104MHz | FLASH | SPI - Quad I/O | 12μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GD25Q80CSIG | GigaDevice Semiconductor (HK) Limited | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 4 Weeks | Tube | 2016 | Active | 3 (168 Hours) | 8 | 5.28mm | ROHS3 Compliant | 8-SOIC (0.209, 5.30mm Width) | 5.23mm | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | NOT SPECIFIED | 3.3V | NOT SPECIFIED | YES | 1.27mm | R-PDSO-G8 | 2.7V | 3.6V | 8Mb 1M x 8 | Non-Volatile | 2.7V~3.6V | 8MX1 | 1 | 8388608 bit | SERIAL | 120MHz | 3.3V | FLASH | SPI - Quad I/O | 50μs, 2.4ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29F8G08ABACAWP:C TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | 4 Weeks | Tape & Reel (TR) | 2015 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | 0°C~70°C TA | FLASH - NAND | MT29F8G08 | 8Gb 1G x 8 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MT49H32M9FM-25:B | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Surface Mount | Tray | 2015 | Discontinued | 3 (168 Hours) | 144 | 1.8V | 1 | 18.5mm | ROHS3 Compliant | No | 144 | AUTO REFRESH | 144-TFBGA | 288 Mb | Surface Mount | 0°C~95°C TC | CMOS | 1.2mm | 1 | 400MHz | BOTTOM | 1.8V | 1mm | 1.7V | 1.5/1.81.82.5V | 1.9V | 3-STATE | 20ns | 288Mb 32M x 9 | Volatile | 24b | 1.7V~1.9V | 32MX9 | 9 | 9b | COMMON | DRAM | Parallel | 248 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
M29W160ET70N3F TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2013 | Obsolete | 3 (168 Hours) | ROHS3 Compliant | 48-TFSOP (0.724, 18.40mm Width) | Surface Mount | -40°C~125°C TA | FLASH - NOR | M29W160 | 48-TSOP | 70ns | 16Mb 2M x 8 1M x 16 | Non-Volatile | 2.7V~3.6V | FLASH | Parallel | 70ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
BR25G128NUX-3TR | ROHM Semiconductor | 0.7161 |
Min: 1 Mult: 1 |
0.00000000 | 11 Weeks | Cut Tape (CT) | 2014 | Active | 1 (Unlimited) | 8 | 3mm | ROHS3 Compliant | 8-UFDFN Exposed Pad | SPI, Serial | 2mm | Surface Mount | -40°C~85°C TA | CMOS | SYNCHRONOUS | 0.6mm | 1 | DUAL | NOT SPECIFIED | 1.8V | NOT SPECIFIED | YES | 0.5mm | R-PDSO-N8 | 1.6V | 5.5V | 128Kb 16K x 8 | Non-Volatile | 1.6V~5.5V | 16KX8 | 8 | 131072 bit | 20MHz | 5ms | SPI | EEPROM | SPI | 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
71421LA25PFI | Integrated Device Technology (IDT) | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 7 Weeks | Surface Mount | 2008 | no | Active | 3 (168 Hours) | 64 | EAR99 | 85°C | -40°C | 5V | 2 | 14mm | RoHS Compliant | Contains Lead | No | 64 | TQFP | Parallel | 5.5V | 4.5V | 16 kb | 14mm | 1.4mm | CMOS | 1.6mm | 1 | 220mA | e0 | Tin/Lead (Sn85Pb15) | QUAD | GULL WING | 240 | 5V | 20 | 64 | INDUSTRIAL | 0.8mm | SRAMs | 5V | 3-STATE | 25 ns | 2kB | RAM, SDR, SRAM | 11b | Asynchronous | 0.004A | 8b | COMMON | 2V | |||||||||||||||||||||||||||||||||||||||||||||
 |
N25Q064A13ESED0E | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 25 Weeks | Bulk | 2012 | Obsolete | 3 (168 Hours) | 8 | ROHS3 Compliant | 8 | 8-SOIC (0.209, 5.30mm Width) | 64 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | SYNCHRONOUS | 2.16mm | 1 | DUAL | NOT SPECIFIED | 3V | NOT SPECIFIED | YES | 1.27mm | Not Qualified | 3/3.3V | 2.7V | 64Mb 16M x 4 | Non-Volatile | 0.02mA | 2.7V~3.6V | 64MX1 | 1 | SERIAL | 108MHz | 0.0001A | 20 | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | SPI | FLASH | SPI | 8ms, 5ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JS28F512P33TFA | Micron Technology Inc. | 15.0403 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2010 | Axcell™ | yes | Obsolete | 3 (168 Hours) | 56 | 18.4mm | ROHS3 Compliant | Tin | No | 56 | 56-TFSOP (0.724, 18.40mm Width) | Parallel, Serial | 512 Mb | Surface Mount | -40°C~85°C TA | FLASH - NOR | 1.2mm | 1 | 31mA | e3 | DUAL | 260 | 3V | 30 | 28F512P33 | 56 | YES | 0.5mm | 2.3V | 512Mb 32M x 16 | Non-Volatile | 25b | 2.3V~3.6V | 32MX16 | 16 | Asynchronous | 40MHz | 105 ns | 16b | FLASH | Parallel | 105ns | |||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT29E768G08EEHBBJ4-3:B TR | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | Tape & Reel (TR) | Not For New Designs | 3 (168 Hours) | ROHS3 Compliant | 132-VBGA | Surface Mount | 0°C~70°C TA | FLASH - NAND | 768Gb 96G x 8 | Non-Volatile | 2.5V~3.6V | 333MHz | FLASH | Parallel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
MT47H64M8CF-187E:G | Micron Technology Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | 2010 | yes | Discontinued | 3 (168 Hours) | 60 | EAR99 | 1.8V | 1 | 10mm | ROHS3 Compliant | Lead Free | No | 60 | AUTO/SELF REFRESH | 60-TFBGA | 512 Mb | Surface Mount | 0°C~85°C TC | SDRAM - DDR2 | 1.2mm | 8542.32.00.28 | 1 | 1.066GHz | e1 | TIN SILVER COPPER | BOTTOM | 260 | 1.8V | 30 | MT47H64M8 | 60 | YES | 0.8mm | 1.7V | 1.9V | 3-STATE | 350ps | 512Mb 64M x 8 | Volatile | 16b | 1.7V~1.9V | 64MX8 | 8 | 8b | 533MHz | 0.007A | COMMON | 8192 | DRAM | Parallel | 15ns | 48 | 48 | |||||||||||||||||||||||||||||||||||||||||
 |
IDT71256SA20PZI8 | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 28-TSSOP (0.465, 11.80mm Width) | Surface Mount | -40°C~85°C TA | SRAM - Asynchronous | IDT71256 | 256Kb 32K x 8 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
AS4C256M8D3-12BANTR | Alliance Memory, Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tape & Reel (TR) | 2014 | Automotive, AEC-Q100 | Discontinued | 3 (168 Hours) | 105°C | -40°C | 1.5V | ROHS3 Compliant | 78 | 78-TFBGA | Parallel | 2 Gb | 800MHz | Surface Mount | -40°C~105°C TC | SDRAM - DDR3 | 800MHz | 78-FBGA (8x10.5) | 20ns | 2Gb 256M x 8 | Volatile | 15b | 1.425V~1.575V | 800MHz | DRAM | Parallel | 15ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
70T653MS10BCG | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 3 (168 Hours) | ROHS3 Compliant | 256-LBGA | Surface Mount | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT70T653M | 256-CABGA (17x17) | 10ns | 18Mb 512K x 36 | Volatile | 2.4V~2.6V | SRAM | Parallel | 10ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
93LC46BT-I/MNY | Microchip Technology | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 5 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Gold | 8 | 8-WFDFN Exposed Pad | Serial | 1 kb | Surface Mount | -40°C~85°C TA | CMOS | 2mA | e4 | DUAL | 260 | 40 | 93LC46B | 0.5mm | Not Qualified | 2/5V | 250 ns | 1Kb 64 x 16 | Non-Volatile | 2.5V~5.5V | 64X16 | 16 | 2MHz | 0.000001A | 200 | 1000000 Write/Erase Cycles | SOFTWARE | MICROWIRE | EEPROM | SPI | 6ms | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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7143LA55G | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | 13 Weeks | Tray | Active | 1 (Unlimited) | Non-RoHS Compliant | 68-BPGA | Through Hole | 0°C~70°C TA | SRAM - Dual Port, Asynchronous | IDT7143 | 32Kb 2K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 55ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 |
IDT71V546S133PF | Renesas Electronics America Inc. | 11.4434 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | 0°C~70°C TA | SRAM - Synchronous, SDR (ZBT) | IDT71V546 | 4.2ns | 4.5Mb 128K x 36 | Volatile | 3.135V~3.465V | 133MHz | SRAM | Parallel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
7028L20PFI | Renesas Electronics America Inc. | 0.0000 |
Min: 1 Mult: 1 |
0.00000000 | download | Tray | Obsolete | 3 (168 Hours) | Non-RoHS Compliant | 100-LQFP | Surface Mount | -40°C~85°C TA | SRAM - Dual Port, Asynchronous | IDT7028 | 1Mb 64K x 16 | Volatile | 4.5V~5.5V | SRAM | Parallel | 20ns |
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IDT71V416S12PH Integrated Device Technology (IDT)
Surface Mount 44 Pin Memory IC 4 Mb kb 180mA mA 16b b
Price: 0.0000
RFQ -
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MT49H32M9FM-25:B Micron Technology Inc.
1.5/1.81.82.5V V Surface Mount Memory IC 288 Mb kb 18.5mm mm
Price: 0.0000
RFQ -
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71421LA25PFI Integrated Device Technology (IDT)
5V V Surface Mount 64 Pin Memory IC 16 kb kb 14mm mm 220mA mA 8b b
Price: 0.0000
RFQ -
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JS28F512P33TFA Micron Technology Inc.
Axcell™ 56 Pin Memory IC Axcell™ Series 28F512P33 512 Mb kb 18.4mm mm 31mA mA 16b b
Price: 15.0403
RFQ -
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MT47H64M8CF-187E:G Micron Technology Inc.
60 Pin Memory IC MT47H64M8 512 Mb kb 10mm mm
Price: 0.0000
RFQ -
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AS4C256M8D3-12BANTR Alliance Memory, Inc.
Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series 2 Gb kb
Price: 0.0000
RFQ -
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93LC46BT-I/MNY Microchip Technology
2/5V V Surface Mount Memory IC 93LC46B 1 kb kb 2mA mA
Price: 0.0000
RFQ -
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