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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Factory Lead Time Pbfree Code ECCN Code RoHS Status Additional Feature Reach Compliance Code Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Number of Elements Configuration Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Collector Current-Max (IC) DC Current Gain-Min (hFE) Number of Terminals Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Transistor Element Material Drain Current-Max (Abs) (ID) Highest Frequency Band Power Gain-Min (Gp) Collector-Emitter Voltage-Max Collector-Base Capacitance-Max
NE3512S02-T1D-A NE3512S02-T1D-A RENESAS ELECTRONICS CORP 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 [object Object] yes EAR99 RoHS Compliant LOW NOISE compliant DEPLETION MODE e6 Tin/Bismuth (Sn/Bi) QUAD FLAT NOT SPECIFIED NOT SPECIFIED 4 YES R-PQMW-F4 125°C Other Transistors Not Qualified 1 SINGLE N-CHANNEL 0.165W 4 AMPLIFIER 3V HETERO-JUNCTION SILICON 0.015A KU B 12.5dB
UPA2350T1G-E4-A UPA2350T1G-E4-A RENESAS ELECTRONICS CORP 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 yes EAR99 RoHS Compliant compliant ENHANCEMENT MODE e6 TIN BISMUTH BOTTOM BALL NOT SPECIFIED NOT SPECIFIED 4 YES S-XBGA-B4 150°C FET General Purpose Power Not Qualified 2 COMPLEX N-CHANNEL 1.3W 4 SWITCHING METAL-OXIDE SEMICONDUCTOR SILICON
UPA2451CTL-E1-A UPA2451CTL-E1-A RENESAS ELECTRONICS CORP 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 yes EAR99 RoHS Compliant ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED 6 YES R-PDSO-F6 150°C FET General Purpose Power Not Qualified 2 COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE DRAIN N-CHANNEL 2.5W 6 SWITCHING 0.032Ohm 30V METAL-OXIDE SEMICONDUCTOR SILICON 8.2A
NESG3031M14-T3-A NESG3031M14-T3-A RENESAS ELECTRONICS CORP 0.0000
RFQ

Min: 1

Mult: 1

0.00000000 [object Object] yes EAR99 RoHS Compliant LOW NOISE compliant 8541.21.00.95 e6 TIN BISMUTH DUAL FLAT NOT SPECIFIED NOT SPECIFIED 4 YES R-PDSO-F4 150°C BIP RF Small Signal Not Qualified 1 SINGLE NPN 0.15W 0.035A 220 4 AMPLIFIER SILICON GERMANIUM C B 4.3V 0.25pF
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