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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case Reach Compliance Code Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases Non-rep Pk Forward Current-Max Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Collector Current-Max (IC) DC Current Gain-Min (hFE) Repetitive Peak Off-state Voltage Leakage Current (Max) Element Configuration Power Dissipation Turn On Delay Time Max Breakdown Voltage Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Max Repetitive Reverse Voltage (Vrrm) Voltage - DC Reverse (Vr) (Max) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Vce(on) (Max) @ Vge, Ic IGBT Type Gate-Emitter Voltage-Max Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Test Condition Gate Charge Td (on/off) @ 25°C Switching Energy Voltage - Off State Current - On State (It (RMS)) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) Triac Type Critical Rate of Rise of Commutation Voltage-Min
2SK4093TZ-E 2SK4093TZ-E Renesas Electronics America 1.2884
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0.00000000 download 16 Weeks Through Hole Tape & Reel (TR) 2008 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-226-3, TO-92-3 Long Body Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 14 ns 900mW Ta 1A SWITCHING 2.7Ohm 250V 46 ns SILICON N-Channel 2.6 Ω @ 500mA, 4V 140pF @ 25V 5.5nC @ 4V 17ns 16 ns 10V 1A 1A Ta 250V 2.5V 4V ±10V
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0.00000000 download 16 Weeks Surface Mount Tape & Reel (TR) 2005 yes Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant Lead Free 30A No 5 SC-100, SOT-669 Surface Mount 150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING 260 20 5 R-PSSO-G4 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 15W 15 ns 15W Tc 30A SWITCHING 48 ns SILICON N-Channel 8.2m Ω @ 15A, 10V 1650pF @ 10V 26nC @ 10V 55ns 11 ns 20V 30A Ta 4.5V 10V ±20V
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