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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case Reach Compliance Code Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Input Type HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Max Power Dissipation Power - Max Diode Element Material Number of Elements Configuration Diode Type Output Current-Max Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Max Breakdown Voltage Speed Current - Reverse Leakage @ Vr Voltage - Forward (Vf) (Max) @ If Operating Temperature - Junction Max Reverse Voltage (DC) Average Rectified Current Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Reverse Current-Max Reverse Recovery Time Power Dissipation-Max Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Turn On Time Vce(on) (Max) @ Vge, Ic Turn Off Time-Nom (toff) IGBT Type Gate-Emitter Voltage-Max Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Gate-Emitter Thr Voltage-Max Test Condition Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max)
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0.00000000 download 16 Weeks Surface Mount Tube 2013 Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant SC-83 Surface Mount 8541.10.00.80 SINGLE GULL WING 4 R-PSSO-G2 150°C Rectifier Diodes SILICON 1 SINGLE Standard ULTRA FAST RECOVERY 1 120A CATHODE Fast Recovery =< 500ns, > 200mA (Io) 1μA @ 600V 3V @ 30A -55°C~150°C 600V 30A 600V 1μA 25 ns
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0.00000000 download 16 Weeks Through Hole Tube 2005 yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free No 3 TO-3P-3, SC-65-3 Through Hole 150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e2 Tin/Copper (Sn/Cu) SINGLE 4 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 120W 35 ns 120W Tc 20A SWITCHING 0.27Ohm 500V 240 ns SILICON N-Channel 270m Ω @ 10A, 10V 3050pF @ 10V 130ns 105 ns 30V 20A Ta 500V 80A 10V ±30V
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0.00000000 Obsolete Not Applicable RoHS Compliant TO-247-3 compliant Through Hole 150°C TJ Standard NO Insulated Gate BIP Transistors 208.3W N-CHANNEL 208.3W 100ns 1.95V @ 15V, 30A Trench 30V 600V 60A 8V 300V, 30A, 10 Ω, 15V 87nC 180A 54ns/136ns
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