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Discrete Semiconductors

discrete semiconductor.jpg
Discrete Semiconductor refer to electronic components that are individual and separate from each other, as opposed to integrated circuits that contain multiple components on a single chip. These discrete components include diodes, transistors, thyristors, and other similar devices that perform specific functions in electronic circuits. They are commonly used in power supplies, amplifiers, and other electronic devices where precise control and regulation of electrical signals is required. Discrete Semiconductor Products are available in a variety of sizes, shapes, and specifications to meet the needs of different applications. They are widely used in the electronics industry and are essential components in many electronic devices.
Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Package / Case Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Max Power Dissipation Power - Max Number of Elements Configuration Case Connection Polarity/Channel Type Power Dissipation-Max (Abs) Repetitive Peak Off-state Voltage Leakage Current (Max) Power Dissipation Turn On Delay Time Drain to Source Resistance Max Repetitive Reverse Voltage (Vrrm) Power Dissipation-Max RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) FET Feature Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type RMS On-state Current-Max Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max) Triac Type Critical Rate of Rise of Commutation Voltage-Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic Resistor - Base (R1) Resistor - Emitter Base (R2)
N0300N-T1B-AT N0300N-T1B-AT Renesas Electronics America 0.0607
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0.00000000 download Tape & Reel (TR) 2009 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant SC-96 Surface Mount 150°C MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.21.00.95 e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PDSO-G3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE 1.25W Ta SWITCHING 0.083Ohm 30V SILICON N-Channel 50m Ω @ 2A, 10V 350pF @ 10V 4.5A 4.5A Ta 30V 4.5V 10V ±20V
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